CN116830262A - 宽带隙半导体装置 - Google Patents

宽带隙半导体装置 Download PDF

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Publication number
CN116830262A
CN116830262A CN202280013916.3A CN202280013916A CN116830262A CN 116830262 A CN116830262 A CN 116830262A CN 202280013916 A CN202280013916 A CN 202280013916A CN 116830262 A CN116830262 A CN 116830262A
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CN
China
Prior art keywords
main surface
electrode
semiconductor device
resin
wide bandgap
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Pending
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CN202280013916.3A
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English (en)
Chinese (zh)
Inventor
中野佑纪
久津间保德
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Rohm Co Ltd
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Rohm Co Ltd
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Publication of CN116830262A publication Critical patent/CN116830262A/zh
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CN202280013916.3A 2021-03-18 2022-02-03 宽带隙半导体装置 Pending CN116830262A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-045115 2021-03-18
JP2021045115 2021-03-18
PCT/JP2022/004301 WO2022196158A1 (ja) 2021-03-18 2022-02-03 ワイドバンドギャップ半導体装置

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