EP0995227A4 - Procede de clivage controle - Google Patents

Procede de clivage controle

Info

Publication number
EP0995227A4
EP0995227A4 EP98924756A EP98924756A EP0995227A4 EP 0995227 A4 EP0995227 A4 EP 0995227A4 EP 98924756 A EP98924756 A EP 98924756A EP 98924756 A EP98924756 A EP 98924756A EP 0995227 A4 EP0995227 A4 EP 0995227A4
Authority
EP
European Patent Office
Prior art keywords
cleavage process
controlled cleavage
controlled
cleavage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98924756A
Other languages
German (de)
English (en)
Other versions
EP0995227A1 (fr
Inventor
Francois J Henley
Nathan W Cheung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Genesis Corp
Original Assignee
Silicon Genesis Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/026,027 external-priority patent/US5994207A/en
Application filed by Silicon Genesis Corp filed Critical Silicon Genesis Corp
Publication of EP0995227A1 publication Critical patent/EP0995227A1/fr
Publication of EP0995227A4 publication Critical patent/EP0995227A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
    • B26D3/28—Splitting layers from work; Mutually separating layers by cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
    • B26F3/00—Severing by means other than cutting; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
    • B26F3/00—Severing by means other than cutting; Apparatus therefor
    • B26F3/002—Precutting and tensioning or breaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Forests & Forestry (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
EP98924756A 1997-05-12 1998-05-11 Procede de clivage controle Withdrawn EP0995227A4 (fr)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US4627697P 1997-05-12 1997-05-12
US46276P 1997-05-12
US09/026,027 US5994207A (en) 1997-05-12 1998-02-19 Controlled cleavage process using pressurized fluid
US09/026,115 US6155909A (en) 1997-05-12 1998-02-19 Controlled cleavage system using pressurized fluid
US26115 1998-02-19
PCT/US1998/009567 WO1998052216A1 (fr) 1997-05-12 1998-05-11 Procede de clivage controle
US26027 2001-12-20

Publications (2)

Publication Number Publication Date
EP0995227A1 EP0995227A1 (fr) 2000-04-26
EP0995227A4 true EP0995227A4 (fr) 2000-07-05

Family

ID=27362676

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98924756A Withdrawn EP0995227A4 (fr) 1997-05-12 1998-05-11 Procede de clivage controle

Country Status (6)

Country Link
EP (1) EP0995227A4 (fr)
JP (1) JP2001525991A (fr)
CN (1) CN1146973C (fr)
AU (1) AU7685198A (fr)
CA (1) CA2290104A1 (fr)
WO (1) WO1998052216A1 (fr)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG71182A1 (en) 1997-12-26 2000-03-21 Canon Kk Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method
US6418999B1 (en) 1997-12-26 2002-07-16 Cannon Kabushiki Kaisha Sample separating apparatus and method, and substrate manufacturing method
US6540861B2 (en) 1998-04-01 2003-04-01 Canon Kabushiki Kaisha Member separating apparatus and processing apparatus
JP2000349264A (ja) 1998-12-04 2000-12-15 Canon Inc 半導体ウエハの製造方法、使用方法および利用方法
JP4365920B2 (ja) * 1999-02-02 2009-11-18 キヤノン株式会社 分離方法及び半導体基板の製造方法
JP2000349266A (ja) * 1999-03-26 2000-12-15 Canon Inc 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法
FR2795865B1 (fr) * 1999-06-30 2001-08-17 Commissariat Energie Atomique Procede de realisation d'un film mince utilisant une mise sous pression
FR2796491B1 (fr) 1999-07-12 2001-08-31 Commissariat Energie Atomique Procede de decollement de deux elements et dispositif pour sa mise en oeuvre
FR2797347B1 (fr) * 1999-08-04 2001-11-23 Commissariat Energie Atomique Procede de transfert d'une couche mince comportant une etape de surfragililisation
EP1212787B1 (fr) * 1999-08-10 2014-10-08 Silicon Genesis Corporation Procede de clivage permettant de fabriquer des substrats multicouche a l'aide de faibles doses d'implantation
US6653209B1 (en) 1999-09-30 2003-11-25 Canon Kabushiki Kaisha Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device
FR2809867B1 (fr) * 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
JP2002075917A (ja) * 2000-08-25 2002-03-15 Canon Inc 試料の分離装置及び分離方法
FR2817395B1 (fr) 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2818010B1 (fr) 2000-12-08 2003-09-05 Commissariat Energie Atomique Procede de realisation d'une couche mince impliquant l'introduction d'especes gazeuses
FR2819099B1 (fr) * 2000-12-28 2003-09-26 Commissariat Energie Atomique Procede de realisation d'une structure empilee
JP4803884B2 (ja) * 2001-01-31 2011-10-26 キヤノン株式会社 薄膜半導体装置の製造方法
JP2002305293A (ja) 2001-04-06 2002-10-18 Canon Inc 半導体部材の製造方法及び半導体装置の製造方法
US6770966B2 (en) * 2001-07-31 2004-08-03 Intel Corporation Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat
TW558743B (en) * 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
FR2834380B1 (fr) * 2002-01-03 2005-02-18 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
FR2847714B1 (fr) * 2002-11-27 2005-02-18 Soitec Silicon On Insulator Procede et dispositif de recuit de tranche de semiconducteur
TWI233154B (en) 2002-12-06 2005-05-21 Soitec Silicon On Insulator Method for recycling a substrate
EP1427002B1 (fr) * 2002-12-06 2017-04-12 Soitec Méthode de recyclage d'un substrat par découpage localisé
JP4151421B2 (ja) * 2003-01-23 2008-09-17 セイコーエプソン株式会社 デバイスの製造方法
JP2005039114A (ja) * 2003-07-17 2005-02-10 Disco Abrasive Syst Ltd 半導体ウェーハ移し替え装置
WO2005091283A1 (fr) * 2004-03-22 2005-09-29 Oc Oerlikon Balzers Ag Procede et appareil de separation de substrats en forme de disques
DE102004041378B4 (de) 2004-08-26 2010-07-08 Siltronic Ag Halbleiterscheibe mit Schichtstruktur mit geringem Warp und Bow sowie Verfahren zu ihrer Herstellung
DE102005000826A1 (de) 2005-01-05 2006-07-20 Siltronic Ag Halbleiterscheibe mit Silicium-Germanium-Schicht und Verfahren zu deren Herstellung
EP1894234B1 (fr) 2005-02-28 2021-11-03 Silicon Genesis Corporation Procédé de rigidification du substrat et système pour un transfert de couche.
JP5064692B2 (ja) * 2006-02-09 2012-10-31 信越化学工業株式会社 Ｓｏｉ基板の製造方法
JP5064693B2 (ja) * 2006-02-13 2012-10-31 信越化学工業株式会社 Ｓｏｉ基板の製造方法
US8293619B2 (en) * 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
JP2008112847A (ja) * 2006-10-30 2008-05-15 Shin Etsu Chem Co Ltd 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池
JP5284576B2 (ja) * 2006-11-10 2013-09-11 信越化学工業株式会社 半導体基板の製造方法
JP5166745B2 (ja) * 2007-03-07 2013-03-21 信越化学工業株式会社 単結晶シリコン太陽電池の製造方法
US20100193900A1 (en) * 2007-07-13 2010-08-05 National University Corporation Tohoku University Soi substrate and semiconductor device using an soi substrate
JP2010021398A (ja) * 2008-07-11 2010-01-28 Disco Abrasive Syst Ltd ウェーハの処理方法
US7994064B2 (en) * 2009-06-15 2011-08-09 Twin Creeks Technologies, Inc. Selective etch for damage at exfoliated surface
JP5725430B2 (ja) * 2011-10-18 2015-05-27 富士電機株式会社 固相接合ウエハの支持基板の剥離方法および半導体装置の製造方法
FR2995447B1 (fr) * 2012-09-07 2014-09-05 Soitec Silicon On Insulator Procede de separation d'au moins deux substrats selon une interface choisie
JP2014138189A (ja) * 2013-01-16 2014-07-28 Silicon Genesis Corp 制御されたプロセス及び結果として生じるデバイス
CN103077885B (zh) * 2013-01-31 2016-06-01 上海新傲科技股份有限公司 受控减薄方法以及半导体衬底
JP6213046B2 (ja) * 2013-08-21 2017-10-18 信越半導体株式会社 貼り合わせウェーハの製造方法
FR3032555B1 (fr) * 2015-02-10 2018-01-19 Soitec Procede de report d'une couche utile
CN104979262B (zh) * 2015-05-14 2020-09-22 浙江中纳晶微电子科技有限公司 一种晶圆分离的方法
CN106529159A (zh) * 2016-10-28 2017-03-22 山东理工大学 压电控制单原子链纳米弦横向振动固有角频率计算方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466852A (en) * 1983-10-27 1984-08-21 At&T Technologies, Inc. Method and apparatus for demounting wafers
EP0397237A1 (fr) * 1989-05-08 1990-11-14 Koninklijke Philips Electronics N.V. Procédé pour fendre une plaque en matériau fragile
US5213451A (en) * 1991-01-10 1993-05-25 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Apparatus and method of automatically separating stacked wafers
EP0703609A1 (fr) * 1994-09-22 1996-03-27 Commissariat A L'energie Atomique Procédé de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
EP0793263A2 (fr) * 1996-02-28 1997-09-03 Canon Kabushiki Kaisha Procédé pour fabriquer un substrat semi-conducteur
EP0843344A1 (fr) * 1996-11-15 1998-05-20 Canon Kabushiki Kaisha Procédé de transfert d'une couche semiconductrice par l'utilisation de la technologie silicium sur isolant (SOI)
EP0867921A2 (fr) * 1997-03-26 1998-09-30 Canon Kabushiki Kaisha Substrat et procédé de fabrication

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DE3803424C2 (de) * 1988-02-05 1995-05-18 Gsf Forschungszentrum Umwelt Verfahren zur quantitativen, tiefendifferentiellen Analyse fester Proben
JPH04359518A (ja) * 1991-06-06 1992-12-11 Nec Corp 半導体装置の製造方法
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
EP0536790B1 (fr) * 1991-10-11 2004-03-03 Canon Kabushiki Kaisha Procédé pour fabriquer des produits semi-conducteurs
US5269880A (en) * 1992-04-03 1993-12-14 Northern Telecom Limited Tapering sidewalls of via holes
FR2715503B1 (fr) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Substrat pour composants intégrés comportant une couche mince et son procédé de réalisation.
JP3257580B2 (ja) * 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
JP3667079B2 (ja) * 1997-03-26 2005-07-06 キヤノン株式会社 薄膜の形成方法
JP2877800B2 (ja) * 1997-03-27 1999-03-31 キヤノン株式会社 複合部材の分離方法、分離された部材、分離装置、半導体基体の作製方法および半導体基体

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466852A (en) * 1983-10-27 1984-08-21 At&T Technologies, Inc. Method and apparatus for demounting wafers
EP0397237A1 (fr) * 1989-05-08 1990-11-14 Koninklijke Philips Electronics N.V. Procédé pour fendre une plaque en matériau fragile
US5213451A (en) * 1991-01-10 1993-05-25 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Apparatus and method of automatically separating stacked wafers
EP0703609A1 (fr) * 1994-09-22 1996-03-27 Commissariat A L'energie Atomique Procédé de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
EP0793263A2 (fr) * 1996-02-28 1997-09-03 Canon Kabushiki Kaisha Procédé pour fabriquer un substrat semi-conducteur
EP0843344A1 (fr) * 1996-11-15 1998-05-20 Canon Kabushiki Kaisha Procédé de transfert d'une couche semiconductrice par l'utilisation de la technologie silicium sur isolant (SOI)
EP0867921A2 (fr) * 1997-03-26 1998-09-30 Canon Kabushiki Kaisha Substrat et procédé de fabrication

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LU X ET AL: "SOI MATERIAL TECHNOLOGY USING PLASMA IMMERSION ION IMPLANTATION", PROCEEDINGS OF THE ANNUAL SOS/SOI TECHNOLOGY CONFERENCE. (FROM 1991 PROCEEDINGS OF THE INTERNATIONAL SOI CONFERENCE.) SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES,US,NEW YORK, NY: IEEE, 1996, pages 48 - 49, XP000736841, ISBN: 0-7803-3316-0 *
See also references of WO9852216A1 *

Also Published As

Publication number Publication date
AU7685198A (en) 1998-12-08
CA2290104A1 (fr) 1998-11-19
CN1146973C (zh) 2004-04-21
CN1255237A (zh) 2000-05-31
WO1998052216A1 (fr) 1998-11-19
EP0995227A1 (fr) 2000-04-26
JP2001525991A (ja) 2001-12-11

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