CN114649442A - 太阳能电池的制造方法 - Google Patents
太阳能电池的制造方法 Download PDFInfo
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- CN114649442A CN114649442A CN202111553303.2A CN202111553303A CN114649442A CN 114649442 A CN114649442 A CN 114649442A CN 202111553303 A CN202111553303 A CN 202111553303A CN 114649442 A CN114649442 A CN 114649442A
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- semiconductor layer
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- 238000000034 method Methods 0.000 title claims abstract description 196
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 189
- 239000004065 semiconductor Substances 0.000 claims abstract description 860
- 230000003647 oxidation Effects 0.000 claims abstract description 225
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 225
- 239000000463 material Substances 0.000 claims abstract description 221
- 239000000758 substrate Substances 0.000 claims abstract description 215
- 238000004140 cleaning Methods 0.000 claims abstract description 62
- 238000000059 patterning Methods 0.000 claims abstract description 55
- 239000010410 layer Substances 0.000 claims description 1174
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 113
- 239000011241 protective layer Substances 0.000 claims description 81
- 230000015572 biosynthetic process Effects 0.000 claims description 50
- 239000003513 alkali Substances 0.000 claims description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000010306 acid treatment Methods 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000007772 electrode material Substances 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 abstract description 10
- 238000006731 degradation reaction Methods 0.000 abstract description 10
- 230000001590 oxidative effect Effects 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 86
- 238000010586 diagram Methods 0.000 description 79
- 229920002120 photoresistant polymer Polymers 0.000 description 50
- 238000005530 etching Methods 0.000 description 40
- 239000012670 alkaline solution Substances 0.000 description 30
- 230000004048 modification Effects 0.000 description 30
- 238000012986 modification Methods 0.000 description 30
- 238000005229 chemical vapour deposition Methods 0.000 description 24
- 230000003287 optical effect Effects 0.000 description 24
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- 239000003929 acidic solution Substances 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000011259 mixed solution Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- 238000010030 laminating Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 239000002210 silicon-based material Substances 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020210725A JP7506593B2 (ja) | 2020-12-18 | 2020-12-18 | 太陽電池の製造方法 |
| JP2020-210725 | 2020-12-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114649442A true CN114649442A (zh) | 2022-06-21 |
Family
ID=81992472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111553303.2A Pending CN114649442A (zh) | 2020-12-18 | 2021-12-17 | 太阳能电池的制造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7506593B2 (ja) |
| CN (1) | CN114649442A (ja) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6346449B1 (en) * | 1999-05-17 | 2002-02-12 | Taiwan Semiconductor Manufacturing Company | Non-distort spacer profile during subsequent processing |
| US20050124160A1 (en) * | 2003-12-05 | 2005-06-09 | Taiwan Semiconductor Manufacturing Co. | Novel multi-gate formation procedure for gate oxide quality improvement |
| JP2014075526A (ja) * | 2012-10-05 | 2014-04-24 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
| JP2015122347A (ja) * | 2013-12-20 | 2015-07-02 | 三菱電機株式会社 | 太陽電池およびその製造方法、太陽電池モジュール |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137455B (zh) | 2011-11-29 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | 拥有低压逻辑器件和高压器件的芯片制造方法 |
| JP2014053459A (ja) | 2012-09-07 | 2014-03-20 | Sharp Corp | 光電変換素子の製造方法 |
| JP6185304B2 (ja) | 2013-06-28 | 2017-08-23 | 株式会社カネカ | 結晶シリコン系光電変換装置およびその製造方法 |
| JP2015177175A (ja) | 2014-03-18 | 2015-10-05 | シャープ株式会社 | 光電変換素子および光電変換素子の製造方法 |
| WO2015178305A1 (ja) | 2014-05-23 | 2015-11-26 | シャープ株式会社 | 光電変換素子及びその製造方法 |
| JP2016167507A (ja) | 2015-03-09 | 2016-09-15 | シャープ株式会社 | 光電変換素子およびその製造方法 |
| JP7274899B2 (ja) | 2019-03-22 | 2023-05-17 | 株式会社カネカ | 太陽電池の製造方法 |
-
2020
- 2020-12-18 JP JP2020210725A patent/JP7506593B2/ja active Active
-
2021
- 2021-12-17 CN CN202111553303.2A patent/CN114649442A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6346449B1 (en) * | 1999-05-17 | 2002-02-12 | Taiwan Semiconductor Manufacturing Company | Non-distort spacer profile during subsequent processing |
| US20050124160A1 (en) * | 2003-12-05 | 2005-06-09 | Taiwan Semiconductor Manufacturing Co. | Novel multi-gate formation procedure for gate oxide quality improvement |
| JP2014075526A (ja) * | 2012-10-05 | 2014-04-24 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
| JP2015122347A (ja) * | 2013-12-20 | 2015-07-02 | 三菱電機株式会社 | 太陽電池およびその製造方法、太陽電池モジュール |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7506593B2 (ja) | 2024-06-26 |
| JP2022097253A (ja) | 2022-06-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220621 |