CN115117051A - 半导体装置以及半导体系统 - Google Patents

半导体装置以及半导体系统 Download PDF

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Publication number
CN115117051A
CN115117051A CN202110906326.0A CN202110906326A CN115117051A CN 115117051 A CN115117051 A CN 115117051A CN 202110906326 A CN202110906326 A CN 202110906326A CN 115117051 A CN115117051 A CN 115117051A
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CN
China
Prior art keywords
diffusion region
type diffusion
type
transistor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110906326.0A
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English (en)
Chinese (zh)
Inventor
濑下敏树
栗山保彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Publication of CN115117051A publication Critical patent/CN115117051A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CN202110906326.0A 2021-03-17 2021-08-09 半导体装置以及半导体系统 Pending CN115117051A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-043381 2021-03-17
JP2021043381A JP7413303B2 (ja) 2021-03-17 2021-03-17 半導体装置及び半導体システム

Publications (1)

Publication Number Publication Date
CN115117051A true CN115117051A (zh) 2022-09-27

Family

ID=83284221

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110906326.0A Pending CN115117051A (zh) 2021-03-17 2021-08-09 半导体装置以及半导体系统

Country Status (3)

Country Link
US (1) US12142604B2 (enrdf_load_stackoverflow)
JP (1) JP7413303B2 (enrdf_load_stackoverflow)
CN (1) CN115117051A (enrdf_load_stackoverflow)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4131983A (en) * 1975-12-29 1979-01-02 Texas Instruments Incorporated Adjustment of avalanche voltage in DIFMOS memory devices by control of impurity doping
JPH08195443A (ja) * 1995-01-18 1996-07-30 Fujitsu Ltd 半導体装置及びその製造方法
US6521952B1 (en) * 2001-10-22 2003-02-18 United Microelectronics Corp. Method of forming a silicon controlled rectifier devices in SOI CMOS process for on-chip ESD protection
US20080007882A1 (en) * 2006-07-05 2008-01-10 Atmel Corporation Noise immune rc trigger for esd protection
CN102315212A (zh) * 2010-06-29 2012-01-11 上海宏力半导体制造有限公司 栅驱动晶闸管电路以及静电保护电路
CN102593804A (zh) * 2011-01-07 2012-07-18 台湾积体电路制造股份有限公司 Esd保护器件以及用于形成esd保护器件的方法
CN102810538A (zh) * 2011-06-03 2012-12-05 索尼公司 半导体集成电路及其制造方法
CN103646945A (zh) * 2013-12-03 2014-03-19 北京中电华大电子设计有限责任公司 集成电路电源esd保护电路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989057A (en) 1988-05-26 1991-01-29 Texas Instruments Incorporated ESD protection for SOI circuits
JPH0837284A (ja) 1994-07-21 1996-02-06 Nippondenso Co Ltd 半導体集積回路装置
JP4102277B2 (ja) 2003-09-12 2008-06-18 株式会社東芝 半導体集積回路装置
DE102008001368A1 (de) 2008-04-24 2009-10-29 Robert Bosch Gmbh Flächenoptimierte ESD-Schutzschaltung
JP5273604B2 (ja) 2008-08-22 2013-08-28 株式会社メガチップス Ｅｓｄ保護回路
JP2014026996A (ja) 2012-07-24 2014-02-06 Toshiba Corp Ｅｓｄ保護回路
JP6623139B2 (ja) 2016-10-24 2019-12-18 株式会社東芝 Ｅｓｄ保護回路
WO2019012839A1 (ja) 2017-07-12 2019-01-17 ソニーセミコンダクタソリューションズ株式会社 トランジスタ及び電子機器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4131983A (en) * 1975-12-29 1979-01-02 Texas Instruments Incorporated Adjustment of avalanche voltage in DIFMOS memory devices by control of impurity doping
JPH08195443A (ja) * 1995-01-18 1996-07-30 Fujitsu Ltd 半導体装置及びその製造方法
US6521952B1 (en) * 2001-10-22 2003-02-18 United Microelectronics Corp. Method of forming a silicon controlled rectifier devices in SOI CMOS process for on-chip ESD protection
US20080007882A1 (en) * 2006-07-05 2008-01-10 Atmel Corporation Noise immune rc trigger for esd protection
CN102315212A (zh) * 2010-06-29 2012-01-11 上海宏力半导体制造有限公司 栅驱动晶闸管电路以及静电保护电路
CN102593804A (zh) * 2011-01-07 2012-07-18 台湾积体电路制造股份有限公司 Esd保护器件以及用于形成esd保护器件的方法
CN102810538A (zh) * 2011-06-03 2012-12-05 索尼公司 半导体集成电路及其制造方法
CN103646945A (zh) * 2013-12-03 2014-03-19 北京中电华大电子设计有限责任公司 集成电路电源esd保护电路

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JP2022143051A (ja) 2022-10-03
JP7413303B2 (ja) 2024-01-15
US20220302103A1 (en) 2022-09-22
US12142604B2 (en) 2024-11-12

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