CN112913094B - 垂直谐振器式发光元件 - Google Patents

垂直谐振器式发光元件 Download PDF

Info

Publication number
CN112913094B
CN112913094B CN201980068659.1A CN201980068659A CN112913094B CN 112913094 B CN112913094 B CN 112913094B CN 201980068659 A CN201980068659 A CN 201980068659A CN 112913094 B CN112913094 B CN 112913094B
Authority
CN
China
Prior art keywords
layer
semiconductor layer
region
light emitting
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980068659.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN112913094A (zh
Inventor
仓本大
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Publication of CN112913094A publication Critical patent/CN112913094A/zh
Application granted granted Critical
Publication of CN112913094B publication Critical patent/CN112913094B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18338—Non-circular shape of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN201980068659.1A 2018-10-18 2019-10-07 垂直谐振器式发光元件 Active CN112913094B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018196393A JP7190865B2 (ja) 2018-10-18 2018-10-18 垂直共振器型発光素子
JP2018-196393 2018-10-18
PCT/JP2019/039455 WO2020080160A1 (ja) 2018-10-18 2019-10-07 垂直共振器型発光素子

Publications (2)

Publication Number Publication Date
CN112913094A CN112913094A (zh) 2021-06-04
CN112913094B true CN112913094B (zh) 2024-06-11

Family

ID=70283213

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980068659.1A Active CN112913094B (zh) 2018-10-18 2019-10-07 垂直谐振器式发光元件

Country Status (5)

Country Link
US (2) US12308614B2 (enExample)
EP (1) EP3869643B1 (enExample)
JP (1) JP7190865B2 (enExample)
CN (1) CN112913094B (enExample)
WO (1) WO2020080160A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7190865B2 (ja) 2018-10-18 2022-12-16 スタンレー電気株式会社 垂直共振器型発光素子
JP7166871B2 (ja) 2018-10-18 2022-11-08 スタンレー電気株式会社 垂直共振器型発光素子
JP7291497B2 (ja) * 2019-02-21 2023-06-15 スタンレー電気株式会社 垂直共振器型発光素子
US11757253B2 (en) * 2020-05-21 2023-09-12 Lumentum Operations Llc Vertical cavity surface emitting laser with active layer-specific addressability
US12489273B2 (en) * 2022-11-07 2025-12-02 Ii-Vi Delaware, Inc. Vertical cavity surface emitting laser (VCSEL) emitter with guided-antiguided waveguide
CN117712830B (zh) * 2024-02-05 2024-04-30 南昌凯迅光电股份有限公司 一种垂直腔面发射激光器及其制作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6403983B1 (en) * 1999-04-15 2002-06-11 Daido Tokushuko Kabushiki Kaisha Quantum well type light-emitting diode
CN1627576A (zh) * 2003-10-28 2005-06-15 索尼株式会社 表面发光半导体激光器及其制造方法和光学装置
CN101136538A (zh) * 2006-08-31 2008-03-05 富士施乐株式会社 Vcsel、其制造方法、模块、光发送装置、光空间传输装置、光发送系统以及光空间传输系统
CN101510665A (zh) * 2008-02-13 2009-08-19 富士施乐株式会社 激光器、模块、光传输装置和系统、光通信装置和系统
JP2011205006A (ja) * 2010-03-26 2011-10-13 Furukawa Electric Co Ltd:The 半導体レーザ素子およびその製造方法
JP2017098328A (ja) * 2015-11-19 2017-06-01 学校法人 名城大学 垂直共振器型発光素子

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1095096A (en) 1910-08-16 1914-04-28 Ferdinand J H Fleck Film-winding apparatus.
JPS53140883A (en) 1977-05-16 1978-12-08 Terumo Corp Urinary output monitor
US5058120A (en) 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
JP3395194B2 (ja) 1990-09-12 2003-04-07 セイコーエプソン株式会社 面発光型半導体レーザ
US5625637A (en) 1991-03-28 1997-04-29 Seiko Epson Corporation Surface emitting semiconductor laser and its manufacturing process
JPH0918084A (ja) * 1995-06-26 1997-01-17 Seiko Epson Corp 面発光型半導体レーザ及びその製造方法
US5594751A (en) 1995-06-26 1997-01-14 Optical Concepts, Inc. Current-apertured vertical cavity laser
DE69633203T2 (de) 1995-09-18 2005-09-01 Hitachi, Ltd. Halbleiterlaservorrichtungen
JPH11121864A (ja) 1997-10-08 1999-04-30 Seiko Epson Corp 面発光レーザ及びその製造方法
US5915165A (en) * 1997-12-15 1999-06-22 Xerox Corporation Method of manufacturing vertical cavity surface emitting semiconductor lasers using intermixing and oxidation
JP2000196189A (ja) 1998-12-24 2000-07-14 Toshiba Corp 面発光型半導体レーザ
US6376269B1 (en) * 1999-02-02 2002-04-23 Agilent Technologies, Inc. Vertical cavity surface emitting laser (VCSEL) using buried Bragg reflectors and method for producing same
US6751245B1 (en) * 1999-06-02 2004-06-15 Optical Communication Products, Inc. Single mode vertical cavity surface emitting laser
US6507595B1 (en) * 1999-11-22 2003-01-14 Avalon Photonics Vertical-cavity surface-emitting laser comprised of single laser elements arranged on a common substrate
US6396865B1 (en) * 2000-10-27 2002-05-28 Wisconsin Alumni Research Foundation Vertical-cavity surface-emitting lasers with antiresonant reflecting optical waveguides
KR100384598B1 (ko) * 2000-11-29 2003-05-22 주식회사 옵토웰 질화물반도체 수직공진 표면발광 레이저
KR100345452B1 (ko) 2000-12-14 2002-07-26 한국전자통신연구원 상부거울층 양단부에 확산영역을 구비하는 장파장표면방출 레이저 소자 및 그 제조 방법
US6546029B2 (en) 2001-03-15 2003-04-08 Ecole Polytechnique Federale De Lausanne Micro-electromechanically tunable vertical cavity photonic device and a method of fabrication thereof
US6589805B2 (en) 2001-03-26 2003-07-08 Gazillion Bits, Inc. Current confinement structure for vertical cavity surface emitting laser
JP2003163373A (ja) 2001-11-26 2003-06-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6515308B1 (en) 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
AU2003256382A1 (en) * 2002-07-06 2004-01-23 Optical Communication Products, Inc. Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength vcsel
JP3857632B2 (ja) * 2002-09-27 2006-12-13 株式会社東芝 垂直共振器型面発光レーザ素子
US20040179566A1 (en) 2003-03-11 2004-09-16 Aharon El-Bahar Multi-color stacked semiconductor lasers
JP2004288674A (ja) * 2003-03-19 2004-10-14 Fuji Xerox Co Ltd 面発光型半導体レーザおよびそれを用いた光通信システム
US7542499B2 (en) * 2003-11-27 2009-06-02 Ricoh Company, Ltd. Surface-emission laser diode and surface-emission laser array, optical interconnection system, optical communication system, electrophotographic system, and optical disk system
JP2005197426A (ja) 2004-01-07 2005-07-21 Yokogawa Electric Corp 面発光レーザ
JP4602685B2 (ja) * 2004-04-14 2010-12-22 株式会社リコー 垂直共振器型面発光半導体レーザ素子および発光装置および光伝送システム
JP4602692B2 (ja) 2004-04-23 2010-12-22 株式会社リコー 面発光レーザ及び光伝送システム
US20190245318A1 (en) * 2004-10-29 2019-08-08 Ronald LaComb Concentric Cylindrical Circumferential Laser
US7693203B2 (en) * 2004-11-29 2010-04-06 Alight Photonics Aps Single-mode photonic-crystal VCSELs
JP2006245379A (ja) 2005-03-04 2006-09-14 Stanley Electric Co Ltd 半導体発光素子
US20070025407A1 (en) 2005-07-29 2007-02-01 Koelle Bernhard U Long-wavelength VCSEL system with heat sink
JP4548329B2 (ja) * 2005-12-19 2010-09-22 セイコーエプソン株式会社 面発光型半導体レーザ
JP4548345B2 (ja) 2006-01-12 2010-09-22 セイコーエプソン株式会社 面発光型半導体レーザ
JPWO2007116659A1 (ja) 2006-03-23 2009-08-20 日本電気株式会社 面発光レーザ
JP5228363B2 (ja) 2007-04-18 2013-07-03 ソニー株式会社 発光素子
JP2009038310A (ja) * 2007-08-03 2009-02-19 Sumitomo Electric Ind Ltd 面発光型半導体光デバイス
JP2009170508A (ja) * 2008-01-11 2009-07-30 Furukawa Electric Co Ltd:The 面発光半導体レーザ及びその製造方法
WO2009119172A1 (ja) 2008-03-28 2009-10-01 日本電気株式会社 面発光レーザ
JP5006242B2 (ja) 2008-03-31 2012-08-22 古河電気工業株式会社 面発光半導体レーザ素子
US8030666B2 (en) 2008-04-16 2011-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Group-III nitride epitaxial layer on silicon substrate
JP2009266919A (ja) * 2008-04-23 2009-11-12 Sony Corp 面発光型半導体レーザおよびその製造方法
GB0817786D0 (en) 2008-09-30 2008-11-05 Bookham Technology Plc Improved vertical cavity surface emitting laser
JP5521478B2 (ja) 2008-10-22 2014-06-11 日亜化学工業株式会社 窒化物半導体発光素子の製造方法及び窒化物半導体発光素子
US8488644B2 (en) * 2008-12-10 2013-07-16 Furukawa Electric Co., Ltd. Semiconductor laser element and manufacturing method thereof
KR101834015B1 (ko) 2009-02-11 2018-04-13 덴마크스 텍니스케 유니버시테트 하이브리드 수직공진 레이저
JP5707742B2 (ja) 2009-06-30 2015-04-30 日亜化学工業株式会社 垂直共振器型面発光レーザ
JP5633435B2 (ja) 2011-03-09 2014-12-03 日亜化学工業株式会社 面発光レーザ素子
EP2533380B8 (en) * 2011-06-06 2017-08-30 Mellanox Technologies, Ltd. High speed lasing device
US8731012B2 (en) 2012-01-24 2014-05-20 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser and its manufacturing method, surface emitting semiconductor laser device, optical transmitter, and information processor
EP2878045B1 (en) * 2012-07-27 2020-01-08 Thorlabs, Inc. Polarization stable widely tunable short cavity laser
US20170093128A1 (en) 2014-03-04 2017-03-30 Hewlett Packard Enterprise Development Lp Vertical-cavity surface-emitting lasers
JP6566034B2 (ja) 2015-07-28 2019-08-28 ソニー株式会社 発光素子
JP6700027B2 (ja) 2015-11-20 2020-05-27 スタンレー電気株式会社 垂直共振器型発光素子
JP6990499B2 (ja) 2016-04-18 2022-01-12 スタンレー電気株式会社 垂直共振器型発光素子及び垂直共振型発光素子の製造方法
JP2018073853A (ja) * 2016-10-24 2018-05-10 スタンレー電気株式会社 反射鏡、垂直共振器型発光装置及びその製造方法
DE112017005532T5 (de) 2016-11-02 2019-07-25 Sony Corporation Lichtemittierendes element und verfahren zu seiner herstellung
JP6966843B2 (ja) 2017-02-08 2021-11-17 スタンレー電気株式会社 垂直共振器型発光素子
JP6932345B2 (ja) 2017-03-27 2021-09-08 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子
CN106848838B (zh) 2017-04-06 2019-11-29 中国科学院半导体研究所 基于多孔DBR的GaN基VCSEL芯片及制备方法
US10681474B2 (en) 2017-09-19 2020-06-09 Vocalzoom Systems Ltd. Laser-based devices utilizing improved self-mix sensing
JP7039905B2 (ja) 2017-09-21 2022-03-23 富士フイルムビジネスイノベーション株式会社 発光部品の製造方法
JP6369613B1 (ja) 2017-09-21 2018-08-08 富士ゼロックス株式会社 発光部品、プリントヘッド及び画像形成装置
EP3496216A1 (en) * 2017-12-08 2019-06-12 Koninklijke Philips N.V. Segmented vertical cavity surface emitting laser
JP7212882B2 (ja) 2018-05-24 2023-01-26 スタンレー電気株式会社 垂直共振器型発光素子
US10892601B2 (en) * 2018-05-24 2021-01-12 Stanley Electric Co., Ltd. Vertical cavity light-emitting element
JP7166871B2 (ja) 2018-10-18 2022-11-08 スタンレー電気株式会社 垂直共振器型発光素子
JP7190865B2 (ja) 2018-10-18 2022-12-16 スタンレー電気株式会社 垂直共振器型発光素子
JP7291497B2 (ja) * 2019-02-21 2023-06-15 スタンレー電気株式会社 垂直共振器型発光素子
JP7258591B2 (ja) * 2019-02-21 2023-04-17 スタンレー電気株式会社 垂直共振器型発光素子
JP7288360B2 (ja) * 2019-07-01 2023-06-07 スタンレー電気株式会社 垂直共振器型発光素子
JPWO2022185766A1 (enExample) * 2021-03-03 2022-09-09

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6403983B1 (en) * 1999-04-15 2002-06-11 Daido Tokushuko Kabushiki Kaisha Quantum well type light-emitting diode
CN1627576A (zh) * 2003-10-28 2005-06-15 索尼株式会社 表面发光半导体激光器及其制造方法和光学装置
CN101136538A (zh) * 2006-08-31 2008-03-05 富士施乐株式会社 Vcsel、其制造方法、模块、光发送装置、光空间传输装置、光发送系统以及光空间传输系统
CN101510665A (zh) * 2008-02-13 2009-08-19 富士施乐株式会社 激光器、模块、光传输装置和系统、光通信装置和系统
JP2011205006A (ja) * 2010-03-26 2011-10-13 Furukawa Electric Co Ltd:The 半導体レーザ素子およびその製造方法
JP2017098328A (ja) * 2015-11-19 2017-06-01 学校法人 名城大学 垂直共振器型発光素子

Also Published As

Publication number Publication date
EP3869643A1 (en) 2021-08-25
EP3869643A4 (en) 2022-07-20
WO2020080160A1 (ja) 2020-04-23
JP7190865B2 (ja) 2022-12-16
JP2020064993A (ja) 2020-04-23
US12308614B2 (en) 2025-05-20
US20210351568A1 (en) 2021-11-11
CN112913094A (zh) 2021-06-04
US20250266663A1 (en) 2025-08-21
EP3869643B1 (en) 2023-07-19

Similar Documents

Publication Publication Date Title
CN112913094B (zh) 垂直谐振器式发光元件
CN113454860B (zh) 垂直腔面发光器件
US20250158360A1 (en) Vertical cavity surface emitting device
JP7586446B2 (ja) 垂直共振器型発光素子
JP7212882B2 (ja) 垂直共振器型発光素子
US12272927B2 (en) Vertical cavity surface emitting device
US12266906B2 (en) Vertical cavity surface emitting device
JP2025004105A (ja) 垂直共振器型発光素子
US20220393436A1 (en) Vertical cavity light-emitting element and manufacturing method of the same
JP7406365B2 (ja) 垂直共振器型発光素子
WO2023167076A1 (ja) 垂直共振器型発光素子

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant