CN1143395C - 半导体器件及其有关集成电路 - Google Patents

半导体器件及其有关集成电路 Download PDF

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Publication number
CN1143395C
CN1143395C CNB991203933A CN99120393A CN1143395C CN 1143395 C CN1143395 C CN 1143395C CN B991203933 A CNB991203933 A CN B991203933A CN 99120393 A CN99120393 A CN 99120393A CN 1143395 C CN1143395 C CN 1143395C
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China
Prior art keywords
gate
film
interconnection
electrode
mask
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Expired - Lifetime
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CNB991203933A
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English (en)
Chinese (zh)
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CN1254955A (zh
Inventor
山崎舜平
彦
竹村保彦
贵
间濑晃
鱼地秀贵
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN1254955A publication Critical patent/CN1254955A/zh
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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CNB991203933A 1991-09-25 1992-09-25 半导体器件及其有关集成电路 Expired - Lifetime CN1143395C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP273377/91 1991-09-25
JP27337791 1991-09-25
JP273377/1991 1991-09-25

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN92112490A Division CN1041873C (zh) 1991-09-25 1992-09-25 半导体器件及其形成方法

Publications (2)

Publication Number Publication Date
CN1254955A CN1254955A (zh) 2000-05-31
CN1143395C true CN1143395C (zh) 2004-03-24

Family

ID=17527054

Family Applications (8)

Application Number Title Priority Date Filing Date
CNB991203933A Expired - Lifetime CN1143395C (zh) 1991-09-25 1992-09-25 半导体器件及其有关集成电路
CN92112490A Expired - Lifetime CN1041873C (zh) 1991-09-25 1992-09-25 半导体器件及其形成方法
CN 200510008063 Pending CN1652312A (zh) 1991-09-25 1992-09-25 薄膜晶体管的制造方法
CNB2006100934562A Expired - Lifetime CN100490159C (zh) 1991-09-25 1992-09-25 一种薄膜晶体管器件
CNB2004100082826A Expired - Lifetime CN100388443C (zh) 1991-09-25 1992-09-25 薄膜晶体管的制造方法
CN95119391A Expired - Fee Related CN1059518C (zh) 1991-09-25 1995-11-25 薄膜晶体管的制造方法
CN 99120390 Expired - Fee Related CN1130766C (zh) 1991-09-25 1999-09-17 薄膜晶体管的制造方法
CNB991203895A Expired - Lifetime CN1147004C (zh) 1991-09-25 1999-09-17 薄膜晶体管的制造方法

Family Applications After (7)

Application Number Title Priority Date Filing Date
CN92112490A Expired - Lifetime CN1041873C (zh) 1991-09-25 1992-09-25 半导体器件及其形成方法
CN 200510008063 Pending CN1652312A (zh) 1991-09-25 1992-09-25 薄膜晶体管的制造方法
CNB2006100934562A Expired - Lifetime CN100490159C (zh) 1991-09-25 1992-09-25 一种薄膜晶体管器件
CNB2004100082826A Expired - Lifetime CN100388443C (zh) 1991-09-25 1992-09-25 薄膜晶体管的制造方法
CN95119391A Expired - Fee Related CN1059518C (zh) 1991-09-25 1995-11-25 薄膜晶体管的制造方法
CN 99120390 Expired - Fee Related CN1130766C (zh) 1991-09-25 1999-09-17 薄膜晶体管的制造方法
CNB991203895A Expired - Lifetime CN1147004C (zh) 1991-09-25 1999-09-17 薄膜晶体管的制造方法

Country Status (4)

Country Link
JP (1) JP2781706B2 (enExample)
KR (1) KR960010931B1 (enExample)
CN (8) CN1143395C (enExample)
TW (1) TW258835B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
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US5719065A (en) 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
JP3141979B2 (ja) * 1993-10-01 2001-03-07 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JPH07335904A (ja) 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd 薄膜半導体集積回路
KR100291971B1 (ko) 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법
JP3469337B2 (ja) * 1994-12-16 2003-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4421632B2 (ja) * 1996-01-19 2010-02-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4859266B2 (ja) * 1999-01-05 2012-01-25 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタとその製造方法および液晶表示装置
SG179310A1 (en) * 2001-02-28 2012-04-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
KR100459733B1 (ko) * 2002-12-30 2004-12-03 삼성전자주식회사 이중 캡핑막을 갖는 반도체 소자의 배선 및 그 형성 방법
US7973313B2 (en) 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
CN100356554C (zh) * 2004-03-16 2007-12-19 私立逢甲大学 制作整合性散热基板的方法
KR101043992B1 (ko) * 2004-08-12 2011-06-24 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR100645718B1 (ko) 2005-04-28 2006-11-14 삼성에스디아이 주식회사 박막 트랜지스터 및 그 제조방법
CN101621037B (zh) * 2008-07-03 2011-10-05 中芯国际集成电路制造(上海)有限公司 Tft sas存储单元结构
CN102386237A (zh) * 2011-11-23 2012-03-21 深圳市华星光电技术有限公司 一种薄膜晶体管、阵列基板及装置和一种制备方法
ITRE20110109A1 (it) 2011-12-07 2013-06-08 Redox S R L Macchina da caffe' a risparmio energetico
CN109216437B (zh) * 2017-06-30 2021-08-24 无锡华润上华科技有限公司 场板的自对准制造方法及半导体器件的制造方法
CN109773638B (zh) * 2019-02-02 2024-12-27 南方科技大学 一种刀具、单晶碳化硅材料的加工方法及加工设备
CN110148601B (zh) 2019-05-31 2022-12-20 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示装置
CN114613748A (zh) * 2022-02-24 2022-06-10 上海交通大学 有源面板级扇出型封装结构及其制备方法

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JPS52102690A (en) * 1976-02-25 1977-08-29 Hitachi Ltd Semiconductor capacitance device
JPS5611258A (en) * 1979-07-11 1981-02-04 Toray Ind Inc Installing method for lithoprinting plate to printer drum
JPS56111258A (en) * 1980-01-07 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Thin film semiconductor device
US4470852A (en) * 1982-09-03 1984-09-11 Ncr Corporation Method of making CMOS device and contacts therein by enhanced oxidation of selectively implanted regions
JPS625662A (ja) * 1985-07-01 1987-01-12 Nec Corp Ｓｏｉ型高耐圧ｉｃ
JPH07105338B2 (ja) * 1985-08-07 1995-11-13 日本電気株式会社 半導体装置の製造方法
JPH061836B2 (ja) * 1985-10-31 1994-01-05 シャープ株式会社 薄膜トランジスタ
JPS62104172A (ja) * 1985-10-31 1987-05-14 Fujitsu Ltd 半導体装置の製造方法
US4851363A (en) * 1986-07-11 1989-07-25 General Motors Corporation Fabrication of polysilicon fets on alkaline earth alumino-silicate glasses
JPS6489464A (en) * 1987-09-30 1989-04-03 Toshiba Corp Semiconductor device and manufacture thereof
US4988642A (en) * 1988-05-25 1991-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US5041888A (en) * 1989-09-18 1991-08-20 General Electric Company Insulator structure for amorphous silicon thin-film transistors
JPH03165575A (ja) * 1989-11-24 1991-07-17 Nec Corp 薄膜トランジスタとその製造方法
JP2717233B2 (ja) 1991-03-06 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置およびその作製方法
JPH04360580A (ja) * 1991-06-07 1992-12-14 Casio Comput Co Ltd 電界効果型トランジスタおよびその製造方法

Also Published As

Publication number Publication date
CN1909235A (zh) 2007-02-07
TW258835B (enExample) 1995-10-01
CN1254955A (zh) 2000-05-31
CN1130766C (zh) 2003-12-10
CN1041873C (zh) 1999-01-27
JPH05232515A (ja) 1993-09-10
CN1147004C (zh) 2004-04-21
KR960010931B1 (ko) 1996-08-13
CN1525543A (zh) 2004-09-01
CN1073300A (zh) 1993-06-16
CN1135095A (zh) 1996-11-06
CN1059518C (zh) 2000-12-13
CN100490159C (zh) 2009-05-20
CN1254951A (zh) 2000-05-31
CN1652312A (zh) 2005-08-10
CN100388443C (zh) 2008-05-14
CN1254947A (zh) 2000-05-31
JP2781706B2 (ja) 1998-07-30

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Expiration termination date: 20120925

Granted publication date: 20040324