CN112736183A - 带光反射层或带其和荧光体层的光半导体元件的制造方法 - Google Patents
带光反射层或带其和荧光体层的光半导体元件的制造方法 Download PDFInfo
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- CN112736183A CN112736183A CN202110035694.2A CN202110035694A CN112736183A CN 112736183 A CN112736183 A CN 112736183A CN 202110035694 A CN202110035694 A CN 202110035694A CN 112736183 A CN112736183 A CN 112736183A
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H10H20/851—Wavelength conversion means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
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Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015052523 | 2015-03-16 | ||
| JP2015-052523 | 2015-03-16 | ||
| JP2016043581A JP6762736B2 (ja) | 2015-03-16 | 2016-03-07 | 光反射層付光半導体素子、および、光反射層および蛍光体層付光半導体素子の製造方法 |
| JP2016-043581 | 2016-03-07 | ||
| CN201680016213.0A CN107431115A (zh) | 2015-03-16 | 2016-03-10 | 带光反射层的光半导体元件的制造方法、带光反射层和荧光体层的光半导体元件的制造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680016213.0A Division CN107431115A (zh) | 2015-03-16 | 2016-03-10 | 带光反射层的光半导体元件的制造方法、带光反射层和荧光体层的光半导体元件的制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112736183A true CN112736183A (zh) | 2021-04-30 |
Family
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110035694.2A Pending CN112736183A (zh) | 2015-03-16 | 2016-03-10 | 带光反射层或带其和荧光体层的光半导体元件的制造方法 |
| CN201680016213.0A Pending CN107431115A (zh) | 2015-03-16 | 2016-03-10 | 带光反射层的光半导体元件的制造方法、带光反射层和荧光体层的光半导体元件的制造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680016213.0A Pending CN107431115A (zh) | 2015-03-16 | 2016-03-10 | 带光反射层的光半导体元件的制造方法、带光反射层和荧光体层的光半导体元件的制造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10424703B2 (https=) |
| EP (1) | EP3273491B1 (https=) |
| JP (1) | JP6762736B2 (https=) |
| KR (1) | KR102541533B1 (https=) |
| CN (2) | CN112736183A (https=) |
| TW (1) | TW201640705A (https=) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6762736B2 (ja) * | 2015-03-16 | 2020-09-30 | 晶元光電股▲ふん▼有限公司Epistar Corporation | 光反射層付光半導体素子、および、光反射層および蛍光体層付光半導体素子の製造方法 |
| CN107994109A (zh) * | 2016-10-27 | 2018-05-04 | 佛山市国星光电股份有限公司 | 一种cob显示模组及其制造方法 |
| JP6776859B2 (ja) | 2016-12-09 | 2020-10-28 | 日本電気硝子株式会社 | 波長変換部材の製造方法、波長変換部材及び発光デバイス |
| TWI630732B (zh) * | 2016-12-30 | 2018-07-21 | 光寶光電(常州)有限公司 | 螢光粉片供應模組、發光二極體封裝結構及其製造方法 |
| TWI859121B (zh) | 2017-07-27 | 2024-10-21 | 美商杜邦電子材料國際有限責任公司 | 光電裝置及其製造方法、以及其用途 |
| JP7037030B2 (ja) * | 2017-07-31 | 2022-03-16 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| US10361349B2 (en) | 2017-09-01 | 2019-07-23 | Cree, Inc. | Light emitting diodes, components and related methods |
| JP6627838B2 (ja) * | 2017-09-29 | 2020-01-08 | 日亜化学工業株式会社 | 透光性シートの製造方法 |
| US11355548B2 (en) * | 2017-12-20 | 2022-06-07 | Lumileds Llc | Monolithic segmented LED array architecture |
| CN109282178B (zh) * | 2018-08-24 | 2022-02-08 | 京东方科技集团股份有限公司 | 灯条及其制备方法、显示装置 |
| DE102018127521B4 (de) * | 2018-11-05 | 2026-03-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
| JP6933817B2 (ja) | 2019-04-05 | 2021-09-08 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| KR102242007B1 (ko) * | 2019-08-13 | 2021-04-19 | 아이디씨코리아 주식회사 | 발광소자 다이 어레이를 이용한 조명 장치 및 그 제조방법 |
| CN112820205B (zh) * | 2019-11-15 | 2023-01-31 | 成都辰显光电有限公司 | 显示面板及其制备方法、显示装置 |
| US12027501B2 (en) | 2020-04-02 | 2024-07-02 | Nichia Corporation | Surface light source and method of manufacturing surface light source |
| US12408496B2 (en) * | 2021-10-29 | 2025-09-02 | Lumileds Singapore Pte. Ltd. | Patterned deposition mask formed using polymer dispersed in a liquid solvent |
| WO2023076349A1 (en) * | 2021-10-29 | 2023-05-04 | Lumileds Llc | Patterned deposition mask formed using polymer dispersed in a liquid solvent |
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2016
- 2016-03-07 JP JP2016043581A patent/JP6762736B2/ja active Active
- 2016-03-10 US US15/556,020 patent/US10424703B2/en active Active
- 2016-03-10 KR KR1020177025605A patent/KR102541533B1/ko active Active
- 2016-03-10 CN CN202110035694.2A patent/CN112736183A/zh active Pending
- 2016-03-10 EP EP16764849.2A patent/EP3273491B1/en active Active
- 2016-03-10 CN CN201680016213.0A patent/CN107431115A/zh active Pending
- 2016-03-16 TW TW105108133A patent/TW201640705A/zh unknown
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2019
- 2019-07-26 US US16/523,627 patent/US10923639B2/en active Active
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| CN102738368A (zh) * | 2011-04-14 | 2012-10-17 | 日东电工株式会社 | 荧光反射片、发光二极管装置及其制造方法 |
| CN102738362A (zh) * | 2011-04-14 | 2012-10-17 | 日东电工株式会社 | 反射树脂片、发光二极管装置及其制造方法 |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20170128298A (ko) | 2017-11-22 |
| US10424703B2 (en) | 2019-09-24 |
| EP3273491A1 (en) | 2018-01-24 |
| CN107431115A (zh) | 2017-12-01 |
| EP3273491A4 (en) | 2019-01-16 |
| US20180309034A1 (en) | 2018-10-25 |
| KR102541533B1 (ko) | 2023-06-07 |
| JP6762736B2 (ja) | 2020-09-30 |
| JP2016174148A (ja) | 2016-09-29 |
| TW201640705A (zh) | 2016-11-16 |
| US10923639B2 (en) | 2021-02-16 |
| EP3273491B1 (en) | 2021-12-01 |
| US20190348587A1 (en) | 2019-11-14 |
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