CN113716957B - 陶瓷及其制备方法、陶瓷粉体、压电陶瓷和雾化装置 - Google Patents

陶瓷及其制备方法、陶瓷粉体、压电陶瓷和雾化装置 Download PDF

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CN113716957B
CN113716957B CN202110891116.9A CN202110891116A CN113716957B CN 113716957 B CN113716957 B CN 113716957B CN 202110891116 A CN202110891116 A CN 202110891116A CN 113716957 B CN113716957 B CN 113716957B
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ceramic
mass
niobium
source
equal
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CN113716957A (zh
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肖建新
彭策
周宏明
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Shenzhen Smoore Technology Ltd
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  • Compositions Of Oxide Ceramics (AREA)

Abstract

本发明涉及一种陶瓷及其制备方法、陶瓷粉体、压电陶瓷和雾化装置。以质量份数计,该陶瓷包括90份~100份的铌锌‑铌锡‑锆钛酸铅四元系材料和不超过10份的掺杂化合物,铌锌‑铌锡‑锆钛酸铅四元系材料的化学组成为:(1‑x‑y)(Pb0.94Ba0.04Sr0.02)(ZraTib)O3‑xPb(Sn1/3Nb2/3)O3‑yPb(Zn1/3Nb2/3)O3,其中,0≤x≤0.08,0≤y≤0.08,0.45≤a≤0.55,0.45≤b≤0.55,a+b=1,掺杂化合物包括CeO2、Fe2O3和MnO2。上述陶瓷制成的压电陶瓷具有高压电常数、高机械品质因数、高机电耦合系数和低介电损耗。

Description

陶瓷及其制备方法、陶瓷粉体、压电陶瓷和雾化装置
技术领域
本发明涉及陶瓷技术领域,特别是涉及一种陶瓷及其制备方法、陶瓷粉体、压电陶瓷和雾化装置。
背景技术
当前呼吸道疾病已成为人类主要致死病因之一,人们对如何高效预防和治疗呼吸道疾病愈发关注。雾化吸入治疗成为有效解决方案之一,而作为第三代雾化吸入装置的超声雾化装置,其主要工作原理是通过高性能压电陶瓷带动微孔筛网高频振动,从而在微孔区域形成瞬间高压雾化药液。因此,压电陶瓷是超声雾化装置的重要驱动元件。
然而,传统压电陶瓷由于驱动力不足而导致雾化吸入治疗时间延长,影响消费者治疗体验。同时,传统压电陶瓷的损耗值高,使其长时间使用会导致元器件发热问题,影响药液性质,存在潜在风险。此外,由于雾化需长时间进行,还容易导致压电陶瓷的性能快速衰减,谐振频率发生漂移而使用寿命变短。
发明内容
基于此,有必要提供一种陶瓷,使用该陶瓷能提高被电极并极化后得到的压电陶瓷的压电常数、机械品质因数和机电耦合系数,并能降低损耗。
此外,还提供一种用于制备上述陶瓷的陶瓷粉体、上述陶瓷的制备方法、包括上述陶瓷的压电陶瓷及包括该压电陶瓷的雾化装置。
一种陶瓷,以质量份数计,所述陶瓷包括90份~100份的铌锌-铌锡-锆钛酸铅四元系材料和不超过10份的掺杂化合物,所述铌锌-铌锡-锆钛酸铅四元系材料的化学组成为:(1-x-y)(Pb0.94Ba0.04Sr0.02)(ZraTib)O3-xPb(Sn1/3Nb2/3)O3-yPb(Zn1/3Nb2/3)O3,其中,0≤x≤0.08,0≤y≤0.08,0.45≤a≤0.55,0.45≤b≤0.55,a+b=1,所述掺杂化合物包括CeO2、Fe2O3和MnO2
上述陶瓷通过对铌锌-铌锡-锆钛酸铅四元系材料的优化并掺杂CeO2、Fe2O3和MnO2,使得上述陶瓷制成压电陶瓷之后的综合压电性能大幅度提高,可以提高压电常数、高机械品质因数和高机电耦合系数,降低介电损耗。
在其中一个实施例中,在所述陶瓷中,所述CeO2的质量份数不超过5份,所述Fe2O3的质量份数不超过3份,所述MnO2的质量份数不超过1份。
在其中一个实施例中,0.01≤x≤0.08,0.01≤y≤0.08;及/或,0.45≤a≤0.53,0.47≤b≤0.55。
在其中一个实施例中,0.01≤x≤0.04,0.01≤y≤0.04;
及/或,0.51≤a≤0.53,0.47≤b≤0.49;
及/或,在所述陶瓷中,所述CeO2的质量份数为0.4份~0.6份,所述Fe2O3的质量份为0.1份~1份,所述MnO2的质量份数为0.2份~0.6份。
在其中一个实施例中,在所述铌锌-铌锡-锆钛酸铅四元系材料中,Ba2+被Mg2+和/或Ca2+至少部分替代;及/或,Sr2+被Mg2+和/或Ca2+至少部分替代。
在其中一个实施例中,所述掺杂化合物还包括Sb2O3、Bi2O3、La2O3、HfO2、Cr2O3和Li2CO3中的至少一种。
在其中一个实施例中,在所述陶瓷中,所述掺杂化合物还包括Sb2O3、Bi2O3、La2O3、HfO2、Cr2O3和Li2CO3,以质量份数计,所述Sb2O3的质量份数不超过5份,所述Bi2O3的质量份数不超过2份,所述La2O3的质量份数不超过6份、所述HfO2的质量份数不超过4份、所述Cr2O3的质量份数不超过2份,所述Li2CO3的质量份数不超过1份。
一种陶瓷的制备方法,包括以下步骤:
根据上述的陶瓷的组成称取原料,采用固相合成法制备所述陶瓷。
在其中一个实施例中,所述采用固相合成法制备所述陶瓷的步骤包括:
将所述原料研磨之后预烧,制备陶瓷粉体;及
将所述陶瓷粉体造粒、成型、排胶及烧结,制备所述陶瓷。
在其中一个实施例中,所述陶瓷中铌锌-铌锡-锆钛酸铅四元系材料的原料包括铅源、钡源、锶源、锆源、钛源、锡源、铌源和锌源,所述铅源选自PbO和Pb3O4中的至少一种,所述钡源选自BaCO3和Ba(NO3)2中的至少一种,所述锶源选自SrCO3和SrO中的至少一种,所述锆源为ZrO2,所述钛源为TiO2,所述锡源为SnO2,所述铌源为Nb2O5,所述锌源为ZnO。
一种陶瓷粉体,以质量份数计,所述陶瓷粉体包括90份~100份的铌锌-铌锡-锆钛酸铅四元系材料和不超过10份的掺杂化合物,所述铌锌-铌锡-锆钛酸铅四元系材料的化学组成为:(1-x-y)(Pb0.94Ba0.04Sr0.02)(ZraTib)O3-xPb(Sn1/3Nb2/3)O3-yPb(Zn1/3Nb2/3)O3,其中,0≤x≤0.08,0≤y≤0.08,0.45≤a≤0.55,0.45≤b≤0.55,a+b=1,所述掺杂化合物包括CeO2、Fe2O3和MnO2
在其中一个实施例中,在所述铌锌-铌锡-锆钛酸铅四元系材料中,Ba2+被Mg2+和/或Ca2+至少部分替代;及/或,Sr2+被Mg2+和/或Ca2+至少部分替代。
一种压电陶瓷,所述压电陶瓷包括陶瓷本体和位于所述陶瓷本体上的电极,所述陶瓷本体为上述的陶瓷或由上述的陶瓷粉体经造粒、成型、排胶及烧结而成。
一种雾化装置,包括上述的压电陶瓷。
附图说明
图1~图2为实施例1的压电陶瓷的电学性能图;
图3为实施例1、实施例2和实施例3的压电陶瓷的XRD图。
具体实施方式
为了便于理解本发明,下面将对本发明进行更全面的描述,本发明可以以许多不同的形式来实现,并不限于本文所描述的实施例。相反地,提供这些实施例的目的是使本发明公开内容更加透彻全面。术语“第一”、“第二”等仅用于描述目的,而不能理解为指示或暗示相对重要性。术语“和/或”或“及/或”是指包括一个或多个相关的所列项目的任意的和所有的组合。
除非另有定义,本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的,不是旨在于限制本发明。
本申请一实施方式提供了一种陶瓷,以质量份数计,该陶瓷包括90份~100份的铌锌-铌锡-锆钛酸铅四元系材料和0份~10份的掺杂化合物,铌锌-铌锡-锆钛酸铅四元系材料的化学组成为:(1-x-y)(Pb0.94Ba0.04Sr0.02)(ZraTib)O3-xPb(Sn1/3Nb2/3)O3-yPb(Zn1/3Nb2/3)O3,其中,0≤x≤0.08,0≤y≤0.08,0.45≤a≤0.55,0.45≤b≤0.49,a+b=1,掺杂化合物包括CeO2、Fe2O3和MnO2
上述陶瓷通过对铌锌-铌锡-锆钛酸铅四元系材料(PZT-PSN-PZN)的优化并掺杂CeO2、Fe2O3和MnO2,使得上述陶瓷制成压电陶瓷之后的综合压电性能大幅度提高。采用上述陶瓷制备的压电陶瓷具有高压电常数(d33)、机械品质因数(Qm)和机电耦合系数(kp),同时介电损耗(tanδ)较低。此外,由老化数据看,上述陶瓷的时间稳定性好,还具备较长的使用寿命。
在一些实施例中,0<x≤0.08,0<y≤0.08,0.45<a≤0.53,0.45<b≤0.49。
在一些实施例中,0.01≤x≤0.08,0.01≤y≤0.08。进一步地,0.01≤x≤0.04,0.01≤y≤0.04。
在一些实施例中,0.45≤a≤0.53,0.47≤b≤0.49。进一步地,0.51≤a≤0.53,0.47≤b≤0.49。
CeO2作为常用的稀土氧化物烧结助剂,可以形成液相,有效降低烧结温度、提高坯体致密度,从而提高压电性能、降低压电损耗。可选地,CeO2的质量份数不超过1.5份。在一个具体的示例中,CeO2的质量份数为0.1份、0.3份、0.4份、0.5份、0.6份、0.8份或1.2份。进一步地,CeO2的质量份数为0.3份~0.8份。更进一步地,CeO2的质量份数为0.4份~0.6份。
Fe2O3可以作为异价离子引入晶格,改变主基体的电子云分布,影响矫顽场强及其它压电性能。可选地,Fe2O3的质量份数不超过3份。在一个具体的示例中,Fe2O3的质量份数为0.1份、0.2份、0.3份、0.5份、0.8份、1.2份、1.5份、2份或2.5份。进一步地,Fe2O3的质量份为0.1份~1份。更进一步地,Fe2O3的质量份为0.1份~0.5份。
MnO2中Mn是可变价离子,可以进入晶格使八面体产生畸变效应,同时形成氧空位,从而钉扎畴壁,提高电畴稳定性,使Qm提高。可选地,MnO2的质量份数不超过1份。在一个具体的示例中,MnO2的质量份数为0.1份、0.15份、0.2份、0.3份、0.5份、0.6份、0.8份或0.9份。进一步地,MnO2的质量份数为0.2份~0.6份。更进一步地,MnO2的质量份数为0.2份~0.5份。
在一些实施例中,以质量份数计,上述陶瓷包括90份~100份的铌锌-铌锡-锆钛酸铅四元系材料和不超过6份的掺杂化合物。
在一些实施例中,上述陶瓷包括90份~100份的铌锌-铌锡-锆钛酸铅四元系材料和不超过4.5份的掺杂化合物。
在一些实施例中,CeO2的质量份数为0.3份~0.8份,Fe2O3的质量份为0.1份~1份,MnO2的质量份数为0.2份~0.6份。进一步地,CeO2的质量份数为0.4份~0.6份,Fe2O3的质量份为0.1份~0.5份,MnO2的质量份数为0.2份~0.5份。
在一些实施例中,在所述铌锌-铌锡-锆钛酸铅四元系材料中,Ba2+被Mg2+和/或Ca2+至少部分替代。Sr2+被Mg2+或Ca2+至少部分替代。Mg2+或Ca2+可以作为A位离子引入,可以减少Pb引入量,碱土金属本身容易与其他离子性能低共融物,从而降低烧结温度、减少Pb挥发,提高化合物稳定性。
在一些实施例中,掺杂化合物还包括Sb2O3、Bi2O3、La2O3、HfO2、Cr2O3和Li2CO3中的至少一种。Sb2O3、Bi2O3、La2O3、HfO2、Cr2O3和Li2CO3中可以异价离子引入晶格,改变主基体的电子云分布,影响矫顽场强及其它压电性能。
可选地,Sb2O3的质量份数不超过5份。进一步地,Sb2O3的质量份数为1份~4份。可选地,Bi2O3的质量份数不超过2份。进一步地,Bi2O3的质量份数为0.5份~1.5份。可选地,La2O3的质量份数不超过6份。进一步地,La2O3的质量份数为0.5份~3份。可选地,HfO2的质量份数不超过4份。进一步地,HfO2的质量份数为0.1份~1份。可选地,Cr2O3的质量份数不超过2份。进一步地,Cr2O3的质量份数为0.2份~1份。可选地,Li2CO3的质量份数不超过1份。进一步地,Li2CO3的质量份数为0.1份~0.8份。
在一些实施例中,以质量份数计,掺杂化合物还包括Sb2O3、Bi2O3、La2O3、HfO2、Cr2O3和Li2CO3,Sb2O3的质量份数不超过5份,Bi2O3的质量份数不超过2份,La2O3的质量份数不超过6份,HfO2的质量份数不超过4份,Cr2O3的质量份数不超过2份,Li2CO3的质量份数不超过1份。进一步地,Sb2O3的质量份数为1份~4份,Bi2O3的质量份数为0.5份~1.5份,La2O3的质量份数为0.5份~3份,HfO2的质量份数为0.1份~1份,Cr2O3的质量份数为0.2份~1份,Li2CO3的质量份数为0.1份~0.8份。
此外,本申请一实施方式还提供了一种压电陶瓷,该压电陶瓷包括陶瓷本体和位于陶瓷本体上的电极,其中,陶瓷本体为上述任一实施例的陶瓷。
上述压电陶瓷包括上述陶瓷,是一种高压电常数、低损耗、高机械品质因数且高机电耦合系数的压电陶瓷。
另外,本申请一实施方式还提供了一种上述压电陶瓷的制备方法,该制备方法包括以下步骤S100和步骤S200:
步骤S100:根据陶瓷的组成称取原料,并采用固相合成法制备陶瓷本体。
具体地,陶瓷中铌锌-铌锡-锆钛酸铅四元系材料的原料包括铅源、钡源、锶源、锆源、钛源、锡源、铌源和锌源。在一些实施中,陶瓷中的铌锌-铌锡-锆钛酸铅四元系材料的原料为含有上述金属元素的氧化物、碳酸盐和/或硝酸盐。可选地,铅源选自PbO和Pb3O4中的至少一种;钡源选自BaCO3和BaNO3中的至少一种;锶源选自SrCO3和SrO中的至少一种;锆源为ZrO;钛源为TiO2;锡源为SnO2;铌源为Nb2O5;锌源为ZnO。可以理解的是,在铅源、钡源、锶源、锆源、钛源、锡源、铌源和锌源均不限于上述。
在一些实施例中,ZnNb2O6作为铌源和锌源,SnNb2O7作为锡源和铌源。ZnNb2O6是由ZnO和Nb2O5按配比在900℃~1100℃条件下进行预合成。进一步地,合成的温度为1000℃。SnNb2O7是由Nb2O5和SnO2按配比在900℃~1100℃条件下进行预合成。进一步地,合成的温度为1000℃。通过预合成ZnNb2O6和SnNb2O7,可以避免焦绿石杂相的形成。当然,也可以将ZnO、Nb2O5、SnO2按配比在900℃~1100℃条件下混合后合成ZnNb2O6和SnNb2O7
在一些实施例中,根据陶瓷的组成称取原料,并采用固相合成法制备陶瓷本体的步骤包括步骤a和步骤b:
步骤a:根据陶瓷的组成称取原料,并将原料研磨之后预烧,制备陶瓷粉体。
具体地,根据陶瓷的组成称取原料,其中,铌锌-铌锡-锆钛酸铅四元系材料的原料称取量可以根据其化学通式计算。
可选地,研磨的方式为球磨。在一些实施例中,研磨方式为干磨,在另一些实施方式中,研磨方式为湿磨。
可选地,预烧温度为800℃~1000℃。保温时间为1h~10h。进一步地,预烧温度为850℃~950℃。保温时间为2h~4h。
在一些实施例中,制备陶瓷粉体的步骤包括:将原料与研磨锆球和无水乙醇混合后球磨,干燥,制备能过100目筛的预混料;将制备的预混料在800℃~1000℃条件下保温1h~10h,制备第一次预烧产物;将第一次预烧产物粉碎成粒径小于0.2mm的粉体后与研磨锆球及无水乙醇混合并球磨,然后干燥,制备能过100目的预烧粉体;将预烧粉体在800℃~1000℃条件下保温1h~10h,制备第二次预烧产物;及第二次预烧产物粉碎成小粒径小于0.5mm的粉体后与研磨锆球及无水乙醇混合并球磨,然后干燥,制备能过100目的陶瓷粉体。在上述实施例中,通过将原料按照球磨、干燥、烧成及细磨的顺序进行两次,使得制备的陶瓷粉体的物相更加均匀。可以理解的是,在其他一些实施例中,球磨、干燥、烧成及细磨的工艺也可以只进行一次或者三次以上。
可选地,在球磨的过程中,无水乙醇的质量占总混合料的质量的1.5%~2.5%。原料或粉体与球磨锆球的质量之比为1:(1.5~2.5)。总混合料是指在球磨时被研磨的物料的总和。
步骤b:将陶瓷粉体造粒、成型、排胶及烧结,制备陶瓷本体。
具体地,造粒、成型、排胶及烧结的工艺没有特别限制,可以根据实际需求进行选择和调整。可选地,将步骤a制得的陶瓷粉体通过喷雾造粒处理,然后在模具中压制成型,制备粗坯;将粗坯在500℃~800℃条件下排胶;及将排胶结束后的粗坯在1220℃~1300℃条件下烧结,制备陶瓷本体。其中:排胶的时间为4h~24h;将粗坯烧结成陶瓷本体的步骤中,烧结的时间为6h~16h。
步骤S200:在陶瓷本体上制备电极,制备压电陶瓷。
具体地,将陶瓷本体倒角磨削、被电极及极化电极,制备压电陶瓷。倒角磨削、被电极及极化电极的工艺没有特别限制,可以根据实际需求进行选择和调整。可选地,在陶瓷本体上制备电极以制备压电陶瓷的步骤包括:将对陶瓷本体进行磨削,制备磨削一致的陶瓷本体;将磨削一致后的陶瓷本体清洗、丝网印电极后,在750℃~850℃中烧成,制备带有电极的陶瓷本体;及将带有电极的陶瓷本体置于直流电场中极化,制备压电陶瓷。其中:电极材料没有特别限制,例如,可以为银。极化场强1kV/mm~2kV/mm,极化时间15min~30min,极化温度80℃~120℃。
上述压电陶瓷的制备方法简捷,利于工业化生产。按照上述方法制备的压电陶瓷具有高压电常数、高机械品质因数、高机电耦合系数和低介电损耗,同时还具备较长的使用寿命。
此外,本申请一实施方式还提供一种陶瓷粉体,以质量份数计,该陶瓷粉体包括90份~100份的铌锌-铌锡-锆钛酸铅四元系材料和不超过10份的掺杂化合物,铌锌-铌锡-锆钛酸铅四元系材料的化学组成为:(1-x-y)(Pb0.94Ba0.04Sr0.02)(ZraTib)O3-xPb(Sn1/3Nb2/3)O3-yPb(Zn1/3Nb2/3)O3,其中,0≤x≤0.08,0≤y≤0.08,0.45≤a≤0.55,0.45≤b≤0.55,a+b=1,掺杂化合物包括CeO2、Fe2O3和MnO2。在一些实施例中,陶瓷粉体的粒径不超过100目。可选地,上述陶瓷粉体由上述陶瓷的制备方法中步骤a制得。
在一些实施例中,上述陶瓷粉体的铌锌-铌锡-锆钛酸铅四元系材料中,Ba2+被Mg2+和/或Ca2+至少部分替代。Sr2+被Mg2+和/或Ca2+至少部分替代。此时,在制备上述陶瓷粉体时在上述陶瓷的制备方法中步骤a的基础上做适应性调整即可。
上述陶瓷粉体可用于制备压电陶瓷,采用上述陶瓷粉体制备的压电陶瓷具有高压电常数、高机械品质因数和高机电耦合系数,且介电损耗低。
此外,本申请一实施方式还提供了一种雾化装置,包括上述压电陶瓷。
在一些实施例中,雾化装置还包括电源,电源与压电陶瓷的电极电连接,为压电陶瓷供电。具体地,上述雾化装置为医疗雾化器。
上述雾化装置包括上述压电陶瓷,使得上述雾化装置的雾化速率更快、功率更低,损耗发热更低,不容易由于损耗发热而导致药剂性质变化,并且其抗干烧能力更强,使用寿命更长。
具体实施例
以下结合具体实施例进行详细说明。以下实施例如未特殊说明,则不包括除不可避免的杂质外的其他组分。实施例中采用试剂和仪器如非特别说明,均为本领域常规选择。实施例中未注明具体条件的实验方法,按照常规条件,例如文献、书本中所述的条件或者生产厂家推荐的方法实现。以下实施例中,“%wt”表示重量百分数。下文中所用到的材料均为分析纯以上的纯度。
实施例1
请参阅表1,本实施例的压电陶瓷包括陶瓷本体和位于陶瓷本体上的电极,且电极经极化处理。陶瓷本体的组成包括98.4%wt的铌锌-铌锡-锆钛酸铅四元系材料和1.6%wt的掺杂化合物,铌锌-铌锡-锆钛酸铅四元系材料的化学通式为:(1-x-y)(Pb0.94Ba0.04Sr0.02)(ZraTib)O3-xPb(Sn1/3Nb2/3)O3-yPb(Zn1/3Nb2/3)O3,其中,x=0.02;y=0.02;a=0.519;b=0.481;掺杂化合物为CeO2、Fe2O3、MnO2和Li2CO3(作为助烧剂),其中,CeO2在陶瓷本体中的质量百分数为0.5%,Fe2O3在陶瓷本体中的质量百分数为0.3%,MnO2在陶瓷本体中的质量百分数为0.3%,Li2CO3在陶瓷本体中的质量百分数为0.5%;另外引入5%wt PbO作为Pb源补偿。
具体地,本实施例的压电陶瓷的制备方法包括以下步骤:
(1)配料:以PbO、BaCO3、SrCO3、ZrO2、TiO2、SnO2、Nb2O5、ZnO、CeO2、Fe2O3、MnO2和Li2CO3为原料,按照陶瓷本体的组成称取原料后,放入容器中,按质量比混合料:研磨锆球=1:2加入研磨锆球,然后加入混合料总重量2%的无水乙醇。此处的混合料是指按照陶瓷本体的组成称取的原料的总和。
(2)混料:将上述配制好的混合料与无水乙醇的混合物进行滚筒球磨,球磨24小时。
(3)第一次干燥:将步骤(2)球磨得到的粉体80℃干燥,随后过100目筛,取筛下物备用。
(4)第一次合成:将步骤(3)过筛后的粉体在马弗炉中880℃预烧2h。
(5)第一次细磨:将步骤(4)预烧后的粉体在破碎机中破碎成粒径小于0.2mm的粉体之后,在形星球磨中球磨:按照质量比粉体:研磨球=1:2的比例加入研磨球,并加入粉体质量的2%的无水乙醇,转速300r/min,球磨时间12h。
(6)第二次干燥:将步骤(5)球磨好的粉体80℃干燥,随后过100目筛,取筛下物备用。
(7)第二次合成:将步骤(6)过筛后的粉体马弗炉中910℃保温4h。
(8)第二次细磨:将步骤(6)保温后的粉体在破碎机中破碎成粒径小于0.5mm的粉体,之后进一步在形星球磨中球磨:按照质量比粉体:研磨球=1:2的比例加入研磨球,并加入粉体质量的2%的无水乙醇,转速300r/min,球磨时间12h,然后,经干燥后过100目筛后,制得陶瓷粉体。
(9)造粒:将步骤(8)制得的陶瓷粉体进行喷雾造粒处理。
(10)成型:将步骤(8)处理好粉体在环形模具中压制成型,粗坯厚度为0.9mm。
(11)排胶:将步骤(10)制得的粗坯在马弗炉中600℃排胶8h。
(12)烧结:将步骤(11)排胶结束后的粗坯转移至马弗炉中,盖上氧化铝坩埚,1260℃条件下烧结12h,制得陶瓷本体。
(13)倒角磨削:将步骤(12)制得的陶瓷本体进行倒角磨削,保障平整、光洁、一致。
(14)披电极:将步骤(12)磨削一致后的陶瓷本体清洗、丝网印银,然后在网带炉中800℃烧银1h,制得带有电极的陶瓷本体。
(15)极化:将带有电极的陶瓷本体置于直流电场中极化,极化场强1.5KV/mm,极化时间20min,极化温度100℃,制备压电陶瓷。
通过d33测试仪及阻抗分析仪测试本实施例的压电陶瓷,结果为:d33=409pC/N,介质损耗为0.33%,阻抗为7Ω,电容为2.82nF。进一步计算得到机电耦合系数kp值为0.62,机械品质因数(Qm)为2900。采用介电温谱仪测试的本实施例的压电陶瓷的居里温度为300℃。本实施例的压电陶瓷的电学性能图如图1~图2所示,XRD物相(纯钙钛矿相)分析结果如图3所示。图1中上方的曲线为d33与时间的关系曲线,图1中下方的曲线为阻抗与时间的关系曲线;图2中上方的曲线为频率与时间的关系曲线,图2中下方的曲线为电容与时间的关系曲线。
由图1和图2可以看出,本实施例的压电陶瓷的时间稳定性好。
实施例2
请参阅表1,本实施例的压电陶瓷的结构大致与实施例1相同,其不同在于,本实施例的陶瓷本体的组成中MnO2的含量与实施例1不同,本实施例中,MnO2在陶瓷本体中的质量百分数为0.15%。
本实施例的压电陶瓷的制备方法也与实施例1大致相同,其不同在于,本实施例的原料的用量在实施例1的基础上作适应性调整。
通过d33测试仪、阻抗分析仪和介电温谱仪测试并计算本实施例的压电陶瓷的性能参数,结果为:d33为465pC/N,介电损耗为0.66%,阻抗为19Ω,电容为4.87nF,机电耦合系数为0.58,机械品质因数为1000,居里温度为320℃。本实施例的压电陶瓷(纯钙钛矿相)的XRD分析结果如图3所示。
实施例3
请参阅表1,本实施例的压电陶瓷的结构大致与实施例1相同,其不同在于,本实施例的陶瓷本体的组成中Fe2O3的含量与实施例1不同,本实施例中,Fe2O3在陶瓷本体中的质量百分数为0.15%。
本实施例的压电陶瓷的制备方法也与实施例1大致相同,其不同在于,本实施例的原料的用量在实施例1的基础上作适应性调整。
通过d33测试仪、阻抗分析仪和介电温谱仪测试并计算本实施例的压电陶瓷的性能参数,结果为:d33为435pC/N,介电损耗为0.37%,阻抗为9Ω,电容为4.12nF,机电耦合系数为0.61,机械品质因数为1600,居里温度为310℃。本实施例的压电陶瓷的XRD分析结果如图3所示。
实施例4
请参阅表1,本实施例的压电陶瓷的结构大致与实施例1相同,其不同在于,本实施例的陶瓷本体的组成中不含CeO2、Fe2O3和MnO2,Li2CO3在陶瓷本体中的质量百分数为0.5%。
本实施例的压电陶瓷的制备方法也与实施例1大致相同,其不同在于,本实施例的原料的用量在实施例1的基础上作适应性调整。
通过d33测试仪、阻抗分析仪和介电温谱仪测试并计算,本实施例的压电陶瓷的性能参数,结果为:d33为335pC/N,介质损耗为2.51%,阻抗为68Ω,电容为4.3nF,机电耦合系数为0.52,机械品质因数为200,居里温度为340℃。
实施例5
请参阅表1,本实施例的压电陶瓷的结构大致与实施例1相同,其不同在于,本实施例的陶瓷本体的组成中Fe2O3的含量与实施例1不同,本实施例中,Fe2O3在陶瓷本体中的质量百分数为3%。
本实施例的压电陶瓷的制备方法也与实施例1大致相同,其不同在于,本实施例的原料的用量在实施例1的基础上作适应性调整。
通过d33测试仪、阻抗分析仪和介电温谱仪测试并计算,本实施例的压电陶瓷的性能参数结果为:d33为378pC/N,介质损耗为0.46%,阻抗为12Ω,电容为3.55nF,机电耦合系数为0.55,机械品质因数为1300,居里温度为310℃。
实施例6
请参阅表1,本实施例的压电陶瓷的结构大致与实施例1相同,其不同在于,本实施例的陶瓷本体的铌锌-铌锡-锆钛酸铅四元系材料的化学通式中x和y的取值与实施例1不同,本实施例中,x=0.015,y=0.015。
本实施例的压电陶瓷的制备方法也与实施例1大致相同,其不同在于,本实施例的原料的用量在实施例1的基础上作适应性调整。
通过d33测试仪、阻抗分析仪和介电温谱仪测试并计算,本实施例的压电陶瓷的性能参数结果为:d33为362pC/N,介质损耗为0.46%,阻抗为20Ω,电容为2.75nF,机电耦合系数为0.54,机械品质因数为1500,居里温度为310℃。
实施例7
请参阅表1,本实施例的压电陶瓷的结构大致与实施例1相同,其不同在于,本实施例的陶瓷本体的铌锌-铌锡-锆钛酸铅四元系材料的化学通式中的x和y的取值与实施例1不同,本实施例中,x=0.01,y=0.01。
本实施例的压电陶瓷的制备方法也与实施例1大致相同,其不同在于,本实施例的原料的用量在实施例1的基础上作适应性调整。
通过d33测试仪、阻抗分析仪和介电温谱仪测试并计算,本实施例的压电陶瓷的性能参数结果为:d33为332pC/N,介质损耗为1.32%,阻抗为50Ω,电容为2.31nF,机电耦合系数为0.48,机械品质因数为1100,居里温度为330℃。
实施例8
请参阅表1,本实施例的压电陶瓷的结构大致与实施例1相同,其不同在于,本实施例的陶瓷本体的铌锌-铌锡-锆钛酸铅四元系材料的化学通式中x和y的取值与实施例1不同,本实施例中,x=0,y=0.2。
本实施例的压电陶瓷的制备方法也与实施例1大致相同,其不同在于,本实施例的原料的用量在实施例1的基础上作适应性调整。
通过d33测试仪、阻抗分析仪和介电温谱仪测试并计算,本实施例的压电陶瓷的性能参数结果为:d33=365pC/N,介质损耗为0.53%,阻抗为55Ω,电容为2.69nF,机电耦合系数为0.49,机械品质因数为600,居里温度为340℃。
实施例9
请参阅表1,本实施例的压电陶瓷的结构大致与实施例1相同,其不同在于,本实施例的陶瓷本体的铌锌-铌锡-锆钛酸铅四元系材料的化学通式中a和b的取值与实施例1不同,本实施例中,a=0.53;b=0.47。
本实施例的压电陶瓷的制备方法也与实施例1大致相同,其不同在于,本实施例的原料的用量在实施例1的基础上作适应性调整。
通过d33测试仪、阻抗分析仪和介电温谱仪测试并计算,本实施例的压电陶瓷的性能参数结果为:d33为385pC/N,介质损耗为0.53%,阻抗为15Ω,电容为3.15nF,机电耦合系数为0.58,机械品质因数为1800,居里温度为300℃。
实施例10
请参阅表1,本实施例的压电陶瓷的结构大致与实施例1相同,其不同在于,本实施例的陶瓷本体的铌锌-铌锡-锆钛酸铅四元系材料的化学通式中a和b的取值与实施例1不同,本实施例中,a=0.51,b=0.49。
本实施例的压电陶瓷的制备方法也与实施例1大致相同,其不同在于,本实施例的原料的用量在实施例1的基础上作适应性调整。
通过d33测试仪、阻抗分析仪和介电温谱仪测试并计算,本实施例的压电陶瓷的性能参数结果为:d33为386pC/N,介质损耗为0.49%,阻抗为14Ω,电容为3.02nF,机电耦合系数为0.58,机械品质因数为1900,居里温度为300℃。
实施例11
请参阅表1,本实施例的压电陶瓷的结构大致与实施例1相同,其不同在于,本实施例的陶瓷本体的铌锌-铌锡-锆钛酸铅四元系材料的化学通式中a和b的取值与实施例1不同,本实施例中,a=0.47,b=0.53。
本实施例的压电陶瓷的制备方法也与实施例1大致相同,其不同在于,本实施例的原料的用量在实施例1的基础上作适应性调整。
通过d33测试仪、阻抗分析仪和介电温谱仪测试并计算,本实施例的压电陶瓷的性能参数结果为:d33为300pC/N,介质损耗为0.76%,阻抗为29Ω,电容为3.78nF,机电耦合系数为0.52,机械品质因数为1200,居里温度为300℃。
Figure BDA0003195938650000181
由表1可知,实施例1~11的压电陶瓷的压电性能参数高于商用压电陶瓷,高压电常数、低介电损耗、高机械品质因数和高机电耦合系数。
以上所述实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式,便于具体和详细地理解本发明的技术方案,但并不能因此而理解为对发明专利保护范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。应当理解的是,在本领域技术人员在本发明提供的技术方案的基础上,通过合乎逻辑的分析、推理或有限的试验得到的技术方案,均在本发明所附权利要求的保护范围内。因此,本发明专利的保护范围应以所附权利要求的内容为准,说明书及附图可以用于解释权利要求的内容。

Claims (13)

1.一种陶瓷,其特征在于,以质量份数计,所述陶瓷包括90份~100份的铌锌-铌锡-锆钛酸铅四元系材料和不超过10份的掺杂化合物,所述铌锌-铌锡-锆钛酸铅四元系材料的化学组成为:(1-x-y)(Pb0.94Ba0.04Sr0.02)(ZraTib)O3-xPb(Sn1/3Nb2/3)O3-yPb(Zn1/3Nb2/3)O3,其中,0<x≤0.08,0<y≤0.08,0.45<a≤0.53,0.45<b≤0.49,a+b=1,所述掺杂化合物包括CeO2、Fe2O3和MnO2及Li2CO3,CeO2的质量份数为0.3份~0.8份,Fe2O3的质量份数为0.1份~1份,MnO2的质量份数为0.2份~0.6份,所述Li2CO3的质量份数不超过1份。
2.根据权利要求1所述的陶瓷,其特征在于,0.01≤x≤0.08,0.01≤y≤0.08。
3.根据权利要求1所述的陶瓷,其特征在于,0.01≤x≤0.04,0.01≤y≤0.04;
及/或,0.51≤a≤0.53,0.47≤b≤0.49;
及/或,在所述陶瓷中,所述CeO2的质量份数为0.4份~0.6份,所述Fe2O3的质量份为0.1份~1份,所述MnO2的质量份数为0.2份~0.6份。
4.根据权利要求1~3任一项所述的陶瓷,其特征在于,在所述铌锌-铌锡-锆钛酸铅四元系材料中,Ba2+被Mg2+和/或Ca2+至少部分替代;及/或,Sr2+被Mg2+和/或Ca2+至少部分替代。
5.根据权利要求4所述的陶瓷,其特征在于,所述掺杂化合物还包括Sb2O3、Bi2O3、La2O3、HfO2和Cr2O3中的至少一种。
6.根据权利要求5所述的陶瓷,其特征在于,在所述陶瓷中,所述掺杂化合物还包括Sb2O3、Bi2O3、La2O3、HfO2、Cr2O3和Li2CO3,以质量份数计,所述Sb2O3的质量份数不超过5份,所述Bi2O3的质量份数不超过2份,所述La2O3的质量份数不超过6份、所述HfO2的质量份数不超过4份、所述Cr2O3的质量份数不超过2份。
7.一种陶瓷的制备方法,其特征在于,包括以下步骤:
根据权利要求1~6任一项所述的陶瓷的组成称取原料,采用固相合成法制备所述陶瓷。
8.根据权利要求7所述的陶瓷的制备方法,其特征在于,所述采用固相合成法制备所述陶瓷的步骤包括:
将所述原料研磨之后预烧,制备陶瓷粉体;及
将所述陶瓷粉体造粒、成型、排胶及烧结,制备所述陶瓷。
9.根据权利要求7或8所述的陶瓷的制备方法,其特征在于,所述陶瓷中铌锌-铌锡-锆钛酸铅四元系材料的原料包括铅源、钡源、锶源、锆源、钛源、锡源、铌源和锌源,所述铅源选自PbO和Pb3O4中的至少一种,所述钡源选自BaCO3和Ba(NO3)2中的至少一种,所述锶源选自SrCO3和SrO中的至少一种,所述锆源为ZrO2,所述钛源为TiO2,所述锡源为SnO2,所述铌源为Nb2O5,所述锌源为ZnO。
10.一种陶瓷粉体,其特征在于,以质量份数计,所述陶瓷粉体包括90份~100份的铌锌-铌锡-锆钛酸铅四元系材料和不超过10份的掺杂化合物,所述铌锌-铌锡-锆钛酸铅四元系材料的化学组成为:(1-x-y)(Pb0.94Ba0.04Sr0.02)(ZraTib)O3-xPb(Sn1/3Nb2/3)O3-yPb(Zn1/ 3Nb2/3)O3,其中,0<x≤0.08,0<y≤0.08,0.45<a≤0.53,0.45<b≤0.49,a+b=1,所述掺杂化合物包括CeO2、Fe2O3和MnO2及Li2CO3,CeO2的质量份数为0.3~0.8份,Fe2O3的质量份数为0.1份~1份,MnO2的质量份数为0.2份~0.6份,所述Li2CO3的质量份数不超过1份。
11.根据权利要求10所述的陶瓷粉体,其特征在于,在所述铌锌-铌锡-锆钛酸铅四元系材料中,Ba2+被Mg2+和/或Ca2+至少部分替代;及/或,Sr2+被Mg2+和/或Ca2+至少部分替代。
12.一种压电陶瓷,其特征在于,所述压电陶瓷包括陶瓷本体和位于所述陶瓷本体上的电极,所述陶瓷本体为权利要求1~6任一项所述的陶瓷或由权利要求10~11任一项所述的陶瓷粉体经造粒、成型、排胶及烧结而成。
13.一种雾化装置,其特征在于,包括权利要求12所述的压电陶瓷。
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