SG34226A1 - Developer for photoresist layers - Google Patents

Developer for photoresist layers

Info

Publication number
SG34226A1
SG34226A1 SG1995000512A SG1995000512A SG34226A1 SG 34226 A1 SG34226 A1 SG 34226A1 SG 1995000512 A SG1995000512 A SG 1995000512A SG 1995000512 A SG1995000512 A SG 1995000512A SG 34226 A1 SG34226 A1 SG 34226A1
Authority
SG
Singapore
Prior art keywords
developer
photoresist layers
photoresist
layers
Prior art date
Application number
SG1995000512A
Other languages
English (en)
Inventor
Karl Van Werden
Marlies Eltgen
Original Assignee
Hoechst Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Ag filed Critical Hoechst Ag
Publication of SG34226A1 publication Critical patent/SG34226A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C7/00—Multicolour photographic processes or agents therefor; Regeneration of such processing agents; Photosensitive materials for multicolour processes
    • G03C7/30—Colour processes using colour-coupling substances; Materials therefor; Preparing or processing such materials
    • G03C7/407—Development processes or agents therefor
    • G03C7/413—Developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG1995000512A 1994-06-01 1995-05-25 Developer for photoresist layers SG34226A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4419166A DE4419166A1 (de) 1994-06-01 1994-06-01 Entwickler für Photoresistschichten

Publications (1)

Publication Number Publication Date
SG34226A1 true SG34226A1 (en) 1996-12-06

Family

ID=6519527

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1995000512A SG34226A1 (en) 1994-06-01 1995-05-25 Developer for photoresist layers

Country Status (8)

Country Link
US (1) US5731132A (zh)
EP (1) EP0685767B1 (zh)
JP (1) JP3426055B2 (zh)
KR (1) KR100368671B1 (zh)
CN (1) CN1109273C (zh)
DE (2) DE4419166A1 (zh)
SG (1) SG34226A1 (zh)
TW (1) TW297870B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6372415B1 (en) 1997-10-30 2002-04-16 Kao Corporation Resist developer
US5922522A (en) * 1998-04-29 1999-07-13 Morton International, Inc. Aqueous developing solutions for reduced developer residue
US6063550A (en) * 1998-04-29 2000-05-16 Morton International, Inc. Aqueous developing solutions for reduced developer residue
TWI221946B (en) 1999-01-07 2004-10-11 Kao Corp Resist developer
US6352817B1 (en) 1999-10-21 2002-03-05 Advanced Micro Devices, Inc. Methodology for mitigating formation of t-tops in photoresist
JP2001215690A (ja) * 2000-01-04 2001-08-10 Air Prod And Chem Inc アセチレン列ジオールエチレンオキシド／プロピレンオキシド付加物および現像剤におけるその使用
TW558736B (en) * 2000-02-26 2003-10-21 Shipley Co Llc Method of reducing defects
JP2002049161A (ja) * 2000-08-04 2002-02-15 Clariant (Japan) Kk 被覆層現像用界面活性剤水溶液
WO2002023598A2 (en) * 2000-09-15 2002-03-21 Infineon Technologies North America Corp. A method to reduce post-development defects without sacrificing throughput
JP2002351094A (ja) * 2001-05-22 2002-12-04 Fuji Photo Film Co Ltd 現像液組成物及び画像形成方法
US20020187438A1 (en) * 2001-06-12 2002-12-12 Ching-Yu Chang Development method for manufacturing semiconductors
CN100580561C (zh) * 2003-07-16 2010-01-13 三菱瓦斯化学株式会社 防蚀显影组合物
DE602005024371D1 (de) * 2005-05-10 2010-12-09 Agfa Gevaert Nv Verfahren zur Verarbeitung von Flachdruckplatten
US20080008956A1 (en) * 2006-06-23 2008-01-10 Eastman Kodak Company Positive-working imageable members with branched hydroxystyrene polymers
KR100775848B1 (ko) 2006-11-09 2007-11-12 금산인삼협동조합 기능성 홍삼과자 및 그 제조방법
CN102540771A (zh) * 2010-12-24 2012-07-04 无锡华润上华半导体有限公司 正性光刻胶用显影液及光刻工艺中的显影方法
CN102063024B (zh) * 2010-12-24 2014-01-29 东莞市智高化学原料有限公司 一种显影液组成物
DE102014114413B3 (de) * 2014-10-03 2016-02-25 Pao-Hsien Cheng Vorrichtung zum schnellen Lösen eines Kinderwagensitzes
JP2018535819A (ja) 2015-10-07 2018-12-06 エレメンティス スペシャルティーズ，インコーポレイテッド．， 湿潤及び消泡剤
CN114706271A (zh) * 2016-03-31 2022-07-05 富士胶片株式会社 半导体制造用处理液及图案形成方法
KR102011879B1 (ko) * 2018-12-28 2019-08-20 영창케미칼 주식회사 극자외선 리소그래피용 공정액 및 이를 사용한 패턴 형성 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE474010C (de) * 1927-04-13 1929-03-25 Bernhard Neupert Fahrtrichtungsanzeiger
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
US4670372A (en) * 1984-10-15 1987-06-02 Petrarch Systems, Inc. Process of developing radiation imaged photoresist with alkaline developer solution including a carboxylated surfactant
US4613561A (en) * 1984-10-17 1986-09-23 James Marvin Lewis Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution
JPS6232453A (ja) * 1985-08-06 1987-02-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト用現像液
JPH0638159B2 (ja) * 1986-07-18 1994-05-18 東京応化工業株式会社 ポジ型ホトレジスト用現像液
DE4027299A1 (de) * 1990-08-29 1992-03-05 Hoechst Ag Entwicklerzusammensetzung fuer bestrahlte, strahlungsempfindliche, positiv und negativ arbeitende sowie umkehrbare reprographische schichten und verfahren zur entwicklung solcher schichten
DE4111445A1 (de) 1991-04-09 1992-10-15 Hoechst Ag Strahlungsempfindliches gemisch mit estern der 1,2-naphthochinon-2-diazid-sulfonsaeure und ein damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JP3134502B2 (ja) * 1992-06-18 2001-02-13 東レ株式会社 水なし平版印刷版用現像液
US5286606A (en) * 1992-12-29 1994-02-15 Hoechst Celanese Corporation Process for producing a developer having a low metal ion level

Also Published As

Publication number Publication date
KR960001867A (ko) 1996-01-26
KR100368671B1 (ko) 2003-09-06
DE4419166A1 (de) 1995-12-07
JP3426055B2 (ja) 2003-07-14
US5731132A (en) 1998-03-24
TW297870B (zh) 1997-02-11
EP0685767A1 (de) 1995-12-06
JPH07333863A (ja) 1995-12-22
EP0685767B1 (de) 2000-08-16
DE59508636D1 (de) 2000-09-21
CN1117599A (zh) 1996-02-28
CN1109273C (zh) 2003-05-21

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