CN1126371A - 微波集成电路无源元件的结构和降低信号传播损耗的方法 - Google Patents

微波集成电路无源元件的结构和降低信号传播损耗的方法 Download PDF

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CN1126371A
CN1126371A CN95109603A CN95109603A CN1126371A CN 1126371 A CN1126371 A CN 1126371A CN 95109603 A CN95109603 A CN 95109603A CN 95109603 A CN95109603 A CN 95109603A CN 1126371 A CN1126371 A CN 1126371A
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阿道夫C·雷耶斯
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Abstract

一种微波集成电路无源元件结构和降低信号传播损耗的方法。无源元件(10)带有一个覆盖硅衬底(14)的绝缘层(12)。设置含有一信号线(18)和一接地面(20)的金属层(16)覆盖绝缘层(12)，且金属层(16)至少有一部分通过绝缘层(12)中至少一个窗口(22、24)与衬底(14)相接触。硅衬底的电阻率大于2000Ωcm，而无源元件最好传播频率高于500MHz的信号。由于金属层下方的衬底在表面处的电荷密度显著地降低，故信号损耗被减为最小。

Description

微波集成电路无源元件的结构和 降低信号传播损耗的方法
本发明一般说来涉及到高频电路，更确切地说是涉及微波集成电路的无源元件。
现有的高性能单片微波集成电路(MMIC)都制作在GaAs衬底上以便将信号传播损耗减到最小。标准的硅衬底，尽管在购置、处理和加工方面的费用比GaAs衬底低，但由于原先都认为硅不适合于这种通常传播频率高于500MHz的信号的电路，而未被用作MMIC的高性能衬底。特别是硅的电阻率比GaAs低这一点被认为是采用硅衬底的一个重要缺陷。然而若能够采用硅衬底，则MMIC的片子和加工成本将大大地降低。因此，人们希望出现一种采用硅衬底的MMIC，并希望将其信号传播损耗限制到可以与现有GaAs衬底MMIC的信号传播损耗相比拟的水平。
图1是根据本发明第一实施例的微波集成电路中无源元件的剖面图；
图2是根据本发明第二实施例的双层金属无源元件的剖面图；
图3是根据本发明第三实施例的金属—绝缘体—金属(MIM)电容器的剖面图；以及
图4是根据本发明第四实施例的无源元件加以平带电压情况的剖面图。
简而言之，本发明在微波集成电路中提供了一种无源元件结构以及降低信号传播损耗的方法。本发明通常借助于降低无源元件下方的衬底表面处的电荷密度的方法来达到此目的。此种电荷降低可如下列实施例所述来实现。
参照图1—4可更充分地描述本发明。图1示出了根据本发明第一实施例的无源元件10的剖面图。绝缘层12排列在具有表面15的硅衬底14上，而金属层16排列在绝缘层12上。如同例如在共平面波导传输线中见到的那样，将金属层16图形化为信号线18和接地面20。绝缘层12有一个第一窗口22和一个第二窗口24，它们被例如通路所填充。信号线18和接地面20经由第一窗口22和第二窗口24形成与衬底14的肖特基接触。由于这一接触，就形成了耗尽区26。
根据本发明，无源元件10至少有一部分金属层16同衬底14相接触以形成至少一个耗尽区26。在衬底14的表面15上金属层16叠置在表面15上的地方都将出现电荷的积累或反型。然而，在耗尽区26中不出现这种电荷。表面15处反型或积累电荷的形成是因为金属层16和衬底14之间的能级差别。这些电荷在表面15处的出现是不可取的，因为这会降低表面15靠近金属层16的区域中衬底14的电阻率。这一降低了的电阻率会增加信号线18所传播信号的传播损耗。接地面20下方的电荷积累或反型也会增加这种传播损耗。
其衬底具有上述表面电荷的现有无源元件在高频下受到传播损耗的损害，这是由于传播的信号不再传播于其导体内部，而是以电磁场的形式传过媒体。通常，传播的媒体包含一个或多个导体和相应的接地面。这些接地面对电磁场的传播以及电磁场如何传过围绕着传播媒质的半导体材料起控制作用。当半导体材料如上所述带有导电电荷时，信号就被衰减。
然而，根据本发明，由于存在耗尽区26，上述不希望有的电荷被基本上从表面15耗尽掉，因而大大降低了传播损耗。上述耗尽是由于表面15在与金属层16接触处载流子被耗尽而出现的。由于这一耗尽，耗尽区26的电阻率显著地大于衬底14的体电阻率。更确切地说，耗尽区26的电阻率大体上等于衬底14的本征电阻率。应该承认，本征电阻率是选用的特定半导体可能获得的最高电阻率。例如，对硅来说，此最大的本征电阻率约为100000Ωcm。
耗尽区26的宽度是衬底14体电阻率的函数。例如，在金属层16和衬底14之间具有0.6V内建电压的2000Ωcm N型硅衬底的情况下，可获得20μm的耗尽宽度。
就信号传播而论，本发明的一个优点是，对于诸如图1所示的共平面型结构，电磁场的大部分集中在从表面15算起的数十微米的范围内。因此，大部分电磁场基本上行进在靠近电荷耗尽了的表面的半绝缘环境中。
在形成无源元件10的集成电路布局(未示出)的过程中，通常最好是在布局中只要有可能就在金属层16和衬底14之间建立接触。然而，即使只有小部分的金属层16同衬底14相接触，亦可观察到信号传播损耗有某种有利的降低。通过实验测量已发现，除了受可用的电路设计规则限制者外，只要可能就在绝缘层12中制作诸如第一窗口22那样的窗口，这种做法所提供的微波集成电路其信号传播损耗可基本上降到采用GaAs衬底的现有高性能MMIC所达到的水平。例如，在一种情况下，测得的损耗其范围从不采用窗口时的约85dB/m到带有无限长窗口(亦即在整个信号线下方的窗口)时的约8.5dB/m。
同时，在其它的做法中，金属层16和衬底14之间的接触可用一个或多个填充以不同于金属层16的导电材料的通路来实现。换言之，用来填充通路的金属可以不同于用作金属层16的金属。
表示无源元件10的结构可用于微波集成电路所用的很多种无源元件。图1具体示出了一种共平面波导传输线的剖面。其它无源元件可包括例如电感器、电容器、其它类型的传输线和互连线、电阻器以及滤波器。在运行中，无源元件10可方便地传播频率高于约500MHz的信号，并且对频率高于约1GHz的信号甚至更有利。MMIC中大于所传播的信号波长的
Figure A9510960300081
的无源线的任何长度，通常都适用于本发明。对于超过信号波长 的无源线长度，无源线输入和输出之间的电压差不再可忽略，从而引起显著的寄生电容。其出现的原因部分是由于传播信号的电流和电压分量不再只在导体内部行进的缘故。
就用于制造的材料而论，衬底14为高阻硅衬底，其体电阻率最好至少约为2000Ωcm，大于3000Ωcm更好。作为一个例子，可采用(100)或(111)取向的高阻N型硅衬底。也可采用P型硅衬底。最佳硅衬底的典型体电阻率范围为约3000到7000Ωcm(体电阻率越高，则得到的耗尽区26的耗尽宽度越大)。
此外，高阻衬底14最好应由非补偿的高纯硅来构成，这意味着没有金属原子替代硅而形成高阻特性。补偿的硅由于其中的补偿金属原子产生深能级杂质陷阱而达到其高阻率。采用纯度较低的补偿硅可导致有害的影响，这是因为进行补偿的金属原子在更高的工艺温度下倾向下在衬底中迁移。例如在制作有源器件时就需要这种温度。这种迁移可能产生的有害影响包括衬底体电阻率的降低和衬底的半导体类型从n型转变为P型或者从P型转变成n型。
虽然此处示出的是单层，但应指出的是绝缘层12或金属层16都可以是单层也可以是多层。例如，绝缘层12可以是二氧化硅和/或氮化硅。同时，金属层16可以是铜和金组成的势垒金属。
图2示出了根据本发明第二实施例的双层金属无源元件30的剖面图。第一金属层32排列在诸如高阻硅的硅衬底34上。绝缘层36覆盖着第一金属层32，其中有一窗口40，而第二金属层38覆盖着绝缘层36并通过窗口40同衬底34接触。在第一金属层32同衬底34接触处形成一个耗尽区42，并在第二金属层38同衬底34接触处形成耗尽区44。如上面图1所讨论的，耗尽区42和44具有高的电阻率，可降低无源元件30所传播的信号的传播损耗。适用于衬底34的材料以及典型的信号频率运行范围都相似于上述图1所讨论的情况。
图2的无源元件30也可用来与图1的无源元件10连接以构成电感器，以使接地面短路，或构成跨越两个金属化系统的金属层的区域。第一金属层32可用来将这种电感器的中心互连到其输出，或用来互连其接地面。第二金属层38一般用来传播高频信号，因为其金属化结构通常比第一金属层32厚。这导致无源元件的Q值高(例如电容器、电感器或传输线)。
无源元件30为双层金属系统提供了一个使传播损耗变为最小的高频环境。此处所示的结构使第一金属层32和衬底34之间以及第二金属层38和衬底34之间形成最高级的肖特基接触。
图3示出了根据本发明第三实施例的MIM电容器50的剖面图。更详细地说，第一金属层52排列在衬底51上并形成一个耗尽区58。设置绝缘层54和第二金属层56覆盖在第一金属层52上。适合于衬底51和电容器50的其它元件的材料以及典型的频率运行范围与上述图1和2所讨论的情况类似。
在图3中，由于在第一金属层52下形成了耗尽区58，不再出现反型/积累电荷。而且，耗尽区58的电阻率很高。因此，基本上没有信号损耗。如果象在现有MIM电容器中那样，绝缘体置于第一金属层52和衬底51之间，则在衬底51中将形成反型/电荷积累区，从而引起两个不希望有的效应：与MIM电容器50并联的寄生电容器，以及可能产生较高信号损耗的低阻通路。
图4示出了根据本发明第四实施例的无源元件60并采用平带电压(VFB)的剖面图。绝缘层62排列在带有表面72的衬底64上。衬底64最好是一个高阻硅衬底，但根据本实施例也可用其它半导体材料作为衬底64。将金属层66图形化形成一个信号线68和接地面70(如同共平面波导传输线中所见那样)，并排列在绝缘层62上。
如上述图1—3所讨论的，在不存在外加电压VFB的情况下，在衬底64的表面72处可能形成积累或反型区，在这种区域中增加的电荷密度会降低表面72处衬底64的电阻率并增大信号线68所传播的信号的传播损耗。
然而，根据本发明，VFB被加在金属层66和衬底64的表面72之间，以致衬底64在表面72处的电阻率大体上等于衬底64的体电阻率。借助于消除表面处的反型/积累电荷，从而降低了信号线68所传播的高频信号的传播损耗。这种积累/反型电荷是由于衬底64补偿了金属层66和衬底64之间能级的差别而产生的。
外加VFB的幅度相当于选用于无源元件60的特定金属—绝缘体—衬底组合的平带电压。平带电压依赖于许多因素，包括金属—半导体功函数差别、固定电荷、可动电荷、界面电荷以及绝缘体厚度。固定电荷、可动电荷及界面电荷都位于半导体和金属之间。固定电荷和界面电荷由半导体和绝缘体的原子界面所引起，而可动电荷由加工过程中绝缘体的沾污所引起。如本技术领域熟练人员所知，平带电压是使表面72处衬底64的价带和导带都平坦的电压。借助于测量恰当的相应的金属—绝缘体—半导体电容器的电容—电压特性，可以确定平带电压的幅度。
在本实施例的实践中，直流电压源(未绘出)将电压V′FB加于信号线68和接地面70，接地参考连接于衬底64。衬底64最好在背表面74上进行重掺杂以便与电压源形成欧姆接触。本技术领域熟练人员知道，由于衬底64(最好是高阻衬底)上的电阻性的电压降，V′FB须稍大于VFB。
当用无源元件60来传播频率高于约500MHz的信号时更为有利，而且对高于约1GHz的频率甚至更有利。当用硅作为衬底64时，最佳的电阻率为大于约2000Ωcm，而大于约3000Ωcm的电阻率则更好。无源元件60可用于各种微波应用中，包括例如用作电感器、电容器、传输线、电阻器或滤波器。
在此处引作参考的Reyes等人的“硅作为微波衬底”(1994年5月23—27日，微波理论和技术研讨会论文集第三卷，PP1759—1762)中，可以找到有关硅用作微波衬底的其它讨论，包括硅衬底上共平面传输线中观察到的损耗同GaAs衬底上观察到的损耗的比较结果。
至此，应认为已提供了一种降低微波集成电路中信号传播损耗的新颖方法。本发明借助于在高阻硅半导体衬底上产生耗尽区并消去半导体表面电荷的方法而降低了高频信号损耗。本发明的一个优点是在硅衬底上提供了高性能的MMIC。比之GaAs工艺，硅工艺是一种成熟的技术，因而采用这一工艺使得可以制造低成本的MMIC。作为硅工艺有利的一个例子，硅衬底具有优良的用于许多倒装片凸缘连接技术的平面性。

Claims (10)

1.一种形成在硅衬底(14)上并带有用来传播信号的无源元件(10)的微波集成电路，上述无源元件的特征是：
一个覆盖上述衬底并带有一个第一窗口(22)的绝缘层(12)；以及
一个覆盖上述绝缘层的金属层(16)，其中，上述金属层至少有一部分通过上述第一窗口与上述衬底相接触。
2.如权利要求1的电路，其中所述衬底的电阻率大于约2000Ωcm。
3.如权利要求1的电路，其中：
上述金属层包含一个信号线(18)和一个接地面(20)；
上述信号线至少一部分通过上述第一窗口与上述衬底相接触；以及
上述接地面至少一部分通过上述绝缘层中的第二窗口(24)与上述衬底相接触。
4.一种形成在电阻率大于2000Ωcm的硅衬底(14)上并包括一个用来传播信号的无源元件(10)的微波集成电路，上述信号的频率大于500MHz，上述无源元件的特征是：
一个覆盖上述衬底并带有一个窗口(22)的绝缘层((12)；以及
一个覆盖上述绝缘层的金属层(16)，其中，上述金属层至少有一部分通过上述窗口与上述衬底相接触。
5.一种形成在硅衬底(34)上并带有一个用来传播信号的无源元件(30)的微波集成电路，上述无源元件的特征是：
一个形成在上述衬底上的第一金属层(32)；
一个覆盖上述第一金属层并带有一个窗口(40)的绝缘层(36)；以及
一个覆盖上述第一金属层的第二金属层(38)，其中上述第二金属层至少有一部分通过上述窗口与上述衬底相接触。
6.如权利要求5的电路，其中：
上述衬底的电阻率大于2000Ωcm；以及
上述信号的频率高于500MHz。
7.一种形成在电阻率大于约2000Ωcm的硅衬底(51)上的微波集成电路，其中的金属—绝缘体—金属电容器(50)的特征是：
一个排列在上述衬底上的第一金属层(52)；
一个排列在上述第一金属层上的绝缘层(54)；以及
一个排列在上述绝缘层上的第二金属层(56)。
8.一种降低形成在带有一个表面(72)的衬底(64)上的微波集成电路中传播的频率大于500MHz的信号的传播损耗的方法，其特征是下列步骤：
提供一个用来传播上述信号的无源元件，上述无源元件包含一个排列在上述衬底的上述表面上的绝缘层(62)以及一个排列在上述绝缘层上的金属层(66)；以及
在上述金属层和上述衬底的上述表面之间加一个电压，其幅度大致等于相应于上述衬底、上述绝缘层和上述金属层的平带电压。
9.如权利要求8的方法，其中所述的加电压步骤包括选择上述的电压幅度，使上述衬底在上述表面处的第一电阻率大致等于上述衬底的第二体电阻率。
10.一种降低形成在电阻率大于2000Ωcm并带有一个表面(72)的硅衬底(64)上的微波集成电路中传播的频率高于500MHz的信号的传播损耗的方法，其特征是下列步骤：
提供一个用来传播上述信号的无源元件，上述无源元件包含一个排列在上述衬底上述表面上的绝缘层(62)，以及一个排列在上述绝缘层上的金属层(66)；以及
在上述绝缘层和上述衬底的上述表面之间加一个电压，其幅度大致等于相应于上述衬底、上述绝缘层和上述金属层的平带电压。
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