JP2017228571A - 半導体装置、電源回路、及び、コンピュータ - Google Patents
半導体装置、電源回路、及び、コンピュータ Download PDFInfo
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- JP2017228571A JP2017228571A JP2016121786A JP2016121786A JP2017228571A JP 2017228571 A JP2017228571 A JP 2017228571A JP 2016121786 A JP2016121786 A JP 2016121786A JP 2016121786 A JP2016121786 A JP 2016121786A JP 2017228571 A JP2017228571 A JP 2017228571A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 146
- 150000004767 nitrides Chemical class 0.000 claims abstract description 60
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 28
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 26
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 23
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 23
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 23
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 22
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 22
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 22
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 21
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 21
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 21
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 21
- 229910052805 deuterium Inorganic materials 0.000 claims abstract description 19
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 19
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 19
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 19
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 12
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 12
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 12
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 24
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- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 20
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 20
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- 239000011574 phosphorus Substances 0.000 claims description 20
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 20
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- 239000001257 hydrogen Substances 0.000 claims description 18
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 18
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 18
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- 229910052693 Europium Inorganic materials 0.000 claims description 11
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- 229910052689 Holmium Inorganic materials 0.000 claims description 11
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- 229910052772 Samarium Inorganic materials 0.000 claims description 11
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- 229910052771 Terbium Inorganic materials 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 10
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical group [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 9
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 8
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- 239000010410 layer Substances 0.000 description 114
- 230000001681 protective effect Effects 0.000 description 35
- 230000004888 barrier function Effects 0.000 description 33
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 18
- 229910000449 hafnium oxide Inorganic materials 0.000 description 11
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 11
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
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- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- MIQVEZFSDIJTMW-UHFFFAOYSA-N aluminum hafnium(4+) oxygen(2-) Chemical compound [O-2].[Al+3].[Hf+4] MIQVEZFSDIJTMW-UHFFFAOYSA-N 0.000 description 2
- HVXCTUSYKCFNMG-UHFFFAOYSA-N aluminum oxygen(2-) zirconium(4+) Chemical compound [O-2].[Zr+4].[Al+3] HVXCTUSYKCFNMG-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000003682 fluorination reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002345 surface coating layer Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- -1 for example Chemical compound 0.000 description 1
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- 150000002926 oxygen Chemical class 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
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- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- Junction Field-Effect Transistors (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
本実施形態の半導体装置は、第1の窒化物半導体層と、第1の窒化物半導体層の上に位置し、第1の窒化物半導体層よりもバンドギャップの大きい第2の窒化物半導体層と、第2の窒化物半導体層の上の第1の電極と、第2の窒化物半導体層の上の第2の電極と、第1の電極と第2の電極との間に位置するゲート電極と、第2の窒化物半導体層の上の少なくともゲート電極と第2の電極との間に位置する第1の絶縁層と、を備える。
本実施形態の半導体装置は、第2の窒化物半導体層とゲート電極との間に第3の窒化物半導体層を有する点以外は、第1の実施形態と同様である。以下、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、第2の窒化物半導体層とゲート電極との間にゲート絶縁層を、更に備える点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、第1の窒化物半導体層とゲート電極との間に位置し、第1の窒化物半導体層及びゲート電極に接するゲート絶縁層を、更に、備える点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、溝(リセス)の深さが浅い点で、第4の実施形態と異なっている。以下、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の電源回路及びコンピュータは、HEMTを有する。
16 バリア層(第2の窒化物半導体層)
18 ソース電極(第1の電極)
20 ドレイン電極(第2の電極)
22 界面膜(第2の絶縁層)
24 保護膜(第1の絶縁層)
26 ゲート絶縁層
28 ゲート電極
42 電源回路
100 HEMT(半導体装置)
200 HEMT(半導体装置)
300 HEMT(半導体装置)
400 HEMT(半導体装置)
500 HEMT(半導体装置)
600 サーバ(コンピュータ)
Claims (16)
- 第1の窒化物半導体層と、
前記第1の窒化物半導体層の上に位置し、前記第1の窒化物半導体層よりもバンドギャップの大きい第2の窒化物半導体層と、
前記第2の窒化物半導体層の上の第1の電極と、
前記第2の窒化物半導体層の上の第2の電極と、
前記第1の電極と前記第2の電極との間に位置するゲート電極と、
前記第2の窒化物半導体層の上の少なくとも前記ゲート電極と前記第2の電極との間に位置し、Hf(ハフニウム)、Zr(ジルコニウム)、及び、Ti(チタン)から成る群の少なくとも一つの第1の元素の酸化物であって、F(フッ素)、H(水素)、D(重水素)、V(バナジウム)、Nb(ニオブ)、及び、Ta(タンタル)から成る群の少なくとも一つの第2の元素を5×1019cm−3以上含有し、N(窒素)、P(リン)、As(ヒ素)、Sb(アンチモン)、Bi(ビスマス)、Be(ベリリウム)、Mg(マグネシウム)、Ca(カルシウム)、Sr(ストロンチウム)、Ba(バリウム)、Sc(スカンジウム)、Y(イットリウム)、及び、ランタノイド(La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)から成る群の少なくとも一つの第3の元素を5×1019cm−3以上含有する第1の絶縁層と、
を備える半導体装置。 - 前記第1の絶縁層が前記第2の電極に接する請求項1記載の半導体装置。
- 前記第2の窒化物半導体層と前記第1の絶縁層との間に第2の絶縁層を、更に備える請求項1又は請求項2記載の半導体装置。
- 前記第2の窒化物半導体層と前記ゲート電極との間にゲート絶縁層を、更に備える請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記ゲート絶縁層が、Hf(ハフニウム)、Zr(ジルコニウム)、及び、Ti(チタン)から成る群の少なくとも一つの第1の元素の酸化物であって、F(フッ素)、H(水素)、D(重水素)、V(バナジウム)、Nb(ニオブ)、及び、Ta(タンタル)から成る群の少なくとも一つの第2の元素を5×1019cm−3以上含有し、N(窒素)、P(リン)、As(ヒ素)、Sb(アンチモン)、Bi(ビスマス)、Be(ベリリウム)、Mg(マグネシウム)、Ca(カルシウム)、Sr(ストロンチウム)、Ba(バリウム)、Sc(スカンジウム)、Y(イットリウム)、及び、ランタノイド(La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)から成る群の少なくとも一つの第3の元素を5×1019cm−3以上含有する請求項4記載の半導体装置。
- 前記第1の窒化物半導体層と前記ゲート電極との間に位置し、前記第1の窒化物半導体層及び前記ゲート電極に接するゲート絶縁層を、更に備える請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記第1の窒化物半導体層は窒化ガリウムであり、前記第2の窒化物半導体層は窒化アルミニウムガリウムである請求項1乃至請求項6いずれか一項記載の半導体装置。
- 第1の窒化物半導体層と、
前記第1の窒化物半導体層の上に位置し、前記第1の窒化物半導体層よりもバンドギャップの大きい第2の窒化物半導体層と、
前記第2の窒化物半導体層の上の第1の電極と、
前記第2の窒化物半導体層の上の第2の電極と、
前記第1の電極と前記第2の電極との間に位置するゲート電極と、
前記第2の窒化物半導体層の上の少なくとも前記ゲート電極と前記第2の電極との間に位置し、Al(アルミニウム)、La(ランタン)、Y(イットリウム)、及び、Sc(スカンジウム)から成る群の少なくとも一つの第1の元素の酸化物であって、F(フッ素)、H(水素)、D(重水素)、V(バナジウム)、Nb(ニオブ)、及び、Ta(タンタル)から成る群の少なくとも一つの第2の元素を5×1019cm−3以上含有し、N(窒素)、P(リン)、As(ヒ素)、Sb(アンチモン)、Bi(ビスマス)、Be(ベリリウム)、Mg(マグネシウム)、Ca(カルシウム)、Sr(ストロンチウム)、及び、Ba(バリウム)から成る群の少なくとも一つの第3の元素を5×1019cm−3以上含有する第1の絶縁層と、
を備える半導体装置。 - 前記第1の絶縁層が前記第2の電極に接する請求項8記載の半導体装置。
- 前記第2の窒化物半導体層と前記第1の絶縁層との間に第2の絶縁層を、更に備える請求項8又は請求項9記載の半導体装置。
- 前記第2の窒化物半導体層と前記ゲート電極との間にゲート絶縁層を、更に備える請求項8乃至請求項10いずれか一項記載の半導体装置。
- 前記ゲート絶縁層が、Al(アルミニウム)、La(ランタン)、Y(イットリウム)、及び、Sc(スカンジウム)から成る群の少なくとも一つの第1の元素の酸化物であって、F(フッ素)、H(水素)、D(重水素)、V(バナジウム)、Nb(ニオブ)、及び、Ta(タンタル)から成る群の少なくとも一つの第2の元素を5×1019cm−3以上含有し、N(窒素)、P(リン)、As(ヒ素)、Sb(アンチモン)、Bi(ビスマス)、Be(ベリリウム)、Mg(マグネシウム)、Ca(カルシウム)、Sr(ストロンチウム)、及び、Ba(バリウム)から成る群の少なくとも一つの第3の元素を5×1019cm−3以上含有する請求項11記載の半導体装置。
- 前記第1の窒化物半導体層と前記ゲート電極との間に位置し、前記第1の窒化物半導体層及び前記ゲート電極に接するゲート絶縁層を、更に備える請求項8乃至請求項10いずれか一項記載の半導体装置。
- 前記第1の窒化物半導体層は窒化ガリウムであり、前記第2の窒化物半導体層は窒化アルミニウムガリウムである請求項8乃至請求項13いずれか一項記載の半導体装置。
- 請求項1乃至請求項14いずれか一項記載の半導体装置を備える電源回路。
- 請求項1乃至請求項14いずれか一項記載の半導体装置を備えるコンピュータ。
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