CN111725127A - 晶片载置装置及其制法 - Google Patents

晶片载置装置及其制法 Download PDF

Info

Publication number
CN111725127A
CN111725127A CN202010181643.6A CN202010181643A CN111725127A CN 111725127 A CN111725127 A CN 111725127A CN 202010181643 A CN202010181643 A CN 202010181643A CN 111725127 A CN111725127 A CN 111725127A
Authority
CN
China
Prior art keywords
flat plate
peripheral portion
outer peripheral
ceramic
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202010181643.6A
Other languages
English (en)
Other versions
CN111725127B (zh
Inventor
园田敬典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=72513668&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN111725127(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of CN111725127A publication Critical patent/CN111725127A/zh
Application granted granted Critical
Publication of CN111725127B publication Critical patent/CN111725127B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/6015—Applying energy, e.g. for the soldering or alloying process using conduction, e.g. chuck heater, thermocompression

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本发明提供晶片载置装置及其制法，所述晶片载置装置可以是一种静电卡盘加热器(10)，其具备：上表面具有晶片载置面(20a)，且内置有电极(22)、(24)、(28)的陶瓷平板(20)；配置于陶瓷平板(20)的与晶片载置面(20a)相反侧的下表面(20b)的冷却平板(30)；以及将陶瓷平板(20)与冷却平板(30)进行粘接的树脂制的粘接片层(40)。作为陶瓷平板(20)的粘接面的下表面(20b)和作为冷却平板(30)的粘接面的上表面(30a)中，外周部(20o)、(30o)的表面粗糙度Ra比内周部(20i)、(30i)大。

Description

晶片载置装置及其制法
技术领域
本发明涉及晶片载置装置及其制法。
背景技术
作为晶片载置装置，已知将上表面具有晶片载置面的圆盘状陶瓷平板和配置于陶瓷平板的与晶片载置面相反侧的下表面的圆盘状冷却平板用树脂制粘接片粘接而成的晶片载置装置(例如专利文献1)。专利文献1的晶片载置装置通过将陶瓷平板与冷却平板利用粘接片贴合以制成层叠体，将层叠体一边加热一边真空压制来制造。
现有技术文献
专利文献
专利文献1：日本特开2009-71023号公报
发明内容
然而，对于专利文献1的晶片载置装置而言，有时粘接片层的厚度在外周部变薄，粘接片层的厚度不均匀。如果粘接片层的厚度不均匀，则隔着粘接片层的陶瓷平板与冷却平板之间的导热产生差异，晶片的面内温度变得不均匀。
本发明是为了解决这样的课题而提出的，其主要目的在于使粘接片层的厚度变得均匀，使晶片的面内温度变得均匀。
本发明的晶片载置装置具备：
圆盘状的陶瓷平板，其上表面具有晶片载置面，且内置有电极；
圆盘状的冷却平板，其配置于上述陶瓷平板的与上述晶片载置面相反侧的下表面；以及
树脂制的粘接片层，其将位于上述陶瓷平板的下表面的粘接面与位于上述冷却平板的上表面的粘接面进行粘接，
上述陶瓷平板的粘接面和上述冷却平板的粘接面中的至少一者，外周部的表面粗糙度Ra比内周部大。
该晶片载置装置中，位于陶瓷平板的下表面的粘接面和位于冷却平板的上表面的粘接面中的至少一者，外周部的表面粗糙度(算术平均粗糙度)Ra比内周部大。在两个粘接面中内周部与外周部的表面粗糙度Ra都相同的情况下，在压制时等，外周部的粘接片层与内周部相比易于变薄。认为这是因为，被陶瓷平板和冷却平板所夹持的粘接片仅外周没有被约束，越是外周部则越易于伸展。因此，如果在粘接片易于伸展的外周部使粘接面的表面粗糙度Ra变大，则外周部的粘接片的伸展由于锚定效应而被抑制，能够使形成晶片载置装置的粘接片层的厚度均匀。因此，能够使晶片的面内温度均匀。如果在两个粘接面中，外周部的表面粗糙度Ra都比内周部大，则能够使粘接片层的厚度更均匀，是优选的。另外，在使内周部的粘接面的表面粗糙度Ra变大而成为与外周部的表面粗糙度Ra相同的情况下，则不仅外周部，在内周部的粘接片的伸展也得以抑制，因此，外周部的粘接片的层仍然比内周部薄。因此，需要使外周部的表面粗糙度Ra比内周部大。表面粗糙度Ra大的部分即外周部可以设与比粘接面直径的85％相比更靠外周的部分，也可以设为与粘接面直径的90％相比更靠外周的部分，也可以设为与粘接面直径的95％相比更靠外周的部分。
另外，在本说明书中，“上”“下”并不是表示绝对的位置关系，而是表示相对的位置关系。因此，根据晶片载置装置的朝向，“上”“下”会成为“下”“上”，或成为“左”“右”，或成为“前”“后”。
本发明的晶片载置装置中，上述电极可以为加热电极，并分别内置于上述陶瓷平板中与上述内周部对应的内周区域和上述陶瓷平板中与上述外周部对应的外周区域。如果使粘接面的外周部的表面粗糙度Ra变大，则如上所述，能够使粘接片层的厚度变得均匀，因此能够使因粘接片层的厚度不同所引起的导热的不同变小。然而，由于内周部与外周部的粘接面的表面粗糙度Ra不同，因此对于隔着粘接片层的陶瓷平板与冷却平板之间的导热，虽然程度低但有时会在内周部和外周部之间产生差异。这里，分别内置有内周区域的加热电极以及外周区域的加热电极。因此，能够根据内周部与外周部的导热的不同，对内周区域的加热电极与外周区域的加热电极分别进行温度控制，能够使晶片的面内温度更均匀。
本发明的晶片载置装置中，上述陶瓷平板的粘接面和上述冷却平板的粘接面的半径可以为135mm以上。在陶瓷平板的粘接面和冷却平板的粘接面的半径为135mm以上的情况下，如果接合面整面的表面粗糙度Ra没有差异，则外周部的粘接片与内周部相比特别易于变薄。因此，应用本发明的意义很大。在该情况下，内周部与外周部的边界可以设为半径135mm以上的圆。
本发明的晶片载置装置中，上述陶瓷平板的粘接面和上述冷却平板的粘接面中的至少一者，上述外周部的表面粗糙度Ra可以大于1.6μm。如果这样设计，则在外周部的锚定效应大，因此能够进一步抑制在外周部的粘接片的伸展，能够使粘接片层的厚度更均匀。内周部的表面粗糙度Ra可以设为例如1.6μm以下。在内周部粘接片适度地伸展，能够使粘接片层的厚度更均匀。
本发明的晶片载置装置的制法包括下述工序：
(a)工序，准备内置有电极的圆盘状的陶瓷平板、圆盘状的冷却平板以及粘接片；
(b)工序，使用上述粘接片将上述陶瓷平板与上述冷却平板粘接，
在上述工序(a)中准备的上述陶瓷平板和上述冷却平板中至少一者具有外周部的表面粗糙度Ra比内周部大的粘接面，
上述工序(b)中，利用外周部的表面粗糙度Ra比内周部大的上述粘接面进行粘接。
根据该晶片载置装置的制法，在外周部的粘接片的伸展由于锚定效应而被抑制，因此能够使晶片载置装置的粘接片层的厚度均匀。因此，能够使晶片的面内温度均匀。如果两个粘接面中，外周部的表面粗糙度Ra都比内周部大，则能够使粘接片层的厚度更均匀，因此更优选。
附图说明
图1为静电卡盘加热器10的立体图。
图2为图1的A-A截面图。
图3为俯视观察加热电极22、24时的说明图。
图4为陶瓷平板20的仰视图。
图5为冷却平板30的俯视图。
图6为表示静电卡盘加热器10的制法的说明图。
图7为静电卡盘加热器10的另一例的与图2对应的截面图。
符号说明
10：静电卡盘加热器，10s：层叠体，20：陶瓷平板，20a：晶片载置面，20b：下表面，20i：内周部，20o：外周部，22：内周加热电极，22a：一端，22b：另一端，22p：内周电源，24：外周加热电极，24a：一端，24b：另一端，24p：外周电源，28：静电电极，30：冷却平板，30a：上表面，30c：台阶面，30i：内周部，30o：外周部，32：冷却介质流路，40：粘接片层，40s：粘接片，B：虚拟边界，Z1：内周区域，Z2：外周区域。
具体实施方式
以下，一边参照附图一边说明本发明的优选实施方式。图1为作为本发明的晶片载置装置的一个实施例的静电卡盘加热器10的立体图，图2为图1的A-A截面图，图3为俯视观察加热电极22、24时的说明图，图4为陶瓷平板20的仰视图，图5为冷却平板30的俯视图。图6为表示静电卡盘加热器10的制法的说明图。
静电卡盘加热器10具备：上表面具有晶片载置面20a的陶瓷平板20、以及配置于陶瓷平板20的与晶片载置面20a相反侧的下表面20b的冷却平板30。作为陶瓷平板20的粘接面的下表面20b与作为冷却平板30的粘接面的上表面30a借助树脂制的粘接片层40而粘接。
陶瓷平板20为由以氮化铝、氧化铝等为代表的陶瓷材料形成的圆盘状的平板。陶瓷平板20的直径没有特别限定，例如为300mm左右。陶瓷平板20中，如图2所示那样，内置有内周加热电极22、外周加热电极24以及静电电极28。内周加热电极22和外周加热电极24例如，由以钼、钨或碳化钨作为主成分的线圈或印刷图案制成。内周加热电极22按照遍布整个内周区域Z1(图3的虚拟边界B的内侧)的方式以一笔画的要领从一端22a配线至另一端22b，所述内周区域Z1是具有与陶瓷平板20相同的中心且直径小于陶瓷平板20的圆形区域。内周区域Z1的直径没有特别限定，优选为陶瓷平板20的直径的85％以上95％以下，例如为270mm左右。内周加热电极22的一端22a与另一端22b连接至内周电源22p。外周加热电极24按照遍布整个外周区域Z2(图3的虚拟边界B的外侧)的方式以一笔画的要领从一端24a配线至另一端24b，所述外周区域Z2为包围内周区域Z1的环状区域。外周加热电极24的一端24a与另一端24b连接至外周电源24p。静电电极28例如，由以钼、钨或碳化钨作为主成分的网(mesh)或平板制成，与陶瓷平板20的晶片载置面20a平行地设置。静电电极28连接至未图示的静电电极用电源。
陶瓷平板20的下表面20b如图4所示那样，外周部20o的表面粗糙度Ra比内周部20i大。外周部20o的表面粗糙度Ra没有特别限定，例如大于1.6μm。图4中，将表面粗糙度Ra大于1.6μm的部分用阴影来表示，将其他部分用白色来表示。在俯视观察时，内周部20i与外周部20o的边界和图3的虚拟边界B一致。
冷却平板30由以铝、铝合金等为代表的金属形成，为直径比陶瓷平板20大的圆盘状的平板。冷却平板30如图2所示那样，具有直径与陶瓷平板20相同的圆形的上表面30a、以及在低于上表面30a的位置包围上表面30a的外周的圆环状的台阶面30c。上表面30a与陶瓷平板20粘接，台阶面30c上载置有未图示的聚焦环(focus ring)(也称为保护环)。在冷却平板30的内部设置有冷却介质流路32。冷却介质流路32以遍布配置有陶瓷平板20的整个区域的方式以一笔画的要领从入口设置到出口。冷却介质流路32的入口和出口连接至未图示的外部冷却装置，从出口排出的冷却介质在经外部冷却装置进行温度调整后再次返回至入口并被供给至冷却介质流路32内。
冷却平板30的上表面30a如图5所示那样，外周部30o的表面粗糙度Ra比内周部30i大。外周部30o的表面粗糙度Ra没有特别限定，例如大于1.6μm。图5中，将表面粗糙度Ra大于1.6μm的部分用阴影来表示，将其他部分用白色来表示。在俯视观察时，内周部30i与外周部30o的边界和图3的虚拟边界B一致。
粘接片层40是由以有机硅树脂、丙烯酸系树脂、聚酰亚胺树脂、环氧树脂等为代表的具有绝缘性的树脂制的粘接片形成的层，陶瓷平板20的下表面20b和冷却平板30的上表面30a是直径相同的圆形的层。粘接片层40可以为单层结构，也可以为多层结构。作为粘接片层40的具体例，可举出在聚丙烯制的芯材的两面具备丙烯酸系树脂层的片、在聚酰亚胺制的芯材的两面具备有机硅树脂层的片、环氧树脂单独的片等。
接下来，对于静电卡盘加热器10的制法进行说明。该制法包括下述工序：准备陶瓷平板20、冷却平板30以及粘接片40s的工序(a)；以及使用粘接片40s将陶瓷平板20与冷却平板30粘接的工序(b)。
在工序(a)中准备的陶瓷平板20与上述陶瓷平板20相同，内置有内周加热电极22、外周加热电极24以及静电电极28。陶瓷平板20的下表面20b如图6(a)所示那样，外周部20o的表面粗糙度Ra比内周部20i大。在制造这样的陶瓷平板20时，例如，可以准备下表面20b整面的表面粗糙度Ra为1.6μm以下的陶瓷平板，对于外周部20o实施研磨、蚀刻等粗糙化处理以使外周部20o的表面粗糙度Ra大于1.6μm。
在工序(a)中准备的冷却平板30与上述冷却平板30相同，内部设置有冷却介质流路32。冷却平板30的上表面30a如图6(a)所示那样，外周部30o的表面粗糙度Ra比内周部30i大。在制造这样的冷却平板30时，例如，可以准备上表面30a整面的表面粗糙度Ra为1.6μm以下的冷却平板，对于外周部30o实施研磨、蚀刻等粗糙化处理以使外周部30o的表面粗糙度Ra大于1.6μm。
在工序(a)中准备的粘接片40s为以有机硅树脂、丙烯酸系树脂、聚酰亚胺树脂、环氧树脂等所代表的具有绝缘性的树脂制的片。粘接片40s是直径与陶瓷平板20的下表面20b和冷却平板30的上表面30a大致相同的圆形的片。粘接片40s可以为单层结构，也可以为多层结构。作为粘接片40s的具体例，可举出在聚丙烯制的芯材的两面具备丙烯酸系树脂层的片、在聚酰亚胺制的芯材的两面具备有机硅树脂层的片、环氧树脂单独的片等。
工序(b)中，首先，以使粘接片40s介于陶瓷平板20的下表面20b与冷却平板30的上表面30a之间的方式配置陶瓷平板20、冷却平板30以及粘接片40s，制造层叠体10s(参照图6(b))。接着，一边将层叠体10s加热一边利用真空压制进行加压，使粘接片40s固化，将陶瓷平板20与冷却平板30利用粘接片层40牢固地粘接(参照图6(c))。加热温度没有特别限定，可根据粘接片40s的种类进行设定，例如为90～180℃左右。加压力没有特别限定，可根据粘接片40s的种类进行设定，例如为0.4～1.5MPa左右。在以90～110℃进行加热的情况下，可以以1.1～1.5MPa进行加压，在以160～180℃进行加热的情况下，可以以0.4～0.8MPa进行加压。在粘接片40s溢出至外周的情况下，可以除去溢出的粘接片40s。
接下来，对于静电卡盘加热器10的使用例进行说明。首先，在静电卡盘加热器10的晶片载置面20a上载置晶片W，在台阶面30c上载置未图示的聚焦环。然后，通过对静电电极28与晶片W之间施加电压，从而利用静电力使晶片W吸附于陶瓷平板20。在该状态下，对于晶片W实施等离子体CVD成膜、等离子体蚀刻等处理。此时，通过对于内周加热电极22、外周加热电极24施加电压以对晶片W进行加热，或通过在冷却平板30的冷却介质流路32中使水等冷却介质进行循环以对晶片W进行冷却，从而控制晶片W的温度。另外，内周加热电极22与外周加热电极24各自连接至不同的内周电源22p和外周电源24p，分别进行温度控制。晶片W的处理结束之后，使静电电极28与晶片W之间的电压为零以使静电力消失，通过未图示的运输装置将晶片W运输至其他场所。
以上说明的本实施方式的静电卡盘加热器10及其制法中，作为粘接面的下表面20b和上表面30a中，外周部20o、30o的表面粗糙度Ra比内周部20i、30i大。因此，在外周部的粘接片40s的伸展由于锚定效应而被抑制，能够使粘接片层40的厚度均匀。因此，能够使晶片W的面内温度均匀。
此外，静电卡盘加热器10中，在与内周部20i、30i对应的内周区域Z1中内置有内周加热电极22，在与外周部20o、30o对应的外周区域Z2中内置有外周加热电极24。因此，即使由于表面粗糙度Ra的不同而导致内周部与外周部的导热产生差异，也能够根据该差异对内周加热电极22与外周加热电极24分别进行温度控制，能够使晶片W的面内温度更均匀。
此外，静电卡盘加热器10中，在陶瓷平板20的下表面20b和冷却平板30的上表面30a的半径为135mm以上的情况下，如果接合面整面的表面粗糙度Ra没有差异，则外周部的粘接片40s与内周部相比特别易于变薄。因此，应用本发明的意义很大。
此外，静电卡盘加热器10中，作为粘接面的下表面20b和上表面30a中，外周部20o、30o的表面粗糙度Ra大于1.6μm的情况下，在外周部20o、30o的锚定效应大。因此，在外周部，粘接片40s的伸展更加得到抑制，能够使粘接片层40的厚度更均匀。此外，如果内周部20i、30i的表面粗糙度Ra为1.6μm以下，则在内周部20i、30i的锚定效应比较小。因此，在内周部，粘接片40s适度地伸展，能够使粘接片层40的厚度更均匀。另外，外周部20o、30o的表面粗糙度Ra的上限没有特别限定，例如可以设为3.2μm以下，也可以设为内周部20i、30i的表面粗糙度Ra的2倍以下。如果这样设计，则粘接片40s易于进入凹凸的深处，不易产生间隙。
另外，本发明并不受上述实施方式的任何限定，不言而喻，只要属于本发明的技术范围，就能够以各种方式来实施。
例如，上述实施方式中，可以是仅陶瓷平板20的下表面20b中，外周部20o的表面粗糙度Ra比内周部20i大，也可以是仅冷却平板30的上表面30a中，外周部30o的表面粗糙度Ra比内周部30i大。虽然仅在一面形成锚定效应，但由于在外周部的粘接片40s的伸展因锚定效应而被抑制，因此能够使粘接片层40的厚度均匀。
上述实施方式中，将陶瓷平板20分割为内周区域Z1和外周区域Z2这两个区域，并在各区域Z1、Z2各配置有加热电极22、24，但也可以将陶瓷平板20分割为3个以上，并在各个区域配置加热电极。此外，区域的形状没有特别限定，除了圆形、环状以外，也可以设为半圆形、扇形、圆弧状等。此外，也可以不将陶瓷平板20分割为区域，以遍布整个陶瓷平板20的方式配置加热电极。
上述实施方式中，在俯视观察时内周部20i与外周部20o的边界、内周部30i与外周部30o的边界和虚拟边界B一致，但也可以与虚拟边界B不一致。
上述实施方式中，陶瓷平板20中内置有加热电极22、24以及静电电极28，但只要内置有电极，则电极的种类不受限定。例如，可以内置有静电电极和加热电极的至少一者，也可以内置有RF电极。
上述实施方式中，冷却平板30具有上表面30a、以及位置比上表面30a低的台阶面30c，但如图7所示那样，也可以使冷却平板30为没有台阶面30c的圆柱状。在该情况下，包围粘接面的外周的圆环状的上表面可以设为与外周部30o相同的表面粗糙度Ra，也可以设为与内周部30i相同的表面粗糙度Ra，还可以设为与两者都不同。
本申请以2019年3月19日申请的日本专利申请第2019-51398号作为优先权主张的基础，通过引用将其全部内容包含于本说明书中。
产业上的可利用性
本发明能够用于半导体的制造装置等。

Claims (5)

1.一种晶片载置装置，具备：
圆盘状的陶瓷平板，其上表面具有晶片载置面，且内置有电极；
圆盘状的冷却平板，其配置于所述陶瓷平板的与所述晶片载置面相反侧的下表面；以及
树脂制的粘接片层，其将位于所述陶瓷平板的下表面的粘接面与位于所述冷却平板的上表面的粘接面进行粘接，
所述陶瓷平板的粘接面和所述冷却平板的粘接面中的至少一者，外周部的表面粗糙度Ra比内周部大。
2.根据权利要求1所述的晶片载置装置，所述电极为加热电极，分别内置于所述陶瓷平板中与所述内周部对应的内周区域和所述陶瓷平板中与所述外周部对应的外周区域。
3.根据权利要求1或2所述的晶片载置装置，所述陶瓷平板的粘接面和所述冷却平板的粘接面的半径为135mm以上。
4.根据权利要求1～3中任一项所述的晶片载置装置，所述陶瓷平板的粘接面和所述冷却平板的粘接面中的至少一者，所述外周部的表面粗糙度Ra大于1.6μm。
5.一种晶片载置装置的制法，其包括下述工序：
(a)工序，准备内置有电极的圆盘状的陶瓷平板、圆盘状的冷却平板以及粘接片；
(b)工序，使用所述粘接片将所述陶瓷平板与所述冷却平板粘接，
在所述工序(a)中准备的所述陶瓷平板和所述冷却平板中的至少一者具有外周部的表面粗糙度Ra比内周部大的粘接面，
所述工序(b)中，利用外周部的表面粗糙度Ra比内周部大的所述粘接面进行粘接。
CN202010181643.6A 2019-03-19 2020-03-16 晶片载置装置及其制法 Active CN111725127B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-051398 2019-03-19
JP2019051398 2019-03-19

Publications (2)

Publication Number Publication Date
CN111725127A true CN111725127A (zh) 2020-09-29
CN111725127B CN111725127B (zh) 2023-06-27

Family

ID=72513668

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010181643.6A Active CN111725127B (zh) 2019-03-19 2020-03-16 晶片载置装置及其制法

Country Status (5)

Country Link
US (1) US11430685B2 (zh)
JP (1) JP6839314B2 (zh)
KR (1) KR102382728B1 (zh)
CN (1) CN111725127B (zh)
TW (1) TWI741530B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115142045A (zh) * 2021-03-29 2022-10-04 鑫天虹(厦门)科技有限公司 可准确调整温度的承载盘及薄膜沉积装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7376322B2 (ja) 2019-11-06 2023-11-08 株式会社ディスコ 樹脂シート固定装置
JP7335136B2 (ja) * 2019-11-06 2023-08-29 株式会社ディスコ 樹脂保護部材形成装置
US11587817B2 (en) 2020-10-21 2023-02-21 Applied Materials, Inc. High temperature bipolar electrostatic chuck
TWI768786B (zh) * 2021-03-24 2022-06-21 天虹科技股份有限公司 可準確調整溫度的承載盤及應用該承載盤的薄膜沉積裝置

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
JP2001094121A (ja) * 1999-09-24 2001-04-06 Matsushita Electric Works Ltd 転写ピン及びそれを用いた接着剤の転写方法
JP2001096454A (ja) * 1999-09-29 2001-04-10 Ibiden Co Ltd ウェハ研磨装置用テーブル、セラミックス構造体
US20020176219A1 (en) * 2001-02-27 2002-11-28 Katsushi Sakaue Electrostatic chuck
JP2005072043A (ja) * 2003-08-26 2005-03-17 Shin Etsu Handotai Co Ltd 貼り合わせウエーハの製造方法およびｓｏｉウエーハ
US20050068736A1 (en) * 2003-09-26 2005-03-31 Tokyo Electron Limited Method and apparatus for efficient temperature control using a contact volume
CN101010791A (zh) * 2004-06-28 2007-08-01 京瓷株式会社 静电卡盘
JP2008187020A (ja) * 2007-01-30 2008-08-14 Shin Etsu Handotai Co Ltd 気相成長用サセプタ及び気相成長装置並びに気相成長方法
CN101682937A (zh) * 2006-09-25 2010-03-24 东京毅力科创株式会社 用于衬底处理系统的具有非均匀绝缘层的温度受控衬底夹持器
JP2014067834A (ja) * 2012-09-25 2014-04-17 Taiheiyo Cement Corp 静電チャックおよびその製造方法
US20140203526A1 (en) * 2013-01-18 2014-07-24 Applied Materials, Inc. Temperature management of aluminium nitride electrostatic chuck
JP2015109139A (ja) * 2013-12-03 2015-06-11 日本碍子株式会社 セラミックヒータ及びその製法
CN105580129A (zh) * 2014-09-04 2016-05-11 日本碍子株式会社 晶片保持台及其制法
CN106548969A (zh) * 2015-09-22 2017-03-29 北京北方微电子基地设备工艺研究中心有限责任公司 夹持装置及半导体加工设备
CN107768300A (zh) * 2016-08-16 2018-03-06 北京北方华创微电子装备有限公司 卡盘、反应腔室及半导体加工设备
CN108028220A (zh) * 2016-08-10 2018-05-11 日本碍子株式会社 陶瓷加热器
CN109390243A (zh) * 2017-08-03 2019-02-26 赛米控电子股份有限公司 具有粘附层的功率电子组件，以及用于制造所述组件的方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3330973B2 (ja) * 1992-06-02 2002-10-07 日本特殊陶業株式会社 セラミックスと金属との接合体
JP2000323558A (ja) * 1999-05-07 2000-11-24 Nikon Corp 静電吸着装置
JP3859937B2 (ja) * 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
JP2003224180A (ja) 2002-01-28 2003-08-08 Kyocera Corp ウエハ支持部材
ATE471790T1 (de) * 2002-04-18 2010-07-15 Saint Gobain Ceramics Läppträger zur benutzung bei der herstellung von gleitkörpern
US7618515B2 (en) * 2004-11-15 2009-11-17 Tokyo Electron Limited Focus ring, plasma etching apparatus and plasma etching method
JP2007043042A (ja) 2005-07-07 2007-02-15 Sumitomo Electric Ind Ltd ウェハ保持体およびその製造方法、ならびにそれを搭載したウェハプローバ及び半導体加熱装置
WO2008045108A2 (en) * 2005-12-15 2008-04-17 Gulfstream Aerospace Corporation Isentropic compression inlet for supersonic aircraft
JP2008016727A (ja) 2006-07-07 2008-01-24 Tokyo Electron Ltd 伝熱構造体及び基板処理装置
US8524005B2 (en) 2006-07-07 2013-09-03 Tokyo Electron Limited Heat-transfer structure and substrate processing apparatus
US20080145038A1 (en) * 2006-12-15 2008-06-19 Applied Materials, Inc. Method and apparatus for heating a substrate
US20080257263A1 (en) * 2007-04-23 2008-10-23 Applied Materials, Inc. Cooling shield for substrate processing chamber
JP4948337B2 (ja) 2007-09-13 2012-06-06 株式会社巴川製紙所 静電チャック装置用接着シート、および静電チャック装置
JP5049891B2 (ja) * 2008-06-13 2012-10-17 新光電気工業株式会社 基板温調固定装置
JP5789512B2 (ja) * 2009-07-31 2015-10-07 電気化学工業株式会社 Ｌｅｄ搭載用ウエハとその製造方法、及びそのウエハを用いたｌｅｄ搭載構造体
JP2011049425A (ja) * 2009-08-28 2011-03-10 Ngk Spark Plug Co Ltd 半導体製造装置用部品
US8371567B2 (en) * 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
JP2014052340A (ja) 2012-09-10 2014-03-20 Kobe Steel Ltd 粗さ測定装置
JP5891332B2 (ja) 2015-09-02 2016-03-22 新光電気工業株式会社 静電チャック

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
JP2001094121A (ja) * 1999-09-24 2001-04-06 Matsushita Electric Works Ltd 転写ピン及びそれを用いた接着剤の転写方法
JP2001096454A (ja) * 1999-09-29 2001-04-10 Ibiden Co Ltd ウェハ研磨装置用テーブル、セラミックス構造体
US20020176219A1 (en) * 2001-02-27 2002-11-28 Katsushi Sakaue Electrostatic chuck
JP2005072043A (ja) * 2003-08-26 2005-03-17 Shin Etsu Handotai Co Ltd 貼り合わせウエーハの製造方法およびｓｏｉウエーハ
US20050068736A1 (en) * 2003-09-26 2005-03-31 Tokyo Electron Limited Method and apparatus for efficient temperature control using a contact volume
CN101010791A (zh) * 2004-06-28 2007-08-01 京瓷株式会社 静电卡盘
CN101682937A (zh) * 2006-09-25 2010-03-24 东京毅力科创株式会社 用于衬底处理系统的具有非均匀绝缘层的温度受控衬底夹持器
JP2008187020A (ja) * 2007-01-30 2008-08-14 Shin Etsu Handotai Co Ltd 気相成長用サセプタ及び気相成長装置並びに気相成長方法
JP2014067834A (ja) * 2012-09-25 2014-04-17 Taiheiyo Cement Corp 静電チャックおよびその製造方法
US20140203526A1 (en) * 2013-01-18 2014-07-24 Applied Materials, Inc. Temperature management of aluminium nitride electrostatic chuck
JP2015109139A (ja) * 2013-12-03 2015-06-11 日本碍子株式会社 セラミックヒータ及びその製法
CN105580129A (zh) * 2014-09-04 2016-05-11 日本碍子株式会社 晶片保持台及其制法
CN106548969A (zh) * 2015-09-22 2017-03-29 北京北方微电子基地设备工艺研究中心有限责任公司 夹持装置及半导体加工设备
CN108028220A (zh) * 2016-08-10 2018-05-11 日本碍子株式会社 陶瓷加热器
CN107768300A (zh) * 2016-08-16 2018-03-06 北京北方华创微电子装备有限公司 卡盘、反应腔室及半导体加工设备
CN109390243A (zh) * 2017-08-03 2019-02-26 赛米控电子股份有限公司 具有粘附层的功率电子组件，以及用于制造所述组件的方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115142045A (zh) * 2021-03-29 2022-10-04 鑫天虹(厦门)科技有限公司 可准确调整温度的承载盘及薄膜沉积装置
CN115142045B (zh) * 2021-03-29 2023-12-19 鑫天虹(厦门)科技有限公司 可准确调整温度的承载盘及薄膜沉积装置

Also Published As

Publication number Publication date
CN111725127B (zh) 2023-06-27
JP6839314B2 (ja) 2021-03-03
TWI741530B (zh) 2021-10-01
KR20200111632A (ko) 2020-09-29
TW202040729A (zh) 2020-11-01
US11430685B2 (en) 2022-08-30
KR102382728B1 (ko) 2022-04-06
US20200303230A1 (en) 2020-09-24
JP2020161813A (ja) 2020-10-01

Similar Documents

Publication Publication Date Title
CN111725127B (zh) 晶片载置装置及其制法
TWI605539B (zh) Electrostatic chuck
JP6708518B2 (ja) 基板固定装置及びその製造方法
KR101929278B1 (ko) 정전 척
US20130148253A1 (en) Substrate temperature adjusting-fixing device and manufacturing method thereof
TW201812984A (zh) 靜電吸盤
US20200303229A1 (en) Electrostatic chuck device and method of manufacturing electrostatic chuck device
US20230139249A1 (en) Thermal diffuser for a semiconductor wafer holder
TW201604920A (zh) 電漿處理裝置
TWI836092B (zh) 基板固定裝置及其製造方法
CN104112669A (zh) 半导体装置的生产方法
JP2003258065A (ja) ウエハ載置ステージ
JP7329917B2 (ja) 基板固定装置
JP6449802B2 (ja) 半導体製造用部品
WO2024079880A1 (ja) ウエハ載置台
JP6580974B2 (ja) 静電チャックの製造方法
JP2021044305A (ja) 保持装置および保持装置の製造方法
JP2019212842A (ja) ウェーハ用スペーサ
JP2024000905A (ja) 基板固定装置及び基板固定装置の製造方法
JP2014093420A (ja) ウェハを支持ディスクに接着する治具、および、それを用いた半導体装置の製造方法
JP2023180522A (ja) 基板固定装置及び基板固定装置の製造方法
KR20220092383A (ko) 정전 척, 그 제조 방법, 및 기판 고정 장치
JP2023079422A (ja) ウエハ載置台
CN115132637A (zh) 静电吸盘和基板固定装置
JP2019012847A (ja) 半導体製造用部品

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant