JP7610129B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP7610129B2
JP7610129B2 JP2021554875A JP2021554875A JP7610129B2 JP 7610129 B2 JP7610129 B2 JP 7610129B2 JP 2021554875 A JP2021554875 A JP 2021554875A JP 2021554875 A JP2021554875 A JP 2021554875A JP 7610129 B2 JP7610129 B2 JP 7610129B2
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Prior art keywords
esd protection
tap
output
semiconductor integrated
integrated circuit
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JP2021554875A
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Japanese (ja)
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JPWO2021090688A1 (https=
JPWO2021090688A5 (https=
Inventor
英俊 田中
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Socionext Inc
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Socionext Inc
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Publication of JPWO2021090688A5 publication Critical patent/JPWO2021090688A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2021554875A 2019-11-06 2020-10-21 半導体集積回路装置 Active JP7610129B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019201491 2019-11-06
JP2019201491 2019-11-06
PCT/JP2020/039593 WO2021090688A1 (ja) 2019-11-06 2020-10-21 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JPWO2021090688A1 JPWO2021090688A1 (https=) 2021-05-14
JPWO2021090688A5 JPWO2021090688A5 (https=) 2022-07-07
JP7610129B2 true JP7610129B2 (ja) 2025-01-08

Family

ID=75848200

Family Applications (1)

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JP2021554875A Active JP7610129B2 (ja) 2019-11-06 2020-10-21 半導体集積回路装置

Country Status (4)

Country Link
US (1) US11824055B2 (https=)
JP (1) JP7610129B2 (https=)
CN (1) CN114600242B (https=)
WO (1) WO2021090688A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7610129B2 (ja) * 2019-11-06 2025-01-08 株式会社ソシオネクスト 半導体集積回路装置
WO2024029040A1 (ja) * 2022-08-04 2024-02-08 株式会社ソシオネクスト 半導体集積回路装置
WO2024047820A1 (ja) * 2022-08-31 2024-03-07 株式会社ソシオネクスト 半導体集積回路装置
CN119650552A (zh) * 2023-09-18 2025-03-18 联华电子股份有限公司 静电防护环结构及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010147282A (ja) 2008-12-19 2010-07-01 Renesas Technology Corp 半導体集積回路装置
JP2014064044A (ja) 2014-01-07 2014-04-10 Renesas Electronics Corp 半導体集積回路装置
JP2016072349A (ja) 2014-09-29 2016-05-09 ルネサスエレクトロニクス株式会社 半導体装置
WO2019043888A1 (ja) 2017-08-31 2019-03-07 株式会社ソシオネクスト 半導体集積回路装置

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KR100307554B1 (ko) * 1998-06-30 2001-11-15 박종섭 Esd 소자를 구비하는 반도체장치
DE10139956A1 (de) * 2001-08-21 2003-03-13 Koninkl Philips Electronics Nv ESD Schutz für CMOS-Ausgangsstufe
US20050179088A1 (en) * 2004-02-17 2005-08-18 Infineon Technologies Ag ESD protective apparatus for a semiconductor circuit having an ESD protective circuit which makes contact with a substrate or guard ring contact
JP2007234718A (ja) * 2006-02-28 2007-09-13 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US7564666B2 (en) * 2006-05-02 2009-07-21 Semiconductor Components Industries, L.L.C. Shunt protection circuit and method therefor
US7538997B2 (en) * 2006-05-31 2009-05-26 Alpha & Omega Semiconductor, Ltd. Circuit configurations to reduce snapback of a transient voltage suppressor
US8228651B2 (en) * 2009-07-31 2012-07-24 Hynix Semiconductor Inc. ESD protection circuit
JP2011096897A (ja) * 2009-10-30 2011-05-12 Renesas Electronics Corp 半導体装置及び電子機器
US9087719B2 (en) * 2012-09-28 2015-07-21 Intel Corporation Extended drain non-planar MOSFETs for electrostatic discharge (ESD) protection
US9013844B2 (en) * 2013-01-15 2015-04-21 Xilinx, Inc. Circuit for and method of enabling the discharge of electric charge in an integrated circuit
JP6243720B2 (ja) * 2013-02-06 2017-12-06 エスアイアイ・セミコンダクタ株式会社 Ｅｓｄ保護回路を備えた半導体装置
US9054521B2 (en) * 2013-06-25 2015-06-09 Hong Kong Applied Science & Technology Research Institute Company, Ltd. Electro-static-discharge (ESD) protection structure with stacked implant junction transistor and parallel resistor and diode paths to lower trigger voltage and raise holding volatge
US8958189B1 (en) * 2013-08-09 2015-02-17 Infineon Technologies Austria Ag High-voltage semiconductor switch and method for switching high voltages
CN107112281B (zh) * 2015-01-08 2020-11-10 松下半导体解决方案株式会社 半导体装置以及其设计方法
US9871029B2 (en) * 2016-05-06 2018-01-16 Analog Devices Global Bus driver / line driver
JP6841161B2 (ja) * 2017-05-25 2021-03-10 株式会社ソシオネクスト 半導体装置
US11037921B2 (en) * 2019-10-15 2021-06-15 Nanya Technology Corporation Off chip driver structure
JP7610129B2 (ja) * 2019-11-06 2025-01-08 株式会社ソシオネクスト 半導体集積回路装置
JP7342742B2 (ja) * 2020-03-11 2023-09-12 三菱電機株式会社 半導体装置
US20210408786A1 (en) * 2020-06-30 2021-12-30 Qualcomm Incorporated Circuit techniques for enhanced electrostatic discharge (esd) robustness
JP2022163499A (ja) * 2021-04-14 2022-10-26 ローム株式会社 半導体装置
CN115241855B (zh) * 2021-04-23 2025-09-23 澜起科技股份有限公司 基于串联端接匹配的驱动输出电路、芯片及驱动输出方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010147282A (ja) 2008-12-19 2010-07-01 Renesas Technology Corp 半導体集積回路装置
JP2014064044A (ja) 2014-01-07 2014-04-10 Renesas Electronics Corp 半導体集積回路装置
JP2016072349A (ja) 2014-09-29 2016-05-09 ルネサスエレクトロニクス株式会社 半導体装置
WO2019043888A1 (ja) 2017-08-31 2019-03-07 株式会社ソシオネクスト 半導体集積回路装置

Also Published As

Publication number Publication date
US20220262787A1 (en) 2022-08-18
JPWO2021090688A1 (https=) 2021-05-14
US11824055B2 (en) 2023-11-21
CN114600242A (zh) 2022-06-07
WO2021090688A1 (ja) 2021-05-14
CN114600242B (zh) 2025-08-29

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