CN1117599A - 用于光敏抗蚀剂层的显影剂 - Google Patents
用于光敏抗蚀剂层的显影剂 Download PDFInfo
- Publication number
- CN1117599A CN1117599A CN95107303A CN95107303A CN1117599A CN 1117599 A CN1117599 A CN 1117599A CN 95107303 A CN95107303 A CN 95107303A CN 95107303 A CN95107303 A CN 95107303A CN 1117599 A CN1117599 A CN 1117599A
- Authority
- CN
- China
- Prior art keywords
- developer
- surfactant
- formula
- water
- following formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C7/00—Multicolour photographic processes or agents therefor; Regeneration of such processing agents; Photosensitive materials for multicolour processes
- G03C7/30—Colour processes using colour-coupling substances; Materials therefor; Preparing or processing such materials
- G03C7/407—Development processes or agents therefor
- G03C7/413—Developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Abstract
Description
实施例编号 | 表面活性剂 | 浓度ppm | 评价标准 | 结构质量 | |||||
阴离子的* | 非离子的**/*** | 添加剂*** | Anm50s | Bms | Cms | D | |||
123C145678C2 | 100%100%100%40%66.7%75%60%40%33.3%- | ---60%33.3%12.5%20%40%33.3%100%**** | -----12.5%20%20%33.3%- | 1000200040003000300040005000500020002000 | 12151510101619181442 | 340340270300340280280270250320 | 215225180180220200200180160180 | 1.581.511.501.671.551.401.401.501.561.80 | +++-++++++++++-- |
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEP4419166.9 | 1994-06-01 | ||
DE4419166A DE4419166A1 (de) | 1994-06-01 | 1994-06-01 | Entwickler für Photoresistschichten |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1117599A true CN1117599A (zh) | 1996-02-28 |
CN1109273C CN1109273C (zh) | 2003-05-21 |
Family
ID=6519527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN95107303A Expired - Lifetime CN1109273C (zh) | 1994-06-01 | 1995-05-31 | 用于光敏抗蚀剂层的显影剂 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5731132A (zh) |
EP (1) | EP0685767B1 (zh) |
JP (1) | JP3426055B2 (zh) |
KR (1) | KR100368671B1 (zh) |
CN (1) | CN1109273C (zh) |
DE (2) | DE4419166A1 (zh) |
SG (1) | SG34226A1 (zh) |
TW (1) | TW297870B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100421221C (zh) * | 2000-08-04 | 2008-09-24 | Az电子材料(日本)株式会社 | 用于涂膜层显影的表面活性剂水溶液 |
CN100580561C (zh) * | 2003-07-16 | 2010-01-13 | 三菱瓦斯化学株式会社 | 防蚀显影组合物 |
CN102540771A (zh) * | 2010-12-24 | 2012-07-04 | 无锡华润上华半导体有限公司 | 正性光刻胶用显影液及光刻工艺中的显影方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6372415B1 (en) | 1997-10-30 | 2002-04-16 | Kao Corporation | Resist developer |
US6063550A (en) * | 1998-04-29 | 2000-05-16 | Morton International, Inc. | Aqueous developing solutions for reduced developer residue |
US5922522A (en) * | 1998-04-29 | 1999-07-13 | Morton International, Inc. | Aqueous developing solutions for reduced developer residue |
TWI221946B (en) | 1999-01-07 | 2004-10-11 | Kao Corp | Resist developer |
US6352817B1 (en) | 1999-10-21 | 2002-03-05 | Advanced Micro Devices, Inc. | Methodology for mitigating formation of t-tops in photoresist |
JP2001215690A (ja) * | 2000-01-04 | 2001-08-10 | Air Prod And Chem Inc | アセチレン列ジオールエチレンオキシド/プロピレンオキシド付加物および現像剤におけるその使用 |
TW558736B (en) | 2000-02-26 | 2003-10-21 | Shipley Co Llc | Method of reducing defects |
WO2002023598A2 (en) * | 2000-09-15 | 2002-03-21 | Infineon Technologies North America Corp. | A method to reduce post-development defects without sacrificing throughput |
JP2002351094A (ja) * | 2001-05-22 | 2002-12-04 | Fuji Photo Film Co Ltd | 現像液組成物及び画像形成方法 |
US6613499B2 (en) * | 2001-06-12 | 2003-09-02 | Macronix International Co., Ltd. | Development method for manufacturing semiconductors |
EP1722275B1 (en) * | 2005-05-10 | 2010-10-27 | Agfa Graphics N.V. | Method for processing lithographic printing plates |
US20080008956A1 (en) * | 2006-06-23 | 2008-01-10 | Eastman Kodak Company | Positive-working imageable members with branched hydroxystyrene polymers |
KR100775848B1 (ko) | 2006-11-09 | 2007-11-12 | 금산인삼협동조합 | 기능성 홍삼과자 및 그 제조방법 |
CN102063024B (zh) * | 2010-12-24 | 2014-01-29 | 东莞市智高化学原料有限公司 | 一种显影液组成物 |
DE102014114413B3 (de) * | 2014-10-03 | 2016-02-25 | Pao-Hsien Cheng | Vorrichtung zum schnellen Lösen eines Kinderwagensitzes |
CN108137459B (zh) | 2015-10-07 | 2021-06-18 | 海名斯精细化工公司 | 润湿-防泡剂 |
CN108885412B (zh) * | 2016-03-31 | 2022-04-05 | 富士胶片株式会社 | 半导体制造用处理液及图案形成方法 |
KR102011879B1 (ko) * | 2018-12-28 | 2019-08-20 | 영창케미칼 주식회사 | 극자외선 리소그래피용 공정액 및 이를 사용한 패턴 형성 방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE474010C (de) * | 1927-04-13 | 1929-03-25 | Bernhard Neupert | Fahrtrichtungsanzeiger |
GB1573206A (en) * | 1975-11-26 | 1980-08-20 | Tokyo Shibaura Electric Co | Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices |
US4670372A (en) * | 1984-10-15 | 1987-06-02 | Petrarch Systems, Inc. | Process of developing radiation imaged photoresist with alkaline developer solution including a carboxylated surfactant |
US4613561A (en) * | 1984-10-17 | 1986-09-23 | James Marvin Lewis | Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution |
JPS6232453A (ja) * | 1985-08-06 | 1987-02-12 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト用現像液 |
JPH0638159B2 (ja) * | 1986-07-18 | 1994-05-18 | 東京応化工業株式会社 | ポジ型ホトレジスト用現像液 |
DE4027299A1 (de) * | 1990-08-29 | 1992-03-05 | Hoechst Ag | Entwicklerzusammensetzung fuer bestrahlte, strahlungsempfindliche, positiv und negativ arbeitende sowie umkehrbare reprographische schichten und verfahren zur entwicklung solcher schichten |
DE4111445A1 (de) | 1991-04-09 | 1992-10-15 | Hoechst Ag | Strahlungsempfindliches gemisch mit estern der 1,2-naphthochinon-2-diazid-sulfonsaeure und ein damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
JP3134502B2 (ja) * | 1992-06-18 | 2001-02-13 | 東レ株式会社 | 水なし平版印刷版用現像液 |
US5286606A (en) * | 1992-12-29 | 1994-02-15 | Hoechst Celanese Corporation | Process for producing a developer having a low metal ion level |
-
1994
- 1994-06-01 DE DE4419166A patent/DE4419166A1/de not_active Withdrawn
-
1995
- 1995-05-02 TW TW084104355A patent/TW297870B/zh not_active IP Right Cessation
- 1995-05-16 US US08/442,451 patent/US5731132A/en not_active Expired - Lifetime
- 1995-05-22 EP EP95107763A patent/EP0685767B1/de not_active Expired - Lifetime
- 1995-05-22 DE DE59508636T patent/DE59508636D1/de not_active Expired - Lifetime
- 1995-05-25 SG SG1995000512A patent/SG34226A1/en unknown
- 1995-05-31 JP JP13393295A patent/JP3426055B2/ja not_active Expired - Lifetime
- 1995-05-31 KR KR1019950014016A patent/KR100368671B1/ko active IP Right Grant
- 1995-05-31 CN CN95107303A patent/CN1109273C/zh not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100421221C (zh) * | 2000-08-04 | 2008-09-24 | Az电子材料(日本)株式会社 | 用于涂膜层显影的表面活性剂水溶液 |
CN100580561C (zh) * | 2003-07-16 | 2010-01-13 | 三菱瓦斯化学株式会社 | 防蚀显影组合物 |
CN102540771A (zh) * | 2010-12-24 | 2012-07-04 | 无锡华润上华半导体有限公司 | 正性光刻胶用显影液及光刻工艺中的显影方法 |
Also Published As
Publication number | Publication date |
---|---|
SG34226A1 (en) | 1996-12-06 |
JPH07333863A (ja) | 1995-12-22 |
CN1109273C (zh) | 2003-05-21 |
EP0685767A1 (de) | 1995-12-06 |
KR960001867A (ko) | 1996-01-26 |
KR100368671B1 (ko) | 2003-09-06 |
DE59508636D1 (de) | 2000-09-21 |
US5731132A (en) | 1998-03-24 |
DE4419166A1 (de) | 1995-12-07 |
TW297870B (zh) | 1997-02-11 |
EP0685767B1 (de) | 2000-08-16 |
JP3426055B2 (ja) | 2003-07-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1109273C (zh) | 用于光敏抗蚀剂层的显影剂 | |
EP0279630B1 (en) | Developer for light-sensitive lithographic printing plate capable of processing commonly the negative-type and the positive type and developer composition for light-sensitive material | |
KR100585574B1 (ko) | 미세 내식막 패턴의 형성방법 | |
KR20180126555A (ko) | 반도체 제조용 처리액, 및 패턴 형성 방법 | |
CN1074141C (zh) | 低金属离子含量的对-甲酚低聚物和光敏的组合物 | |
US4147545A (en) | Photolithographic developing composition with organic lithium compound | |
CN104797982A (zh) | 图案形成方法、电子元件的制造方法及电子元件 | |
CN1176404C (zh) | 制备正性光敏抗蚀剂组合物的方法 | |
CN1202913A (zh) | 通过螯合型离子交换树脂降低光刻胶组合物中的金属离子 | |
CN1474962A (zh) | 形成图形的方法和在其中使用的处理剂 | |
CN1229480A (zh) | 高耐热照射敏感性抗蚀剂组合物 | |
US5149614A (en) | Developer compositions for ps plates and method for developing the same wherein the developer composition contains a surfactant having an aryl group, an oxyalkylene group and a sulfate ester or sulfonic acid group | |
CN1244930A (zh) | 通过离子交换法来减少含有机极性溶剂的抗光蚀剂组合物中的金属离子污染物的方法 | |
CN1196806A (zh) | 具有低金属离子含量的表面活性剂和由其产生的显影剂的生产方法 | |
CN1074425C (zh) | 用阴离子交换树脂降低线型酚醛树脂溶液中的金属离子含量 | |
CN1116934C (zh) | 用离子交换设备减少微量金属离子的方法 | |
CN1189791C (zh) | 生产的光敏抗蚀剂组合物的方法及该组合物的用途 | |
KR100527013B1 (ko) | 감방사선성수지조성물 | |
JPS61167948A (ja) | ポジ型感光性組成物用現像液 | |
EP3208659A1 (en) | Composition for resist patterning and method for forming pattern using same | |
CN1095553C (zh) | 含2,4-二硝基-1-萘酚的正性光刻胶组合物 | |
CN1323410A (zh) | 用于正性光刻胶的混合溶剂体系 | |
KR910007227B1 (ko) | 포지티브-워킹 레지스트조성물용 현상액 | |
CN1292891A (zh) | 产生粒子少的光刻胶组合物的制造方法 | |
CN1097210C (zh) | 含有芳基联亚氨基染料的光敏组合物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Applicant after: Kellaen Aktiengesellschaft Applicant before: Hechester JSC |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: HOECHST AKTIENGESELLSCHAFT (DE) TO: CLARIANT CO., LTD. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: CLARIANT GMBH Free format text: FORMER NAME OR ADDRESS: CLARIANT CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Frankfurt, Federal Republic of Germany Patentee after: Clariant Produkte (Deutschland) GmbH Address before: Frankfurt, Federal Republic of Germany Patentee before: Kellaen Aktiengesellschaft |
|
ASS | Succession or assignment of patent right |
Owner name: AZ ELECTRONIC MATERIALS GERMAN COMPANY WIESBADEN Free format text: FORMER OWNER: CLARIANT GMBH Effective date: 20060623 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20060623 Address after: Wiesbaden Patentee after: AZ Electronic Materials (Germany) GmbH Address before: Frankfurt, Federal Republic of Germany Patentee before: Clariant Produkte (Deutschland) GmbH |
|
C17 | Cessation of patent right | ||
CX01 | Expiry of patent term |
Expiration termination date: 20150531 Granted publication date: 20030521 |