TWI741530B - 晶圓載置裝置及其製法 - Google Patents

晶圓載置裝置及其製法 Download PDF

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TWI741530B
TWI741530B TW109108739A TW109108739A TWI741530B TW I741530 B TWI741530 B TW I741530B TW 109108739 A TW109108739 A TW 109108739A TW 109108739 A TW109108739 A TW 109108739A TW I741530 B TWI741530 B TW I741530B
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園田敬典
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Abstract

本發明的晶圓夾具加熱器10，其具備：陶瓷盤20，其係在上面具有晶圓載置面20a，內建電極22、24、28；冷卻盤30，其配置在陶瓷盤20的晶圓載置面20a的相反側的下面20b；及樹脂製的接著片層40，其係將陶瓷盤20與冷卻盤30接著。陶瓷盤20的接著面的下面20b及冷卻盤30的接著面的上面30a，外周部20o、30o的表面粗糙度Ra較內周部20i、30i粗。

Description

晶圓載置裝置及其製法
本發明係關於晶圓載置裝置及其製法。
作為晶圓載置裝置，已知將上面具有晶圓載置面的圓盤狀陶瓷盤，及配置在陶瓷盤的晶圓載置面的相反側的下面的圓盤狀的冷卻盤，以樹脂製的接著片接著(例如，專利文獻1)。專利文獻1的晶圓載置裝置，係以接著片黏合陶瓷盤與冷卻盤作成層積體，邊將層積體加熱做真空壓製而製造。 ［先前技術文獻］ ［專利文獻］
［專利文獻1］日本特開2009-71023號公報
但是，專利文獻1的晶圓載置裝置，接著片層的厚度，有時在外周部變得較薄，而接著片層的厚度不均勻。接著片層的厚度不均勻，則在經由接著片層的陶瓷盤與冷卻盤之間發生熱傳導差，而會使晶圓的面內溫度變得不均勻。
本發明係為解決如此的課題而完成，使接著片層的厚度均勻，而使晶圓的面內溫度均勻為主要目標。
本發明的晶圓載置裝置，其具備： 圓盤狀的陶瓷盤，其係在上面具有晶圓載置面，內建電極； 圓盤狀的冷卻盤，其係配置在上述陶瓷盤的上述晶圓載置面的相反側的下面；及 樹脂製的接著片層，其係用於接著上述陶瓷盤的下面的接著面與上述冷卻盤的上面的接著面， 上述陶瓷盤的接著面及上述冷卻盤的接著面之中的至少一方，外周部的表面粗糙度Ra較內周部粗。
在該晶圓載置裝置，在陶瓷盤下面的接著面及冷卻盤上面的接著面之中的至少一方，外周部的表面粗糙度(算術平均粗)Ra較內周部粗。在接著面的雙方內周部與外周部的表面粗糙度Ra相同時，在壓製時外周部的接著片層容易變得較內周部薄。此可認為係由於以陶瓷盤與冷卻盤相夾的接著片，只有外周不受拘束，越外周部越容易伸展。因此，在接著片容易伸展的外周部，使接著面的表面粗糙度Ra變粗，則在外周部的接著片的伸展因錨定效果而被抑制，可使晶圓載置裝製的接著片層的厚度均勻。因此，可使晶圓的面內溫度均勻。在接著面的雙方，只要外周部的表面粗糙度Ra較內周部粗，則可使接著片層的厚度更均勻而佳。再者，使內周部的接著面的表面粗糙度Ra變粗與外周部的表面粗糙度Ra相同時，由於不只是外周部而內周部的接著片的伸展亦被抑制，故外周部的接著片的還是會變得較內周部薄。因此，需要使外周部的表面粗糙度Ra較內周部粗。表面粗糙度Ra較粗的部分，即外周部，可為接著面的直徑85%的更外周的部分，亦可為接著面的直徑90%的更外周的部分，亦可為接著面的直徑95%的更外周的部分。
再者，在本說明書，「上」「下」，並非表示絕對的位置關係，是表示相對的位置關係。因此，根據晶圓承載裝置的方向「上」「下」有時會變成「上」「下」，「左邊」「右邊」，或成為「前面」「後面」。
在本發明的晶圓載置裝置，上述電極為加熱器電極，亦可個別內建在對應上述陶瓷盤之中的上述內周部的內周區域，及對應上述陶瓷盤之中的上述外周部的外周區域。由於使接著面的外周部的表面粗糙度Ra變粗，則可如上所述使接著片層的厚度均勻，故可將因接著片層的厚度不同所產生的熱傳導的差異變小。但是，由於接著面的表面粗糙度Ra在內周部與外周部不同，經由接著片層的陶瓷盤與冷卻盤之間的熱傳導，雖然程度小，有時會在內周部與外周部發生差異。在此，將內周區域的加熱器電極與外周區域的加熱器電極個別內建。因此，可按照內周部與外周部的熱傳導差異，個別溫度控制內周區域的加熱器電極與外周區域的加熱器電極，而可使晶圓的面內溫度更均勻。
在本發明的晶圓載置裝置，上述陶瓷盤的接著面及上述冷卻盤的接著面，可作成半徑135mm以上。陶瓷盤的接著面及冷卻盤的接著面的半徑在135mm以上時，接合面全面的表面粗糙度Ra沒有差異，則外周部的接著片特別容易變得較內周部薄。因此，適用本發明的意義很高。此時，內周部與外周部的邊界，可為半徑135mm以上的圓。
在本發明的晶圓載置裝置，上述陶瓷盤的接著面及上述冷卻盤的接著面之中的至少一方，可使上述外周部的表面粗糙度Ra較1.6μm粗。如此，則由於外周部的錨定效果大，而可更加抑制外周部的接著片的伸展，可使接著片層的厚度更均勻。內周部的表面粗糙度Ra，可例如為1.6μm以下。接著片在內周部適度伸展，可使接著片層的厚度更均勻。
本發明的晶圓載置裝置的製法，包含： (a)準備內建電極的圓盤狀陶瓷盤、圓盤狀的冷卻盤、及接著片的步驟； (b)將上述陶瓷盤與上述冷卻盤使用上述接著片接著的步驟， 在上述步驟(a)準備的上述陶瓷盤及上述冷卻盤之中的至少一方，具有外周部的表面粗糙度Ra較內周部粗的接著面， 在上述步驟(b)，將外周部的表面粗糙度Ra較內周部粗的上述接著面接著。
根據該晶圓載置裝置的製法，由於可藉由錨定效果抑制外周部的接著片伸展，故可使晶圓載置裝置的接著片層的厚度均勻。因此，可使晶圓的面內溫度均勻。在接著面的雙方，由於只要外周部的表面粗糙度Ra較內周部越粗，則由於可使接著片層的厚度更均勻而更為佳。
將本發明的較佳的實施形態，參照圖面說明如下。圖1係本發明的晶圓載置裝置的一實施形態的靜電夾具加熱器10的立體圖，圖2係圖1的A-A剖面圖，圖3係將加熱器電極22、24以平面視時的說明圖，圖4係陶瓷盤20的底視圖，圖5係冷卻盤30的俯視圖。圖6係表示靜電夾具加熱器10的製法的說明圖。
靜電夾具加熱器10，具備：陶瓷盤20，其係在上面具有晶圓載置面20a；及冷卻盤30，其配置在陶瓷盤20的晶圓載置面20a的相反側的下面20b。作為陶瓷盤20的接著面的下面20b與作為冷卻盤30的接著面的上面30a，以樹脂製的接著片層40接著。
陶瓷盤20係由氮化鋁或氧化鋁等所代表的陶瓷材料所組成的圓盤狀的盤。陶瓷盤20的直徑，並無特別限定，例如為300mm程度。在陶瓷盤20，如圖2所示，內建內周加熱器電極22、外周加熱器電極24及靜電電極28。內周加熱器電極22及外周加熱器電極24，例如以鉬、鎢或碳化鎢為主要成分的線圈或印刷圖案製作。內周加熱器電極22，具有與陶瓷盤20相同的中心的直徑較陶瓷盤20小的圓形內周區域Z1(圖3的假想邊界B的內側)，以遍及全體地以一筆畫的要領從一端22a配線到另一端22b。內周區域Z1的直徑，並無特別限定，較佳的是陶瓷盤20的直徑的85%以上且95%以下，例如為270mm程度。內周加熱器電極22的一端22a與另一端22b，連接內周電源22p。外周加熱器電極24，以遍及包圍內周區域Z1的環狀外周區域Z2(圖3的假想邊界B的外側)的全體地以一筆畫的要領從一端24a配線到另一端24b。外周加熱器電極24的一端24a與另一端24b，連接外周電源24p。靜電電極28，例如以鉬、鎢或碳化鎢為主要成分的線圈或盤製作，與陶瓷盤20的晶圓載置面20a平行設置。靜電電極28連接未示於圖的靜電電極電源。
陶瓷盤20的下面20b，係如圖4所示，外周部20o的表面粗糙度Ra較內周部20i粗。外周部20o的表面粗糙度Ra，並無特別限定，例如較1.6μm粗。在圖4，以網眼表示表面粗糙度Ra較1.6μm更粗的部分，其以外的部分以白色表示。內周部20i與外周部20o的邊界，以平面視時，與圖3的假想邊界B一致。
冷卻盤30，係由鋁或鋁合金等所代表的金屬組成的直徑較陶瓷盤20大的圓盤狀的盤。冷卻盤30，係如圖2所示，具有：直徑與陶瓷盤20相同的圓形的上面30a；及較上面30a低位而有包圍上面30a的外周的圓環狀段差面30c。在上面30a接著陶瓷盤20，在段差面30c載置未示於圖的聚焦環(亦稱為保護環)。在冷卻盤30的內部，設置冷媒流路32。冷媒流路32，以遍及配置陶瓷盤20的整個區域，以一筆畫的要領從入口設置到出口。冷媒流路32的入口及出口，連接未示於圖的外部冷卻裝置，從出口排放的冷媒，以外部冷卻裝置調整溫度之後再放回入口供給冷媒流路32內。
冷卻盤30的上面30a，係如圖5所示，外周部30o的表面粗糙度Ra較內周部30i粗。外周部30o的表面粗糙度Ra，並無特別限定，例如較1.6μm粗。在圖5，以網眼表示表面粗糙度Ra較1.6μm粗的部分，其以外的部分以白色表示。內周部30i與外周部30o的邊界，以平面視時，與圖3的假想邊界B一致。
接著片層40，係以矽氧樹脂或丙烯酸樹脂、聚醯亞胺樹脂、環氧樹脂等所代表的絕緣性的樹脂製的接著片所形成的層，與陶瓷盤20的下面20b及冷卻盤30的上面30a相同直徑的圓形的層。接著片層40，可為單層結構，亦可為多層結構。作為接著片層40的具體例，可舉出在聚丙烯製的芯材的兩面具有丙烯酸樹脂層的片，或在聚醯亞胺製的芯材的兩面具有矽氧樹脂層的片、環氧樹脂單獨的片等。
接著，說明關於靜電夾具加熱器10的製法。該製法，包含：準備陶瓷盤20、冷卻盤30及接著片40s的步驟(a)；將陶瓷盤20與冷卻盤30使用接著片40s接著的步驟(b)。
在步驟(a)準備的陶瓷盤20，與上述陶瓷盤20相同，內建內周加熱器電極22、外周加熱器電極24及靜電電極28。陶瓷盤20的下面20b，係如圖6(a)所示，外周部20o的表面粗糙度Ra較內周部20i粗。製造如此的陶瓷盤20時，可例如準備下面20b全體的表面粗糙度Ra為1.6μm以下的陶瓷盤，對外周部20o施以研磨或蝕刻等粗化處理，使外周部20o的表面粗糙度Ra較1.6μm粗。
在步驟(a)準備的冷卻盤30，與上述冷卻盤30相同，在內部設製冷媒流路32。冷卻盤30的上面30a，係如圖6(a)所示，外周部30o的表面粗糙度Ra較內周部30i粗。製造如此的冷卻盤30時，可例如準備上面30a全體的表面粗糙度Ra為1.6μm以下的冷卻盤，對外周部30o施以研磨或蝕刻等粗化處理，使外周部30o的表面粗糙度Ra較1.6μm粗。
在步驟(a)準備的接著片40s，係以矽氧樹脂或丙烯酸樹脂、聚醯亞胺樹脂、環氧樹脂等所代表的具有絕緣性的樹脂製的片。接著片40s，可為直徑與陶瓷盤20的下面20b及冷卻盤30的上面30a大致相同的圓形。接著片40s，可為單層結構，亦可為多層結構。作為接著片40s的具體例，可舉出在聚丙烯製的芯材的兩面具有丙烯酸樹脂層的片，或在聚醯亞胺製的芯材的兩面具有矽氧樹脂層的片、環氧樹脂單獨的片等。
在步驟(b)，首先，將陶瓷盤20、冷卻盤30及接著片40s配置成接著片40s於陶瓷盤20的下面20b與冷卻盤30的上面30a之間，而製造層積體10s(參照圖6(b))。接著，邊將層積體10s加熱進行以真空壓製機的加壓，使接著片40s硬化，將陶瓷盤20與冷卻盤30以接著片層40牢固地接著(參照圖6(c))。加熱溫度，並無特別限定，只要按照接著片40s的種類設定即可，例如為90~180℃左右。加壓力，並無特別限定，只要按照接著片40s的種類設定即可，例如為0.4~1.5MPa左右。以90~110℃加熱時，可以1.1~1.5MPa加壓，亦可以160~180℃加熱時，以0.4~0.8MPa加壓。接著片40s溢出外周時，亦可去除溢出的接著片40s。
接著，說明關於靜電夾具加熱器10的使用例。首先，在靜電夾具加熱器10的晶圓載置面20a載置晶圓W，載置在段差面30c的未示於圖的聚焦環。然後，藉由在靜電電極28與晶圓W之間施加電壓，藉由靜電力將晶圓W吸附在陶瓷盤20。以此狀態，對晶圓W進行電漿CVD成膜或電漿蝕刻法等的處理。此時，在內周加熱器電極22與外周加熱器電極24施加電壓，將晶圓W加熱，藉由在冷卻盤30的冷媒流路32，以水等的冷媒循環，將晶圓W冷卻，而控制晶圓W的溫度。再者，內周加熱器電極22與外周加熱器電極24，連接各自不同的內周電源22p及外周電源24p，個別控制溫度。結束晶圓W的處理，則使靜電電極28與晶圓W之間的電壓為零使靜電力消失，藉由未示於圖的搬運裝置將晶圓W輸送到其他地方。
在以上所說明的本實施形態的靜電夾具加熱器10及其製法，在接著面的下面20b及上面30a，外周部20o、30o的表面粗糙度Ra較內周部20i、30i粗。因此，接著片40s在外周部的伸展因錨定效果而被抑制，可使接著片層40的厚度均勻。因此，可使晶圓W的面內溫度均勻。
此外，靜電夾具加熱器10，在對應內周部20i、30i的內周區域Z1內建內周加熱器電極22，在對應外周部20o、30o的外周區域Z2內建外周加熱器電極24。因此，即使因表面粗糙度Ra的差異不同而內周部與外周部的熱傳導發生差異，亦可按照其差異，將內周加熱器電極22與外周加熱器電極24個別控制溫度，可使晶圓W的面內溫度更均勻。
此外，在靜電夾具加熱器10，陶瓷盤20的下面20b及冷卻盤30的上面30a的半徑為135mm以上時，接合面全面的表面粗糙度Ra沒有差異，則接著片40s在外周部特別容易變得較內周部薄。因此，適用本發明的意義很高。
此外，在靜電夾具加熱器10，在接著面的下面20b及上面30a，外周部20o、30o的表面粗糙度Ra較1.6μm粗時，在外周部20o、30o的錨定效果較大。因此，接著片40s在外周部的伸展更被抑制，可使接著片層40的厚度更均勻。此外，內周部20i、30i的表面粗糙度Ra為1.6μm以下，則在內周部20i、30i的錨定效果較小。因此，接著片40s在內周部可適當地伸展，可使接著片層40的厚度更均勻。再者，外周部20o、30o的表面粗糙度Ra的上限，並無特別限定，可例如為3.2μm以下，亦可為內周部20i、30i的表面粗糙度Ra的2倍以下。如此，則接著片40s容易進入到凹凸的深處，而不容易發生間隙。
再者，本發明並無任何限定於上述實施形態，只要屬於本發明的技術上範圍，可以各種態樣實施，不言而喻。
例如，在上述實施形態，亦可只有陶瓷盤20的下面20b，外周部20o的表面粗糙度Ra較內周部20i粗，亦可只有冷卻盤30的上面30a，外周部30o的表面粗糙度Ra較內周部30i粗。雖然錨定效果變得只有一面，但由於接著片40s在外周部的的伸展因錨定效果被抑制，故可使接著片層40的厚度均勻。
在上述實施形態，將陶瓷盤20分割成內周區域Z1及外周區域Z2兩個區域，在各區域Z1、Z2各配置加熱器電極22、24，惟亦可將陶瓷盤20分割成三個以上，在每個區域配置加熱器電極。此外，區域的形狀，並無特別限定，在圓形或環狀之外，亦可作成半圓形、扇形、圓弧狀。此外，亦可不將陶瓷盤20分割成區域，以可遍及到陶瓷盤20全體地配置加熱器電極。
在上述實施形態，內周部20i與外周部20o的邊界，及內周部30i與外周部30o的邊界，以平面視時，與假想邊界B一致，惟亦可不與假想邊界B一致。
在上述實施形態，係作成在陶瓷盤20，內建加熱器電極22、24及靜電電極28，惟只要內建電極，電極的種類並無限定。例如，可內建靜電電極及加熱器電極的至少一方，亦可內建RF電極。
在上述實施形態，冷卻盤30，係作成具有上面30a，及較上面30a低位的段差面30c，惟亦可如圖7所示，將冷卻盤30作成沒有段差面30c的圓柱狀。此時，包圍接著面外周的圓環狀上面，可作成與外周部30o相同的表面粗糙度Ra，亦可作成與內周部30i相同的表面粗糙度Ra，亦可與任一方不同。
本發明基於西元2019年3月19日申請的日本專利申請2019-51398號案主張優先權，且其全部內容以參考資料包含於本說明書中。 ［產業上的可利性］
本發明，可利用在半導體的製造裝置等。
10:靜電夾具加熱器 10s:層積體 20:陶瓷盤 20a:晶圓載置面 20b:下面 20i:內周部 20o:外周部 22:內周加熱器電極 22a:一端 22b:另一端 22p:內周電源 24:外周加熱器電極 24a:一端 24b:另一端 24p:外周電源 28:靜電電極 30:冷卻盤 30a:上面 30c:段差面 30i:內周部 30o:外周部 32:冷媒流路 40:接著片層 40s:接著片 B:假想邊界 Z1:內周區域 Z2:外周區域
［圖1］靜電夾具加熱器10的立體圖。 ［圖2］圖1的A-A剖面圖。 ［圖3］將加熱器電極22、24以平面視時的說明圖。 ［圖4］陶瓷盤20的底視圖。 ［圖5］冷卻盤30的俯視圖。 ［圖6］表示靜電夾具加熱器10的製法的說明圖。 ［圖7］靜電夾具加熱器10的其他例的對應圖2的剖面圖。
10:靜電夾具加熱器
20:陶瓷盤
20a:晶圓載置面
20b:下面
20i:內周部
20o:外周部
22:內周加熱器電極
24:外周加熱器電極
28:靜電電極
30:冷卻盤
30a:上面
30c:段差面
30i:內周部
30o:外周部
32:冷媒流路
40:接著片層
W:晶圓
Z1:內周區域
Z2:外周區域

Claims (5)

  1. 一種晶圓載置裝置，其具備：圓盤狀的陶瓷盤，其係在上面具有晶圓載置面，內建電極；圓盤狀的冷卻盤，其係配置在上述陶瓷盤的上述晶圓載置面的相反側的下面；及樹脂製的接著片層，其係用於接著上述陶瓷盤的下面的接著面與上述冷卻盤的上面的接著面，上述陶瓷盤的接著面及上述冷卻盤的接著面之中的至少一方，外周部的表面粗糙度Ra較內周部粗。
  2. 如請求項1之晶圓載置裝置，其中上述電極為加熱器電極，個別內建在對應上述陶瓷盤之中的上述內周部的內周區域，及對應上述陶瓷盤之中的上述外周部的外周區域。
  3. 如請求項1或2之晶圓載置裝置，其中上述陶瓷盤的接著面及上述冷卻盤的接著面為半徑135mm以上。
  4. 如請求項1或2之晶圓載置裝置，其中上述陶瓷盤的接著面及上述冷卻盤的接著面之中的至少一方，上述外周部的表面粗糙度Ra較1.6μm粗。
  5. 一種晶圓載置裝置的製法，包含：(a)準備內建電極的圓盤狀陶瓷盤、圓盤狀的冷卻盤、及接著片的步驟；(b)將上述陶瓷盤與上述冷卻盤使用上述接著片接著的步驟，在上述步驟(a)準備的上述陶瓷盤及上述冷卻盤之中的至少一方，具有外周部的表面粗糙度Ra較內周部粗的接著面，在上述步驟(b)，將外周部的表面粗糙度Ra較內周部粗的上述接著面接著。
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