CN1146973C - 受控切分处理 - Google Patents
受控切分处理 Download PDFInfo
- Publication number
- CN1146973C CN1146973C CNB988049767A CN98804976A CN1146973C CN 1146973 C CN1146973 C CN 1146973C CN B988049767 A CNB988049767 A CN B988049767A CN 98804976 A CN98804976 A CN 98804976A CN 1146973 C CN1146973 C CN 1146973C
- Authority
- CN
- China
- Prior art keywords
- energy
- substrate
- processing
- described processing
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
- B26D3/28—Splitting layers from work; Mutually separating layers by cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F3/00—Severing by means other than cutting; Apparatus therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F3/00—Severing by means other than cutting; Apparatus therefor
- B26F3/002—Precutting and tensioning or breaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Forests & Forestry (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4627697P | 1997-05-12 | 1997-05-12 | |
US60/046,276 | 1997-05-12 | ||
US09/026,115 US6155909A (en) | 1997-05-12 | 1998-02-19 | Controlled cleavage system using pressurized fluid |
US09/026,027 | 1998-02-19 | ||
US09/026,027 US5994207A (en) | 1997-05-12 | 1998-02-19 | Controlled cleavage process using pressurized fluid |
US09/026,115 | 1998-02-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1255237A CN1255237A (zh) | 2000-05-31 |
CN1146973C true CN1146973C (zh) | 2004-04-21 |
Family
ID=27362676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB988049767A Expired - Lifetime CN1146973C (zh) | 1997-05-12 | 1998-05-11 | 受控切分处理 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0995227A4 (fr) |
JP (1) | JP2001525991A (fr) |
CN (1) | CN1146973C (fr) |
AU (1) | AU7685198A (fr) |
CA (1) | CA2290104A1 (fr) |
WO (1) | WO1998052216A1 (fr) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG71182A1 (en) | 1997-12-26 | 2000-03-21 | Canon Kk | Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method |
SG70141A1 (en) | 1997-12-26 | 2000-01-25 | Canon Kk | Sample separating apparatus and method and substrate manufacturing method |
US6540861B2 (en) | 1998-04-01 | 2003-04-01 | Canon Kabushiki Kaisha | Member separating apparatus and processing apparatus |
JP2000349264A (ja) * | 1998-12-04 | 2000-12-15 | Canon Inc | 半導体ウエハの製造方法、使用方法および利用方法 |
JP4365920B2 (ja) * | 1999-02-02 | 2009-11-18 | キヤノン株式会社 | 分離方法及び半導体基板の製造方法 |
EP1039513A3 (fr) * | 1999-03-26 | 2008-11-26 | Canon Kabushiki Kaisha | Méthode de formation d'une plaquette SOI |
FR2795865B1 (fr) * | 1999-06-30 | 2001-08-17 | Commissariat Energie Atomique | Procede de realisation d'un film mince utilisant une mise sous pression |
FR2796491B1 (fr) | 1999-07-12 | 2001-08-31 | Commissariat Energie Atomique | Procede de decollement de deux elements et dispositif pour sa mise en oeuvre |
FR2797347B1 (fr) * | 1999-08-04 | 2001-11-23 | Commissariat Energie Atomique | Procede de transfert d'une couche mince comportant une etape de surfragililisation |
AU6905000A (en) * | 1999-08-10 | 2001-03-05 | Silicon Genesis Corporation | A cleaving process to fabricate multilayered substrates using low implantation doses |
US6653209B1 (en) | 1999-09-30 | 2003-11-25 | Canon Kabushiki Kaisha | Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device |
FR2809867B1 (fr) * | 2000-05-30 | 2003-10-24 | Commissariat Energie Atomique | Substrat fragilise et procede de fabrication d'un tel substrat |
FR2811807B1 (fr) * | 2000-07-12 | 2003-07-04 | Commissariat Energie Atomique | Procede de decoupage d'un bloc de materiau et de formation d'un film mince |
JP2002075917A (ja) | 2000-08-25 | 2002-03-15 | Canon Inc | 試料の分離装置及び分離方法 |
FR2817395B1 (fr) | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
FR2818010B1 (fr) | 2000-12-08 | 2003-09-05 | Commissariat Energie Atomique | Procede de realisation d'une couche mince impliquant l'introduction d'especes gazeuses |
FR2819099B1 (fr) * | 2000-12-28 | 2003-09-26 | Commissariat Energie Atomique | Procede de realisation d'une structure empilee |
JP4803884B2 (ja) * | 2001-01-31 | 2011-10-26 | キヤノン株式会社 | 薄膜半導体装置の製造方法 |
JP2002305293A (ja) | 2001-04-06 | 2002-10-18 | Canon Inc | 半導体部材の製造方法及び半導体装置の製造方法 |
US6770966B2 (en) * | 2001-07-31 | 2004-08-03 | Intel Corporation | Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat |
TW558743B (en) * | 2001-08-22 | 2003-10-21 | Semiconductor Energy Lab | Peeling method and method of manufacturing semiconductor device |
FR2834380B1 (fr) | 2002-01-03 | 2005-02-18 | Soitec Silicon On Insulator | Dispositif de coupe de couche d'un substrat, et procede associe |
FR2847714B1 (fr) * | 2002-11-27 | 2005-02-18 | Soitec Silicon On Insulator | Procede et dispositif de recuit de tranche de semiconducteur |
TWI233154B (en) | 2002-12-06 | 2005-05-21 | Soitec Silicon On Insulator | Method for recycling a substrate |
EP1427002B1 (fr) * | 2002-12-06 | 2017-04-12 | Soitec | Méthode de recyclage d'un substrat par découpage localisé |
JP4151421B2 (ja) * | 2003-01-23 | 2008-09-17 | セイコーエプソン株式会社 | デバイスの製造方法 |
JP2005039114A (ja) * | 2003-07-17 | 2005-02-10 | Disco Abrasive Syst Ltd | 半導体ウェーハ移し替え装置 |
WO2005091283A1 (fr) * | 2004-03-22 | 2005-09-29 | Oc Oerlikon Balzers Ag | Procede et appareil de separation de substrats en forme de disques |
DE102004041378B4 (de) | 2004-08-26 | 2010-07-08 | Siltronic Ag | Halbleiterscheibe mit Schichtstruktur mit geringem Warp und Bow sowie Verfahren zu ihrer Herstellung |
DE102005000826A1 (de) | 2005-01-05 | 2006-07-20 | Siltronic Ag | Halbleiterscheibe mit Silicium-Germanium-Schicht und Verfahren zu deren Herstellung |
CN101248519B (zh) | 2005-02-28 | 2011-08-24 | 硅源公司 | 衬底硬化方法及所得器件 |
JP5064692B2 (ja) * | 2006-02-09 | 2012-10-31 | 信越化学工業株式会社 | Soi基板の製造方法 |
JP5064693B2 (ja) * | 2006-02-13 | 2012-10-31 | 信越化学工業株式会社 | Soi基板の製造方法 |
US8293619B2 (en) * | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
JP2008112847A (ja) | 2006-10-30 | 2008-05-15 | Shin Etsu Chem Co Ltd | 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池 |
JP5284576B2 (ja) * | 2006-11-10 | 2013-09-11 | 信越化学工業株式会社 | 半導体基板の製造方法 |
JP5166745B2 (ja) * | 2007-03-07 | 2013-03-21 | 信越化学工業株式会社 | 単結晶シリコン太陽電池の製造方法 |
US20100193900A1 (en) * | 2007-07-13 | 2010-08-05 | National University Corporation Tohoku University | Soi substrate and semiconductor device using an soi substrate |
JP2010021398A (ja) * | 2008-07-11 | 2010-01-28 | Disco Abrasive Syst Ltd | ウェーハの処理方法 |
US7994064B2 (en) * | 2009-06-15 | 2011-08-09 | Twin Creeks Technologies, Inc. | Selective etch for damage at exfoliated surface |
JP5725430B2 (ja) * | 2011-10-18 | 2015-05-27 | 富士電機株式会社 | 固相接合ウエハの支持基板の剥離方法および半導体装置の製造方法 |
FR2995447B1 (fr) | 2012-09-07 | 2014-09-05 | Soitec Silicon On Insulator | Procede de separation d'au moins deux substrats selon une interface choisie |
JP2014138189A (ja) * | 2013-01-16 | 2014-07-28 | Silicon Genesis Corp | 制御されたプロセス及び結果として生じるデバイス |
CN103077885B (zh) * | 2013-01-31 | 2016-06-01 | 上海新傲科技股份有限公司 | 受控减薄方法以及半导体衬底 |
JP6213046B2 (ja) * | 2013-08-21 | 2017-10-18 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
FR3032555B1 (fr) * | 2015-02-10 | 2018-01-19 | Soitec | Procede de report d'une couche utile |
CN104979262B (zh) * | 2015-05-14 | 2020-09-22 | 浙江中纳晶微电子科技有限公司 | 一种晶圆分离的方法 |
CN106529159A (zh) * | 2016-10-28 | 2017-03-22 | 山东理工大学 | 压电控制单原子链纳米弦横向振动固有角频率计算方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4466852A (en) * | 1983-10-27 | 1984-08-21 | At&T Technologies, Inc. | Method and apparatus for demounting wafers |
DE3803424C2 (de) * | 1988-02-05 | 1995-05-18 | Gsf Forschungszentrum Umwelt | Verfahren zur quantitativen, tiefendifferentiellen Analyse fester Proben |
EP0397237B1 (fr) * | 1989-05-08 | 1994-05-18 | Koninklijke Philips Electronics N.V. | Procédé pour fendre une plaque en matériau fragile |
DE4100526A1 (de) * | 1991-01-10 | 1992-07-16 | Wacker Chemitronic | Vorrichtung und verfahren zum automatischen vereinzeln von gestapelten scheiben |
JPH04359518A (ja) * | 1991-06-06 | 1992-12-11 | Nec Corp | 半導体装置の製造方法 |
FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
EP0536790B1 (fr) * | 1991-10-11 | 2004-03-03 | Canon Kabushiki Kaisha | Procédé pour fabriquer des produits semi-conducteurs |
US5269880A (en) * | 1992-04-03 | 1993-12-14 | Northern Telecom Limited | Tapering sidewalls of via holes |
FR2715503B1 (fr) * | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Substrat pour composants intégrés comportant une couche mince et son procédé de réalisation. |
JP3293736B2 (ja) * | 1996-02-28 | 2002-06-17 | キヤノン株式会社 | 半導体基板の作製方法および貼り合わせ基体 |
JP3257580B2 (ja) * | 1994-03-10 | 2002-02-18 | キヤノン株式会社 | 半導体基板の作製方法 |
FR2725074B1 (fr) | 1994-09-22 | 1996-12-20 | Commissariat Energie Atomique | Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat |
SG65697A1 (en) * | 1996-11-15 | 1999-06-22 | Canon Kk | Process for producing semiconductor article |
CA2233096C (fr) * | 1997-03-26 | 2003-01-07 | Canon Kabushiki Kaisha | Substrat et methode de production |
JP3667079B2 (ja) * | 1997-03-26 | 2005-07-06 | キヤノン株式会社 | 薄膜の形成方法 |
JP2877800B2 (ja) * | 1997-03-27 | 1999-03-31 | キヤノン株式会社 | 複合部材の分離方法、分離された部材、分離装置、半導体基体の作製方法および半導体基体 |
-
1998
- 1998-05-11 CA CA002290104A patent/CA2290104A1/fr not_active Abandoned
- 1998-05-11 JP JP54937198A patent/JP2001525991A/ja active Pending
- 1998-05-11 EP EP98924756A patent/EP0995227A4/fr not_active Withdrawn
- 1998-05-11 WO PCT/US1998/009567 patent/WO1998052216A1/fr not_active Application Discontinuation
- 1998-05-11 CN CNB988049767A patent/CN1146973C/zh not_active Expired - Lifetime
- 1998-05-11 AU AU76851/98A patent/AU7685198A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
AU7685198A (en) | 1998-12-08 |
WO1998052216A1 (fr) | 1998-11-19 |
CN1255237A (zh) | 2000-05-31 |
EP0995227A1 (fr) | 2000-04-26 |
JP2001525991A (ja) | 2001-12-11 |
EP0995227A4 (fr) | 2000-07-05 |
CA2290104A1 (fr) | 1998-11-19 |
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