CN1155140A - 磁记录媒体器件的经氟化处理的类金刚石碳保护覆层 - Google Patents

磁记录媒体器件的经氟化处理的类金刚石碳保护覆层 Download PDF

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CN1155140A
CN1155140A CN95109588A CN95109588A CN1155140A CN 1155140 A CN1155140 A CN 1155140A CN 95109588 A CN95109588 A CN 95109588A CN 95109588 A CN95109588 A CN 95109588A CN 1155140 A CN1155140 A CN 1155140A
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CN1073252C (zh
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A·格里尔
V·V·帕特尔
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Abstract

磁记录媒体器件表面的一种经改进的耐磨保护性被覆层，由经氟化的类金刚石碳用等离子体增强化学汽相淀积法或其它适当的方法淀积成，具有减小摩阻和静摩阻的优异性能。

Description

磁记录媒体器件的经氟化处理 的类金刚石碳保护覆层
本发明总的来涉及象磁盘和磁头之类的薄膜磁记录媒体器件，更具体地说，涉及一种被覆在这类器件上、耐磨性能有所改进，低摩擦和低静摩擦的保护性覆层，以及这种覆层被覆到磁记录媒体器件上的方法。
设计薄膜磁记录媒体器件时，为确保器件使用寿命和可靠性，重要的一点是给器件的最上层表面敷上保护性覆层。用氢处理过的类金刚石碳(DIC)是摩擦系数较低的硬质耐磨材料，象薄膜磁盘和磁记录头之类的磁记录媒体器件历来都采用DLC作为保护性被覆层。
例如，美国专利4,647,494和美国专利5,159,508就公开了将氢处理过的薄层碳膜分别被覆到磁记录盘和磁头滑座上的作法。但这两个专利公开的方法都需要在敷上氢处理过的碳被覆层之前在衬底上另外敷上助粘层。因此这两个专利介绍的是两步淀积法。要提高这些器件的耐磨性，必须在保护性DLC被覆层表面使用液体润化剂。现代的记录器件为提高记录密度，减小了磁头与磁盘之间的间距，在这种情况下，最好能消除额外的润滑层。表面张力和弯液面的形成会增加静摩擦，为消除这两种因素，最好也不用液体润化剂。往磁盘表面加液体润化剂是需要若干处理工序的，因而不用液体润化剂可降低制造这类磁盘的造价。
取消液体润化剂的一个方法是进一步减小DLC被覆层的摩擦系数。Miyake等人在1991年美国机械工程师学会的摩擦学说论文集(J.Tribol Trans.ASME113(1991)384)中就公开了这种方法。先是用电子回旋共振淀积法淀积厚1微米左右的含硅碳膜，再把试样表面暴露在CF4等离子体中加以氟化。实验证明，DLC经氟化处理的表面可减小DLC薄膜的摩阻和微量磨损。由于氟化工序是在淀积DLC薄膜之后进行的，氟化作用只局限于最上层的被覆层。鉴于被覆层一磨损磨除了氟化层，因而经一段较短时间的磨损之后，失去了其润化作用的优点。若氟化处理是在保护层的整个厚度上进行的，则可以扩大其保持耐磨作用的优点。
过去，还有其他人都制备过氟化处理过的DLC薄膜。例如，Seth等人在1993年的“固态薄膜”杂志(Thin Solid Films，230(1993)90)上报道过，含氟量高的薄膜其密度大幅度下降，这表明薄膜的结构较松散。这种薄膜特别软，不耐磨。
因此本发明的目的是提供具有经氟化处理的DLC保护性被覆层的磁记录媒体器件，它没有传统保护覆层所具有的那种缺点。
本发明的另一个目的是提供一种磁记录媒体器件用的经氟化处理的DLC保护性被覆层，该层具备充分的耐磨性而无需使用液体润滑剂。
本发明的又一个目的是提供磁记录媒体器件的一种经氟化处理的DLC保护性被覆层，它在整个被覆层厚度上耐磨性优异因而不致随最上层表面的磨损而变坏。
本发明的又另一个目的是提供磁记录媒体器件的一种经氟化处理的DLC保护性被覆层，它无需中间助粘层可直接敷到器件最上层表面。
本发明还有另一个目的，即提供磁记录媒体器件的一种耐磨性能优异、静摩阻减小的经氟化处理的DLC保护性被覆层。
本发明还有又另一个目的，即提供磁记录媒体器件的一种经氟化处理的DLC保护性被覆层，它可在低于250℃温度下在等离子体增强型化学汽相淀积室中淀积形成。
本发明的磁记录媒体器件用的经氟化处理的类金刚石般碳保护性被覆层可用淀积类金刚石碳膜用的淀积法敷上。
在最佳实施例中，为使磁记录盘或磁头耐磨并减小其摩阻和静摩阻，给磁盘或磁头覆上经氟化处理的类金刚石碳(FDLC)硬质被覆层。FDLC薄膜是用等离子体增强化学汽相淀积法(PECVD)在加了负偏压的衬底上用经氟化处理的烃与氢的混合科制备的，最好经氟化处理的烃其氟对碳的分子比较大，例如六氟代苯(C6F6)或氟苯(C6HF6)。采用适当的反应气体混合科、等离子体参数和衬底偏压可以获取耐磨性能优异的经氟化处理的碳膜。由于氟化处理是在整个碳膜的整个厚度上进行的，因而表面层因磨损而剥落时不会改变保护膜的组成和耐磨性能。
在另一个实施例中，FDLC薄膜是和未经氟化处理的类金刚石碳(DLC)组成的薄的中间层一层淀积的。例如，DLC层厚度可以是4纳米左右，再加上6纳米厚的DFLC顶层。
本发明还涉及用等离子体增强化学淀积法在磁记录媒体上淀积经氟化处理的类金刚石碳保护性被覆层或两层DLC/FDLC被覆层的方法。
参阅本发明的说明书和附图可以更清楚地了解本发明的其它目的、特点和优点。附图中：
图1是本发明耐磨FDLC被覆层所被覆的记录器件上层经放大的示意剖视图；
图2是本发明的被覆有耐磨DLC中间层和FDLC上层的记录器件上层的放大示意剖视图；
图3是本发明的被覆有FDLC或DLC/FDLC保护覆层的磁盘上层放大示意剖视图；
图4是本发明的FDLC或DLC/FDLC被覆层所保护的读/写头和垫底材料的活性金属层的放大示意剖视图。
本发明提供了一种磁记录媒体器件的可用等离子体增强化学汽相淀积法积的经氟化处理的类金刚石碳保护覆层。
首先准备好磁记录器件的表面可以进行被覆之后，将器件装入平行板等离子体反应器中，并将其电连接得使其成为其中一个电极。将反应器抽成预定的负压，再往反应器中通入经氟化的烃蒸汽与氢气组成的适当，反应气体同时将反应器内的压力值控制在所要求的30毫乇与300毫乇范围之间。接着往反应器的电极上加直流电或射频电源将等离子体引燃起来，使待被覆的器件相对于地或反应器的其它部分负向偏置，令器件保持处在等离子体中，直到被覆层达到所要求的厚度为止。被覆层的厚度最好在3纳米到30纳米的范围之间。
先参看图1，这是记录器件10的上层12的放大示意剖视图，该上层12由耐磨FDLC保护层14所被覆。在本发明的一个最佳实施例中，单层FDLC层14的厚度约为10纳米。膜层用流速为0.8厘米/秒的C6F6和流速为16厘米/秒的H2组成的混合反应气体淀积。在反应过程中，反应器的压力维持在100毫乇，等离子体则在电压控制下用直流电源维持其等离子状态。器件接直流800伏的负偏压。
图2示出了本发明的另一个实施例；是记录器件20上层22的放大剖视图，上层22上被覆有耐磨DLC的中间层24和耐磨FDLC的上层26。在此实施例中，DLC层24的厚度约为4纳米，再加上约为6纳米厚的FDLC层26。在此保护覆层的另一结构中，DLC层的厚度以大约2纳米至10纳米为宜，上部FDLC层的厚度则以3纳米至30纳米为宜。DLC中间层24可按淀积FDLC层时采用的同样条件进行淀积，但气体混合料采用10厘米/秒的环已烷。
图3示出了磁记录盘30经放大的剖视图，盘衬底32用磁性层34被覆着，磁性层34又为本发明的FDLC层36被覆着。图4示出了磁记录头40经放大的剖视图，磁记录头40的垫底层42有个有源读/写器件44，被覆有本发明的FDLC保护性被覆层46。
在FDLC膜的另一淀积实例中，淀积过程采用流速为0.8厘米/秒的C6F6和流速为16厘米/秒的H2组成的混合反应气体。反应容器的压力在反应过程中维持在30毫乇，夹持待被覆器件的电极上加有50瓦的射频电源，获取大约直流350伏的负偏压。DLC被覆层可在同样的条件下进行淀积，但气体混合料采用10厘米/秒的环己烷(C6H12)。
所有实例中使用的淀积温度保持在250℃以下。在此淀积条件下，淀积速度可达70纳米/分。
上述保护性薄膜经针盘式摩擦测试仪钢球试验，发现FDLC膜层的耐磨性与未经氟化处理的DLC薄膜相似。例如，在11克的负荷下采用直径0.8厘米的410℃滚珠轴承钢制成的钢针时，深度磨损率为0.07至0.5纳米/千转。但FDLC薄膜的静摩阻性能比DLC薄膜有所减小，即约为未氟化DLC的30％。
至此已就本发明做了举例性的说明，但应该理解的是，说明中的措词仅仅是叙述文的措词，完全没有限定本发明的意思。
此外，尽管本发明是就其最佳实施例和其另一实施例进行说明的，但不言而喻，本技术领域的行家们不难将这些教导应用到本发明其它可能的方案中。例如，可以采用DLC和FDLC膜层的其它结构和其它被覆法来淀积薄膜而达到本发明所要求的同样效果。

Claims (20)

1.一种磁记录媒体器件，其特征在于，其最上层的保护层为耐磨的、静摩阻有所减小、经氟化处理的类金刚石碳膜PDLC。
2.如权利要求1所述的磁记录媒体器件，其特征在于，所述器件为磁记录盘、磁读/写头或其它适当的记录器件。
3.如权利要求1所述的磁记录媒体器件，其特征在于，所述薄膜FDLC层的整个厚度含氟。
4.如权利要求1所述的磁记录媒体器件，其特征在于，薄膜中的F/(F+C)原子比约为2原子％与大约70原子％之间，最好在约10原子％与约40原子％之间。
5.如权利要求3所述的磁记录媒体器件，其特征在于，所述薄膜中氢的原子浓度在大约0与大约40原子％之间，最好在大约0与大约20原子％之间。
6.如权利要求1所述的磁记录媒体器件，其特征在于，所述薄膜的耐磨性为未经氟化处理的类金刚石碳膜的大约0.2和大约1之间。
7.如权利要求1所述的磁记录媒体器件，其特征在于，所述FDLC薄膜直接淀积在待保护的表面上。
8.如权利要求1所述的磁记录媒体器件，其特征在于，所述FDLC膜的厚度在大约4纳米和大约30纳米之间，最好在大约5纳米和大约10纳米之间。
9.如权利要求1所述的磁记录媒体器件，其特征在于，FDLC膜与待保护的表面之间淀积有一层类金刚石中间碳膜层。
10.如权利要求9所述的磁记录媒体器件，其特征在于，所述DLC薄层的厚度在大约2纳米和大约10纳米之间，最好在大约3纳米和5纳米之间。
11.如权利要求9所述的磁记录媒体器件，其特征在于，所述FDLC膜层的厚度在大约3纳米和大约30纳米之间，最好在大约5纳米和大约7纳米之间。
12.一种磁记录媒体器件，其特征在于，其垫底结构的顶部表面被覆有磁性材料，且所述磁性材料最上层的表面被覆有经氟化的类金刚石碳质材料。
13.如权利要求12所述的磁记录媒体器件，其特征在于，所述保护被覆层的整个FDLC层厚度含氟。
14.如权利要求12所述的磁记录媒体器件，其特征在于，所述器件选自由磁记录盘、磁读写头和其他合适器件组成的组。
15.如权利要求12所述的磁记录媒体器件，其特征在于，所述FDLC膜层与所述磁性材料最上部表面之间淀积有类金刚石的中间碳膜层。
16.如权利要求12所述的磁记录媒体器件，其特征在于，所述FDLC膜层的厚度在大约3纳米与大约30纳米之间，最好在大约5纳米和大约10纳米之间。
17.制造磁记录媒体器件的一种方法，其特征在于，它包括下列步骤：
在垫底构件上淀积磁活性材料，所述磁活性材料能存储信息或读/写信息；和
在所述磁活性材料的最上部表面淀积上经氟化处理的类金刚石碳膜组成的保护性被覆层。
18.如权利要求17所述的制造磁记录媒质器件的方法，其特征在于，淀积上的所述FDLC膜层的厚度在大约3纳米和大约30纳米之间。
19.如权利要求17所述的制造磁记录媒体器件的方法，其特征在于，所述FDLC膜层的整个厚度都含氟。
20.如权利要求17所述的制造磁记录媒体器件的方法，其特征在于，它还包括下列步骤：先有所述磁活性材料的最上部表面上淀积中间DLC膜层，再在所述DLC薄层表面淀积上FDLC膜层。
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