JPWO2022196394A1 - - Google Patents
Info
- Publication number
- JPWO2022196394A1 JPWO2022196394A1 JP2023506970A JP2023506970A JPWO2022196394A1 JP WO2022196394 A1 JPWO2022196394 A1 JP WO2022196394A1 JP 2023506970 A JP2023506970 A JP 2023506970A JP 2023506970 A JP2023506970 A JP 2023506970A JP WO2022196394 A1 JPWO2022196394 A1 JP WO2022196394A1
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06226—Modulation at ultra-high frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
- H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021045486 | 2021-03-19 | ||
| JP2021045486 | 2021-03-19 | ||
| PCT/JP2022/009415 WO2022196394A1 (ja) | 2021-03-19 | 2022-03-04 | フォトニック結晶面発光レーザおよびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022196394A1 true JPWO2022196394A1 (https=) | 2022-09-22 |
| JPWO2022196394A5 JPWO2022196394A5 (https=) | 2023-12-14 |
| JP7811935B2 JP7811935B2 (ja) | 2026-02-06 |
Family
ID=83320370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023506970A Active JP7811935B2 (ja) | 2021-03-19 | 2022-03-04 | フォトニック結晶面発光レーザおよびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240170917A1 (https=) |
| EP (1) | EP4311043A4 (https=) |
| JP (1) | JP7811935B2 (https=) |
| CN (1) | CN116918200A (https=) |
| WO (1) | WO2022196394A1 (https=) |
Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0548210A (ja) * | 1991-08-09 | 1993-02-26 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JPH0918081A (ja) * | 1995-06-29 | 1997-01-17 | Mitsubishi Electric Corp | 半導体レーザ |
| JP2003264346A (ja) * | 2002-03-08 | 2003-09-19 | Sanyo Electric Co Ltd | 窒化物系半導体レーザ素子 |
| JP2005203644A (ja) * | 2004-01-19 | 2005-07-28 | Yokogawa Electric Corp | 面発光レーザ |
| JP2006128548A (ja) * | 2004-11-01 | 2006-05-18 | Seiko Epson Corp | 面発光型半導体レーザおよびその製造方法、光モジュール、並びに、光伝達装置 |
| JP2007234835A (ja) * | 2006-02-28 | 2007-09-13 | Canon Inc | 垂直共振器型面発光レーザ |
| JP2008500711A (ja) * | 2004-05-28 | 2008-01-10 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 垂直の放出方向を有する面放出型の半導体レーザ素子 |
| JP2008047638A (ja) * | 2006-08-11 | 2008-02-28 | Sumitomo Electric Ind Ltd | 面発光レーザ素子およびその製造方法、ならびに面発光レーザアレイおよびその製造方法 |
| JP2008085033A (ja) * | 2006-09-27 | 2008-04-10 | Canon Inc | 発光素子およびそれを用いた表示素子 |
| WO2008117562A1 (ja) * | 2007-03-23 | 2008-10-02 | Sumitomo Electric Industries, Ltd. | フォトニック結晶レーザおよびフォトニック結晶レーザの製造方法 |
| JP2010283335A (ja) * | 2009-05-07 | 2010-12-16 | Canon Inc | フォトニック結晶面発光レーザ |
| JP2011124301A (ja) * | 2009-12-09 | 2011-06-23 | Canon Inc | 二次元フォトニック結晶面発光レーザ |
| CN102623890A (zh) * | 2012-03-27 | 2012-08-01 | 北京工业大学 | 多孔缺陷匹配型光子晶体面发射激光器 |
| US20150288146A1 (en) * | 2011-04-29 | 2015-10-08 | The Regents Of The University Of California | Vertical cavity surface emitting lasers with silicon-on-insulator high contrast grating |
| JP2018198302A (ja) * | 2016-07-25 | 2018-12-13 | 浜松ホトニクス株式会社 | 半導体発光素子およびその製造方法 |
| JP2019016750A (ja) * | 2017-07-10 | 2019-01-31 | 浜松ホトニクス株式会社 | 半導体レーザ素子 |
| WO2019111787A1 (ja) * | 2017-12-08 | 2019-06-13 | 浜松ホトニクス株式会社 | 発光装置およびその製造方法 |
| US10340659B1 (en) * | 2018-06-14 | 2019-07-02 | Conary Enterprise Co., Ltd. | Electronically pumped surface-emitting photonic crystal laser |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4793820B2 (ja) | 2006-03-20 | 2011-10-12 | 国立大学法人京都大学 | ２次元フォトニック結晶面発光レーザ光源 |
-
2022
- 2022-03-04 US US18/281,791 patent/US20240170917A1/en active Pending
- 2022-03-04 CN CN202280018249.8A patent/CN116918200A/zh active Pending
- 2022-03-04 WO PCT/JP2022/009415 patent/WO2022196394A1/ja not_active Ceased
- 2022-03-04 EP EP22771148.8A patent/EP4311043A4/en active Pending
- 2022-03-04 JP JP2023506970A patent/JP7811935B2/ja active Active
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0548210A (ja) * | 1991-08-09 | 1993-02-26 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JPH0918081A (ja) * | 1995-06-29 | 1997-01-17 | Mitsubishi Electric Corp | 半導体レーザ |
| JP2003264346A (ja) * | 2002-03-08 | 2003-09-19 | Sanyo Electric Co Ltd | 窒化物系半導体レーザ素子 |
| JP2005203644A (ja) * | 2004-01-19 | 2005-07-28 | Yokogawa Electric Corp | 面発光レーザ |
| JP2008500711A (ja) * | 2004-05-28 | 2008-01-10 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 垂直の放出方向を有する面放出型の半導体レーザ素子 |
| JP2006128548A (ja) * | 2004-11-01 | 2006-05-18 | Seiko Epson Corp | 面発光型半導体レーザおよびその製造方法、光モジュール、並びに、光伝達装置 |
| JP2007234835A (ja) * | 2006-02-28 | 2007-09-13 | Canon Inc | 垂直共振器型面発光レーザ |
| JP2008047638A (ja) * | 2006-08-11 | 2008-02-28 | Sumitomo Electric Ind Ltd | 面発光レーザ素子およびその製造方法、ならびに面発光レーザアレイおよびその製造方法 |
| JP2008085033A (ja) * | 2006-09-27 | 2008-04-10 | Canon Inc | 発光素子およびそれを用いた表示素子 |
| WO2008117562A1 (ja) * | 2007-03-23 | 2008-10-02 | Sumitomo Electric Industries, Ltd. | フォトニック結晶レーザおよびフォトニック結晶レーザの製造方法 |
| JP2010283335A (ja) * | 2009-05-07 | 2010-12-16 | Canon Inc | フォトニック結晶面発光レーザ |
| JP2011124301A (ja) * | 2009-12-09 | 2011-06-23 | Canon Inc | 二次元フォトニック結晶面発光レーザ |
| US20150288146A1 (en) * | 2011-04-29 | 2015-10-08 | The Regents Of The University Of California | Vertical cavity surface emitting lasers with silicon-on-insulator high contrast grating |
| CN102623890A (zh) * | 2012-03-27 | 2012-08-01 | 北京工业大学 | 多孔缺陷匹配型光子晶体面发射激光器 |
| JP2018198302A (ja) * | 2016-07-25 | 2018-12-13 | 浜松ホトニクス株式会社 | 半導体発光素子およびその製造方法 |
| JP2019016750A (ja) * | 2017-07-10 | 2019-01-31 | 浜松ホトニクス株式会社 | 半導体レーザ素子 |
| WO2019111787A1 (ja) * | 2017-12-08 | 2019-06-13 | 浜松ホトニクス株式会社 | 発光装置およびその製造方法 |
| US10340659B1 (en) * | 2018-06-14 | 2019-07-02 | Conary Enterprise Co., Ltd. | Electronically pumped surface-emitting photonic crystal laser |
Non-Patent Citations (1)
| Title |
|---|
| CARL REUTERSKIOLD HEDLUND, ET AL.: ""Buried-Tunnel Junction Current Injection for InP-Based Nanomembrane Photonic Crystal Surface Emitt", PHYSICA STATUS SOLIDI (A), vol. 217, no. 3, JPN6025040697, 12 September 2019 (2019-09-12), pages 1900527, ISSN: 0005774965 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022196394A1 (ja) | 2022-09-22 |
| EP4311043A1 (en) | 2024-01-24 |
| CN116918200A (zh) | 2023-10-20 |
| JP7811935B2 (ja) | 2026-02-06 |
| US20240170917A1 (en) | 2024-05-23 |
| EP4311043A4 (en) | 2024-08-28 |
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