CN114600242B - 半导体集成电路装置 - Google Patents

半导体集成电路装置

Info

Publication number
CN114600242B
CN114600242B CN202080074126.7A CN202080074126A CN114600242B CN 114600242 B CN114600242 B CN 114600242B CN 202080074126 A CN202080074126 A CN 202080074126A CN 114600242 B CN114600242 B CN 114600242B
Authority
CN
China
Prior art keywords
resistor
output
esd protection
tap
output transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080074126.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN114600242A (zh
Inventor
田中英俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Socionext Inc
Original Assignee
Socionext Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Socionext Inc filed Critical Socionext Inc
Publication of CN114600242A publication Critical patent/CN114600242A/zh
Application granted granted Critical
Publication of CN114600242B publication Critical patent/CN114600242B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202080074126.7A 2019-11-06 2020-10-21 半导体集成电路装置 Active CN114600242B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019201491 2019-11-06
JP2019-201491 2019-11-06
PCT/JP2020/039593 WO2021090688A1 (ja) 2019-11-06 2020-10-21 半導体集積回路装置

Publications (2)

Publication Number Publication Date
CN114600242A CN114600242A (zh) 2022-06-07
CN114600242B true CN114600242B (zh) 2025-08-29

Family

ID=75848200

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080074126.7A Active CN114600242B (zh) 2019-11-06 2020-10-21 半导体集成电路装置

Country Status (4)

Country Link
US (1) US11824055B2 (https=)
JP (1) JP7610129B2 (https=)
CN (1) CN114600242B (https=)
WO (1) WO2021090688A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7610129B2 (ja) * 2019-11-06 2025-01-08 株式会社ソシオネクスト 半導体集積回路装置
WO2024029040A1 (ja) * 2022-08-04 2024-02-08 株式会社ソシオネクスト 半導体集積回路装置
WO2024047820A1 (ja) * 2022-08-31 2024-03-07 株式会社ソシオネクスト 半導体集積回路装置
CN119650552A (zh) * 2023-09-18 2025-03-18 联华电子股份有限公司 静电防护环结构及其制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014064044A (ja) * 2014-01-07 2014-04-10 Renesas Electronics Corp 半導体集積回路装置

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KR100307554B1 (ko) * 1998-06-30 2001-11-15 박종섭 Esd 소자를 구비하는 반도체장치
DE10139956A1 (de) * 2001-08-21 2003-03-13 Koninkl Philips Electronics Nv ESD Schutz für CMOS-Ausgangsstufe
US20050179088A1 (en) * 2004-02-17 2005-08-18 Infineon Technologies Ag ESD protective apparatus for a semiconductor circuit having an ESD protective circuit which makes contact with a substrate or guard ring contact
JP2007234718A (ja) * 2006-02-28 2007-09-13 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US7564666B2 (en) * 2006-05-02 2009-07-21 Semiconductor Components Industries, L.L.C. Shunt protection circuit and method therefor
US7538997B2 (en) * 2006-05-31 2009-05-26 Alpha & Omega Semiconductor, Ltd. Circuit configurations to reduce snapback of a transient voltage suppressor
JP2010147282A (ja) 2008-12-19 2010-07-01 Renesas Technology Corp 半導体集積回路装置
US8228651B2 (en) * 2009-07-31 2012-07-24 Hynix Semiconductor Inc. ESD protection circuit
JP2011096897A (ja) * 2009-10-30 2011-05-12 Renesas Electronics Corp 半導体装置及び電子機器
US9087719B2 (en) * 2012-09-28 2015-07-21 Intel Corporation Extended drain non-planar MOSFETs for electrostatic discharge (ESD) protection
US9013844B2 (en) * 2013-01-15 2015-04-21 Xilinx, Inc. Circuit for and method of enabling the discharge of electric charge in an integrated circuit
JP6243720B2 (ja) * 2013-02-06 2017-12-06 エスアイアイ・セミコンダクタ株式会社 Ｅｓｄ保護回路を備えた半導体装置
US9054521B2 (en) * 2013-06-25 2015-06-09 Hong Kong Applied Science & Technology Research Institute Company, Ltd. Electro-static-discharge (ESD) protection structure with stacked implant junction transistor and parallel resistor and diode paths to lower trigger voltage and raise holding volatge
US8958189B1 (en) * 2013-08-09 2015-02-17 Infineon Technologies Austria Ag High-voltage semiconductor switch and method for switching high voltages
JP6308925B2 (ja) 2014-09-29 2018-04-11 ルネサスエレクトロニクス株式会社 半導体装置
CN107112281B (zh) * 2015-01-08 2020-11-10 松下半导体解决方案株式会社 半导体装置以及其设计方法
US9871029B2 (en) * 2016-05-06 2018-01-16 Analog Devices Global Bus driver / line driver
JP6841161B2 (ja) * 2017-05-25 2021-03-10 株式会社ソシオネクスト 半導体装置
WO2019043888A1 (ja) * 2017-08-31 2019-03-07 株式会社ソシオネクスト 半導体集積回路装置
US11037921B2 (en) * 2019-10-15 2021-06-15 Nanya Technology Corporation Off chip driver structure
JP7610129B2 (ja) * 2019-11-06 2025-01-08 株式会社ソシオネクスト 半導体集積回路装置
JP7342742B2 (ja) * 2020-03-11 2023-09-12 三菱電機株式会社 半導体装置
US20210408786A1 (en) * 2020-06-30 2021-12-30 Qualcomm Incorporated Circuit techniques for enhanced electrostatic discharge (esd) robustness
JP2022163499A (ja) * 2021-04-14 2022-10-26 ローム株式会社 半導体装置
CN115241855B (zh) * 2021-04-23 2025-09-23 澜起科技股份有限公司 基于串联端接匹配的驱动输出电路、芯片及驱动输出方法

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Publication number Priority date Publication date Assignee Title
JP2014064044A (ja) * 2014-01-07 2014-04-10 Renesas Electronics Corp 半導体集積回路装置

Also Published As

Publication number Publication date
US20220262787A1 (en) 2022-08-18
JPWO2021090688A1 (https=) 2021-05-14
US11824055B2 (en) 2023-11-21
CN114600242A (zh) 2022-06-07
JP7610129B2 (ja) 2025-01-08
WO2021090688A1 (ja) 2021-05-14

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