CN115485857A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN115485857A
CN115485857A CN202180030791.0A CN202180030791A CN115485857A CN 115485857 A CN115485857 A CN 115485857A CN 202180030791 A CN202180030791 A CN 202180030791A CN 115485857 A CN115485857 A CN 115485857A
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CN
China
Prior art keywords
layer
region
conductivity type
mentioned
collector
Prior art date
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Pending
Application number
CN202180030791.0A
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English (en)
Chinese (zh)
Inventor
宫田征典
米田秀司
妹尾贤
药师川裕贵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of CN115485857A publication Critical patent/CN115485857A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202180030791.0A 2020-04-28 2021-04-23 半导体装置 Pending CN115485857A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020079269A JP7435214B2 (ja) 2020-04-28 2020-04-28 半導体装置
JP2020-079269 2020-04-28
PCT/JP2021/016486 WO2021220965A1 (ja) 2020-04-28 2021-04-23 半導体装置

Publications (1)

Publication Number Publication Date
CN115485857A true CN115485857A (zh) 2022-12-16

Family

ID=78278327

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180030791.0A Pending CN115485857A (zh) 2020-04-28 2021-04-23 半导体装置

Country Status (4)

Country Link
US (2) US12363997B2 (enExample)
JP (1) JP7435214B2 (enExample)
CN (1) CN115485857A (enExample)
WO (1) WO2021220965A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7729175B2 (ja) 2021-10-26 2025-08-26 住友ゴム工業株式会社 タイヤ
JP7692875B2 (ja) * 2022-05-16 2025-06-16 三菱電機株式会社 パワー半導体装置およびパワー半導体装置の製造方法
JP2024080317A (ja) * 2022-12-02 2024-06-13 株式会社デンソー 半導体装置とその製造方法
JP2024154236A (ja) * 2023-04-18 2024-10-30 株式会社デンソー 半導体装置とその製造方法
JP2024162687A (ja) * 2023-05-11 2024-11-21 株式会社デンソー 半導体装置とその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003303965A (ja) * 2002-04-09 2003-10-24 Toshiba Corp 半導体素子及びその製造方法
CN102832216A (zh) * 2011-06-15 2012-12-19 株式会社电装 包括绝缘栅双极晶体管和二极管的半导体设备
CN104916670A (zh) * 2014-03-14 2015-09-16 株式会社东芝 半导体装置
CN110649090A (zh) * 2018-06-27 2020-01-03 三菱电机株式会社 半导体装置、半导体装置的制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4746927B2 (ja) * 2005-07-01 2011-08-10 新電元工業株式会社 半導体装置の製造方法
JP2016086136A (ja) * 2014-10-29 2016-05-19 トヨタ自動車株式会社 半導体装置の製造方法
JP6954449B2 (ja) * 2018-03-15 2021-10-27 富士電機株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003303965A (ja) * 2002-04-09 2003-10-24 Toshiba Corp 半導体素子及びその製造方法
CN102832216A (zh) * 2011-06-15 2012-12-19 株式会社电装 包括绝缘栅双极晶体管和二极管的半导体设备
CN104916670A (zh) * 2014-03-14 2015-09-16 株式会社东芝 半导体装置
CN110649090A (zh) * 2018-06-27 2020-01-03 三菱电机株式会社 半导体装置、半导体装置的制造方法

Also Published As

Publication number Publication date
WO2021220965A1 (ja) 2021-11-04
US20250301773A1 (en) 2025-09-25
JP2021174924A (ja) 2021-11-01
US12363997B2 (en) 2025-07-15
US20230037409A1 (en) 2023-02-09
JP7435214B2 (ja) 2024-02-21

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