KR102827839B1 - 분산제 및 연마제 조성물 (dispersant and polishing agent composition) - Google Patents

분산제 및 연마제 조성물 (dispersant and polishing agent composition) Download PDF

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KR102827839B1
KR102827839B1 KR1020227016045A KR20227016045A KR102827839B1 KR 102827839 B1 KR102827839 B1 KR 102827839B1 KR 1020227016045 A KR1020227016045 A KR 1020227016045A KR 20227016045 A KR20227016045 A KR 20227016045A KR 102827839 B1 KR102827839 B1 KR 102827839B1
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polymer block
group
structural unit
polymer
block
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KR20220121779A (ko
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아키히로 고토
사치코 이무라
슌 나카노
šœ 나카노
류타로 츠보우치
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도아고세이가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K23/00—Use of substances as emulsifying, wetting, dispersing, or foam-producing agents
    • C09K23/52—Natural or synthetic resins or their salts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K23/00—Use of substances as emulsifying, wetting, dispersing, or foam-producing agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K23/00—Use of substances as emulsifying, wetting, dispersing, or foam-producing agents
    • C09K23/22—Amides or hydrazides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H01L21/30625—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2438/00—Living radical polymerisation
    • C08F2438/03—Use of a di- or tri-thiocarbonylthio compound, e.g. di- or tri-thioester, di- or tri-thiocarbamate, or a xanthate as chain transfer agent, e.g . Reversible Addition Fragmentation chain Transfer [RAFT] or Macromolecular Design via Interchange of Xanthates [MADIX]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Graft Or Block Polymers (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
KR1020227016045A 2019-12-27 2020-09-28 분산제 및 연마제 조성물 (dispersant and polishing agent composition) Active KR102827839B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPJP-P-2019-239687 2019-12-27
JPJP-P-2019-239688 2019-12-27
JP2019239689 2019-12-27
JP2019239687 2019-12-27
JP2019239688 2019-12-27
JPJP-P-2019-239689 2019-12-27
PCT/JP2020/036577 WO2021131198A1 (ja) 2019-12-27 2020-09-28 分散剤及び研磨剤組成物

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KR20220121779A KR20220121779A (ko) 2022-09-01
KR102827839B1 true KR102827839B1 (ko) 2025-06-30

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US (1) US12577431B2 (https=)
JP (1) JP7255711B2 (https=)
KR (1) KR102827839B1 (https=)
CN (1) CN114641850B (https=)
TW (1) TWI781455B (https=)
WO (1) WO2021131198A1 (https=)

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KR102358134B1 (ko) * 2021-07-08 2022-02-08 영창케미칼 주식회사 표면 결함수 및 헤이즈 저감용 실리콘 웨이퍼 최종 연마용 슬러리 조성물 및 그를 이용한 최종 연마 방법
US20240392163A1 (en) * 2021-11-15 2024-11-28 Toagosei Co., Ltd. Additive for chemical mechanical polishing, method for producing the same, and polishing liquid composition
JP7815701B2 (ja) * 2021-11-15 2026-02-18 東亞合成株式会社 化学機械研磨用の添加剤及びその製造方法、並びに、研磨液組成物
US12534560B2 (en) * 2021-11-29 2026-01-27 Saudi Arabian Oil Company Copolymers of (3-acrylamidopropyl)trimethyl ammonium chloride as corrosion inhibitor intermediate
WO2024007310A1 (zh) * 2022-07-08 2024-01-11 宁德时代新能源科技股份有限公司 分散剂及其制备方法、浆料组合物及其制备方法、电极极片和包括该电极极片的装置
JPWO2024142722A1 (https=) * 2022-12-27 2024-07-04
WO2024203343A1 (ja) * 2023-03-24 2024-10-03 トウアゴウセイ・タイランド・カンパニー・リミテッド （メタ）アクリル酸系共重合体及びその製造方法、水処理剤並びにスケール付着防止剤
CN116640516B (zh) * 2023-05-18 2025-07-15 万华化学集团电子材料有限公司 一种减少eoe现象的钨化学机械抛光液及其应用

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JP2009070908A (ja) 2007-09-11 2009-04-02 Mitsui Chemicals Inc 研磨用スラリー
JP2015151509A (ja) 2014-02-18 2015-08-24 第一工業製薬株式会社 化学機械研磨用研磨剤
WO2019208386A1 (ja) 2018-04-27 2019-10-31 東亞合成株式会社 硬化性樹脂組成物、並びに、ブロック共重合体及びその製造方法

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TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
KR101970858B1 (ko) * 2012-03-14 2019-04-19 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 반도체 기판의 제조 방법
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JP2009070908A (ja) 2007-09-11 2009-04-02 Mitsui Chemicals Inc 研磨用スラリー
JP2015151509A (ja) 2014-02-18 2015-08-24 第一工業製薬株式会社 化学機械研磨用研磨剤
WO2019208386A1 (ja) 2018-04-27 2019-10-31 東亞合成株式会社 硬化性樹脂組成物、並びに、ブロック共重合体及びその製造方法

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TWI781455B (zh) 2022-10-21
CN114641850A (zh) 2022-06-17
WO2021131198A1 (ja) 2021-07-01
JP7255711B2 (ja) 2023-04-11
CN114641850B (zh) 2026-03-31
JPWO2021131198A1 (https=) 2021-07-01
TW202124039A (zh) 2021-07-01
US12577431B2 (en) 2026-03-17
KR20220121779A (ko) 2022-09-01
US20220290008A1 (en) 2022-09-15

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