CN115735428A - 氧化物薄膜晶体管及其制备方法、显示装置 - Google Patents

氧化物薄膜晶体管及其制备方法、显示装置 Download PDF

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CN115735428A
CN115735428A CN202180001623.9A CN202180001623A CN115735428A CN 115735428 A CN115735428 A CN 115735428A CN 202180001623 A CN202180001623 A CN 202180001623A CN 115735428 A CN115735428 A CN 115735428A
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insulating layer
oxide semiconductor
layer
oxide
thin film
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王利忠
袁广才
宁策
姚念琦
胡合合
雷利平
王东方
薛大鹏
董水浪
李正亮
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
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    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本公开至少一实施例提供一种氧化物薄膜晶体管、显示装置和氧化物薄膜晶体管的制备方法，该氧化物薄膜晶体管(100)包括：衬底基板(101)；设置在衬底基板(101)上的氧化物半导体层(105)；设置在氧化物半导体层(105)的远离衬底基板(101)一侧的绝缘层(108)，其中，该绝缘层(108)的材料为氧化物，绝缘层(108)包括层叠设置的第一绝缘层(108b)和第二绝缘层(108a)，第二绝缘层(108a)的致密度大于第一绝缘层(108b)的致密度，且第二绝缘层(108a)相对于第一绝缘层更远离衬底基板(101)，本公开的实施例至少将第一绝缘层和第二绝缘层的致密度和厚度进行了调整，将氧化物半导体层中的氧固定在氧化物半导体层中，以减少后续高温退火工艺中氧化物半导体层中氧元素的流失，从而保证了氧化物薄膜晶体管特性的稳定。

Description

PCT国内申请，说明书已公开。

Claims (27)

  1. PCT国内申请，权利要求书已公开。
CN202180001623.9A 2021-06-25 2021-06-25 氧化物薄膜晶体管及其制备方法、显示装置 Pending CN115735428A (zh)

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US (1) US20240097042A1 (zh)
EP (1) EP4207303A4 (zh)
JP (1) JP2024528497A (zh)
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WO (1) WO2022267043A1 (zh)

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Publication number Priority date Publication date Assignee Title
CN1263159C (zh) * 1999-06-02 2006-07-05 株式会社半导体能源研究所 半导体器件及其制造方法
WO2009034953A1 (ja) * 2007-09-10 2009-03-19 Idemitsu Kosan Co., Ltd. 薄膜トランジスタ
JP2011222767A (ja) * 2010-04-09 2011-11-04 Sony Corp 薄膜トランジスタならびに表示装置および電子機器
CN102664194B (zh) * 2012-04-10 2015-01-07 深超光电（深圳）有限公司 薄膜晶体管
CN103000694B (zh) * 2012-12-13 2015-08-19 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示装置
KR102089314B1 (ko) * 2013-05-14 2020-04-14 엘지디스플레이 주식회사 산화물 박막 트랜지스터 및 그 제조방법
JPWO2015059850A1 (ja) * 2013-10-24 2017-03-09 株式会社Ｊｏｌｅｄ 薄膜トランジスタの製造方法
US10714633B2 (en) * 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP6808689B2 (ja) * 2018-07-23 2021-01-06 株式会社Ｊｏｌｅｄ 薄膜トランジスタ基板および発光装置
WO2020089726A1 (ja) * 2018-11-02 2020-05-07 株式会社半導体エネルギー研究所 半導体装置
US11393888B2 (en) * 2019-06-13 2022-07-19 Samsung Display Co., Ltd. Thin film transistor substrate and display apparatus including the same
CN112103246A (zh) * 2020-09-23 2020-12-18 福建华佳彩有限公司 一种tft阵列基板结构及制作方法
CN112038289B (zh) * 2020-11-04 2021-02-02 成都中电熊猫显示科技有限公司 一种阵列基板、显示面板以及阵列基板的制作方法

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US20240097042A1 (en) 2024-03-21
EP4207303A1 (en) 2023-07-05
WO2022267043A1 (zh) 2022-12-29
EP4207303A4 (en) 2024-01-10

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