CN112930605A - 半导体结构及其制备方法 - Google Patents

半导体结构及其制备方法 Download PDF

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CN112930605A
CN112930605A CN201880097216.0A CN201880097216A CN112930605A CN 112930605 A CN112930605 A CN 112930605A CN 201880097216 A CN201880097216 A CN 201880097216A CN 112930605 A CN112930605 A CN 112930605A
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substrate
semiconductor structure
metal nitride
nucleation layer
layer
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CN112930605B (zh
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程凯
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Wuxi Jingzhan Semiconductor Co ltd
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Enkris Semiconductor Inc
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    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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Abstract

一种半导体结构，包括：衬底(1)；位于所述衬底(1)之上的成核层(3)；位于所述成核层(3)与所述衬底(1)之间的金属氮化物薄膜(2)；通过在衬底(1)与成核层(3)之间沉积金属氮化物薄膜(2)，抑制了衬底(1)材料中原子的扩散，使成核层(3)的厚度显著降低，降低半导体结构的总热阻。

Description

PCT国内申请，说明书已公开。

Claims (15)

  1. PCT国内申请，权利要求书已公开。
CN201880097216.0A 2018-09-07 2018-09-07 半导体结构及其制备方法 Active CN112930605B (zh)

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PCT/CN2018/104491 WO2020047814A1 (zh) 2018-09-07 2018-09-07 半导体结构及其制备方法

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US (1) US11361963B2 (zh)
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WO (1) WO2020047814A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101509144A (zh) * 2009-02-24 2009-08-19 上海蓝光科技有限公司 一种提高铝酸锂衬底上非极性a面GaN薄膜质量的方法
CN104733511A (zh) * 2013-12-21 2015-06-24 江西省昌大光电科技有限公司 一种在硅衬底上生长的氮化镓外延结构
US20160284787A1 (en) * 2015-03-24 2016-09-29 International Business Machines Corporation High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
WO2018002497A1 (fr) * 2016-06-28 2018-01-04 Commissariat à l'énergie atomique et aux énergies alternatives Structure de nucleation adaptee a la croissance epitaxiale d'elements semiconducteurs tridimensionnels

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US6440851B1 (en) * 1999-10-12 2002-08-27 International Business Machines Corporation Method and structure for controlling the interface roughness of cobalt disilicide
FI20045482A0 (fi) * 2004-12-14 2004-12-14 Optogan Oy Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi
CN100585891C (zh) * 2006-12-29 2010-01-27 上海蓝光科技有限公司 发光二极管的出光结构及其制作方法
US20090321787A1 (en) * 2007-03-20 2009-12-31 Velox Semiconductor Corporation High voltage GaN-based heterojunction transistor structure and method of forming same
TWI380368B (en) * 2009-02-04 2012-12-21 Univ Nat Chiao Tung Manufacture method of a multilayer structure having non-polar a-plane {11-20} iii-nitride layer
JP5425284B1 (ja) * 2012-09-21 2014-02-26 株式会社東芝 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法
US9754791B2 (en) * 2015-02-07 2017-09-05 Applied Materials, Inc. Selective deposition utilizing masks and directional plasma treatment
WO2018112295A1 (en) * 2016-12-16 2018-06-21 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Selective oxidation of transition metal nitride layers within compound semiconductor device structures
US11286558B2 (en) * 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101509144A (zh) * 2009-02-24 2009-08-19 上海蓝光科技有限公司 一种提高铝酸锂衬底上非极性a面GaN薄膜质量的方法
CN104733511A (zh) * 2013-12-21 2015-06-24 江西省昌大光电科技有限公司 一种在硅衬底上生长的氮化镓外延结构
US20160284787A1 (en) * 2015-03-24 2016-09-29 International Business Machines Corporation High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
WO2018002497A1 (fr) * 2016-06-28 2018-01-04 Commissariat à l'énergie atomique et aux énergies alternatives Structure de nucleation adaptee a la croissance epitaxiale d'elements semiconducteurs tridimensionnels

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US20200350162A1 (en) 2020-11-05
WO2020047814A1 (zh) 2020-03-12
US11361963B2 (en) 2022-06-14

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Address after: No. 108, Furong Middle Road, Xishan Economic and Technological Development Zone, Xishan District, Wuxi City, Jiangsu Province, 214000

Patentee after: Wuxi JingZhan Semiconductor Co.,Ltd.

Address before: Room 517-a, building 20, Northwest District, No. 99, Jinjihu Avenue, Suzhou Industrial Park, Suzhou City, Jiangsu Province

Patentee before: ENKRIS SEMICONDUCTOR, Inc.