JPS5565144A - Measuring method of distribution of charge trap center in insulator - Google Patents

Measuring method of distribution of charge trap center in insulator

Info

Publication number
JPS5565144A
JPS5565144A JP13841778A JP13841778A JPS5565144A JP S5565144 A JPS5565144 A JP S5565144A JP 13841778 A JP13841778 A JP 13841778A JP 13841778 A JP13841778 A JP 13841778A JP S5565144 A JPS5565144 A JP S5565144A
Authority
JP
Japan
Prior art keywords
trap
measured
oxide film
distribution
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13841778A
Other languages
Japanese (ja)
Other versions
JPS6212855B2 (en
Inventor
Koichiro Ootori
Taiji Oku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13841778A priority Critical patent/JPS5565144A/en
Publication of JPS5565144A publication Critical patent/JPS5565144A/en
Publication of JPS6212855B2 publication Critical patent/JPS6212855B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain the standard deviation of the center of gravity for the distribution of thickness for the charge trap center, by irradiation the insulation film of MOS construction with the light with attenuation in proportion to the distance of passage in it, and measuring the change in the charge of the charge trap center caused by it.
CONSTITUTION: The flat band voltage of MOS diode consisting of the Si substrate 1, oxide film 2 and gate electrode 3, is measured with the capacitance-voltage measuring unit 5. Next, after trapping the electrons uniformly to the trap in the oxide film 2 with avalanche injection, the flat band voltage is measured. Next, light 7 is radiated on the oxide film 2 through the Si substrate 1 to emit electrons from the trap, then the flat band voltage is measured. The standard deviation of the trap distribution in the insulation film can be obtained with known relation equation from the result of measurements. Thus, the trap in oxide film which is a cause to instability of MOST accompanied with fine LSI can simply be measured with non- destructive method.
COPYRIGHT: (C)1980,JPO&Japio
JP13841778A 1978-11-11 1978-11-11 Measuring method of distribution of charge trap center in insulator Granted JPS5565144A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13841778A JPS5565144A (en) 1978-11-11 1978-11-11 Measuring method of distribution of charge trap center in insulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13841778A JPS5565144A (en) 1978-11-11 1978-11-11 Measuring method of distribution of charge trap center in insulator

Publications (2)

Publication Number Publication Date
JPS5565144A true JPS5565144A (en) 1980-05-16
JPS6212855B2 JPS6212855B2 (en) 1987-03-20

Family

ID=15221469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13841778A Granted JPS5565144A (en) 1978-11-11 1978-11-11 Measuring method of distribution of charge trap center in insulator

Country Status (1)

Country Link
JP (1) JPS5565144A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0694967A3 (en) * 1994-07-29 1998-01-21 Motorola, Inc. Microwave integrated circuit passive element structure and method for reducing signal propagation losses

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0694967A3 (en) * 1994-07-29 1998-01-21 Motorola, Inc. Microwave integrated circuit passive element structure and method for reducing signal propagation losses

Also Published As

Publication number Publication date
JPS6212855B2 (en) 1987-03-20

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