CN102129996A - Dddmos器件的制造方法 - Google Patents
Dddmos器件的制造方法 Download PDFInfo
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- CN102129996A CN102129996A CN2010100273015A CN201010027301A CN102129996A CN 102129996 A CN102129996 A CN 102129996A CN 2010100273015 A CN2010100273015 A CN 2010100273015A CN 201010027301 A CN201010027301 A CN 201010027301A CN 102129996 A CN102129996 A CN 102129996A
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CN 201010027301 CN102129996B (zh) | 2010-01-18 | 2010-01-18 | 双扩散漏高压mosfet的制造方法 |
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CN 201010027301 CN102129996B (zh) | 2010-01-18 | 2010-01-18 | 双扩散漏高压mosfet的制造方法 |
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CN102129996A true CN102129996A (zh) | 2011-07-20 |
CN102129996B CN102129996B (zh) | 2013-04-24 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103515431A (zh) * | 2012-06-18 | 2014-01-15 | 立锜科技股份有限公司 | 双扩散漏极金属氧化物半导体元件及其制造方法 |
CN112530805A (zh) * | 2019-09-19 | 2021-03-19 | 无锡华润上华科技有限公司 | 横向双扩散金属氧化物半导体器件及制作方法、电子装置 |
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US20030089960A1 (en) * | 2001-11-13 | 2003-05-15 | United Microelectronics Corp. | Asymmetric high-voltage metal-oxide-semiconductor device |
CN1591800A (zh) * | 2003-09-01 | 2005-03-09 | 上海宏力半导体制造有限公司 | 改善高压元件结构的制造方法 |
CN1964016A (zh) * | 2005-11-10 | 2007-05-16 | 上海华虹Nec电子有限公司 | 在高压集成电路中实现sti的方法 |
CN100468771C (zh) * | 2005-12-19 | 2009-03-11 | 联华电子股份有限公司 | 超高压金属氧化物半导体晶体管元件及其制造方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103515431A (zh) * | 2012-06-18 | 2014-01-15 | 立锜科技股份有限公司 | 双扩散漏极金属氧化物半导体元件及其制造方法 |
CN103515431B (zh) * | 2012-06-18 | 2016-01-20 | 立锜科技股份有限公司 | 双扩散漏极金属氧化物半导体元件及其制造方法 |
CN112530805A (zh) * | 2019-09-19 | 2021-03-19 | 无锡华润上华科技有限公司 | 横向双扩散金属氧化物半导体器件及制作方法、电子装置 |
CN112530805B (zh) * | 2019-09-19 | 2022-04-05 | 无锡华润上华科技有限公司 | 横向双扩散金属氧化物半导体器件及制作方法、电子装置 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131219 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20131219 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |