JPS5565145A - Characteristic measuring method for charge trap center in insulator - Google Patents

Characteristic measuring method for charge trap center in insulator

Info

Publication number
JPS5565145A
JPS5565145A JP13841878A JP13841878A JPS5565145A JP S5565145 A JPS5565145 A JP S5565145A JP 13841878 A JP13841878 A JP 13841878A JP 13841878 A JP13841878 A JP 13841878A JP S5565145 A JPS5565145 A JP S5565145A
Authority
JP
Japan
Prior art keywords
insulation film
electron
trap
charge
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13841878A
Other languages
Japanese (ja)
Other versions
JPS6148656B2 (en
Inventor
Koichiro Ootori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13841878A priority Critical patent/JPS5565145A/en
Publication of JPS5565145A publication Critical patent/JPS5565145A/en
Publication of JPS6148656B2 publication Critical patent/JPS6148656B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE: To obtain the trap area for charge trap center, by producing electron and positive hole pairs through electron rays radiated on the surface of insulation film of MOS construction, and measuring the change in the charge of insulation film through the DC voltage applied to the metal electrode and one charge carrier fed in the insulation film.
CONSTITUTION: The electron beam 2 is radiated near the surface of the oxide film 1b through the gate electrode metal 1c of MOS diode 1 to produce electron and positive hole pairs, and positive holes of electrons are reached in the insulation film by applying positive or negative voltage to the metal electrode 1c with the selector switch 3. The current in this case is measured with the ammeter 5 and the flat band voltage VFB is obtained by measuring the capacitance-voltage characteristics with the C-V meter 7 by stopping the electron beam. From this result, the trap area of charge carrier can be obtained with known relation of equation. Thus, the measurement of trap in the oxide film being a cause to instability of MOST accompanied with fine LSI can simply be made.
COPYRIGHT: (C)1980,JPO&Japio
JP13841878A 1978-11-11 1978-11-11 Characteristic measuring method for charge trap center in insulator Granted JPS5565145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13841878A JPS5565145A (en) 1978-11-11 1978-11-11 Characteristic measuring method for charge trap center in insulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13841878A JPS5565145A (en) 1978-11-11 1978-11-11 Characteristic measuring method for charge trap center in insulator

Publications (2)

Publication Number Publication Date
JPS5565145A true JPS5565145A (en) 1980-05-16
JPS6148656B2 JPS6148656B2 (en) 1986-10-25

Family

ID=15221493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13841878A Granted JPS5565145A (en) 1978-11-11 1978-11-11 Characteristic measuring method for charge trap center in insulator

Country Status (1)

Country Link
JP (1) JPS5565145A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0704890A2 (en) * 1994-09-30 1996-04-03 Shin-Etsu Handotai Company Limited A method of evaluating a mis-type semiconductor device
EP0694967A3 (en) * 1994-07-29 1998-01-21 Motorola, Inc. Microwave integrated circuit passive element structure and method for reducing signal propagation losses
CN111261708A (en) * 2020-02-11 2020-06-09 捷捷微电(上海)科技有限公司 Semiconductor power device structure
CN111855705A (en) * 2020-07-28 2020-10-30 哈尔滨工业大学 Method for detecting radiation-induced defects in oxide layer of electronic device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0694967A3 (en) * 1994-07-29 1998-01-21 Motorola, Inc. Microwave integrated circuit passive element structure and method for reducing signal propagation losses
EP0704890A2 (en) * 1994-09-30 1996-04-03 Shin-Etsu Handotai Company Limited A method of evaluating a mis-type semiconductor device
EP0704890A3 (en) * 1994-09-30 1997-05-02 Shinetsu Handotai Kk A method of evaluating a mis-type semiconductor device
US5701088A (en) * 1994-09-30 1997-12-23 Shin-Etsu Handotai Co., Ltd Method of evaluating a MIS-type semiconductor device
CN111261708A (en) * 2020-02-11 2020-06-09 捷捷微电(上海)科技有限公司 Semiconductor power device structure
CN111855705A (en) * 2020-07-28 2020-10-30 哈尔滨工业大学 Method for detecting radiation-induced defects in oxide layer of electronic device

Also Published As

Publication number Publication date
JPS6148656B2 (en) 1986-10-25

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