CN104733511A - 一种在硅衬底上生长的氮化镓外延结构 - Google Patents
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 239000010703 silicon Substances 0.000 title claims abstract description 34
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 15
- 238000000407 epitaxy Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
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- 238000009792 diffusion process Methods 0.000 abstract description 2
- 230000027756 respiratory electron transport chain Effects 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
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- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- -1 when melting down Inorganic materials 0.000 description 1
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Abstract
一种在硅衬底上生长的氮化镓外延结构，包括硅衬底，该硅衬底上从下至上依次生长有AlN成核层，渐变AlXGa1-XN缓冲层，周期性GaN/AlGaN超晶格插入层，氮化镓层。本发明提供的这种氮化镓外延结构能够有效的阻止Si原子从衬底层扩散到GaN层中，减少了氮化镓外延层中的位错等缺陷密度，提高了半绝缘GaN的晶体质量和表面形貌，优化了生长工艺，降低了生长成本，提高了产品的良率。此外，该半绝缘氮化镓基高电子迁移率晶体管（HEMTs）具有更高的电子迁移速率、高功率密度等优点。
Description
技术领域
本发明涉及半导体技术领域，尤其涉及一种在硅衬底上生长的氮化镓外延结构。
背景技术
GaN具有较大的直接禁带宽度（3.4ev）、高热导率、高电子饱和漂移速度等特点，因此已经成为目前半导体技术领域的研究热点。特别地，氮化镓基高电子迁移率场效应晶体管（HEMT）是一种基于氮化物异质结构的新型电子器件。该器件具有高频、大功率的优异特性，广泛应用于无线通信基站、电力电子器件等信息收发、能量转换等领域。
由于AlGaN/GaN异质结构击穿电压大，因极化可产生高浓度二维电子气（2DEG），并具有很高的电子迁移率，因此在微波功率器件应用方面引起了广泛关注。如有时氮化镓晶体管的基板和有源器件之间的隔离电压超过300V，此时一高阻GaN层作为隔离层，这样使得氮化镓晶体管与底层绝缘，这种方法能以单片方式制造出任何结构的多个晶体管器件，并且本身就具有高效通用的散热机制，在器件和散热器之间不需要绝缘层，同时也减少漏电流，提高了AlGaN/GaN HEMT器件的功率密度及其高温、高频性能。因此在器件材料结构中外延生长高阻GaN层是十分必要的。
目前主要采用异质外延生长的办法在蓝宝石、SiC等衬底材料生长GaN外延层及器件。但是这两种衬底价格昂贵，而且这两种衬底的尺寸都比较小，增加了器件的制作成本。此外，蓝宝石衬底还有硬度极高，导电差，导热差等特点，对器件的制作和性能不利。Si作为目前最成熟的半导体材料，具有价格便宜，尺寸大，晶体质量高，导热能力好等优点，用Si作为外延层的衬底可大大降低器件的制作成本，提高经济效益。
但是，在Si衬底上生长一高阻厚膜GaN层的一个主要问题是在生长的过程中，特别是刚开始生长过程中，衬底上的Si原子会扩散到GaN层中，增加了Si施主的浓度，降低GaN的绝缘性，同时回炉时Ga原子会扩散到Si衬底上形成合金，并且Si原子会与N原子形成SixNy非晶薄膜，SixNy会阻止GaN在Si衬底表面的沉积，降低GaN的质量和表面形貌。
在硅衬底上生长高质量的GaN厚膜，超晶格结构因为能够消除应力和阻挡穿透位错被看作是有效的生长结构。目前主要采用而AlN/GaN超晶格层缓冲层的方法也有存在的问题，由于直接在Si衬底上生长超晶格比较困难，这样超晶格缓冲层的作用也比较微弱，也不能在很大程度上阻止Si原子以及Ga原子的扩散。
发明内容
本发明的目是提供一种在硅衬底上生长的氮化镓外延结构，该结构能有效的消除应力和阻挡穿透位错，阻止Si原子扩散到GaN层，并减少GaN层裂纹的形成。
本发明采用以下技术方案予以实现：一种在硅衬底上生长的氮化镓外延结构，从下到上依次包括硅衬底层，氮化铝成核层，渐变AlXGa1-XN缓冲层，周期性GaN/AlGaN超晶格插入层，氮化镓层。
优选地，所述硅衬底为硅（111）衬底。
优选地，所述AlN成核层的生长温度为1020-1060℃，厚度为95-350nm优选地，所述渐变AlXGa1-XN缓冲层中Al摩尔含量从下至上由0渐变到X，X为0.08-0.4。
优选地，所述缓冲层AlXGa1-XN的厚度为200-1000nm。
优选地，所述周期性GaN/AlGaN超晶格插入层的生长温度为1000-1300℃，生长周期为5-100，每周期生长GaN的厚度为1-20nm，AlGaN的厚度为1-20nm。
优选地，所述氮化镓层的厚度为0.5-3μm。
本发明的有益效果：本发明提供的这种氮化镓外延结构能够有效的阻止Si原子从衬底层扩散到GaN层中，减少了氮化镓外延层中的位错等缺陷密度，提高了半绝缘GaN的晶体质量和表面形貌，优化了生长工艺，降低了生长成本，提高了产品的良率。此外，该半绝缘氮化镓基高电子迁移率晶体管（HEMTs）具有更高的电子迁移速率、高功率密度等优点。
附图说明
图1为本发明所述的在硅衬底上生长的氮化镓外延结构示意图。
具体实施方式
下面结合附图和具体的实施例，进一步阐明本发明，应理解这些实施例仅用于说明本发明而不用于限制本发明的范围，在阅读了本发明之后，本领域技术人员对本发明的各种等价形式的修改均在本申请所附权利要求所限定的范围。
实施例1
如图1所示，一种在硅衬底上生长的氮化镓外延结构，它是在硅衬底101上通过MOCVD技术依次生长Al金属层102、AlN成核层103、渐变AlXGa1-XN缓冲层104、GaN/AlGaN超晶格插入层105、氮化镓层106，具体如下：选择硅（111）衬底101，利用MOCVD技术生长；将硅衬底101在1060℃的H2环境中表面处理5分钟；温度保持不变，在硅衬底101衬底上生长一铝金属层102；在铝金属层102表面生长一厚度为0.3um 的AlN成核层103；在AlN成核层103上生长一厚度为0.2um且组分渐变的AlXGa1-XN缓冲层104，Al组分X从下到上由0渐变到0.09；在AlXGa1-XN缓冲层104上生长一层周期性GaN/AlGaN超晶格插入层105，生长厚度分别为3nm/6nm，生长周期为30；在周期性GaN/AlGaN超晶格插入层105上生长一厚度为1.2um的氮化镓层106；关闭气体并降至室温。
实施例2
一种在硅衬底上生长的氮化镓外延结构，它是在硅衬底上通过MOCVD技术依次生长Al金属层、AlN成核层、渐变的AlxGa1-XN缓冲层、周期性GaN/AlGaN超晶格插入层、氮化镓层，具体如下：选择硅（111）衬底，利用MOCVD技术生长；将硅衬底101在1020℃的H2环境中表面处理5分钟；温度保持不变，在硅衬底衬底上生长一铝金属层；在铝金属层表面生长一厚度为0.15um 的AlN成核层；在AlN成核层上生长一厚度为0.3um且组分渐变的AlXGa1-XN缓冲层，Al组分X从下到上由0渐变到0.25；在AlXGa1-XN缓冲层上生长一层周期性GaN/AlGaN超晶格插入层，生长厚度分别为8nm/12nm，生长周期为20；在周期性GaN/AlGaN超晶格插入层上生长一厚度为1.3um的氮化镓层；关闭气体并降至室温。
Claims (7)
1.一种在硅衬底上生长的氮化镓外延结构，其特征在于：从下到上依次包括硅衬底层，氮化铝成核层，渐变AlXGa1-XN缓冲层，周期性GaN/AlGaN超晶格插入层，氮化镓层。
2.根据权利要求1所述一种在硅衬底上生长的氮化镓外延结构，其特征在于：所述硅衬底为硅（111）衬底。
3.根据权利要求1所述一种在硅衬底上生长的氮化镓外延结构，其特征在于：所述AlN成核层的生长温度为1020-1060℃，厚度为95-350nm。
4.根据权利要求1所述一种在硅衬底上生长的氮化镓外延结构，其特征在于：所述渐变AlXGa1-XN缓冲层中Al摩尔含量从下至上由0渐变到X，X为0.08-0.4。
5.根据权利要求1或4所述一种在硅衬底上生长的氮化镓外延结构，其特征在于：所述缓冲层AlXGa1-XN的厚度为200-1000nm。
6.根据权利要求1所述一种在硅衬底上生长的氮化镓外延结构，其特征在于：所述周期性GaN/AlGaN超晶格的生长温度为1000-1300℃，生长周期为5-100，每周期生长GaN的厚度为1-20nm，AlGaN的厚度为1-20nm。
7.根据权利要求1所述一种在硅衬底上生长的氮化镓外延结构，其特征在于：所述氮化镓外延层的厚度为0.5-3μm。
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| CN112670164A (zh) * | 2020-12-24 | 2021-04-16 | 南京百识电子科技有限公司 | 一种氮化镓外延底层超晶格的生长方法 |
| CN112930605A (zh) * | 2018-09-07 | 2021-06-08 | 苏州晶湛半导体有限公司 | 半导体结构及其制备方法 |
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| CN107068750B (zh) * | 2016-12-31 | 2024-04-19 | 华南理工大学 | 一种基于Si衬底的GaN基高压HEMT器件外延结构及其制造方法 |
| CN106981415A (zh) * | 2017-04-19 | 2017-07-25 | 华南理工大学 | GaN高电子迁移率晶体管的氮化镓薄膜及其纳米外延过生长方法 |
| CN112930605A (zh) * | 2018-09-07 | 2021-06-08 | 苏州晶湛半导体有限公司 | 半导体结构及其制备方法 |
| CN112670164A (zh) * | 2020-12-24 | 2021-04-16 | 南京百识电子科技有限公司 | 一种氮化镓外延底层超晶格的生长方法 |
| CN112670164B (zh) * | 2020-12-24 | 2023-01-24 | 南京百识电子科技有限公司 | 一种氮化镓外延底层超晶格的生长方法 |
| CN113725331A (zh) * | 2021-08-11 | 2021-11-30 | 广州市众拓光电科技有限公司 | 一种硅基led外延结构及其生长方法 |
| CN113725331B (zh) * | 2021-08-11 | 2024-04-26 | 广州市众拓光电科技有限公司 | 一种硅基led外延结构及其生长方法 |
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