CN112530805A - 横向双扩散金属氧化物半导体器件及制作方法、电子装置 - Google Patents
横向双扩散金属氧化物半导体器件及制作方法、电子装置 Download PDFInfo
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Abstract
本发明提供了一种横向双扩散金属氧化物半导体器件及制作方法、电子装置。所述方法包括:提供半导体衬底,在所述半导体衬底中形成漂移区;在所述漂移区中形成阱区和漏区,在所述阱区中形成源区和沟道;执行第一类型的离子注入,以在所述漂移区的底部形成沿所述阱区到所述漏区方向延伸的第一离子注入区;在所述第一离子注入区上方形成若干相互间隔的深沟槽隔离结构和位于相邻深沟槽隔离结构之间的鳍片结构;形成第二离子注入区,以使所述第一离子注入区和所述第二离子注入区交替设置;对鳍片结构的侧壁执行第二类型的离子注入,以在所述鳍片结构的侧壁上形成侧墙离子注入区,其中,所述第一类型的离子与第二类型的离子类型不同。
Description
技术领域
本发明涉及半导体技术领域,具体而言涉及一种横向双扩散金属氧化物半导体器件及制作方法、电子装置。
背景技术
在高压MOS管的发展过程中,主要有垂直双扩散金属氧化物半导体(VDMOS)和横向双扩散金属氧化物半导体(LDMOS)两种类型。虽然垂直双扩散金属氧化物半导体(VDMOS)导通电阻小,占用版图面积也小,但是它是纵向结构,不易和低压CMOS电路兼容。而横向双扩散金属氧化物半导体(LDMOS)具有更好的热稳定性和频率稳定性、更高的增益和耐久性、更低的反馈电容和热阻,以及恒定的输入阻抗和更简单的偏流电路,因此,在目前得到了比较广泛的应用。
在目前的高压LDMOS器件中,常规结构Single Resurf(SR,Resurf即reducesurface field降低表面电场技术)、Double Resurf(DR)、Triple Resurf(TR)以及mutiResurf LDMOS器件已经广泛的应用。想要在同等耐压基础上得到更低的导通电阻,则需要使用super-junction(SJ,超结)技术。然而,目前为止SJ技术仅被成熟应用在垂直分离晶体管(vertical discrete transistor),譬如VDMOS或IGBT中。在横向晶体管(例如LDMOS)中使用SJ技术时,会遇到很多问题,首先比如如何使导通电阻变得更低,而且工艺更加简单、兼容。
因此有必要提出一种横向双扩散金属氧化物半导体器件及其制作方法,以至少部分解决上述问题。
发明内容
在发明内容部分中引入了一系列简化形式的概念,这将在具体实施方式部分中进一步详细说明。本发明的发明内容部分并不意味着要试图限定出所要求保护的技术方案的关键特征和必要技术特征,更不意味着试图确定所要求保护的技术方案的保护范围。
为了克服目前存在的至少一个问题,本发明一方面提供一种横向双扩散金属氧化物半导体器件的制作方法,所述制作方法包括:
提供半导体衬底,在所述半导体衬底中形成漂移区;
在所述漂移区中形成阱区和漏区,在所述阱区中形成源区和沟道;
对位于所述阱区和所述漏区之间的漂移区区域执行第一类型的离子注入,以在所述漂移区的底部形成沿所述阱区到所述漏区方向延伸的第一离子注入区;
在所述第一离子注入区上方形成若干相互间隔的深沟槽隔离结构和位于相邻深沟槽隔离结构之间的鳍片结构,以露出部分所述第一离子注入区;
在所述深沟槽隔离结构中执行第二类型的离子注入,形成第二离子注入区,以使所述第一离子注入区和所述第二离子注入区交替设置;
对鳍片结构的侧壁执行第二类型的离子注入,以在所述鳍片结构的侧壁上形成侧墙离子注入区,其中,所述第一类型的离子与第二类型的离子类型不同。
可选地,所述第一类型的离子为N型,所述第二类型的离子为P型。
可选地,在形成所述第一离子注入区的过程中包括:在所述阱区和所述漏区之间的所述漂移区上形成掩膜层,以定义所述第一离子注入区的区域;
执行第一类型的离子注入,以形成所述第一离子注入区;
继续执行第一类型的离子注入,以在所述第一离子注入区的上方形成第一类型离子的阱区。
可选地,对所述鳍片结构的顶部执行第二类型的离子注入,以在所述鳍片结构的顶部形成顶部注入区或在所述鳍片结构的顶部以下形成埋层注入区。
可选地,以倾斜的注入角度对鳍片结构的侧壁执行第二类型的离子注入。
本发明还提供了一种横向双扩散金属氧化物半导体器件,包括:
半导体衬底,在所述半导体衬底中形成有漂移区;
在所述漂移区中形成有阱区和漏区,在所述阱区中有源区和沟道;
在所述漂移区中形成有位于所述阱区和所述漏区之间若干相互间隔的深沟槽隔离结构和位于相邻深沟槽隔离结构之间的鳍片结构;
位于所述鳍片结构下方的第一离子注入区;
位于所述深沟槽隔离结构下方的第二离子注入区;
位于所述鳍片结构侧壁上的侧墙离子注入区;
其中,所述第一离子注入区和所述第二离子注入区沿所述阱区到所述漏区的方向延伸,第一离子注入区的类型与所述侧墙离子注入区的离子类型相同,与第二离子注入区的离子类型不同。
可选地,第一离子注入区和所述侧墙离子注入区为N型,所述第二离子注入区为P型。
可选地,还包括位于所述鳍片结构顶部的顶部注入区或位于所述鳍片结构的顶部以下的埋层注入区,顶部注入区或埋层注入区为P型。
可选地,所述鳍片结构形成于N型的阱区中。
可选地,还包括位于所述漂移区中的场隔离结构,位于N型的阱区与沟道和漏极之间的区域。
本发明还提供了一种电子装置,所述电子装置包括权利要求5至9之一所述的横向双扩散金属氧化物半导体器件。
根据本发明的横向双扩散金属氧化物半导体器件的制作方法,在所述方法中首先执行离子注入,在形成深沟槽隔离结构和鳍片结构,并且在深沟槽隔离结构执行离子注入,在漂移区的底部形成交替设置的第一离子注入区和所述第二离子注入区,从而形成位于漂移区底部的超结。然后再斜角注入对鳍片结构的侧壁执行第二类型的离子注入,以在所述鳍片结构的侧壁上形成侧墙离子注入区,深沟槽隔离结构之间的阱区在其间耐压的时候通过两边的侧墙离子注入区来完全耗尽,阱区的浓度比漂移区高很多,使得导通电阻在超结(super junction)LDMOS的基础上进一步降低,这种结构有超结(super junction)和侧墙离子注入区(sidewall)同时作用于漂移区,降低表面电场,提升导通能力,形成为沟槽型3DRESURF LDMOS。
附图说明
本发明的下列附图在此作为本发明的一部分用于理解本发明。附图中示出了本发明的实施例及其描述,用来解释本发明的原理。
附图中:
图1A-图1D示出了根据本发明一实施方式的横向双扩散金属氧化物半导体器件的制作方法依次实施各步骤所获得器件的剖面示意图;
图2A示出了根据本发明一实施方式的横向双扩散金属氧化物半导体器件的电流流通方向的横截面示意图;
图2B示出了根据本发明另一实施方式的横向双扩散金属氧化物半导体器件的电流流通方向的横截面示意图;
图2C示出了根据本发明又一实施方式的横向双扩散金属氧化物半导体器件的电流流通方向的横截面示意图;
图3示出根据本发明另一实施方式的横向双扩散金属氧化物半导体器件的制作方法的步骤流程图。
具体实施方式
在下文的描述中,给出了大量具体的细节以便提供对本发明更为彻底的理解。然而,对于本领域技术人员而言显而易见的是,本发明可以无需一个或多个这些细节而得以实施。在其他的例子中,为了避免与本发明发生混淆,对于本领域公知的一些技术特征未进行描述。
应当理解的是,本发明能够以不同形式实施,而不应当解释为局限于这里提出的实施例。相反地,提供这些实施例将使公开彻底和完全,并且将本发明的范围完全地传递给本领域技术人员。在附图中,为了清楚,层和区的尺寸以及相对尺寸可能被夸大自始至终相同附图标记表示相同的元件。
应当明白,当元件或层被称为“在…上”、“与…相邻”、“连接到”或“耦合到”其它元件或层时,其可以直接地在其它元件或层上、与之相邻、连接或耦合到其它元件或层,或者可以存在居间的元件或层。相反,当元件被称为“直接在…上”、“与…直接相邻”、“直接连接到”或“直接耦合到”其它元件或层时,则不存在居间的元件或层。应当明白,尽管可使用术语第一、第二、第三等描述各种元件、部件、区、层和/或部分,这些元件、部件、区、层和/或部分不应当被这些术语限制。这些术语仅仅用来区分一个元件、部件、区、层或部分与另一个元件、部件、区、层或部分。因此,在不脱离本发明教导之下,下面讨论的第一元件、部件、区、层或部分可表示为第二元件、部件、区、层或部分。
空间关系术语例如“在…下”、“在…下面”、“下面的”、“在…之下”、“在…之上”、“上面的”等,在这里可为了方便描述而被使用从而描述图中所示的一个元件或特征与其它元件或特征的关系。应当明白,除了图中所示的取向以外,空间关系术语意图还包括使用和操作中的器件的不同取向。例如,如果附图中的器件翻转,然后,描述为“在其它元件下面”或“在其之下”或“在其下”元件或特征将取向为在其它元件或特征“上”。因此,示例性术语“在…下面”和“在…下”可包括上和下两个取向。器件可以另外地取向(旋转90度或其它取向)并且在此使用的空间描述语相应地被解释。
在此使用的术语的目的仅在于描述具体实施例并且不作为本发明的限制。在此使用时,单数形式的“一”、“一个”和“所述/该”也意图包括复数形式,除非上下文清楚指出另外的方式。还应明白术语“组成”和/或“包括”,当在该说明书中使用时,确定所述特征、整数、步骤、操作、元件和/或部件的存在,但不排除一个或更多其它的特征、整数、步骤、操作、元件、部件和/或组的存在或添加。在此使用时,术语“和/或”包括相关所列项目的任何及所有组合。
为了彻底理解本发明,将在下列的描述中提出详细的结构及步骤,以便阐释本发明提出的技术方案。本发明的较佳实施例详细描述如下,然而除了这些详细描述外,本发明还可以具有其他实施方式。
下面结合图1A~图1D对本发明提出的横向双扩散金属氧化物半导体器件的制作方法进行说明。
需要说明的是,对于本发明的提出的横向双扩散金属氧化物半导体器件,其漂移区,阱区、栅极,源区、漏区等结构的形成均采用横向双扩散金属氧化物半导体器件的常规的制作方法,在此不再赘述。下面主要对本发明的提出的横向双扩散金属氧化物半导体器件的超结的形成过程进行说明。
如图3以及图1A~图1D所示,制作横向双扩散金属氧化物半导体器件的方法包括:
步骤S1:提供半导体衬底,在所述半导体衬底中形成漂移区;
步骤S2:在所述漂移区中形成阱区和漏区,在所述阱区中形成源区和沟道;
步骤S3:对位于所述阱区和所述漏区之间的漂移区区域执行第一类型的离子注入,以在所述漂移区的底部形成沿所述阱区到所述漏区方向延伸的第一离子注入区;
步骤S4:在所述第一离子注入区上方形成若干相互间隔的深沟槽隔离结构和位于相邻深沟槽隔离结构之间的鳍片结构,以露出部分所述第一离子注入区;
步骤S5:在所述深沟槽隔离结构中执行第二类型的离子注入,形成第二离子注入区,以使所述第一离子注入区和所述第二离子注入区交替设置;
步骤S6:对鳍片结构的侧壁执行第二类型的离子注入,以在所述鳍片结构的侧壁上形成侧墙离子注入区,其中,所述第一类型的离子与第二类型的离子类型不同。
下面结合附图图1A~图1D对所述方法作进一步详细的说明。
首先,在步骤S1中,如图1A所示,提供半导体衬底101,在所述半导体衬底中形成漂移区102。
具体地,所述半导体衬底101可以是以下所提到的材料中的至少一种:硅、绝缘体上硅(SOI)、绝缘体上层叠硅(SSOI)、绝缘体上层叠锗化硅(S-SiGeOI)、绝缘体上锗化硅(SiGeOI)以及绝缘体上锗(GeOI)等。
在本发明的一示例中,其中所述半导体衬底为P型半导体衬底。
其中,所述漂移区102为N型漂移区,所述漂移区102的形成方法可以为离子注入等。
在步骤S2中,在所述漂移区102形成阱区109和漏区104,在所述阱区中形成源区110和沟道。
具体地,如图1A所示,在所述漂移区中在源区110和漏区104之间的区域形成厚度大于0.5微米的局部氧化层隔离结构105(即场氧,field oxide或FOX),用于起到隔离作用,其具体实现方法为通过高温处理在沟道和N+漏区104之间形成厚度大于0.5微米的氧化层隔离结构105,之后通过高能注入形成N型注入区和P型注入区。
所述器件还包括栅极结构108,其中,栅极结构108可以为多晶硅栅极或者金属栅极,其制备方法可以包括沉积栅极材料层并图案化,以形成栅极。
在形成栅极结构108之后,然后执行源漏注入,进而形成源区110和漏区104。
在步骤S3中,如图1A所示,在所述漂移区102中位于所述阱区和所述漏区之间的区域执行第一类型的离子注入,以在所述漂移区的底部形成沿所述阱区到所述漏区方向延伸的第一离子注入区106。
具体地,如图1A所示,在该步骤中形成所述第一离子注入区106的方法包括以下步骤:
步骤S31:在所述漂移区102上形成掩膜层,以用于定义后续交替形成第一离子注入区和第二离子注入区的区域。
其中,所述掩膜层可以选用常规的掩膜层,例如可以选用光刻胶层,其更加容易去除。
步骤S32:以所述掩膜层为掩膜执行离子注入,以在所述漂移区的底部形成第一离子注入区106。
其中,在该步骤中,所述沿所述第一离子注入区106的延伸方向为沿阱区到所述漏区方向延伸。
在本发明的一具体实施方式中,所述第一类型的离子为N型,因此第一离子注入区106为N型。
通过控制所述第一类型的离子注入的能量来控制所述第一离子注入区106的深度,以保证所述第一离子注入区106位于所述漂移区的底部区域,例如距离漂移区的底部的长度为整个漂移区深度的三分之一以内。
可选地,继续执行第一类型的离子注入,以在所述第一离子注入区的上方形成第一类型离子的阱区107。
在步骤S4中,在所述第一离子注入区上方形成相互间隔的若干深沟槽隔离结构和位于相邻深沟槽隔离结构之间的鳍片结构,以露出所述第一离子注入区。
如图1C所示,在该步骤中首先形成掩膜层,以用于定义形成第二离子注入区的区域。
其中,所述掩膜层可以选用常规的掩膜层,例如可以选用光刻胶层,其更加容易去除。
然后以所述掩膜层为掩膜蚀刻,以形成若干深沟槽隔离结构,其中,所述若干深沟槽隔离结构沿阱区到所述漏区方向延伸,并且若干所述深沟槽隔离结构相互间隔设置。
可选地,在形成所述深沟槽隔离结构的同时,在深沟槽隔离结构之间形成了凸出的鳍片结构,其中鳍片结构的侧壁定义了所述深沟槽隔离结构轮廓。
在步骤S5中,在所述深沟槽隔离结构中执行第二类型的离子注入,形成第二离子注入区,以使所述第一离子注入区和所述第二离子注入区交替设置。
在该步骤中,以所述鳍片结构为掩膜执行离子注入,以在所述深沟槽隔离结构形成第二离子注入区111,如图1D所示。
其中,在该步骤中,所述沿所述第二离子注入区111的延伸方向为沿阱区到所述漏区方向延伸。
在本发明的一具体实施方式中,所述第二类型的离子注入的方向为竖直向下,以在所述漂移区的底部形成所述第二离子注入区111,其中,所述第一离子注入区和所述第二离子注入区的高度相同,以使所述第一离子注入区和所述第二离子注入区交替设置。
其中,第二类型的离子为P型,因此第二离子注入区111为P型,因此形成N-P-N-P交替设置的离子注入区。
在该步骤中通过控制所述第二类型的离子注入的能量来控制所述第二离子注入区111位于所述深沟槽隔离结构的底部的表面。
在本申请中执行离子注入,在形成深沟槽隔离结构和鳍片,并且在深沟槽隔离结构执行离子注入,在漂移区的底部形成交替设置的第一离子注入区和所述第二离子注入区,从而形成位于漂移区底部的超结。
在步骤S6中,对鳍片结构的侧壁执行第二类型的离子注入,以在所述鳍片结构的侧壁上形成侧壁离子注入区112,其中,第一类型的离子与第二类型的离子类型不同。
在该步骤中,对所述鳍片结构的侧壁执行第二类型的离子注入,形成额外的侧壁离子注入区112。斜角注入、对鳍片结构的侧壁执行第二类型的离子注入,以在所述鳍片结构的侧壁上形成侧墙离子注入区,深沟槽隔离结构之间的阱区在其间耐压的时候通过两边的侧墙离子注入区来完全耗尽,阱区的浓度比漂移区高很多,使得导通电阻在超结(superjunction)LDMOS的基础上进一步降低。这种结构有超结(super junction)和侧墙离子注入区(sidewall)同时作用于漂移区,降低表面电场,提升导通能力,形成为沟槽型3D RESURFLDMOS。
在发明中所述斜角注入是指以倾斜的注入角度对鳍片结构的侧壁执行第二类型的离子注入,例如在本发明的一具体实施例中所述离子注入方向与所述鳍片结构的侧壁之间的夹角为锐角,小于90度,以更有效的形成所述侧墙离子注入区。
可选地,本发明中所述LDMOS器件可以为Single Resurf(SR,Resurf即reducesurface field降低表面电场技术)、Double Resurf(DR)、Triple Resurf(TR)以及mutiResurf LDMOS器件中的一种,例如当所述器件为SR器件时,其并没有顶部注入层,其电流的流向如图2A所示,从表面到体内电流密度越来越小,电流主要在表面流动,由于电流密度由上而下越来越小,电流大部分都从表面通道流过,如果将表面做成鳍片状,相当于增加了表面通道路径,相应的减小导通阻抗。当所述器件为DR器件时,如图2B所示,所述鳍片结构的顶部形成顶部注入区,同理,电流密度由上而下越来越小,电流大部分都从表面通道流过,将表面做成鳍片状,相当于增加了表面通道路径,相应的减小导通阻抗。当所述器件为TR器件时,如图2C所示,所述鳍片结构的顶部以下形成埋层注入区,埋层注入区打入漂移区内,电流有上方和下方两个通路,同样的,电流接近一半是走Pbury上方,Pbury下方的电流也是大部分集中在离Pbury比较近的区域,将表面做成鳍片状,相当于增加了表面通道路径,相应的减小导通阻抗。
下面对本发明所述横向双扩散金属氧化物半导体器件的结构进行详细的说明。
所述横向双扩散金属氧化物半导体器件,如图1C和1D所示,包括:
半导体衬底101,在所述半导体衬底上形成有漂移区102;
在所述漂移区中形成有阱区和漏区104,在所述阱区中有源区110和沟道;
在所述漂移区中形成有位于所述阱区和所述漏区之间相互间隔的若干深沟槽隔离结构和位于相邻深沟槽隔离结构之间的鳍片结构;
位于所述鳍片结构下方的第一离子注入区106;
位于所述深沟槽隔离结构下方的第二离子注入区111;
位于所述鳍片结构侧壁上的侧壁离子注入区112;
其中,所述第一离子注入区和所述第二离子注入区沿所述阱区到所述漏区的方向延伸,第一离子注入区的类型与所述侧壁离子注入区的类型相同,与第二离子注入区的类型不同。
具体地,在半导体衬底101上形成的N型漂移区102,在N型漂移区102中形成P型阱区109,其用作P型体区(P-body)。在P型阱区109中形成的P+有源区和N+源区,P+有源区用于引出P型阱区,N+源区用于引出源极。
在N型漂移区102中还形成有与所述P型阱区间隔设置的N+漏区104,用于引出漏极。在N型漂移区102上形成有多晶硅场板,用作栅极的电极层。多晶硅场板和P型阱区102具有重叠区域,该重叠区域即为器件的沟道。
在所述漂移区中还形成有N型缓冲区103和栅极结构108。其中,栅极结构108可以为多晶硅栅极或者金属栅极。
在所述漂移区中在源区110和漏区104之间的区域形成厚度大于0.5微米的局部氧化层隔离结构105(即场氧,field oxide或FOX),用于起到隔离作用。
超结包括交替设置的第一离子注入区106和第二离子注入区111,其中,第一离子注入区106为N型注入区,第二离子注入区111为P型注入区。P型注入区和N型注入区,P型注入区和N型注入区沿源端和漏断方向延伸。器件在关断状态下,P型注入区和N型注入区互相耗尽实现耐高压,从而可以通过同时提高P型注入区和N型注入区的掺杂浓度来降低导通电阻的目的。
为了使用超结技术进一步降低导通电阻,在N型漂移区102中形成有深沟槽隔离结构(DTI)和鳍片结构,其中所述鳍片结构底部为第一离子注入区106,所述深沟槽隔离结构底部为第二离子注入区111。
其中,在所述鳍片结构的侧壁上形成有侧壁离子注入区112,其中,第一类型的离子与第二类型的离子类型不同。
在所述鳍片结构的侧壁上形成侧墙离子注入区,深沟槽隔离结构之间的阱区在其间耐压的时候通过两边的侧墙离子注入区来完全耗尽,阱区的浓度比漂移区高很多,使得导通电阻在超结(super junction)LDMOS的基础上进一步降低。这种结构有超结(superjunction)和侧墙离子注入区(sidewall)同时作用于漂移区,降低表面电场,提升导通能力,形成为沟槽型3D RESURF LDMOS。
可选地,本发明中所述LDMOS器件可以为Single Resurf(SR,Resurf即reducesurface field降低表面电场技术)、Double Resurf(DR)、Triple Resurf(TR)以及mutiResurf LDMOS器件中的一种,例如当所述器件为SR器件时,其并没有顶部注入层,其电流的流向如图2A所示,从表面到体内电流密度越来越小,电流主要在表面流动,由于电流密度由上而下越来越小,电流大部分都从表面通道流过,如果将表面做成鳍片状,相当于增加了表面通道路径,相应的减小导通阻抗。当所述器件为DR器件时,如图2B所示,所述鳍片结构的顶部形成顶部注入区,同理,电流密度由上而下越来越小,电流大部分都从表面通道流过,将表面做成鳍片状,相当于增加了表面通道路径,相应的减小导通阻抗。当所述器件为TR器件时,如图2C所示,所述鳍片结构的顶部以下形成埋层注入区,埋层注入区打入漂移区内,电流有上方和下方两个通路,同样的,电流接近一半是走Pbury上方,Pbury下方的电流也是大部分集中在离Pbury比较近的区域,将表面做成鳍片状,相当于增加了表面通道路径,相应的减小导通阻抗。
本发明已经通过上述实施例进行了说明,但应当理解的是,上述实施例只是用于举例和说明的目的,而非意在将本发明限制于所描述的实施例范围内。此外本领域技术人员可以理解的是,本发明并不局限于上述实施例,根据本发明的教导还可以做出更多种的变型和修改,这些变型和修改均落在本发明所要求保护的范围以内。本发明的保护范围由附属的权利要求书及其等效范围所界定。
Claims (11)
1.一种横向双扩散金属氧化物半导体器件的制作方法,其特征在于,所述制作方法包括:
提供半导体衬底,在所述半导体衬底中形成漂移区;
在所述漂移区中形成阱区和漏区,在所述阱区中形成源区和沟道;
对位于所述阱区和所述漏区之间的漂移区区域执行第一类型的离子注入,以在所述漂移区的底部形成沿所述阱区到所述漏区方向延伸的第一离子注入区;
在所述第一离子注入区上方形成若干相互间隔的深沟槽隔离结构和位于相邻深沟槽隔离结构之间的鳍片结构,以露出部分所述第一离子注入区;
在所述深沟槽隔离结构中执行第二类型的离子注入,形成第二离子注入区,以使所述第一离子注入区和所述第二离子注入区交替设置;
对鳍片结构的侧壁执行第二类型的离子注入,以在所述鳍片结构的侧壁上形成侧墙离子注入区,其中,所述第一类型的离子与第二类型的离子类型不同。
2.根据权利要求1所述的制作方法,其特征在于,所述第一类型的离子为N型,所述第二类型的离子为P型。
3.根据权利要求1所述的制作方法,其特征在于,在形成所述第一离子注入区的过程中包括:在所述阱区和所述漏区之间的所述漂移区上形成掩膜层,以定义所述第一离子注入区的区域;
执行第一类型的离子注入,以形成所述第一离子注入区;
继续执行第一类型的离子注入,以在所述第一离子注入区的上方形成第一类型离子的阱区。
4.根据权利要求1所述的制作方法,其特征在于,对所述鳍片结构的顶部执行第二类型的离子注入,以在所述鳍片结构的顶部形成顶部注入区或在所述鳍片结构的顶部以下形成埋层注入区。
5.根据权利要求1所述的制作方法,其特征在于,以倾斜的注入角度对鳍片结构的侧壁执行所述第二类型的离子注入。
6.一种横向双扩散金属氧化物半导体器件,其特征在于,包括:
半导体衬底,在所述半导体衬底中形成有漂移区;
在所述漂移区中形成有阱区和漏区,在所述阱区中有源区和沟道;
在所述漂移区中形成有位于所述阱区和所述漏区之间若干相互间隔的深沟槽隔离结构和位于相邻深沟槽隔离结构之间的鳍片结构;
位于所述鳍片结构下方的第一离子注入区;
位于所述深沟槽隔离结构下方的第二离子注入区;
位于所述鳍片结构侧壁上的侧墙离子注入区;
其中,所述第一离子注入区和所述第二离子注入区沿所述阱区到所述漏区的方向延伸,第一离子注入区的类型与所述侧墙离子注入区的离子类型相同,与第二离子注入区的离子类型不同。
7.根据权利要求6所述的横向双扩散金属氧化物半导体器件,其特征在于,第一离子注入区和所述侧墙离子注入区为N型,所述第二离子注入区为P型。
8.根据权利要求6所述的横向双扩散金属氧化物半导体器件,其特征在于,还包括位于所述鳍片结构顶部的顶部注入区或位于所述鳍片结构的顶部以下的埋层注入区,顶部注入区或埋层注入区为P型。
9.根据权利要求6所述的横向双扩散金属氧化物半导体器件,其特征在于,所述鳍片结构形成于N型的阱区中。
10.根据权利要求9所述的横向双扩散金属氧化物半导体器件,其特征在于,还包括位于所述漂移区中的场隔离结构,位于N型的阱区与沟道和漏极之间的区域。
11.一种电子装置,其特征在于,所述电子装置包括权利要求6至10之一所述的横向双扩散金属氧化物半导体器件。
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