CN113380684B - 制造方法、制造装置、夹具组件、半导体模块和车辆 - Google Patents
制造方法、制造装置、夹具组件、半导体模块和车辆 Download PDFInfo
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- CN113380684B CN113380684B CN202110096415.3A CN202110096415A CN113380684B CN 113380684 B CN113380684 B CN 113380684B CN 202110096415 A CN202110096415 A CN 202110096415A CN 113380684 B CN113380684 B CN 113380684B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 341
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 64
- 238000005476 soldering Methods 0.000 claims abstract description 69
- 238000003466 welding Methods 0.000 claims abstract description 66
- 230000001678 irradiating effect Effects 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims description 67
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 28
- 229910052802 copper Inorganic materials 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- 238000012937 correction Methods 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 13
- 238000006073 displacement reaction Methods 0.000 claims description 10
- 230000000295 complement effect Effects 0.000 claims description 7
- 238000000429 assembly Methods 0.000 claims description 5
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- 230000006835 compression Effects 0.000 claims description 3
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- 239000000463 material Substances 0.000 abstract description 13
- 239000003517 fume Substances 0.000 abstract description 2
- 238000003860 storage Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 15
- 238000003825 pressing Methods 0.000 description 15
- 238000012546 transfer Methods 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 229910000881 Cu alloy Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000004891 communication Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000010365 information processing Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
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- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
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- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- 230000005669 field effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/141—Disposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Laser Beam Processing (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-041099 | 2020-03-10 | ||
| JP2020041099A JP7562965B2 (ja) | 2020-03-10 | 2020-03-10 | 製造方法、製造装置、治具アセンブリ、半導体モジュールおよび車両 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113380684A CN113380684A (zh) | 2021-09-10 |
| CN113380684B true CN113380684B (zh) | 2024-09-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110096415.3A Active CN113380684B (zh) | 2020-03-10 | 2021-01-25 | 制造方法、制造装置、夹具组件、半导体模块和车辆 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7562965B2 (ja) |
| CN (1) | CN113380684B (ja) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008305902A (ja) * | 2007-06-06 | 2008-12-18 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2070743A1 (en) * | 1991-06-18 | 1992-12-19 | Masanori Nishiguchi | Semiconductor chip module and method for manufacturing the same |
| JP2001196607A (ja) * | 2000-01-12 | 2001-07-19 | Sumitomo Electric Ind Ltd | マイクロベンチとその製造方法及びそれを用いた光半導体モジュール |
| JP4007143B2 (ja) | 2002-10-09 | 2007-11-14 | 日産自動車株式会社 | 電子部品、電子部品の製造方法及び製造装置 |
| CN100477136C (zh) * | 2006-01-10 | 2009-04-08 | 矽品精密工业股份有限公司 | 电路板及其构装结构 |
| JP5076440B2 (ja) | 2006-10-16 | 2012-11-21 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP4959318B2 (ja) * | 2006-12-20 | 2012-06-20 | 株式会社ディスコ | ウエーハの計測装置およびレーザー加工機 |
| JP4894528B2 (ja) | 2007-01-17 | 2012-03-14 | トヨタ自動車株式会社 | 半導体素子の配線接合方法 |
| JP2008194707A (ja) | 2007-02-09 | 2008-08-28 | Fuji Electric Device Technology Co Ltd | レーザ溶接用治具およびそれを用いた半導体装置の製造方法 |
| JP4858238B2 (ja) | 2007-03-05 | 2012-01-18 | 富士電機株式会社 | レーザ溶接部材およびそれを用いた半導体装置 |
| HK1109708A2 (en) * | 2007-04-24 | 2008-06-13 | On Track Innovations Ltd | Interface card and apparatus and process for the formation thereof |
| WO2009081723A1 (ja) * | 2007-12-20 | 2009-07-02 | Fuji Electric Device Technology Co., Ltd. | 半導体装置およびその製造方法 |
| JP2010082673A (ja) | 2008-10-01 | 2010-04-15 | Fuji Electric Systems Co Ltd | レーザ溶接部材およびレーザ溶接方法 |
| JP5062217B2 (ja) * | 2009-04-30 | 2012-10-31 | 株式会社Ｓｕｍｃｏ | 半導体ウェーハの製造方法 |
| JP2012125775A (ja) | 2010-12-13 | 2012-07-05 | Mitsubishi Heavy Ind Ltd | レーザ溶接装置 |
| JP5803606B2 (ja) | 2011-11-21 | 2015-11-04 | 新日鐵住金株式会社 | 電縫管の製造方法及びローレット加工治具 |
| KR20130070392A (ko) | 2011-12-19 | 2013-06-27 | 주식회사 성우하이텍 | 레이저 용접용 지그장치 |
| JP2013237053A (ja) | 2012-05-11 | 2013-11-28 | Trumpf Kk | 亜鉛めっき鋼板の溶接方法 |
| JP5533983B2 (ja) | 2012-11-12 | 2014-06-25 | 富士電機株式会社 | 半導体装置 |
| JP6354415B2 (ja) | 2013-08-14 | 2018-07-11 | 富士電機株式会社 | レーザ溶接機とそれを用いたレーザ溶接方法 |
| JP2015119072A (ja) * | 2013-12-19 | 2015-06-25 | 富士電機株式会社 | レーザ溶接方法、レーザ溶接治具、半導体装置 |
| JP6634778B2 (ja) | 2015-11-06 | 2020-01-22 | 富士電機株式会社 | 半導体装置及びその製造方法 |
| JP6750416B2 (ja) * | 2016-09-14 | 2020-09-02 | 富士電機株式会社 | 半導体モジュールおよび半導体モジュールの製造方法 |
| KR102090787B1 (ko) | 2017-01-11 | 2020-03-18 | 주식회사 엘지화학 | 레이저 용접용 지그 어셈블리 |
| CN109559994B (zh) * | 2017-09-26 | 2024-05-10 | 江苏高凯精密流体技术股份有限公司 | 一种锡球排序分离装置 |
| KR102395306B1 (ko) | 2017-12-15 | 2022-05-09 | 현대자동차주식회사 | 레이저 융착 장치 |
-
2020
- 2020-03-10 JP JP2020041099A patent/JP7562965B2/ja active Active
-
2021
- 2021-01-25 CN CN202110096415.3A patent/CN113380684B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008305902A (ja) * | 2007-06-06 | 2008-12-18 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113380684A (zh) | 2021-09-10 |
| JP7562965B2 (ja) | 2024-10-08 |
| JP2021144984A (ja) | 2021-09-24 |
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