CN111755313A - 基板处理设备 - Google Patents

基板处理设备 Download PDF

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CN111755313A
CN111755313A CN202010221967.8A CN202010221967A CN111755313A CN 111755313 A CN111755313 A CN 111755313A CN 202010221967 A CN202010221967 A CN 202010221967A CN 111755313 A CN111755313 A CN 111755313A
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田中宏治
高桥祐树
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ASM IP Holding BV
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Abstract

一种基板处理设备的示例包括：基座；轴，其支撑基座；流动控制环，其围绕基座同时相对于基座提供间隙；排气管，其布置在流动控制环正上方；板，其设置在基座上方；室，其围绕基座、流动控制环、排气管和板；以及联接部，其将轴联接至室，其中，所述联接部的至少一部分是绝缘体。

Description

基板处理设备
技术领域
描述了涉及基板处理设备的示例。
背景技术
电容耦合等离子体(CCP)广泛用于等离子体处理中。然而，可能在该设备中产生寄生电容，并且电压可能会施加到某些非预期的部分。这种意外电压施加会导致功率损耗。例如，如果在斜角的周界以外的部分产生强电场，则等离子体的均匀性可能劣化，和/或蚀刻速率可能降低。
发明内容
本文描述的一些示例可以解决上述问题。本文描述的一些示例可以提供一种将等离子体处理应用于部分基板的基板处理设备。
在一些示例中，一种基板处理设备包括：基座；轴，其支撑基座；流动控制环，其围绕基座同时相对于基座提供间隙；排气管，其布置在流动控制环正上方；板，其设置在基座上方；室，其围绕基座、流动控制环、排气管和板；以及联接部，其将轴联接至室，其中，所述联接部的至少一部分是绝缘体。
附图说明
图1是基板处理设备的构造示例；
图2是包围部的放大图；
图3A是表示电连接的一示例的电路图；
图3B是表示电连接的另一示例的电路图；
图4示出了电磁场的模拟结果；
图5示出了电磁场的另一模拟结果；
图6是与另一示例相关的基板处理设备的剖视图；以及
图7是与又一示例相关的基板处理设备的剖视图。
具体实施方式
将参考附图描述基板处理设备。相同或相似的元件可以用相同的符号表示，因此可以省略描述的重复。
图1示出了基板处理设备10的构造示例。可以将基板处理设备10设置为基板的斜角处理设备。斜角处理包括斜角蚀刻、斜角沉积和斜角膜重整。基板处理设备10包括用作接地电极的室12。室12由金属制成。在室12中，作为处理对象的基板放置在基座14上。由于基座14的几何形状小于基板，因此斜角从基座14突出。换句话说，整个斜角被暴露。基座14例如由Al或Ti制成。
基座14由轴16支撑。根据一示例，提供了宽部18，其与轴16连续并且比轴16宽。宽部18可以布置在室12外部。室12的包围轴16的部分称为包围部12a。波纹管20设置在包围部12a与宽部18之间。波纹管20通过来自外部的力而伸缩，因此使基座14降低或升高。
图2是包围部12a及其附近的放大图。波纹管20维持室12内部的真空。
宽部18和波纹管20用作将轴16联接至室12的联接部。例如，联接部的至少一部分可以是绝缘体。根据一示例，宽部18可以是绝缘体。根据另一示例，波纹管20可以是绝缘体。这种绝缘体材料可以是介电常数小于10的低介电常数材料。例如，绝缘体是石英、氧化铝或含氟树脂。宽部18和波纹管20的组合是联接部的一示例。在其他示例中，可以提供具有任何构造的联接部，其使得基座14能够被降低和升高并且将轴16联接至室12。
图3A和3B是表示室12与轴16之间的电连接的一方面的示例的电路图。将包围部12a和轴16分离产生电容器C1。将轴16和室12联接引起第一电阻器R1，其可归因于接触电阻等。图3A示出了包括电容器C1和第一电阻器R1的电路。图3B示出了当联接部的至少一部分由绝缘体制成时的电路。
这样，将包围部12a与轴16分离并选择绝缘体作为联接部的至少一部分能够使基座14处于浮动状态。换句话说，增加基座14和室12之间的阻抗值使基座14与室12电分离。
现在回到描述图1中的构造。流动控制环(FCR)30邻近基座14设置。FCR30围绕基座14，同时相对于基座14提供间隙。FCR30可以例如是金属，比如Al或Ti。根据一示例，FCR30的底表面与室12接触，从而使FCR30接地。
排气管32布置在FCR30正上方。排气管32在平面图中可以形成为圆形，类似于FCR30。排气管32提供用于将在处理中使用的气体排放到室12的外部的通道。排气管32可以由例如陶瓷或氧化铝制成。
外板40放置在排气管32上。内板42放置在外板40上。根据一示例，外板40围绕内板42并且设置在FCR30正上方。根据一示例，内板42设置在基座14正上方。通孔可以设置在内板42的中央。外板40和内板42有时统称为板。
外板40和内板42构成一个板。它们可能是可分离的，也可能是不可分离的。例如，内板42是绝缘体，而外板40是金属。内板42可以是低介电常数材料。低介电常数材料是例如石英、氧化铝或含氟树脂。外板40可以是施加高频波的电极。
室12围绕基座14、FCR30、排气管32、外板40和内板42。气体源50和52设置在室12外部。根据一示例，气体源50向内板42的通孔供应惰性气体，从而产生径向气流，其在平面图中于内板42和基座14之间。该气流抑制在内板42和基座14之间产生大量等离子体。并且，气体源52从下侧向基座14和FCR30之间的间隙供应反应气体。这种气流使得能够蚀刻基板的斜角附近。
这样的气流就是一示例。根据其他示例，可以采用任何气体源和气流，其可以供应允许在斜角附近产生等离子体的气体。因此，气体可以从上侧供应，并且也可以从下侧供应。
图4示出了在基座被设定为浮动的模型中的电磁场的模拟结果。在红色区域中，电场强度高，而在蓝色区域中，电场强度低。该模拟采用基板设置在基板处理设备中的模型。向外板40施加高频功率使得外板40和FCR30之间的空间中的电场强度得以增强。另一方面，因为基座被设定为浮动的，所以相对于基座14的RF损耗减小，从而基座14与内板42之间的电场强度减小。选择低介电常数材料作为内板42也有助于降低基座14和内板42之间的电场强度。合成阻抗大于500欧姆，其路径是从板通过基座14、轴和联接部到室12，因此有助于减少异常放电。
图5基于图4中的模型示出了当内板42是金属并且基座14是接地金属时的电磁场的模拟结果。在这种情况下，因为在内板42和基座14之间产生了强电场，所以可以构想到异常放电。
因此，采用硬件构造，其增强了在不希望产生等离子体的部分处的阻抗。从而，电场强度降低，并且RF被有效地供应到旨在产生等离子体的区域。降低电场强度的方法包括使用低介电常数材料并且在相关部分处具有浮动电位。图1至3的构造是示例。具有与图1至3不同的构造的基板处理设备还可以减少异常放电并以类似方式提供稳定放电。
图6是与另一示例相关的基板处理设备的剖视图。在该示例中，包围部12a由绝缘体构成，使得基座14是浮动的。包围部12a例如是石英、氧化铝或含氟树脂。在这种情况下，将包围部12a与金属室12区分开。选择低介电常数材料用于包围部12a可使金属室12和轴16之间的电气距离变宽，并且使金属室12和轴16被电隔离。因此，可以进一步提高通过基座14到室12的路径的阻抗。
图7是与又一示例相关的基板处理设备的剖视图。FCR30包括与室12接触的金属部30a和位于排气管32正下方的绝缘体部30b。根据一示例，金属部30a和绝缘体部30b在FCR30的顶表面处暴露，并且仅金属部30a在FCR30的底表面处暴露。FCR30的顶表面可以是平面表面，从而不干扰至排气管32的气流。例如，绝缘体部30b是石英、氧化铝或含氟树脂。
排气管32是绝缘体。排气管32的材料例如是石英、氧化铝或含氟树脂。
以低阻抗联接外板40和FCR30为该路径有效地提供了射频能量。然而，在FCR30和排气管32之间产生高电场会在该部分处引起等离子体的高浓度。因此，如上所述，将绝缘体部30b设置在FCR30处。由此，虽然外板40和FCR30以低阻抗联接，但是可以提高排气管32和FCR30的阻抗。因此，可以减少在排气管32正下方的部分处的放电。
当将板放置在基座14和FCR30上方时，可以通过以下方式定义阻抗：
(1)第一阻抗，其是穿过板和基座14的路径的阻抗，
(2)第二阻抗，其是穿过板和FCR30的路径的阻抗，以及
(3)第三阻抗，其是穿过排气管32的路径的阻抗。
根据一示例，第一至第三阻抗中的第二阻抗可被最小化。由此，在外板40和FCR30之间产生局部等离子体允许对基板的斜角进行等离子体处理。
例如，如果内板42与基座14之间的距离为d1，内板42和基座14相对的面积为S1，置于内板42与基座14之间的材料的介电常数为ε1且施加到外板40上的等离子体激发频率为f1，则可以将第一阻抗d1/2πf1ε1S1设定为高于50欧姆。为了实现这一点，例如，可以采用石英等作为内板42，或者可以调节d1和S1。注意，如果f1为13.56MHz且ε1为空气的介电常数，则将d1/S1设定为高于0.3777。
例如，如果排气管32与FCR30之间的距离为d2，排气管32与FCR30相对的面积为S2，置于排气管32与FCR30之间的材料的介电常数为ε2并且施加到外板40上的等离子体激发频率为f2，则可以将第三阻抗d2/2πf2ε2S2设定为高于50欧姆。为了实现这一点，例如，可以采用石英作为排气管32，可以调节d2和S2，或者可以采用石英作为图7中的绝缘体部30b。注意，如果f2为13.56MHz且ε2为空气的介电常数，则将d2/S2设定为高于0.3777。可以将另一第三阻抗(其是穿过排气管32和室12的路径的阻抗)设定为高于50欧姆。
根据另一示例，可以将d1/2πf1ε1S1设定为高于500欧姆，可以将d2/2πf2ε2S2设定为高于500欧姆，并且可以将另一第三阻抗设定为高于500欧姆。在其他示例中，可以选择其他值。
因此，虽然将第一阻抗和第三阻抗设定为高值，但例如将第二阻抗设定为小于50欧姆，从而可以在外板40和FCR30之间产生足够的等离子体。具有潜在异常放电的部分根据设备的构造而变化。因此，可以采用任何构造，其中将放置斜角的空间中的阻抗设定为低，而将其他空间中的阻抗设定为高。

Claims (13)

1.一种基板处理设备，包括：
基座；
轴，其支撑基座；
流动控制环，其围绕基座同时相对于基座提供间隙；
排气管，其布置在流动控制环正上方；
板，其设置在基座上方；
室，其围绕基座、流动控制环、排气管和板；以及
联接部，其将轴联接至室，其中，所述联接部的至少一部分是绝缘体。
2.根据权利要求1所述的基板处理设备，其中，所述联接部包括宽部和波纹管，其中，所述宽部与所述轴连续且比所述轴宽，并且布置在所述室外部，所述波纹管设置在包围部和宽部之间，所述包围部将轴包围在室中。
3.根据权利要求1或2所述的基板处理设备，其中，所述绝缘体是石英、氧化铝或含氟树脂。
4.根据权利要求1或2所述的基板处理设备，其中，所述板包括内板和外板，所述内板设置在所述基座正上方并且是绝缘体，所述外板围绕所述内板且设置在所述流动控制环正上方并且是金属。
5.根据权利要求1或2所述的基板处理设备，其中，路径的合成阻抗大于500欧姆，所述路径从所述板通过所述基座、轴和联接部到所述室。
6.根据权利要求1所述的基板处理设备，其中，所述绝缘体包围所述轴，并且设置在所述室与所述轴之间。
7.一种基板处理设备，包括：
基座；
流动控制环，其围绕基座同时相对于基座提供间隙；
排气管，其布置在流动控制环正上方；
板，其设置在基座上方；以及
室，其围绕基座、流动控制环、排气管和板，
其中，所述流动控制环包括与所述室接触的金属部和置于所述排气管正下方的绝缘体部。
8.根据权利要求7所述的基板处理设备，其中，所述金属部和绝缘体部在所述流动控制环的顶表面处暴露，并且仅所述金属部在所述流动控制环的底表面处暴露。
9.根据权利要求7或8所述的基板处理设备，其中，所述排气管是绝缘体。
10.根据权利要求7或8所述的基板处理设备，其中，所述绝缘体部是石英、氧化铝或含氟树脂。
11.一种基板处理设备，包括：
基座；
流动控制环，其围绕基座同时相对于基座提供间隙；
排气管，其布置在流动控制环正上方；
板，其设置在基座和流动控制环上方；以及
室，其围绕基座、流动控制环、排气管和板，
其中，第一阻抗是穿过所述板和基座的路径的阻抗，第二阻抗是穿过所述板和流动控制环的路径的阻抗，第三阻抗是穿过所述排气管和流动控制环的路径的阻抗，并且所述第一阻抗至第三阻抗中的第二阻抗被最小化。
12.根据权利要求11所述的基板处理设备，
其中，所述板与基座之间的距离为d1，所述板和基座相对的面积为S1，置于所述板与基座之间的材料的介电常数为ε1，施加到所述板上的等离子体激发频率为f1，并且将d1/2πf1ε1S1设定为高于50欧姆，并且
其中，所述排气管与流动控制环之间的距离为d2，所述排气管与流动控制环相对的面积为S2，置于所述排气管与流动控制环之间的材料的介电常数为ε2，施加到所述板上的等离子体激发频率为f2，并且将d2/2πf2ε2S2设定为高于50欧姆。
13.根据权利要求12所述的基板处理设备，
其中，将d1/2πf1ε1S1设定为高于500欧姆，并且将d2/2πf2ε2S2设定为高于500欧姆。
CN202010221967.8A 2019-03-28 2020-03-26 基板处理设备 Pending CN111755313A (zh)

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