JPS6471142A - Measurement of potential of semiconductor device - Google Patents

Measurement of potential of semiconductor device

Info

Publication number
JPS6471142A
JPS6471142A JP62219419A JP21941987A JPS6471142A JP S6471142 A JPS6471142 A JP S6471142A JP 62219419 A JP62219419 A JP 62219419A JP 21941987 A JP21941987 A JP 21941987A JP S6471142 A JPS6471142 A JP S6471142A
Authority
JP
Japan
Prior art keywords
electron beams
film
semiconductor device
conductive film
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62219419A
Other languages
Japanese (ja)
Inventor
Hiroyuki Hosoi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62219419A priority Critical patent/JPS6471142A/en
Publication of JPS6471142A publication Critical patent/JPS6471142A/en
Pending legal-status Critical Current

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Landscapes

  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To prevent charging by the irradiation of electron beams by laminating an insulating film and a conductive film onto the surface of a semiconductor device in succession so that the surface of the conductive film is flattened and applying electron beams through these films. CONSTITUTION:When the potential of an internal element in a semiconductor device 21 is measured to the device 21, an insulating substance is applied onto an SiN film 27, and an insulating film 28 is formed so that the surface of the insulating film 28 is flattened. A conductive substance is applied onto the film 28, and a conductive film 29 is shaped. The semiconductor device 21 is irradiated with primary electron beams 31 through the films 29 and 28 from an electron gun, and secondary electrons 32 are emitted from the device 21. The secondary electrons 32 are detected by a detector 33. Consequently, the pattern of secondary electron beams substantially has no contrast by the irregularities of a shape. A charging phenomenon at the time of the irradiation of electron beams is prevented by the conductive film shaped to the surface.
JP62219419A 1987-05-06 1987-09-01 Measurement of potential of semiconductor device Pending JPS6471142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62219419A JPS6471142A (en) 1987-05-06 1987-09-01 Measurement of potential of semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11132487 1987-05-06
JP62219419A JPS6471142A (en) 1987-05-06 1987-09-01 Measurement of potential of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6471142A true JPS6471142A (en) 1989-03-16

Family

ID=26450746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219419A Pending JPS6471142A (en) 1987-05-06 1987-09-01 Measurement of potential of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6471142A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5695866A (en) * 1991-11-07 1997-12-09 Toray Industries Inc. Optical recording medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5695866A (en) * 1991-11-07 1997-12-09 Toray Industries Inc. Optical recording medium

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