JP2016501442A - デュアルメタルの、一部が凹んだ電極を有する、GaN系ショットキーダイオード - Google Patents
デュアルメタルの、一部が凹んだ電極を有する、GaN系ショットキーダイオード Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title description 53
- 239000002184 metal Substances 0.000 title description 53
- 230000009977 dual effect Effects 0.000 title description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 238000005036 potential barrier Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 20
- 150000004767 nitrides Chemical class 0.000 claims description 19
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 31
- 229910002601 GaN Inorganic materials 0.000 description 30
- 230000004888 barrier function Effects 0.000 description 21
- 150000002739 metals Chemical class 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- -1 nitride compound Chemical class 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 208000032750 Device leakage Diseases 0.000 description 1
- 241001562081 Ikeda Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
Description
Claims (20)
- 半導体デバイスであって:
基板と;
前記基板上に配置された第1活性層と;
前記第1活性層上に配置された第2活性層であって、前記第2活性層は、前記第1活性層よりも高いバンドギャップを有し、これによって前記第1活性層と前記第2活性層との間に二次元電子ガス層が生じる、第2活性層と;
その間にショットキー接合が形成されるように、前記第2活性層内の凹みに配置される第1部分、及び前記第2活性層上に配置された第2部分を有する第1電極であって、前記第1電極の前記第1部分は、前記第1電極の前記第2部分よりも低いショットキー電位障壁を有する、第1電極と;
前記第1活性層と接触する第2電極であって、前記第2電極は前記第1活性層とオーミック接合を形成する、第2電極とを含む、半導体デバイス。 - 前記第1電極の前記第1部分は、前記二次元電子ガスと接触している、請求項1に記載の半導体デバイス。
- 前記第1電極の前記第2部分は、前記第2活性層の前記凹み内の異なる深さにそれぞれ位置する、複数の区分を含む、請求項1に記載の半導体デバイス。
- 前記複数の区分は、階段状で異なる深さに位置する、請求項3に記載の半導体デバイス。
- 前記第1電極の前記第1部分が、前記第1活性層と前記第2活性層との間の境界面と垂直でない角度を成す、前記第2活性層と隣接する縁部を有する、請求項1に記載の半導体デバイス。
- 前記第1電極の前記第1部分が、前記第1電極の前記第2部分の表面積よりも小さい、前記基板が延びる平面と平行な表面積を有し、前記第1電極の前記第2部分の前記表面積は、前記基板が延びる平面と平行である、請求項1に記載の半導体デバイス。
- 前記第1活性層は、第III族窒化物半導体材料を含む、請求項1に記載の半導体デバイス。
- 前記第1活性層は、GaNを含む、請求項7に記載の半導体デバイス。
- 前記第2活性層は、第III族窒化物半導体材料を含む、請求項1に記載の半導体デバイス。
- 前記第2活性層はAlXGa1−XNを含み、0<X<1である、請求項9に記載の半導体デバイス。
- 前記第2活性層は、AlGaN、AlInN、及びAlInGaNからなる群から選択される、請求項9に記載の半導体デバイス。
- 半導体デバイスを形成する方法であって:
基板上に第1活性層を形成する工程と;
前記第1活性層上に第2活性層を形成する工程であって、前記第2活性層は、前記第1活性層よりも高いバンドギャップを有し、これによって前記第1活性層と前記第2活性層との間に二次元電子ガス層が生じる、工程と;
その間にショットキー接合が形成されるように、前記第2活性層の上に第1電極を形成する工程であって、前記第1電極は、前記第2活性層上に配置された第1部分、及び前記二次元電子ガスと接触する第2部分を有し、前記第1電極の前記第1部分は、前記第1電極の前記第2部分よりも高いショットキー電位障壁を有する、工程と;
前記第1活性層上に第2電極を形成し、その間にオーミック接合を形成する工程とを含む、方法。 - 前記第1電極の前記第2部分は、前記第2活性層の前記凹み内の異なる深さにそれぞれ位置する、複数の区分を含む、請求項12に記載の方法。
- 前記複数の区分は、階段状で異なる深さに位置する、請求項13に記載の方法。
- 前記第1電極の前記第1部分が、前記第1活性層と前記第2活性層との間の境界面と垂直でない角度を成す、前記第2活性層と隣接する縁部を有する、請求項12に記載の方法。
- 前記第1電極の前記第2部分が、前記第1電極の前記第1部分の表面積よりも小さい、前記基板が延びる平面と平行な表面積を有し、前記第1電極の前記第1部分の前記表面積は、前記基板が延びる平面と平行である、請求項12に記載の方法。
- 前記第1活性層は、第III族窒化物半導体材料を含む、請求項12に記載の方法。
- 前記第1活性層は、GaNを含む、請求項17に記載の方法。
- 前記第2活性層は、第III族窒化物半導体材料を含む、請求項12に記載の方法。
- 前記第2活性層は、AlXGa1−XNを含み、0<X<1である、請求項19に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/678,572 US8981381B2 (en) | 2012-11-16 | 2012-11-16 | GaN-based Schottky diode having dual metal, partially recessed electrode |
US13/678,572 | 2012-11-16 | ||
PCT/US2012/071005 WO2014077860A1 (en) | 2012-11-16 | 2012-12-20 | GaN-BASED SCHOTTKY DIODE HAVING DUAL METAL, PARTIALLY RECESSED ELECTRODE |
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JP2016501442A true JP2016501442A (ja) | 2016-01-18 |
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JP2015543022A Pending JP2016501442A (ja) | 2012-11-16 | 2012-12-20 | デュアルメタルの、一部が凹んだ電極を有する、GaN系ショットキーダイオード |
Country Status (7)
Country | Link |
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US (1) | US8981381B2 (ja) |
EP (1) | EP2920818A4 (ja) |
JP (1) | JP2016501442A (ja) |
KR (1) | KR102011761B1 (ja) |
CN (2) | CN113241382A (ja) |
TW (1) | TWI508308B (ja) |
WO (1) | WO2014077860A1 (ja) |
Cited By (1)
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JP2022548607A (ja) * | 2019-09-26 | 2022-11-21 | ▲東▼南大学 | 窒化ガリウムパワーデバイス及びその製造方法 |
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KR102100928B1 (ko) * | 2013-10-17 | 2020-05-15 | 삼성전자주식회사 | 고전자 이동도 트랜지스터 |
US9123828B2 (en) * | 2013-11-14 | 2015-09-01 | Infineon Technologies Ag | Semiconductor device and method for forming a semiconductor device |
CN104332504A (zh) * | 2014-07-08 | 2015-02-04 | 中山大学 | 一种GaN基异质结肖特基二极管器件及其制作方法 |
CN104882491B (zh) * | 2015-02-12 | 2018-05-15 | 苏州捷芯威半导体有限公司 | 一种肖特基二极管及其制作方法 |
CN106024914A (zh) * | 2016-06-30 | 2016-10-12 | 广东省半导体产业技术研究院 | 混合阳极电极结构的GaN基肖特基二极管及其制备方法 |
CN108666360B (zh) * | 2017-03-29 | 2021-08-03 | 北京大学 | 一种提高GaN L-FER反向击穿电压的器件结构及实现方法 |
GB2569196B (en) * | 2017-12-11 | 2022-04-20 | Pragmatic Printing Ltd | Schottky diode |
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US20140138698A1 (en) | 2014-05-22 |
KR102011761B1 (ko) | 2019-08-19 |
EP2920818A1 (en) | 2015-09-23 |
TW201421706A (zh) | 2014-06-01 |
WO2014077860A1 (en) | 2014-05-22 |
CN113241382A (zh) | 2021-08-10 |
TWI508308B (zh) | 2015-11-11 |
KR20150084855A (ko) | 2015-07-22 |
EP2920818A4 (en) | 2016-07-06 |
CN104798207A (zh) | 2015-07-22 |
US8981381B2 (en) | 2015-03-17 |
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