CN115735428A - 氧化物薄膜晶体管及其制备方法、显示装置 - Google Patents

氧化物薄膜晶体管及其制备方法、显示装置 Download PDF

Info

Publication number
CN115735428A
CN115735428A CN202180001623.9A CN202180001623A CN115735428A CN 115735428 A CN115735428 A CN 115735428A CN 202180001623 A CN202180001623 A CN 202180001623A CN 115735428 A CN115735428 A CN 115735428A
Authority
CN
China
Prior art keywords
insulating layer
oxide semiconductor
layer
oxide
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180001623.9A
Other languages
English (en)
Inventor
王利忠
袁广才
宁策
姚念琦
胡合合
雷利平
王东方
薛大鹏
董水浪
李正亮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Publication of CN115735428A publication Critical patent/CN115735428A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本公开至少一实施例提供一种氧化物薄膜晶体管、显示装置和氧化物薄膜晶体管的制备方法，该氧化物薄膜晶体管(100)包括：衬底基板(101)；设置在衬底基板(101)上的氧化物半导体层(105)；设置在氧化物半导体层(105)的远离衬底基板(101)一侧的绝缘层(108)，其中，该绝缘层(108)的材料为氧化物，绝缘层(108)包括层叠设置的第一绝缘层(108b)和第二绝缘层(108a)，第二绝缘层(108a)的致密度大于第一绝缘层(108b)的致密度，且第二绝缘层(108a)相对于第一绝缘层更远离衬底基板(101)，本公开的实施例至少将第一绝缘层和第二绝缘层的致密度和厚度进行了调整，将氧化物半导体层中的氧固定在氧化物半导体层中，以减少后续高温退火工艺中氧化物半导体层中氧元素的流失，从而保证了氧化物薄膜晶体管特性的稳定。

Description

PCT国内申请，说明书已公开。

Claims (27)

  1. PCT国内申请，权利要求书已公开。
CN202180001623.9A 2021-06-25 2021-06-25 氧化物薄膜晶体管及其制备方法、显示装置 Pending CN115735428A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/102511 WO2022267043A1 (zh) 2021-06-25 2021-06-25 氧化物薄膜晶体管及其制备方法、显示装置

Publications (1)

Publication Number Publication Date
CN115735428A true CN115735428A (zh) 2023-03-03

Family

ID=84545154

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180001623.9A Pending CN115735428A (zh) 2021-06-25 2021-06-25 氧化物薄膜晶体管及其制备方法、显示装置

Country Status (5)

Country Link
US (1) US20240097042A1 (zh)
EP (1) EP4207303A4 (zh)
JP (1) JP2024528497A (zh)
CN (1) CN115735428A (zh)
WO (1) WO2022267043A1 (zh)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100485943C (zh) * 1999-06-02 2009-05-06 株式会社半导体能源研究所 半导体器件
TWI453915B (zh) * 2007-09-10 2014-09-21 Idemitsu Kosan Co Thin film transistor
JP2011222767A (ja) * 2010-04-09 2011-11-04 Sony Corp 薄膜トランジスタならびに表示装置および電子機器
CN102664194B (zh) * 2012-04-10 2015-01-07 深超光电（深圳）有限公司 薄膜晶体管
CN103000694B (zh) * 2012-12-13 2015-08-19 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示装置
KR102089314B1 (ko) * 2013-05-14 2020-04-14 엘지디스플레이 주식회사 산화물 박막 트랜지스터 및 그 제조방법
WO2015059850A1 (ja) * 2013-10-24 2015-04-30 株式会社Ｊｏｌｅｄ 薄膜トランジスタの製造方法
US10714633B2 (en) * 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP6808689B2 (ja) * 2018-07-23 2021-01-06 株式会社Ｊｏｌｅｄ 薄膜トランジスタ基板および発光装置
JPWO2020089726A1 (ja) * 2018-11-02 2021-11-18 株式会社半導体エネルギー研究所 半導体装置
KR102704437B1 (ko) * 2019-06-13 2024-09-09 삼성디스플레이 주식회사 박막트랜지스터 기판 및 이를 구비한 디스플레이 장치
CN112103246A (zh) * 2020-09-23 2020-12-18 福建华佳彩有限公司 一种tft阵列基板结构及制作方法
CN112038289B (zh) * 2020-11-04 2021-02-02 成都中电熊猫显示科技有限公司 一种阵列基板、显示面板以及阵列基板的制作方法

Also Published As

Publication number Publication date
JP2024528497A (ja) 2024-07-30
US20240097042A1 (en) 2024-03-21
EP4207303A4 (en) 2024-01-10
WO2022267043A1 (zh) 2022-12-29
EP4207303A1 (en) 2023-07-05

Similar Documents

Publication Publication Date Title
US8778722B2 (en) TFT substrate and method for producing TFT substrate
US20090001374A1 (en) Tft Substrate, Reflective Tft Substrate and Method for Manufacturing These Substrates
KR101542840B1 (ko) 박막 트랜지스터 표시판 및 이의 제조 방법
US20100163876A1 (en) Reflective tft substrate and method for manufacturing reflective tft substrate
JP5624628B2 (ja) 半導体装置
TWI478355B (zh) 薄膜電晶體
KR20140037808A (ko) 어레이 기판을 제조하는 방법, 어레이 기판 및 표시 장치
WO2018113214A1 (zh) 薄膜晶体管及其制作方法、显示基板、显示装置
US9484362B2 (en) Display substrate and method of manufacturing a display substrate
US9508544B2 (en) Semiconductor device and method for manufacturing same
WO2013139135A1 (zh) 阵列基板及其制作方法、显示装置
CN105097944A (zh) 薄膜晶体管及其制备方法、阵列基板、显示装置
TWI546850B (zh) 顯示面板之製備方法
WO2015188476A1 (zh) 薄膜晶体管及其制作方法、oled背板和显示装置
TWI470808B (zh) 半導體元件及其製作方法
US20230420573A1 (en) Thin film transistor and method of manufactruting thin film transistor
CN215644507U (zh) 薄膜晶体管和阵列基板
WO2022267043A1 (zh) 氧化物薄膜晶体管及其制备方法、显示装置
WO2022247148A1 (zh) 薄膜晶体管及其制备方法、阵列基板
WO2023028872A1 (zh) 金属氧化物薄膜晶体管及制作方法、显示面板和显示装置
EP4345909A1 (en) Oxide thin film transistor and manufacturing method therefor, and electronic device
CN113314463B (zh) 薄膜晶体管基板的制备方法、薄膜晶体管基板和显示装置
WO2022193063A1 (zh) 一种薄膜晶体管、显示基板及其制作方法和显示装置
US20230343837A1 (en) Display panel and display device
CN115036332A (zh) 阵列基板及其制备方法、显示面板

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination