TWI777752B - 寬帶隙半導體裝置 - Google Patents

寬帶隙半導體裝置 Download PDF

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Publication number
TWI777752B
TWI777752B TW110131789A TW110131789A TWI777752B TW I777752 B TWI777752 B TW I777752B TW 110131789 A TW110131789 A TW 110131789A TW 110131789 A TW110131789 A TW 110131789A TW I777752 B TWI777752 B TW I777752B
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TW
Taiwan
Prior art keywords
band gap
gap semiconductor
metal electrode
wide band
element content
Prior art date
Application number
TW110131789A
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English (en)
Chinese (zh)
Other versions
TW202213713A (zh
Inventor
前山雄介
中村俊一
大貫仁
Original Assignee
日商新電元工業股份有限公司
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Application filed by 日商新電元工業股份有限公司 filed Critical 日商新電元工業股份有限公司
Publication of TW202213713A publication Critical patent/TW202213713A/zh
Application granted granted Critical
Publication of TWI777752B publication Critical patent/TWI777752B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors
    • H10D64/0123—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

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  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
TW110131789A 2020-08-27 2021-08-27 寬帶隙半導體裝置 TWI777752B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-143284 2020-08-27
JP2020143284 2020-08-27

Publications (2)

Publication Number Publication Date
TW202213713A TW202213713A (zh) 2022-04-01
TWI777752B true TWI777752B (zh) 2022-09-11

Family

ID=80355261

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110131789A TWI777752B (zh) 2020-08-27 2021-08-27 寬帶隙半導體裝置

Country Status (6)

Country Link
US (1) US12363927B2 (https=)
EP (1) EP4207308A4 (https=)
JP (1) JP7369302B2 (https=)
CN (1) CN115989584B (https=)
TW (1) TWI777752B (https=)
WO (1) WO2022045160A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117157769A (zh) * 2021-04-05 2023-12-01 罗姆股份有限公司 半导体装置及半导体装置的制造方法
EP4718988A1 (en) * 2024-09-25 2026-04-01 Hitachi Energy Ltd Method for producing a first contact layer and a second contact layer on a power semiconductor body, and power semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100244049A1 (en) * 2009-03-24 2010-09-30 Denso Corporation Silicon carbide semiconductor device with schottky barrier diode and method of manufacturing the same
CN102163627A (zh) * 2010-02-23 2011-08-24 株式会社电装 具有肖特基势垒二极管的碳化硅半导体装置及其制造方法
TW201137975A (en) * 2010-04-19 2011-11-01 Sumitomo Electric Industries Silicon carbide semiconductor device and its manufacturing method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3557011B2 (ja) * 1995-03-30 2004-08-25 株式会社東芝 半導体発光素子、及びその製造方法
JP3361062B2 (ja) 1998-09-17 2003-01-07 株式会社東芝 半導体装置
US8183594B2 (en) * 2007-03-15 2012-05-22 National University Corporation Toyohashi University Of Technology Laminar structure on a semiconductor substrate
JP4645641B2 (ja) * 2007-12-03 2011-03-09 富士電機システムズ株式会社 ＳｉＣショットキーダイオードの製造方法
US9887139B2 (en) * 2011-12-28 2018-02-06 Infineon Technologies Austria Ag Integrated heterojunction semiconductor device and method for producing an integrated heterojunction semiconductor device
JP2014053393A (ja) 2012-09-06 2014-03-20 Sumitomo Electric Ind Ltd ワイドギャップ半導体装置およびその製造方法
JP6244763B2 (ja) 2013-09-12 2017-12-13 住友電気工業株式会社 炭化珪素半導体装置
JP6242724B2 (ja) 2014-03-20 2017-12-06 株式会社東芝 半導体装置およびその製造方法
JP6584966B2 (ja) * 2016-01-12 2019-10-02 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び昇降機
DE112017007060T5 (de) * 2017-02-14 2019-10-24 Mitsubishi Electric Corporation Leistungshalbleitereinheit
JP6977465B2 (ja) * 2017-10-06 2021-12-08 株式会社デンソー 半導体装置の製造方法
JP2020092321A (ja) * 2018-12-05 2020-06-11 太陽誘電株式会社 弾性波デバイスおよびその製造方法、フィルタ並びにマルチプレクサ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100244049A1 (en) * 2009-03-24 2010-09-30 Denso Corporation Silicon carbide semiconductor device with schottky barrier diode and method of manufacturing the same
CN102163627A (zh) * 2010-02-23 2011-08-24 株式会社电装 具有肖特基势垒二极管的碳化硅半导体装置及其制造方法
TW201137975A (en) * 2010-04-19 2011-11-01 Sumitomo Electric Industries Silicon carbide semiconductor device and its manufacturing method

Also Published As

Publication number Publication date
CN115989584B (zh) 2026-03-06
EP4207308A1 (en) 2023-07-05
TW202213713A (zh) 2022-04-01
JPWO2022045160A1 (https=) 2022-03-03
EP4207308A4 (en) 2024-09-04
US20230246111A1 (en) 2023-08-03
WO2022045160A1 (ja) 2022-03-03
JP7369302B2 (ja) 2023-10-25
US12363927B2 (en) 2025-07-15
CN115989584A (zh) 2023-04-18

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