CN114641850B - 分散剂和研磨剂组合物 - Google Patents
分散剂和研磨剂组合物Info
- Publication number
- CN114641850B CN114641850B CN202080069040.5A CN202080069040A CN114641850B CN 114641850 B CN114641850 B CN 114641850B CN 202080069040 A CN202080069040 A CN 202080069040A CN 114641850 B CN114641850 B CN 114641850B
- Authority
- CN
- China
- Prior art keywords
- polymer block
- meth
- polymer
- structural unit
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K23/00—Use of substances as emulsifying, wetting, dispersing, or foam-producing agents
- C09K23/52—Natural or synthetic resins or their salts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
- C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K23/00—Use of substances as emulsifying, wetting, dispersing, or foam-producing agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K23/00—Use of substances as emulsifying, wetting, dispersing, or foam-producing agents
- C09K23/22—Amides or hydrazides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/04—Acids; Metal salts or ammonium salts thereof
- C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2438/00—Living radical polymerisation
- C08F2438/03—Use of a di- or tri-thiocarbonylthio compound, e.g. di- or tri-thioester, di- or tri-thiocarbamate, or a xanthate as chain transfer agent, e.g . Reversible Addition Fragmentation chain Transfer [RAFT] or Macromolecular Design via Interchange of Xanthates [MADIX]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1472—Non-aqueous liquid suspensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Graft Or Block Polymers (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-239688 | 2019-12-27 | ||
| JP2019239689 | 2019-12-27 | ||
| JP2019239687 | 2019-12-27 | ||
| JP2019-239689 | 2019-12-27 | ||
| JP2019239688 | 2019-12-27 | ||
| JP2019-239687 | 2019-12-27 | ||
| PCT/JP2020/036577 WO2021131198A1 (ja) | 2019-12-27 | 2020-09-28 | 分散剤及び研磨剤組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114641850A CN114641850A (zh) | 2022-06-17 |
| CN114641850B true CN114641850B (zh) | 2026-03-31 |
Family
ID=76575317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080069040.5A Active CN114641850B (zh) | 2019-12-27 | 2020-09-28 | 分散剂和研磨剂组合物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12577431B2 (https=) |
| JP (1) | JP7255711B2 (https=) |
| KR (1) | KR102827839B1 (https=) |
| CN (1) | CN114641850B (https=) |
| TW (1) | TWI781455B (https=) |
| WO (1) | WO2021131198A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102358134B1 (ko) * | 2021-07-08 | 2022-02-08 | 영창케미칼 주식회사 | 표면 결함수 및 헤이즈 저감용 실리콘 웨이퍼 최종 연마용 슬러리 조성물 및 그를 이용한 최종 연마 방법 |
| US20240392163A1 (en) * | 2021-11-15 | 2024-11-28 | Toagosei Co., Ltd. | Additive for chemical mechanical polishing, method for producing the same, and polishing liquid composition |
| JP7815701B2 (ja) * | 2021-11-15 | 2026-02-18 | 東亞合成株式会社 | 化学機械研磨用の添加剤及びその製造方法、並びに、研磨液組成物 |
| US12534560B2 (en) * | 2021-11-29 | 2026-01-27 | Saudi Arabian Oil Company | Copolymers of (3-acrylamidopropyl)trimethyl ammonium chloride as corrosion inhibitor intermediate |
| WO2024007310A1 (zh) * | 2022-07-08 | 2024-01-11 | 宁德时代新能源科技股份有限公司 | 分散剂及其制备方法、浆料组合物及其制备方法、电极极片和包括该电极极片的装置 |
| JPWO2024142722A1 (https=) * | 2022-12-27 | 2024-07-04 | ||
| WO2024203343A1 (ja) * | 2023-03-24 | 2024-10-03 | トウアゴウセイ・タイランド・カンパニー・リミテッド | (メタ)アクリル酸系共重合体及びその製造方法、水処理剤並びにスケール付着防止剤 |
| CN116640516B (zh) * | 2023-05-18 | 2025-07-15 | 万华化学集团电子材料有限公司 | 一种减少eoe现象的钨化学机械抛光液及其应用 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102165564A (zh) * | 2008-09-26 | 2011-08-24 | 罗地亚管理公司 | 用于化学机械抛光的磨料组合物及其使用方法 |
| CN106471090A (zh) * | 2014-07-09 | 2017-03-01 | 日立化成株式会社 | Cmp用研磨液和研磨方法 |
| CN107267118A (zh) * | 2016-03-31 | 2017-10-20 | 弗萨姆材料美国有限责任公司 | 复合颗粒、其精制方法及用途 |
| WO2019177802A1 (en) * | 2018-03-14 | 2019-09-19 | Cabot Microelectronics Corporation | Cmp compositions for sti applications |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006303348A (ja) * | 2005-04-25 | 2006-11-02 | Asahi Glass Co Ltd | 化学的機械的研磨用研磨剤、研磨方法および半導体集積回路装置の製造方法 |
| JP2009070908A (ja) * | 2007-09-11 | 2009-04-02 | Mitsui Chemicals Inc | 研磨用スラリー |
| KR101970858B1 (ko) * | 2012-03-14 | 2019-04-19 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 반도체 기판의 제조 방법 |
| JP2012140637A (ja) * | 2012-04-12 | 2012-07-26 | Toyota Motor Corp | 水分散スラリー塗料およびこれを用いた塗膜 |
| CN105073941B (zh) * | 2013-02-21 | 2018-01-30 | 福吉米株式会社 | 研磨用组合物及研磨物制造方法 |
| US20150005466A1 (en) * | 2013-07-01 | 2015-01-01 | E I Du Pont De Nemours And Company | Ab block copolymer dispersants having an ink vehicle soluble block |
| JP2015151509A (ja) * | 2014-02-18 | 2015-08-24 | 第一工業製薬株式会社 | 化学機械研磨用研磨剤 |
| JP6405776B2 (ja) | 2014-08-07 | 2018-10-17 | 日立化成株式会社 | タングステン用研磨剤、研磨剤用貯蔵液及び研磨方法 |
| JP6628023B2 (ja) * | 2015-07-01 | 2020-01-08 | 東亞合成株式会社 | 研磨液組成物用水溶性重合体の製造方法 |
| KR20170017177A (ko) | 2015-08-05 | 2017-02-15 | 주식회사 케이알파트너스 | 결제 중계 서버 및 그의 서비스 제공 방법 |
| US20200010727A1 (en) * | 2017-02-20 | 2020-01-09 | Fujimi Incorporated | Intermediate polishing composition for silicon substrate and polishing composition set for silicon substrate |
| JP7157733B2 (ja) * | 2017-03-28 | 2022-10-20 | 日本製紙株式会社 | 分散樹脂組成物 |
| JP2018176035A (ja) * | 2017-04-06 | 2018-11-15 | 大日本印刷株式会社 | 高分子分散剤、色材分散液、着色樹脂組成物、カラーフィルタ、液晶表示装置、及び発光表示装置 |
| US11043151B2 (en) * | 2017-10-03 | 2021-06-22 | Cmc Materials, Inc. | Surface treated abrasive particles for tungsten buff applications |
| JP7187770B2 (ja) * | 2017-11-08 | 2022-12-13 | Agc株式会社 | 研磨剤と研磨方法、および研磨用添加液 |
| CN111971342A (zh) * | 2018-04-27 | 2020-11-20 | 东亚合成株式会社 | 固化性树脂组合物、以及嵌段共聚物及其制造方法 |
-
2020
- 2020-09-28 KR KR1020227016045A patent/KR102827839B1/ko active Active
- 2020-09-28 JP JP2021566824A patent/JP7255711B2/ja active Active
- 2020-09-28 CN CN202080069040.5A patent/CN114641850B/zh active Active
- 2020-09-28 WO PCT/JP2020/036577 patent/WO2021131198A1/ja not_active Ceased
- 2020-10-06 TW TW109134626A patent/TWI781455B/zh active
-
2022
- 2022-06-01 US US17/830,285 patent/US12577431B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102165564A (zh) * | 2008-09-26 | 2011-08-24 | 罗地亚管理公司 | 用于化学机械抛光的磨料组合物及其使用方法 |
| CN106471090A (zh) * | 2014-07-09 | 2017-03-01 | 日立化成株式会社 | Cmp用研磨液和研磨方法 |
| CN107267118A (zh) * | 2016-03-31 | 2017-10-20 | 弗萨姆材料美国有限责任公司 | 复合颗粒、其精制方法及用途 |
| WO2019177802A1 (en) * | 2018-03-14 | 2019-09-19 | Cabot Microelectronics Corporation | Cmp compositions for sti applications |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI781455B (zh) | 2022-10-21 |
| CN114641850A (zh) | 2022-06-17 |
| WO2021131198A1 (ja) | 2021-07-01 |
| JP7255711B2 (ja) | 2023-04-11 |
| JPWO2021131198A1 (https=) | 2021-07-01 |
| TW202124039A (zh) | 2021-07-01 |
| US12577431B2 (en) | 2026-03-17 |
| KR20220121779A (ko) | 2022-09-01 |
| US20220290008A1 (en) | 2022-09-15 |
| KR102827839B1 (ko) | 2025-06-30 |
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Legal Events
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |