JP7435214B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7435214B2
JP7435214B2 JP2020079269A JP2020079269A JP7435214B2 JP 7435214 B2 JP7435214 B2 JP 7435214B2 JP 2020079269 A JP2020079269 A JP 2020079269A JP 2020079269 A JP2020079269 A JP 2020079269A JP 7435214 B2 JP7435214 B2 JP 7435214B2
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JP
Japan
Prior art keywords
layer
region
semiconductor substrate
fwd
igbt
Prior art date
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Active
Application number
JP2020079269A
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English (en)
Japanese (ja)
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JP2021174924A5 (enExample
JP2021174924A (ja
Inventor
征典 宮田
秀司 米田
賢 妹尾
裕貴 薬師川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2020079269A priority Critical patent/JP7435214B2/ja
Priority to PCT/JP2021/016486 priority patent/WO2021220965A1/ja
Priority to CN202180030791.0A priority patent/CN115485857A/zh
Publication of JP2021174924A publication Critical patent/JP2021174924A/ja
Priority to US17/972,945 priority patent/US12363997B2/en
Publication of JP2021174924A5 publication Critical patent/JP2021174924A5/ja
Application granted granted Critical
Publication of JP7435214B2 publication Critical patent/JP7435214B2/ja
Priority to US19/231,815 priority patent/US20250301773A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2020079269A 2020-04-28 2020-04-28 半導体装置 Active JP7435214B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2020079269A JP7435214B2 (ja) 2020-04-28 2020-04-28 半導体装置
PCT/JP2021/016486 WO2021220965A1 (ja) 2020-04-28 2021-04-23 半導体装置
CN202180030791.0A CN115485857A (zh) 2020-04-28 2021-04-23 半导体装置
US17/972,945 US12363997B2 (en) 2020-04-28 2022-10-25 Semiconductor device
US19/231,815 US20250301773A1 (en) 2020-04-28 2025-06-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020079269A JP7435214B2 (ja) 2020-04-28 2020-04-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2021174924A JP2021174924A (ja) 2021-11-01
JP2021174924A5 JP2021174924A5 (enExample) 2022-11-07
JP7435214B2 true JP7435214B2 (ja) 2024-02-21

Family

ID=78278327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020079269A Active JP7435214B2 (ja) 2020-04-28 2020-04-28 半導体装置

Country Status (4)

Country Link
US (2) US12363997B2 (enExample)
JP (1) JP7435214B2 (enExample)
CN (1) CN115485857A (enExample)
WO (1) WO2021220965A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7729175B2 (ja) 2021-10-26 2025-08-26 住友ゴム工業株式会社 タイヤ
JP7692875B2 (ja) * 2022-05-16 2025-06-16 三菱電機株式会社 パワー半導体装置およびパワー半導体装置の製造方法
JP2024080317A (ja) * 2022-12-02 2024-06-13 株式会社デンソー 半導体装置とその製造方法
JP2024154236A (ja) * 2023-04-18 2024-10-30 株式会社デンソー 半導体装置とその製造方法
JP2024162687A (ja) * 2023-05-11 2024-11-21 株式会社デンソー 半導体装置とその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003303965A (ja) 2002-04-09 2003-10-24 Toshiba Corp 半導体素子及びその製造方法
JP6158123B2 (ja) 2014-03-14 2017-07-05 株式会社東芝 半導体装置
WO2019176810A1 (ja) 2018-03-15 2019-09-19 富士電機株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4746927B2 (ja) * 2005-07-01 2011-08-10 新電元工業株式会社 半導体装置の製造方法
JP5937413B2 (ja) * 2011-06-15 2016-06-22 株式会社デンソー 半導体装置
JP2016086136A (ja) * 2014-10-29 2016-05-19 トヨタ自動車株式会社 半導体装置の製造方法
JP7024626B2 (ja) 2018-06-27 2022-02-24 三菱電機株式会社 半導体装置、半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003303965A (ja) 2002-04-09 2003-10-24 Toshiba Corp 半導体素子及びその製造方法
JP6158123B2 (ja) 2014-03-14 2017-07-05 株式会社東芝 半導体装置
WO2019176810A1 (ja) 2018-03-15 2019-09-19 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
US20230037409A1 (en) 2023-02-09
WO2021220965A1 (ja) 2021-11-04
US12363997B2 (en) 2025-07-15
CN115485857A (zh) 2022-12-16
US20250301773A1 (en) 2025-09-25
JP2021174924A (ja) 2021-11-01

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