CN112930605B - 半导体结构及其制备方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 9
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- 125000004429 atom Chemical group 0.000 description 12
- 229910052594 sapphire Inorganic materials 0.000 description 3
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- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
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- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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Abstract
一种半导体结构,包括:衬底(1);位于所述衬底(1)之上的成核层(3);位于所述成核层(3)与所述衬底(1)之间的金属氮化物薄膜(2);通过在衬底(1)与成核层(3)之间沉积金属氮化物薄膜(2),抑制了衬底(1)材料中原子的扩散,使成核层(3)的厚度显著降低,降低半导体结构的总热阻。
Description
技术领域
本发明涉及半导体电子技术领域,特别是涉及一种半导体结构及其制备方法。
背景技术
半导体领域中,在一些衬底上制备薄膜层时,例如Si衬底上制备Ⅲ族氮化物(例如GaN)时,由于Ⅲ族氮化物在Si衬底表面浸润性差、晶格失配等问题,很难获得高质量的Ⅲ族氮化物外延层。目前通常采用的方法为在Si衬底上优先沉积一层成核层(例如AlN),然后再生长Ⅲ族氮化物,以得到高质量的晶体结构。
发明内容
发明人发现现有技术中至少存在如下问题:由于成核层的材料(例如AlN)本身晶体生长质量较差,因此会极大降低该成核层材料的导热系数,进而增加整个器件的热阻。而为了减少器件的热阻,最简单的方法就是减薄成核层的厚度,即在导热系数无法增加的情况下,通过降低成核层的厚度来减少总的热阻。但是,由于衬底中会存在某些原子的扩散(例如Si衬底中Si原子的扩散,蓝宝石衬底中O原子的扩散),在没有一定厚度的成核层起到抑制扩散作用的情况下,就会有大量衬底中的原子扩散至成核层上制备的半导体外延层中,从而造成外延层漏电,降低器件的击穿电压。
有鉴于此,本发明的一实施例提供了一种半导体结构,包括:
衬底;
位于所述衬底之上的成核层;
位于所述成核层与所述衬底之间的金属氮化物薄膜,所述金属氮化物薄膜包括Fe、Mg、Cu、Zn、Mn、Mo中的一种或多种的氮化物及其组合。
在一实施例中,所述金属氮化物薄膜的厚度可至少为0.1个原子层。
在一实施例中,成核层的厚度可不大于100nm。
在一实施例中,成核层为AlN,或者是AlN与Fe,Mg,Cu,Zn,Mn,Mo中的一种或多种元素形成的合金。
在一实施例中,所述半导体结构还可包括位于成核层之上的外延层。
在一实施例中,外延层可为Ⅲ族氮化物。
在一实施例中,衬底可为含Si原子的单质,或者,为含Si或O原子的化合物。
除此之外,本发明还提供了一种半导体结构的制备方法,包括如下步骤:提供衬底;在衬底上沉积金属氮化物薄膜,其中所述金属氮化物薄膜包括Fe、Mg、Cu、Zn、Mn、Mo中的一种或多种的氮化物及其组合;在金属氮化物薄膜上沉积成核层。
在一实施例中,所述金属氮化物薄膜由金属和氨气反应生成。
在一实施例中,所述金属氮化物薄膜的厚度可至少为0.1个原子层。
在一实施例中,成核层的厚度可不大于100nm。
在一实施例中,成核层为AlN,或者是AlN与Fe,Mg,Cu,Zn,Mn,Mo中的一种或多种元素形成的合金。
在一实施例中,所述制备方法还可包括:在成核层上生长外延层。
在一实施例中,外延层可为Ⅲ族氮化物。
在一实施例中,所述衬底可为含Si原子的单质,或者,为含Si或O原子的化合物。
本发明的有益效果在于:本发明的半导体结构中设有金属氮化物薄膜,其具有较高的致密度,能够有效抑制衬底材料中原子的扩散,显著降低成核层的厚度,以减少半导体结构的总热阻,更有效解决外延层漏电的问题,通过沉积该金属氮化物薄膜能够制备得到具有优异性能的超薄半导体结构。
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,并可依照说明书的内容予以实施,以下以本发明的较佳实施例并配合附图详细说明如后。
附图说明
图1为本发明一实施例提供的一种半导体结构的结构示意图。
图2为原子部分覆盖某一半导体层表面的截面示意图。
具体实施方式
下面结合附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。
所用术语“在…之上”、“在…上”、“在…之间”可以指一层相对于其它层的相对位置。着于清楚说明的目的,附图中所示出的每个层的厚度和尺寸可能被放大、省略或示意性地绘制。此外,元件的尺寸不完全反映实际尺寸。
如图1所示,图1为本发明一实施例提供的一种半导体结构的示意图,金属氮化物薄膜2与成核层3依次层叠于衬底1之上。
衬底1包括含Si原子的单质,或者,包括含Si或O原子的化合物,如Si衬底、SiC衬底、石英(SiO2)衬底、MgO衬底、蓝宝石(Al2O3)衬底等,可以是其中的一种或多种的组合。
金属氮化物薄膜2由致密度较好的金属氮化物组成,较佳地为Fe、Mg、Cu、Zn、Mn、Mo等金属中的一种或多种的氮化物及其组合。
金属氮化物薄膜2较薄时,可只在衬底1表面沉积一层原子层,且该单层原子层可不将衬底1表面全部覆盖,如图2所示,图2为原子部分覆盖某一半导体层表面的截面示意图。如衬底1表面的50%被单层原子覆盖则定义为金属氮化物薄膜2的厚度为0.5个原子层,衬底1表面全部被单层原子层覆盖则定义为金属氮化物薄膜2的厚度为1个原子层,衬底1表面全部被两层原子层覆盖则定义为金属氮化物薄膜2的厚度为2个原子层,依次类推。本实施例中金属氮化物薄膜2的厚度可至少为0.1个原子层。
成核层3包括Ⅲ族氮化物,优选的为AlN或者为AlN和Fe,Mg,Cu,Zn,Mn,Co等元素中的一个或多个形成的合金。
如图1所示,在成核层3之上可以制备外延层4。其中外延层4可为Ⅲ族氮化物,较佳地为GaN基材料,即至少包含Ga原子和N原子的材料,可包括GaN、AlGaN、InGaN、AlInGaN的一种或多种的组合。Ⅲ族氮化物具有较宽的能带带隙、高电子饱和漂移速度、耐高温、大功率容量等优良特性,被广泛地应用于半导体器件的制备中。
金属氮化物薄膜2能够有效抑制衬底材料中Si原子和O原子的扩散,从而可以显著降低成核层的厚度,以减少半导体结构的总热阻;更有效解决:Si原子和O原子扩散到外延层中所引起外延层漏电及击穿电压降低的问题。通过沉积该金属氮化物薄膜能够制备得到具有优异性能的超薄半导体结构。
本发明另一实施例还公开了一种半导体结构的制备方法,包括以下步骤:
S1、提供衬底1;
S2、在衬底1上沉积金属氮化物薄膜2;
S3、在金属氮化物薄膜2上沉积成核层3;
S4、在成核层3上生长外延层4。
衬底1包括含Si原子的单质,或者,包括含Si或O原子的化合物,如Si衬底、SiC衬底、石英(SiO2)衬底、MgO衬底、蓝宝石(Al2O3)衬底中的一种或多种的组合。
金属氮化物薄膜2由致密度较好的金属氮化物组成,较佳地为Fe、Mg、Cu、Zn、Mn、Mo等金属中的一种或多种的氮化物组合。金属氮化物薄膜的厚度可至少为0.1个原子层。
其中S2、在衬底1上沉积金属氮化物薄膜2中,金属氮化物薄膜2可以是由金属和氨气反应生成的,例如:先在衬底1上沉积金属薄膜;通入氨气,形成金属氮化物薄膜2。当然,该顺序也可根据设计需求进行调整:同时通入金属源和氨气,形成金属氮化物薄膜2;或者交替通入氨气和金属源,形成金属氮化物薄膜2;或者先通入氨气再通入金属源,形成金属氮化物薄膜2。
成核层3包括Ⅲ族氮化合物,优选的为成核层为AlN,或者是AlN与Fe,Mg,Cu,Zn,Mn,Mo中的一种或多种元素形成的合金。
其中外延层4可为Ⅲ族氮化物,较佳的可为GaN基材料,即至少包含Ga原子和N原子的材料,可包括GaN、AlGaN、InGaN、AlInGaN的一种或多种的组合。
以上所述实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。
Claims (9)
1.一种半导体结构,其特征在于,包括:
衬底;
位于所述衬底之上的成核层;
位于所述成核层与所述衬底之间的金属氮化物薄膜,所述金属氮化物薄膜包括Fe、Cu、Zn、Mn、Mo中的一种或多种的氮化物及其组合,其中,所述金属氮化物薄膜至少为0.1个原子层,所述成核层的厚度不大于100nm,所述衬底为含Si或O原子中的一种或多种的单质或化合物。
2.根据权利要求1所述的半导体结构,其特征在于,所述成核层为AlN,或者是AlN与Fe,Mg,Cu,Zn,Mn,Mo中的一种或多种元素形成的合金。
3.根据权利要求1所述的半导体结构,其特征在于,所述半导体结构还包括位于所述成核层之上的外延层。
4.根据权利要求3所述的半导体结构,其特征在于,所述外延层为Ⅲ族氮化物。
5.一种半导体结构的制备方法,其特征在于,包括如下步骤:
提供衬底;
在所述衬底上沉积金属氮化物薄膜,其中所述金属氮化物薄膜包括Fe、Cu、Zn、Mn、Mo中的一种或多种的氮化物及其组合;
在所述金属氮化物薄膜上沉积成核层;
在所述成核层上生长外延层,其中,
所述金属氮化物薄膜至少为0.1个原子层,所述成核层的厚度不大于100nm,所述衬底为含Si或O原子中的一种或多种的单质或化合物。
6.根据权利要求5所述的制备方法,其特征在于,所述金属氮化物薄膜由金属和氨气反应生成。
7.根据权利要求5所述的制备方法,其特征在于,所述成核层为AlN,或者是AlN与Fe,Mg,Cu,Zn,Mn,Mo中的一种或多种元素形成的合金。
8.根据权利要求5所述的制备方法,其特征在于,所述半导体结构还包括位于所述成核层之上的外延层。
9.根据权利要求5所述的制备方法,其特征在于,所述外延层为Ⅲ族氮化物。
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