CN102129996B - 双扩散漏高压mosfet的制造方法 - Google Patents
双扩散漏高压mosfet的制造方法 Download PDFInfo
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- CN102129996B CN102129996B CN 201010027301 CN201010027301A CN102129996B CN 102129996 B CN102129996 B CN 102129996B CN 201010027301 CN201010027301 CN 201010027301 CN 201010027301 A CN201010027301 A CN 201010027301A CN 102129996 B CN102129996 B CN 102129996B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 40
- 229920005591 polysilicon Polymers 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 238000002955 isolation Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 4
- 238000009792 diffusion process Methods 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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CN 201010027301 CN102129996B (zh) | 2010-01-18 | 2010-01-18 | 双扩散漏高压mosfet的制造方法 |
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CN 201010027301 CN102129996B (zh) | 2010-01-18 | 2010-01-18 | 双扩散漏高压mosfet的制造方法 |
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CN102129996A CN102129996A (zh) | 2011-07-20 |
CN102129996B true CN102129996B (zh) | 2013-04-24 |
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CN 201010027301 Active CN102129996B (zh) | 2010-01-18 | 2010-01-18 | 双扩散漏高压mosfet的制造方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103515431B (zh) * | 2012-06-18 | 2016-01-20 | 立锜科技股份有限公司 | 双扩散漏极金属氧化物半导体元件及其制造方法 |
CN112530805B (zh) | 2019-09-19 | 2022-04-05 | 无锡华润上华科技有限公司 | 横向双扩散金属氧化物半导体器件及制作方法、电子装置 |
CN116137292A (zh) * | 2021-11-17 | 2023-05-19 | 无锡华润上华科技有限公司 | Ldmos器件及其制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1419298A (zh) * | 2001-11-13 | 2003-05-21 | 联华电子股份有限公司 | 非对称高电压金属氧化物半导体元件 |
CN1591800A (zh) * | 2003-09-01 | 2005-03-09 | 上海宏力半导体制造有限公司 | 改善高压元件结构的制造方法 |
CN1964016A (zh) * | 2005-11-10 | 2007-05-16 | 上海华虹Nec电子有限公司 | 在高压集成电路中实现sti的方法 |
CN1988175A (zh) * | 2005-12-19 | 2007-06-27 | 联华电子股份有限公司 | 超高压金属氧化物半导体晶体管元件及其制造方法 |
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- 2010-01-18 CN CN 201010027301 patent/CN102129996B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1419298A (zh) * | 2001-11-13 | 2003-05-21 | 联华电子股份有限公司 | 非对称高电压金属氧化物半导体元件 |
CN1591800A (zh) * | 2003-09-01 | 2005-03-09 | 上海宏力半导体制造有限公司 | 改善高压元件结构的制造方法 |
CN1964016A (zh) * | 2005-11-10 | 2007-05-16 | 上海华虹Nec电子有限公司 | 在高压集成电路中实现sti的方法 |
CN1988175A (zh) * | 2005-12-19 | 2007-06-27 | 联华电子股份有限公司 | 超高压金属氧化物半导体晶体管元件及其制造方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131219 |
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Effective date of registration: 20131219 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |