JPS5512408A - Breakdown voltage testing method of insulator - Google Patents
Breakdown voltage testing method of insulatorInfo
- Publication number
- JPS5512408A JPS5512408A JP8402978A JP8402978A JPS5512408A JP S5512408 A JPS5512408 A JP S5512408A JP 8402978 A JP8402978 A JP 8402978A JP 8402978 A JP8402978 A JP 8402978A JP S5512408 A JPS5512408 A JP S5512408A
- Authority
- JP
- Japan
- Prior art keywords
- film
- breakdown voltage
- sio
- insulator
- stored
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Relating To Insulation (AREA)
Abstract
PURPOSE: To make it possible to meter the true value of the breakdown voltage of an insulating film by charging an insulator whit positive or negative charges due to the corona discharge and by metering the charge potential with the use of a surface potentiometer.
CONSTITUTION: In case the breakdown voltage of a film 2 of SiO2 which is formed on a P type semiconductor wafer of Si, the Si wafer 1 formed with the film 2 is placed on a test table and is stored with positive (or negative) charges due to the corona discharge. The charges stored on the insulating film can be manually or automatically measured with the use of a surface potentiometer. Thus, the charge storages are repeated, and the storages are repeated on the film of SiO2 so that the maximum potential to be stored on the film of SiO2 becomes the potential value, which can be endured at the most under the condition with no current flowing through the insulating film, i.e., the direct value of the breakdown voltage.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8402978A JPS6046665B2 (en) | 1978-07-12 | 1978-07-12 | Insulator breakdown voltage testing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8402978A JPS6046665B2 (en) | 1978-07-12 | 1978-07-12 | Insulator breakdown voltage testing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5512408A true JPS5512408A (en) | 1980-01-29 |
JPS6046665B2 JPS6046665B2 (en) | 1985-10-17 |
Family
ID=13819107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8402978A Expired JPS6046665B2 (en) | 1978-07-12 | 1978-07-12 | Insulator breakdown voltage testing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6046665B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4296370A (en) * | 1979-10-11 | 1981-10-20 | Rca Corporation | Method of detecting a thin insulating film over a conductor |
US4812756A (en) * | 1987-08-26 | 1989-03-14 | International Business Machines Corporation | Contactless technique for semicondutor wafer testing |
US5354735A (en) * | 1992-07-30 | 1994-10-11 | Firmenich Sa | Use of a cyclopentadecenone as perfuming ingredient |
US5498974A (en) * | 1994-12-30 | 1996-03-12 | International Business Machines Corporation | Contactless corona-oxide-semiconductor Q-V mobile charge measurement method and apparatus |
JP2007263875A (en) * | 2006-03-29 | 2007-10-11 | Ngk Insulators Ltd | Plasma generation electrode inspection device |
-
1978
- 1978-07-12 JP JP8402978A patent/JPS6046665B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4296370A (en) * | 1979-10-11 | 1981-10-20 | Rca Corporation | Method of detecting a thin insulating film over a conductor |
US4812756A (en) * | 1987-08-26 | 1989-03-14 | International Business Machines Corporation | Contactless technique for semicondutor wafer testing |
US5354735A (en) * | 1992-07-30 | 1994-10-11 | Firmenich Sa | Use of a cyclopentadecenone as perfuming ingredient |
US5498974A (en) * | 1994-12-30 | 1996-03-12 | International Business Machines Corporation | Contactless corona-oxide-semiconductor Q-V mobile charge measurement method and apparatus |
JP2007263875A (en) * | 2006-03-29 | 2007-10-11 | Ngk Insulators Ltd | Plasma generation electrode inspection device |
JP4699928B2 (en) * | 2006-03-29 | 2011-06-15 | 日本碍子株式会社 | Plasma generation electrode inspection device |
Also Published As
Publication number | Publication date |
---|---|
JPS6046665B2 (en) | 1985-10-17 |
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