JPWO2021090688A1 - - Google Patents
Info
- Publication number
- JPWO2021090688A1 JPWO2021090688A1 JP2021554875A JP2021554875A JPWO2021090688A1 JP WO2021090688 A1 JPWO2021090688 A1 JP WO2021090688A1 JP 2021554875 A JP2021554875 A JP 2021554875A JP 2021554875 A JP2021554875 A JP 2021554875A JP WO2021090688 A1 JPWO2021090688 A1 JP WO2021090688A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019201491 | 2019-11-06 | ||
| JP2019201491 | 2019-11-06 | ||
| PCT/JP2020/039593 WO2021090688A1 (ja) | 2019-11-06 | 2020-10-21 | 半導体集積回路装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021090688A1 true JPWO2021090688A1 (https=) | 2021-05-14 |
| JPWO2021090688A5 JPWO2021090688A5 (https=) | 2022-07-07 |
| JP7610129B2 JP7610129B2 (ja) | 2025-01-08 |
Family
ID=75848200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021554875A Active JP7610129B2 (ja) | 2019-11-06 | 2020-10-21 | 半導体集積回路装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11824055B2 (https=) |
| JP (1) | JP7610129B2 (https=) |
| CN (1) | CN114600242B (https=) |
| WO (1) | WO2021090688A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7610129B2 (ja) * | 2019-11-06 | 2025-01-08 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| WO2024029040A1 (ja) * | 2022-08-04 | 2024-02-08 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| WO2024047820A1 (ja) * | 2022-08-31 | 2024-03-07 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| CN119650552A (zh) * | 2023-09-18 | 2025-03-18 | 联华电子股份有限公司 | 静电防护环结构及其制作方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010147282A (ja) * | 2008-12-19 | 2010-07-01 | Renesas Technology Corp | 半導体集積回路装置 |
| JP2014064044A (ja) * | 2014-01-07 | 2014-04-10 | Renesas Electronics Corp | 半導体集積回路装置 |
| JP2016072349A (ja) * | 2014-09-29 | 2016-05-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| WO2019043888A1 (ja) * | 2017-08-31 | 2019-03-07 | 株式会社ソシオネクスト | 半導体集積回路装置 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100307554B1 (ko) * | 1998-06-30 | 2001-11-15 | 박종섭 | Esd 소자를 구비하는 반도체장치 |
| DE10139956A1 (de) * | 2001-08-21 | 2003-03-13 | Koninkl Philips Electronics Nv | ESD Schutz für CMOS-Ausgangsstufe |
| US20050179088A1 (en) * | 2004-02-17 | 2005-08-18 | Infineon Technologies Ag | ESD protective apparatus for a semiconductor circuit having an ESD protective circuit which makes contact with a substrate or guard ring contact |
| JP2007234718A (ja) * | 2006-02-28 | 2007-09-13 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置 |
| US7564666B2 (en) * | 2006-05-02 | 2009-07-21 | Semiconductor Components Industries, L.L.C. | Shunt protection circuit and method therefor |
| US7538997B2 (en) * | 2006-05-31 | 2009-05-26 | Alpha & Omega Semiconductor, Ltd. | Circuit configurations to reduce snapback of a transient voltage suppressor |
| US8228651B2 (en) * | 2009-07-31 | 2012-07-24 | Hynix Semiconductor Inc. | ESD protection circuit |
| JP2011096897A (ja) * | 2009-10-30 | 2011-05-12 | Renesas Electronics Corp | 半導体装置及び電子機器 |
| US9087719B2 (en) * | 2012-09-28 | 2015-07-21 | Intel Corporation | Extended drain non-planar MOSFETs for electrostatic discharge (ESD) protection |
| US9013844B2 (en) * | 2013-01-15 | 2015-04-21 | Xilinx, Inc. | Circuit for and method of enabling the discharge of electric charge in an integrated circuit |
| JP6243720B2 (ja) * | 2013-02-06 | 2017-12-06 | エスアイアイ・セミコンダクタ株式会社 | Ｅｓｄ保護回路を備えた半導体装置 |
| US9054521B2 (en) * | 2013-06-25 | 2015-06-09 | Hong Kong Applied Science & Technology Research Institute Company, Ltd. | Electro-static-discharge (ESD) protection structure with stacked implant junction transistor and parallel resistor and diode paths to lower trigger voltage and raise holding volatge |
| US8958189B1 (en) * | 2013-08-09 | 2015-02-17 | Infineon Technologies Austria Ag | High-voltage semiconductor switch and method for switching high voltages |
| CN107112281B (zh) * | 2015-01-08 | 2020-11-10 | 松下半导体解决方案株式会社 | 半导体装置以及其设计方法 |
| US9871029B2 (en) * | 2016-05-06 | 2018-01-16 | Analog Devices Global | Bus driver / line driver |
| JP6841161B2 (ja) * | 2017-05-25 | 2021-03-10 | 株式会社ソシオネクスト | 半導体装置 |
| US11037921B2 (en) * | 2019-10-15 | 2021-06-15 | Nanya Technology Corporation | Off chip driver structure |
| JP7610129B2 (ja) * | 2019-11-06 | 2025-01-08 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| JP7342742B2 (ja) * | 2020-03-11 | 2023-09-12 | 三菱電機株式会社 | 半導体装置 |
| US20210408786A1 (en) * | 2020-06-30 | 2021-12-30 | Qualcomm Incorporated | Circuit techniques for enhanced electrostatic discharge (esd) robustness |
| JP2022163499A (ja) * | 2021-04-14 | 2022-10-26 | ローム株式会社 | 半導体装置 |
| CN115241855B (zh) * | 2021-04-23 | 2025-09-23 | 澜起科技股份有限公司 | 基于串联端接匹配的驱动输出电路、芯片及驱动输出方法 |
-
2020
- 2020-10-21 JP JP2021554875A patent/JP7610129B2/ja active Active
- 2020-10-21 WO PCT/JP2020/039593 patent/WO2021090688A1/ja not_active Ceased
- 2020-10-21 CN CN202080074126.7A patent/CN114600242B/zh active Active
-
2022
- 2022-05-02 US US17/735,052 patent/US11824055B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010147282A (ja) * | 2008-12-19 | 2010-07-01 | Renesas Technology Corp | 半導体集積回路装置 |
| JP2014064044A (ja) * | 2014-01-07 | 2014-04-10 | Renesas Electronics Corp | 半導体集積回路装置 |
| JP2016072349A (ja) * | 2014-09-29 | 2016-05-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| WO2019043888A1 (ja) * | 2017-08-31 | 2019-03-07 | 株式会社ソシオネクスト | 半導体集積回路装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20220262787A1 (en) | 2022-08-18 |
| US11824055B2 (en) | 2023-11-21 |
| CN114600242A (zh) | 2022-06-07 |
| JP7610129B2 (ja) | 2025-01-08 |
| WO2021090688A1 (ja) | 2021-05-14 |
| CN114600242B (zh) | 2025-08-29 |
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