JPS5565145A - Characteristic measuring method for charge trap center in insulator - Google Patents
Characteristic measuring method for charge trap center in insulatorInfo
- Publication number
- JPS5565145A JPS5565145A JP13841878A JP13841878A JPS5565145A JP S5565145 A JPS5565145 A JP S5565145A JP 13841878 A JP13841878 A JP 13841878A JP 13841878 A JP13841878 A JP 13841878A JP S5565145 A JPS5565145 A JP S5565145A
- Authority
- JP
- Japan
- Prior art keywords
- insulation film
- electron
- trap
- charge
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
PURPOSE: To obtain the trap area for charge trap center, by producing electron and positive hole pairs through electron rays radiated on the surface of insulation film of MOS construction, and measuring the change in the charge of insulation film through the DC voltage applied to the metal electrode and one charge carrier fed in the insulation film.
CONSTITUTION: The electron beam 2 is radiated near the surface of the oxide film 1b through the gate electrode metal 1c of MOS diode 1 to produce electron and positive hole pairs, and positive holes of electrons are reached in the insulation film by applying positive or negative voltage to the metal electrode 1c with the selector switch 3. The current in this case is measured with the ammeter 5 and the flat band voltage VFB is obtained by measuring the capacitance-voltage characteristics with the C-V meter 7 by stopping the electron beam. From this result, the trap area of charge carrier can be obtained with known relation of equation. Thus, the measurement of trap in the oxide film being a cause to instability of MOST accompanied with fine LSI can simply be made.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13841878A JPS5565145A (en) | 1978-11-11 | 1978-11-11 | Characteristic measuring method for charge trap center in insulator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13841878A JPS5565145A (en) | 1978-11-11 | 1978-11-11 | Characteristic measuring method for charge trap center in insulator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5565145A true JPS5565145A (en) | 1980-05-16 |
JPS6148656B2 JPS6148656B2 (en) | 1986-10-25 |
Family
ID=15221493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13841878A Granted JPS5565145A (en) | 1978-11-11 | 1978-11-11 | Characteristic measuring method for charge trap center in insulator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5565145A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0704890A2 (en) * | 1994-09-30 | 1996-04-03 | Shin-Etsu Handotai Company Limited | A method of evaluating a mis-type semiconductor device |
EP0694967A3 (en) * | 1994-07-29 | 1998-01-21 | Motorola, Inc. | Microwave integrated circuit passive element structure and method for reducing signal propagation losses |
CN111261708A (en) * | 2020-02-11 | 2020-06-09 | 捷捷微电(上海)科技有限公司 | Semiconductor power device structure |
CN111855705A (en) * | 2020-07-28 | 2020-10-30 | 哈尔滨工业大学 | Method for detecting radiation-induced defects in oxide layer of electronic device |
-
1978
- 1978-11-11 JP JP13841878A patent/JPS5565145A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0694967A3 (en) * | 1994-07-29 | 1998-01-21 | Motorola, Inc. | Microwave integrated circuit passive element structure and method for reducing signal propagation losses |
EP0704890A2 (en) * | 1994-09-30 | 1996-04-03 | Shin-Etsu Handotai Company Limited | A method of evaluating a mis-type semiconductor device |
EP0704890A3 (en) * | 1994-09-30 | 1997-05-02 | Shinetsu Handotai Kk | A method of evaluating a mis-type semiconductor device |
US5701088A (en) * | 1994-09-30 | 1997-12-23 | Shin-Etsu Handotai Co., Ltd | Method of evaluating a MIS-type semiconductor device |
CN111261708A (en) * | 2020-02-11 | 2020-06-09 | 捷捷微电(上海)科技有限公司 | Semiconductor power device structure |
CN111855705A (en) * | 2020-07-28 | 2020-10-30 | 哈尔滨工业大学 | Method for detecting radiation-induced defects in oxide layer of electronic device |
Also Published As
Publication number | Publication date |
---|---|
JPS6148656B2 (en) | 1986-10-25 |
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