CN114102269B - 用于处理具有多晶磨光的半导体晶片的方法 - Google Patents

用于处理具有多晶磨光的半导体晶片的方法 Download PDF

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Publication number
CN114102269B
CN114102269B CN202111316707.XA CN202111316707A CN114102269B CN 114102269 B CN114102269 B CN 114102269B CN 202111316707 A CN202111316707 A CN 202111316707A CN 114102269 B CN114102269 B CN 114102269B
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China
Prior art keywords
wafer
polishing
silicon layer
profile
initial
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English (en)
Chinese (zh)
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CN114102269A (zh
Inventor
G·D·张
M·S·克鲁克斯
T·M·拉根
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GlobalWafers Co Ltd
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GlobalWafers Co Ltd
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
CN202111316707.XA 2015-05-29 2016-05-26 用于处理具有多晶磨光的半导体晶片的方法 Active CN114102269B (zh)

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CN202111316707.XA CN114102269B (zh) 2015-05-29 2016-05-26 用于处理具有多晶磨光的半导体晶片的方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562168247P 2015-05-29 2015-05-29
US62/168,247 2015-05-29
CN202111316707.XA CN114102269B (zh) 2015-05-29 2016-05-26 用于处理具有多晶磨光的半导体晶片的方法
CN201680030931.3A CN107851579B (zh) 2015-05-29 2016-05-26 用于处理具有多晶磨光的半导体晶片的方法
PCT/US2016/034428 WO2016196216A1 (en) 2015-05-29 2016-05-26 Methods for processing semiconductor wafers having a polycrystalline finish

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CN114102269B true CN114102269B (zh) 2024-09-24

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US (2) US10699908B2 (enExample)
EP (2) EP3304580B1 (enExample)
JP (2) JP6613470B2 (enExample)
CN (2) CN114102269B (enExample)
TW (2) TWI714591B (enExample)
WO (1) WO2016196216A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6732382B2 (ja) * 2016-10-12 2020-07-29 株式会社ディスコ 加工装置及び被加工物の加工方法
CN110497303B (zh) * 2018-05-16 2024-06-07 长鑫存储技术有限公司 化学机械研磨制程方法及系统
JP7258443B2 (ja) * 2019-10-02 2023-04-17 株式会社ディスコ ドレッシング工具
US12482662B2 (en) * 2022-02-21 2025-11-25 Globalwafers Co., Ltd. Systems and methods for producing epitaxial wafers
JP7757903B2 (ja) * 2022-08-09 2025-10-22 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置
JP7757902B2 (ja) * 2022-08-09 2025-10-22 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1017090A1 (en) * 1996-09-20 2000-07-05 Speedfam Co., Ltd. Semiconductor wafer polishing device
JP2008284645A (ja) * 2007-05-17 2008-11-27 Tokyo Seimitsu Co Ltd 研磨装置および研磨方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07285069A (ja) * 1994-04-18 1995-10-31 Shin Etsu Handotai Co Ltd 枚葉式研磨におけるウェーハのテーパ自動除去研磨方法と装置
TW375556B (en) 1997-07-02 1999-12-01 Matsushita Electric Industrial Co Ltd Method of polishing the wafer and finishing the polishing pad
US6559040B1 (en) * 1999-10-20 2003-05-06 Taiwan Semiconductor Manufacturing Company Process for polishing the top surface of a polysilicon gate
US6517419B1 (en) * 1999-10-27 2003-02-11 Strasbaugh Shaping polishing pad for small head chemical mechanical planarization
US6568290B1 (en) * 2000-08-10 2003-05-27 Nanometrics Incorporated Method of measuring dishing using relative height measurement
JP4349752B2 (ja) * 2000-10-24 2009-10-21 株式会社荏原製作所 ポリッシング方法
TW495416B (en) 2000-10-24 2002-07-21 Ebara Corp Polishing apparatus
US6837774B2 (en) * 2001-03-28 2005-01-04 Taiwan Semiconductor Manufacturing Co., Ltd Linear chemical mechanical polishing apparatus equipped with programmable pneumatic support platen and method of using
JP2002337046A (ja) * 2001-05-11 2002-11-26 Sony Corp 研磨装置、研磨方法および半導体装置の製造方法
DE10314212B4 (de) * 2002-03-29 2010-06-02 Hoya Corp. Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske
JP2004014780A (ja) * 2002-06-06 2004-01-15 Renesas Technology Corp 平坦化処理の評価方法および半導体装置の製造方法
JP3985223B2 (ja) * 2002-06-17 2007-10-03 株式会社Ｓｕｍｃｏ Ｓｏｉ基板の研磨方法およびその装置
JP2004047876A (ja) * 2002-07-15 2004-02-12 Tokyo Seimitsu Co Ltd 研磨装置及び研磨方法
US6746310B2 (en) * 2002-08-06 2004-06-08 Qed Technologies, Inc. Uniform thin films produced by magnetorheological finishing
JP2004074385A (ja) * 2002-08-09 2004-03-11 Success:Kk 半導体ウエハの製造方法
KR100596880B1 (ko) * 2004-09-01 2006-07-05 동부일렉트로닉스 주식회사 반도체 소자의 게이트 형성 방법
KR100643628B1 (ko) * 2005-11-04 2006-11-10 제일모직주식회사 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법
EP1982160A4 (en) * 2006-02-09 2016-02-17 Kla Tencor Tech Corp METHOD AND SYSTEMS FOR DETERMINING A WAFER FEATURE
JP5390750B2 (ja) * 2007-03-30 2014-01-15 ラムバス・インコーポレーテッド 研磨装置、および研磨パッド再生処理方法
JP2010141155A (ja) * 2008-12-12 2010-06-24 Sony Corp ウェーハ研磨装置及びウェーハ研磨方法
JP5957802B2 (ja) * 2011-05-09 2016-07-27 日立化成株式会社 シリコン膜用ｃｍｐスラリー
JP5898420B2 (ja) * 2011-06-08 2016-04-06 株式会社荏原製作所 研磨パッドのコンディショニング方法及び装置
CN103871869B (zh) * 2012-12-18 2016-11-16 上海华虹宏力半导体制造有限公司 非感光性聚酰亚胺钝化层的制作方法
JP5964262B2 (ja) * 2013-02-25 2016-08-03 株式会社荏原製作所 研磨装置に使用される研磨部材のプロファイル調整方法、および研磨装置
DE102013206613B4 (de) * 2013-04-12 2018-03-08 Siltronic Ag Verfahren zum Polieren von Halbleiterscheiben mittels gleichzeitiger beidseitiger Politur
US20150107619A1 (en) * 2013-10-22 2015-04-23 Taiwan Semiconductor Manufacturing Company Limited Wafer particle removal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1017090A1 (en) * 1996-09-20 2000-07-05 Speedfam Co., Ltd. Semiconductor wafer polishing device
JP2008284645A (ja) * 2007-05-17 2008-11-27 Tokyo Seimitsu Co Ltd 研磨装置および研磨方法

Also Published As

Publication number Publication date
CN114102269A (zh) 2022-03-01
JP6613470B2 (ja) 2019-12-04
TWI714591B (zh) 2021-01-01
US20200312671A1 (en) 2020-10-01
TWI742938B (zh) 2021-10-11
WO2016196216A8 (en) 2017-12-14
US11355346B2 (en) 2022-06-07
CN107851579A (zh) 2018-03-27
JP2020025110A (ja) 2020-02-13
EP3304580B1 (en) 2019-07-10
TW201705254A (zh) 2017-02-01
JP6955537B2 (ja) 2021-10-27
EP3304580A1 (en) 2018-04-11
EP3576136A1 (en) 2019-12-04
WO2016196216A1 (en) 2016-12-08
JP2018518050A (ja) 2018-07-05
US10699908B2 (en) 2020-06-30
TW202113960A (zh) 2021-04-01
US20180151384A1 (en) 2018-05-31
CN107851579B (zh) 2021-11-09

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