JPS5565144A - Measuring method of distribution of charge trap center in insulator - Google Patents
Measuring method of distribution of charge trap center in insulatorInfo
- Publication number
- JPS5565144A JPS5565144A JP13841778A JP13841778A JPS5565144A JP S5565144 A JPS5565144 A JP S5565144A JP 13841778 A JP13841778 A JP 13841778A JP 13841778 A JP13841778 A JP 13841778A JP S5565144 A JPS5565144 A JP S5565144A
- Authority
- JP
- Japan
- Prior art keywords
- trap
- measured
- oxide film
- distribution
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain the standard deviation of the center of gravity for the distribution of thickness for the charge trap center, by irradiation the insulation film of MOS construction with the light with attenuation in proportion to the distance of passage in it, and measuring the change in the charge of the charge trap center caused by it.
CONSTITUTION: The flat band voltage of MOS diode consisting of the Si substrate 1, oxide film 2 and gate electrode 3, is measured with the capacitance-voltage measuring unit 5. Next, after trapping the electrons uniformly to the trap in the oxide film 2 with avalanche injection, the flat band voltage is measured. Next, light 7 is radiated on the oxide film 2 through the Si substrate 1 to emit electrons from the trap, then the flat band voltage is measured. The standard deviation of the trap distribution in the insulation film can be obtained with known relation equation from the result of measurements. Thus, the trap in oxide film which is a cause to instability of MOST accompanied with fine LSI can simply be measured with non- destructive method.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13841778A JPS5565144A (en) | 1978-11-11 | 1978-11-11 | Measuring method of distribution of charge trap center in insulator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13841778A JPS5565144A (en) | 1978-11-11 | 1978-11-11 | Measuring method of distribution of charge trap center in insulator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5565144A true JPS5565144A (en) | 1980-05-16 |
JPS6212855B2 JPS6212855B2 (en) | 1987-03-20 |
Family
ID=15221469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13841778A Granted JPS5565144A (en) | 1978-11-11 | 1978-11-11 | Measuring method of distribution of charge trap center in insulator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5565144A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0694967A3 (en) * | 1994-07-29 | 1998-01-21 | Motorola, Inc. | Microwave integrated circuit passive element structure and method for reducing signal propagation losses |
-
1978
- 1978-11-11 JP JP13841778A patent/JPS5565144A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0694967A3 (en) * | 1994-07-29 | 1998-01-21 | Motorola, Inc. | Microwave integrated circuit passive element structure and method for reducing signal propagation losses |
Also Published As
Publication number | Publication date |
---|---|
JPS6212855B2 (en) | 1987-03-20 |
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