JPS6471142A - Measurement of potential of semiconductor device - Google Patents
Measurement of potential of semiconductor deviceInfo
- Publication number
- JPS6471142A JPS6471142A JP62219419A JP21941987A JPS6471142A JP S6471142 A JPS6471142 A JP S6471142A JP 62219419 A JP62219419 A JP 62219419A JP 21941987 A JP21941987 A JP 21941987A JP S6471142 A JPS6471142 A JP S6471142A
- Authority
- JP
- Japan
- Prior art keywords
- electron beams
- film
- semiconductor device
- conductive film
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To prevent charging by the irradiation of electron beams by laminating an insulating film and a conductive film onto the surface of a semiconductor device in succession so that the surface of the conductive film is flattened and applying electron beams through these films. CONSTITUTION:When the potential of an internal element in a semiconductor device 21 is measured to the device 21, an insulating substance is applied onto an SiN film 27, and an insulating film 28 is formed so that the surface of the insulating film 28 is flattened. A conductive substance is applied onto the film 28, and a conductive film 29 is shaped. The semiconductor device 21 is irradiated with primary electron beams 31 through the films 29 and 28 from an electron gun, and secondary electrons 32 are emitted from the device 21. The secondary electrons 32 are detected by a detector 33. Consequently, the pattern of secondary electron beams substantially has no contrast by the irregularities of a shape. A charging phenomenon at the time of the irradiation of electron beams is prevented by the conductive film shaped to the surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62219419A JPS6471142A (en) | 1987-05-06 | 1987-09-01 | Measurement of potential of semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11132487 | 1987-05-06 | ||
JP62219419A JPS6471142A (en) | 1987-05-06 | 1987-09-01 | Measurement of potential of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6471142A true JPS6471142A (en) | 1989-03-16 |
Family
ID=26450746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62219419A Pending JPS6471142A (en) | 1987-05-06 | 1987-09-01 | Measurement of potential of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6471142A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5695866A (en) * | 1991-11-07 | 1997-12-09 | Toray Industries Inc. | Optical recording medium |
-
1987
- 1987-09-01 JP JP62219419A patent/JPS6471142A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5695866A (en) * | 1991-11-07 | 1997-12-09 | Toray Industries Inc. | Optical recording medium |
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