JP7358655B2 - プラズマ処理装置用保護皮膜の洗浄方法 - Google Patents

プラズマ処理装置用保護皮膜の洗浄方法 Download PDF

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Publication number
JP7358655B2
JP7358655B2 JP2022551293A JP2022551293A JP7358655B2 JP 7358655 B2 JP7358655 B2 JP 7358655B2 JP 2022551293 A JP2022551293 A JP 2022551293A JP 2022551293 A JP2022551293 A JP 2022551293A JP 7358655 B2 JP7358655 B2 JP 7358655B2
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Prior art keywords
cleaning
plasma
plasma processing
protective film
processing apparatus
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English (en)
Japanese (ja)
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JPWO2023026331A5 (https=
JPWO2023026331A1 (https=
Inventor
和浩 上田
和幸 池永
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2022551293A 2021-08-23 2021-08-23 プラズマ処理装置用保護皮膜の洗浄方法 Active JP7358655B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/030850 WO2023026331A1 (ja) 2021-08-23 2021-08-23 プラズマ処理装置用保護皮膜の洗浄方法

Publications (3)

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JPWO2023026331A1 JPWO2023026331A1 (https=) 2023-03-02
JPWO2023026331A5 JPWO2023026331A5 (https=) 2023-08-02
JP7358655B2 true JP7358655B2 (ja) 2023-10-10

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JP2022551293A Active JP7358655B2 (ja) 2021-08-23 2021-08-23 プラズマ処理装置用保護皮膜の洗浄方法

Country Status (6)

Country Link
US (1) US12437978B2 (https=)
JP (1) JP7358655B2 (https=)
KR (1) KR102709625B1 (https=)
CN (1) CN116018669B (https=)
TW (1) TWI849469B (https=)
WO (1) WO2023026331A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102914217B1 (ko) 2024-07-11 2026-01-20 (주)위지트 플라즈마 보호 피막 세정 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007007782A1 (ja) 2005-07-14 2007-01-18 Tohoku University 多層構造体及びその洗浄方法
JP2009174000A (ja) 2008-01-24 2009-08-06 Shin Etsu Chem Co Ltd セラミックス溶射部材及びその製造方法ならびにセラミックス溶射部材用研磨メディア
JP2019519091A (ja) 2016-04-01 2019-07-04 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ オキシフッ化物を沈殿させるクリーニングプロセス

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009176787A (ja) 2008-01-22 2009-08-06 Hitachi High-Technologies Corp エッチング処理装置及びエッチング処理室用部材
JP5530794B2 (ja) * 2010-04-28 2014-06-25 株式会社日立ハイテクノロジーズ 真空処理装置及びプラズマ処理方法
JP2012222225A (ja) * 2011-04-12 2012-11-12 Hitachi High-Technologies Corp プラズマ処理装置
JP5750496B2 (ja) * 2013-12-11 2015-07-22 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6500681B2 (ja) * 2015-07-31 2019-04-17 信越化学工業株式会社 イットリウム系溶射皮膜、及びその製造方法
TWI721216B (zh) 2016-10-13 2021-03-11 美商應用材料股份有限公司 用於電漿處理裝置中的腔室部件、包含其之裝置及製造其之方法
JP7122854B2 (ja) * 2018-04-20 2022-08-22 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置用部材、またはプラズマ処理装置の製造方法およびプラズマ処理装置用部材の製造方法
US11276579B2 (en) * 2018-11-14 2022-03-15 Hitachi High-Tech Corporation Substrate processing method and plasma processing apparatus
WO2021049208A1 (ja) 2019-09-09 2021-03-18 富士フイルム株式会社 処理液、キット、処理液の製造方法、基板の洗浄方法、基板の処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007007782A1 (ja) 2005-07-14 2007-01-18 Tohoku University 多層構造体及びその洗浄方法
JP2009174000A (ja) 2008-01-24 2009-08-06 Shin Etsu Chem Co Ltd セラミックス溶射部材及びその製造方法ならびにセラミックス溶射部材用研磨メディア
JP2019519091A (ja) 2016-04-01 2019-07-04 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ オキシフッ化物を沈殿させるクリーニングプロセス

Also Published As

Publication number Publication date
US20240203708A1 (en) 2024-06-20
CN116018669A (zh) 2023-04-25
US12437978B2 (en) 2025-10-07
WO2023026331A1 (ja) 2023-03-02
JPWO2023026331A1 (https=) 2023-03-02
KR20230031187A (ko) 2023-03-07
TWI849469B (zh) 2024-07-21
KR102709625B1 (ko) 2024-09-26
CN116018669B (zh) 2025-09-19
TW202309976A (zh) 2023-03-01

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