CN115989584B - 宽带隙半导体装置 - Google Patents
宽带隙半导体装置Info
- Publication number
- CN115989584B CN115989584B CN202180052727.2A CN202180052727A CN115989584B CN 115989584 B CN115989584 B CN 115989584B CN 202180052727 A CN202180052727 A CN 202180052727A CN 115989584 B CN115989584 B CN 115989584B
- Authority
- CN
- China
- Prior art keywords
- metal electrode
- wide
- element content
- specified element
- content region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
- H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors
- H10D64/0123—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors to silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6738—Schottky barrier electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-143284 | 2020-08-27 | ||
| JP2020143284 | 2020-08-27 | ||
| PCT/JP2021/031066 WO2022045160A1 (ja) | 2020-08-27 | 2021-08-25 | ワイドギャップ半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115989584A CN115989584A (zh) | 2023-04-18 |
| CN115989584B true CN115989584B (zh) | 2026-03-06 |
Family
ID=80355261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180052727.2A Active CN115989584B (zh) | 2020-08-27 | 2021-08-25 | 宽带隙半导体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12363927B2 (https=) |
| EP (1) | EP4207308A4 (https=) |
| JP (1) | JP7369302B2 (https=) |
| CN (1) | CN115989584B (https=) |
| TW (1) | TWI777752B (https=) |
| WO (1) | WO2022045160A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117157769A (zh) * | 2021-04-05 | 2023-12-01 | 罗姆股份有限公司 | 半导体装置及半导体装置的制造方法 |
| EP4718988A1 (en) * | 2024-09-25 | 2026-04-01 | Hitachi Energy Ltd | Method for producing a first contact layer and a second contact layer on a power semiconductor body, and power semiconductor device |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3557011B2 (ja) * | 1995-03-30 | 2004-08-25 | 株式会社東芝 | 半導体発光素子、及びその製造方法 |
| JP3361062B2 (ja) | 1998-09-17 | 2003-01-07 | 株式会社東芝 | 半導体装置 |
| US8183594B2 (en) * | 2007-03-15 | 2012-05-22 | National University Corporation Toyohashi University Of Technology | Laminar structure on a semiconductor substrate |
| JP4645641B2 (ja) * | 2007-12-03 | 2011-03-09 | 富士電機システムズ株式会社 | ＳｉＣショットキーダイオードの製造方法 |
| JP5453867B2 (ja) | 2009-03-24 | 2014-03-26 | 株式会社デンソー | ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 |
| JP5598015B2 (ja) | 2010-02-23 | 2014-10-01 | 株式会社デンソー | ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 |
| TW201137975A (en) * | 2010-04-19 | 2011-11-01 | Sumitomo Electric Industries | Silicon carbide semiconductor device and its manufacturing method |
| US9887139B2 (en) * | 2011-12-28 | 2018-02-06 | Infineon Technologies Austria Ag | Integrated heterojunction semiconductor device and method for producing an integrated heterojunction semiconductor device |
| JP2014053393A (ja) | 2012-09-06 | 2014-03-20 | Sumitomo Electric Ind Ltd | ワイドギャップ半導体装置およびその製造方法 |
| JP6244763B2 (ja) | 2013-09-12 | 2017-12-13 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| JP6242724B2 (ja) | 2014-03-20 | 2017-12-06 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JP6584966B2 (ja) * | 2016-01-12 | 2019-10-02 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び昇降機 |
| DE112017007060T5 (de) * | 2017-02-14 | 2019-10-24 | Mitsubishi Electric Corporation | Leistungshalbleitereinheit |
| JP6977465B2 (ja) * | 2017-10-06 | 2021-12-08 | 株式会社デンソー | 半導体装置の製造方法 |
| JP2020092321A (ja) * | 2018-12-05 | 2020-06-11 | 太陽誘電株式会社 | 弾性波デバイスおよびその製造方法、フィルタ並びにマルチプレクサ |
-
2021
- 2021-08-25 JP JP2022545650A patent/JP7369302B2/ja active Active
- 2021-08-25 EP EP21861584.7A patent/EP4207308A4/en active Pending
- 2021-08-25 CN CN202180052727.2A patent/CN115989584B/zh active Active
- 2021-08-25 WO PCT/JP2021/031066 patent/WO2022045160A1/ja not_active Ceased
- 2021-08-25 US US18/008,657 patent/US12363927B2/en active Active
- 2021-08-27 TW TW110131789A patent/TWI777752B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP4207308A1 (en) | 2023-07-05 |
| TW202213713A (zh) | 2022-04-01 |
| TWI777752B (zh) | 2022-09-11 |
| JPWO2022045160A1 (https=) | 2022-03-03 |
| EP4207308A4 (en) | 2024-09-04 |
| US20230246111A1 (en) | 2023-08-03 |
| WO2022045160A1 (ja) | 2022-03-03 |
| JP7369302B2 (ja) | 2023-10-25 |
| US12363927B2 (en) | 2025-07-15 |
| CN115989584A (zh) | 2023-04-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |