CN116018669B - 等离子处理装置用保护皮膜的清洗方法 - Google Patents

等离子处理装置用保护皮膜的清洗方法

Info

Publication number
CN116018669B
CN116018669B CN202180017270.1A CN202180017270A CN116018669B CN 116018669 B CN116018669 B CN 116018669B CN 202180017270 A CN202180017270 A CN 202180017270A CN 116018669 B CN116018669 B CN 116018669B
Authority
CN
China
Prior art keywords
cleaning
plasma
processing apparatus
film
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180017270.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN116018669A (zh
Inventor
上田和浩
池永和幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Publication of CN116018669A publication Critical patent/CN116018669A/zh
Application granted granted Critical
Publication of CN116018669B publication Critical patent/CN116018669B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN202180017270.1A 2021-08-23 2021-08-23 等离子处理装置用保护皮膜的清洗方法 Active CN116018669B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/030850 WO2023026331A1 (ja) 2021-08-23 2021-08-23 プラズマ処理装置用保護皮膜の洗浄方法

Publications (2)

Publication Number Publication Date
CN116018669A CN116018669A (zh) 2023-04-25
CN116018669B true CN116018669B (zh) 2025-09-19

Family

ID=85321630

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180017270.1A Active CN116018669B (zh) 2021-08-23 2021-08-23 等离子处理装置用保护皮膜的清洗方法

Country Status (6)

Country Link
US (1) US12437978B2 (https=)
JP (1) JP7358655B2 (https=)
KR (1) KR102709625B1 (https=)
CN (1) CN116018669B (https=)
TW (1) TWI849469B (https=)
WO (1) WO2023026331A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102914217B1 (ko) 2024-07-11 2026-01-20 (주)위지트 플라즈마 보호 피막 세정 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106399896A (zh) * 2015-07-31 2017-02-15 信越化学工业株式会社 钇基喷涂涂层和制造方法
CN110391123A (zh) * 2018-04-20 2019-10-29 株式会社日立高新技术 等离子处理装置以及等离子处理装置用构件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4813115B2 (ja) 2005-07-14 2011-11-09 国立大学法人東北大学 半導体製造装置用部材及びその洗浄方法
JP2009176787A (ja) 2008-01-22 2009-08-06 Hitachi High-Technologies Corp エッチング処理装置及びエッチング処理室用部材
JP4591722B2 (ja) * 2008-01-24 2010-12-01 信越化学工業株式会社 セラミックス溶射部材の製造方法
JP5530794B2 (ja) * 2010-04-28 2014-06-25 株式会社日立ハイテクノロジーズ 真空処理装置及びプラズマ処理方法
JP2012222225A (ja) * 2011-04-12 2012-11-12 Hitachi High-Technologies Corp プラズマ処理装置
JP5750496B2 (ja) * 2013-12-11 2015-07-22 株式会社日立ハイテクノロジーズ プラズマ処理方法
US9999907B2 (en) * 2016-04-01 2018-06-19 Applied Materials, Inc. Cleaning process that precipitates yttrium oxy-flouride
TWI721216B (zh) 2016-10-13 2021-03-11 美商應用材料股份有限公司 用於電漿處理裝置中的腔室部件、包含其之裝置及製造其之方法
US11276579B2 (en) * 2018-11-14 2022-03-15 Hitachi High-Tech Corporation Substrate processing method and plasma processing apparatus
WO2021049208A1 (ja) 2019-09-09 2021-03-18 富士フイルム株式会社 処理液、キット、処理液の製造方法、基板の洗浄方法、基板の処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106399896A (zh) * 2015-07-31 2017-02-15 信越化学工业株式会社 钇基喷涂涂层和制造方法
CN110391123A (zh) * 2018-04-20 2019-10-29 株式会社日立高新技术 等离子处理装置以及等离子处理装置用构件

Also Published As

Publication number Publication date
US20240203708A1 (en) 2024-06-20
CN116018669A (zh) 2023-04-25
US12437978B2 (en) 2025-10-07
WO2023026331A1 (ja) 2023-03-02
JPWO2023026331A1 (https=) 2023-03-02
JP7358655B2 (ja) 2023-10-10
KR20230031187A (ko) 2023-03-07
TWI849469B (zh) 2024-07-21
KR102709625B1 (ko) 2024-09-26
TW202309976A (zh) 2023-03-01

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