JP2022548607A - 窒化ガリウムパワーデバイス及びその製造方法 - Google Patents
窒化ガリウムパワーデバイス及びその製造方法 Download PDFInfo
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- JP2022548607A JP2022548607A JP2022516340A JP2022516340A JP2022548607A JP 2022548607 A JP2022548607 A JP 2022548607A JP 2022516340 A JP2022516340 A JP 2022516340A JP 2022516340 A JP2022516340 A JP 2022516340A JP 2022548607 A JP2022548607 A JP 2022548607A
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- gallium nitride
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- cathode
- power device
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 179
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 175
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 13
- 230000001939 inductive effect Effects 0.000 claims description 12
- 239000002041 carbon nanotube Substances 0.000 claims description 9
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 9
- 229910021389 graphene Inorganic materials 0.000 claims description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 5
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 238000005121 nitriding Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 79
- 238000000034 method Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
Description
本発明を容易に理解してもらうために、以下、関連図面を参照して本発明をより全面的に説明する。図面は本発明の好ましい実施形態を提示している。しかし、本発明は、他の多くの態様によって実現されることができ、本文に記載の実施形態に限定されるものではない。一方、これらの実施形態を提示する目的は、本発明の開示内容をより明確かつ完全にすることである。
Claims (15)
- 第1導電型を有する窒化ガリウム基板と、
前記窒化ガリウム基板の上に設けられ、第1カソード及び前記第1カソードから間隔を隔てて設置された第2カソードを含むカソードと、
第1導電型を有し、前記窒化ガリウム基板の上、かつ前記第1カソードと前記第2カソードとの間に設けられ、隣り合う窒化ガリウム突起構造の間に凹溝が形成される、複数の窒化ガリウム突起構造と、
各前記窒化ガリウム突起構造の頂部及び側面を覆う電子移動層と、
第1導電型を有し、前記電子移動層の上に設けられて各前記凹溝を充填する窒化ガリウム層と、
各第2導電型領域が前記窒化ガリウム層の頂部から下へ一つの前記凹溝に入り、各前記窒化ガリウム突起構造の頂部がいずれも各前記第2導電型領域の底部より高い、複数の第2導電型領域と、
前記窒化ガリウム層及び各前記第2導電型領域の上に設けられたアノードと、を含み、
前記電子移動層は設置された位置に導電チャンネル領域を形成するためのものであり、前記導電チャンネル領域の電子移動度は前記窒化ガリウム層の電子移動度より高く、
前記第1導電型は前記第2導電型と反対の導電型であることを特徴とする窒化ガリウムパワーデバイス。 - 前記電子移動層は、各前記窒化ガリウム突起構造の頂部及び側面を覆うヘテロ接合誘発層を含み、前記ヘテロ接合誘発層と下方の窒化ガリウム材料との接触界面にヘテロ接合が形成されることにより、前記接触界面の窒化ガリウム材料に近づく側に二次元電子ガス層が形成されることを特徴とする請求項1に記載の窒化ガリウムパワーデバイス。
- 前記ヘテロ接合誘発層は窒化アルミニウムガリウム層を含むことを特徴とする請求項2に記載の窒化ガリウムパワーデバイス。
- 前記電子移動層はカーボンナノチューブ層を含むことを特徴とする請求項1に記載の窒化ガリウムパワーデバイス。
- 前記電子移動層はグラフェン層を含むことを特徴とする請求項1に記載の窒化ガリウムパワーデバイス。
- 前記窒化ガリウムパワーデバイスは、ジャンクションバリアショットキーダイオードであることを特徴とする請求項1に記載の窒化ガリウムパワーデバイス。
- 前記電子移動層はさらに前記凹溝の底部を覆い、且つ前記窒化ガリウム基板の前記第1カソードと前記第2カソードの間に位置する表面を覆うことを特徴とする請求項1に記載の窒化ガリウムパワーデバイス。
- 各前記凹溝には、前記凹溝に入る前記第2導電型領域が一つまたは二つ以上設置されることを特徴とする請求項1に記載の窒化ガリウムパワーデバイス。
- 前記第1導電型はN型であり、前記第2導電型はP型であることを特徴とする請求項1から7のいずれか一項に記載の窒化ガリウムパワーデバイス。
- 複数の前記第2導電型領域は、複数のP型ドーピング窒化ガリウム領域であることを特徴とする請求項9に記載の窒化ガリウムパワーデバイス。
- 第1導電型の窒化ガリウム基板を取得するステップと、
前記窒化ガリウム基板の表面にエッチングを行って複数の凹溝を形成し、凹溝の間に残された窒化ガリウム基板が窒化ガリウム突起構造を形成するステップと、
前記窒化ガリウム突起構造の頂部及び側面を覆うように電子移動層を形成するステップと、
前記電子移動層の上に窒化ガリウム層を形成して前記窒化ガリウム層によって各前記凹溝を埋めるステップと、
前記窒化ガリウム層の頂部から下へ一つの前記凹溝に入る第2導電型領域を複数形成するステップと、
アノード及びカソードを形成するステップと、を含み、
前記窒化ガリウム層が第1導電型を有し、前記電子移動層が設置された位置に導電チャンネル領域を形成するためのものであり、前記導電チャンネル領域の電子移動度が前記窒化ガリウム層の電子移動度より高く、
前記アノードは、前記窒化ガリウム層及び複数の前記第2導電型領域の上に形成され、前記カソードは、前記窒化ガリウム基板の表面に形成され、第1カソード及び第2カソードを含み、前記窒化ガリウム層及び各前記窒化ガリウム突起構造は前記第1カソードと前記第2カソードの間に位置することを特徴とする窒化ガリウムパワーデバイスの製造方法。 - 前記電子移動層を形成するステップは、窒化アルミニウムガリウム層をエピタキシャルによって形成することを含むことを特徴とする請求項11に記載の窒化ガリウムパワーデバイスの製造方法。
- 前記窒化ガリウム層を形成するステップは、エピタキシャルによって行われ、前記窒化ガリウム層の頂部から下へ一つの前記凹溝に入る第2導電型領域を複数形成するステップは、エピタキシャルによって第2導電型窒化ガリウム領域を形成することを含むことを特徴とする請求項11に記載の窒化ガリウムパワーデバイスの製造方法。
- 前記窒化ガリウム突起構造の頂部及び側面を覆うように前記電子移動層を形成するステップにおいて、形成された前記電子移動層はグラフェン層であることを特徴とする、請求項11に記載の窒化ガリウムパワーデバイスの製造方法。
- 前記窒化ガリウム突起構造の頂部及び側面を覆うように前記電子移動層を形成するステップにおいて、形成された前記電子移動層はカーボンナノチューブであることを特徴とする、請求項11に記載の窒化ガリウムパワーデバイスの製造方法。
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