CN111357087B - 具有增强互连件的芯片封装组件及其制造方法 - Google Patents

具有增强互连件的芯片封装组件及其制造方法 Download PDF

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CN111357087B
CN111357087B CN201880069954.4A CN201880069954A CN111357087B CN 111357087 B CN111357087 B CN 111357087B CN 201880069954 A CN201880069954 A CN 201880069954A CN 111357087 B CN111357087 B CN 111357087B
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substrate
solder
chip package
post
circuitry
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CN111357087A (zh
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J·S·甘地
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Xilinx Inc
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Xilinx Inc
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Abstract

本文描述了一种集成电路互连件132，适合于形成集成电路芯片封装110。在一个示例中，提供集成电路互连件132，其包括包含第一电路系统212的第一基板112、第一接触焊盘214、第一柱230、第一柱保护层280、包含第二电路系统202的第二基板114以及设置在第一柱230上并且将第一基板112电且机械地耦合至第二基板114的焊料球216。第一接触焊盘214设置在第一基板112上并且耦合至第一电路系统212。第一柱230电设置于第一接触焊盘214之上。第一柱保护层280对焊料疏水并且设置在第一柱230的侧表面262上。

Description

具有增强互连件的芯片封装组件及其制造方法
技术领域
本文描述的实现一般地涉及芯片封装，并且特别地，涉及用于半导体器件的焊料凸点结构及其制造方法。
背景技术
对更小、更轻、更紧凑电子设备的日益增长的需求，导致了随之而来的对具有更小轮廓和安装面积或“覆盖区(footprints)”的半导体封装的需求。对此需求的一种回应是开发了将半导体芯片或“裸片”附接和连接至基板(例如，PCB或引线框架)的“倒装芯片”方法。倒装芯片安装涉及在裸片的有源表面上形成凸起的触点(例如，焊料球)，然后将该裸片反向或翻转使其倒置，并且使凸起的触点回流(即，将凸起的触点加热至熔点)以形成将凸起的触点熔合到基板上对应焊盘的焊点。
在倒装芯片安装和连接方法中，热机械可靠性引起了电子行业越来越多的关注。值得注意的是，集成电路互连件(例如，焊点)的可靠性是成功应用这种安装和连接方法的最关键的问题之一。然而，使用已知方法形成的焊点易于缩颈，这可能导致焊点开裂。由于热膨胀的差异(其由于热应力循环而在高应力点处产生了不期望的开裂的高风险)，在如此小的间距下，在中介层和裸片之间形成牢固的、被利用于半导体封装中的焊料连接是特别具有挑战性的。
因此，需要改进的集成电路互连件以及形成用于集成电路的改进焊点的方法。
发明内容
本文描述了适合于形成集成电路芯片封装的集成电路互连件，以及形成该集成电路互连件的方法。在一个示例中，提供集成电路互连件，其包括包含第一电路系统的第一基板、第一接触焊盘、第一柱、第一柱保护层、包含第二电路系统的第二基板以及设置在第一柱上并且将第一基板电气且机械地耦合至第二基板的焊料球。第一接触焊盘设置在第一基板上并且耦合至第一电路系统。第一柱电设置于第一接触焊盘之上。第一柱保护层对焊料疏水(hydrophobic)并且设置在第一柱的侧表面上。
在另一示例中，集成电路互连件包括IC裸片、中介层、从中介层延伸的导电柱，以及布置在柱上并且将IC裸片电气且机械地耦合至中介层的焊料球。柱保护层设置且覆盖在导电柱的侧表面上。柱保护层由对焊料疏水的材料制成。
在另一示例中，提供一种用于形成集成电路封装的互连件的方法。方法包括在耦合于在第一基板中形成的第一电路系统的柱上设置焊料球，将焊料球和柱暴露于含硫环境中以在柱的侧表面上形成对焊料疏水的柱保护层，将第一基板附接到第二基板，并且使焊料球回流以将第一基板机械且电气地连接至第二基板。
附图说明
可以参考实施例对以上简要概述的本发明进行更具体的描述，以便可以详细地理解本发明的上述特征，其中一些实施例被图示在附图中。然而，应当注意，附图仅图示了本发明的典型示例，并且由于本发明可以认可其他等同有效的实施例，因此附图不应被认为是对本发明范围的限制。
图1是具有集成芯片封装的电子设备的正面示意图，该集成芯片封装包括通过焊料互连件与芯片封装的中介层耦合的至少一个集成电路裸片。
图2是将中介层耦合至图1的芯片封装裸片的焊料互连件的一个实施例的局部截面图。
图3A至图3E是在不同制造阶段期间的芯片封装的顺序图。
图4是用于形成芯片封装的方法流程图，诸如图1中描绘的芯片封装或结合IC互连件的其他芯片封装。
为了便于理解，在可能的地方使用相同的附图标记来表示图中共用的相同元件。可以想到，一个实施例的元件可以被有益地并入其他实施例中。
具体实现
所公开实施例的技术一般地提供一种芯片封装以及形成芯片封装的方法，该芯片封装具有在芯片封装的基板之间形成的改进的焊料互连件。芯片封装包括至少一个集成电路(IC)裸片。芯片封装的基板包括裸片、其上安装裸片的封装基板、以及可选地设置在封装基板和裸片之间的中介层。在以下的描述中，中介层和IC裸片之间的改进焊料互连件被图示。然而，改进的焊料互连件还可以用于将IC裸片耦合至封装基板的焊料连接、用于将中介层耦合至封装基板的焊料连接或用于其他的焊料连接上。特别地，由于在导电柱上形成的阻挡焊料芯吸到柱上的焊料芯吸阻挡涂层(例如，柱保护层)，本文所述的焊料互连件不易缩颈和开裂。较少的芯吸导致在焊料球中保留了更多的焊料量，从而使电气和机械的连接更加牢固和抗裂。附加地，形成柱保护层的工艺可以以有利地在焊料球上形成焊料球保护层的方式来执行。焊料球保护层保护焊料球使其免于氧化，并且在回流工艺中容易被去除。
柱保护层使新颖的IC互连件不易出现与减少焊料量相关的金属间(IMC)脆性。因此，本发明的IC互连件在更宽泛的操作条件范围内提供了更稳健和更可靠的信号传输以及更好的设备性能，同时具有更少的费用和制造复杂度。
现在转到图1，示意性地图示了示例性电子设备100。电子设备100包括耦合至印刷电路板(PCB)136的集成电路芯片封装110。电子设备100可以是计算机、平板电脑、手机、智能电话、消费类电器、控制系统、自动柜员机、可编程的逻辑控制器、打印机、复印机、数码相机、电视、监视器、立体声、收音机、雷达或其他结合芯片封装110的设备。
芯片封装110包括至少一个集成电路(IC)裸片。在图1中，示出多个IC裸片114、116通过中介层112连接至封装基板122。芯片封装110还可以具有覆盖IC裸片114、116的包覆成型(未示出)。中介层112可以是如本领域中公知的基板通孔(TSV)或无基板中介层。中介层112包括用于将裸片114、116电气连接至封装基板122的电路系统的电路系统。中介层112的电路系统可以可选地包括有源或无源电路元件。
IC裸片114、116安装到中介层112的一个或多个表面。IC裸片114、116可以是可编程逻辑器件，诸如现场可编程门阵列(FPGA)、存储器器件、光学器件、处理器或其他IC逻辑结构。光学装置包括光电检测器、激光器、光源等。在图1所描绘的实施例中，IC裸片114、116通过多个焊料互连件118安装到中介层112的顶表面。焊料互连件118将每个IC裸片114、116的电路系统电气连接至中介层112的电路系统。下面参考图2进一步讨论焊料互连件118。
多个焊料互连件132还被利用于在中介层112的电路系统与封装基板122的电路系统之间形成电气且机械地连接。可以使用焊料球(也被称为“封装凸点”或“C4凸点”)，或可以如以下参考焊料互连件118所描述的那样，来形成焊料互连件132。封装基板122可以利用焊料连接、引线键合或其他适合的技术安装并连接至PCB 136。在图1所描绘的实施例中，使用多个焊料球134将封装基板122安装到PCB 136上。
中介层112的电路系统将焊料互连件118连接至选择性的焊料互连件132，并且因此在芯片封装110安装在电子设备110内之后，将每个IC裸片114、116的选择性电路系统连接至封装基板122，以使得裸片114、116能够与PCB 136通信。
如上所述，焊料互连件118被配置为将中介层112与IC裸片114机械且电气地连接。下面参考图2进一步详细说明示例性焊料互连件132的一个示例。将中介层112耦合至封装基板122的另一焊料互连件132可以被类似地构造。
图2是芯片封装110的局部截面图，示出了将两个邻近基板耦合的焊料互连件118中的一个。在图2所描绘的示例中，第一基板被示为IC裸片114，以及第二基板被示为中介层112。IC裸片116可以通过其他焊料互连件118以相同的方式耦合至中介层112。焊料互连件118被配置为在IC裸片114的电路系统202与中介层112的电路系统212之间提供稳健且可靠的高速信号传输。
裸片114具有裸片主体236，通过裸片主体236形成电路系统202。使用包括裸片114主体236的多个金属和介电层来形成电路系统202。如上所述，裸片114的电路系统202可以被配置为逻辑器件，诸如现场可编程门阵列(FPGA)、存储器器件、光学器件、处理器或其他IC逻辑结构。如图1所示，电路系统202耦合至设置在裸片114底侧的焊料互连件118。电路系统202终止于在裸片114底侧形成的接触焊盘204。接触焊盘204可以由铜或其他合适的导体形成。
可选的钝化层(未示出)也可以设置在裸片114的底侧上方。钝化层包括开口，通过开口暴露接触焊盘204。钝化层可以是氮化硅层或其他合适材料层。可以使用化学气相设置(CVD)工艺来沉积氮化硅层。
焊料掩模210设置在裸片114的底侧上。当存在钝化层时，焊料掩模210被沉积在钝化层上。焊料掩模210包括开口，通过开口暴露接触焊盘204。焊料掩模210可以由一层或多层可光成像材料形成。用于形成焊料掩模210的合适的可光成像材料包括丙烯酸或聚酰亚胺塑料可光成像材料、液体可光成像材料、干性可光成像膜、或者备选地，丝网印刷或旋涂在裸片114底侧上的环氧树脂。可以使用光刻技术来图案化包括焊料掩模210的可光成像材料。
可选地，可以通过在焊料掩模210中形成的开口在接触焊盘204上形成凸点下金属(UBM)层218。UBM层218可以包括粘附层、阻挡层和导电种子层中的一个或多个。适合于形成UBM层218的粘附和阻挡材料包括但不限于钛、钛钨(TiW)、镍(Ni)、镍钒(NiV)和/或铬(Cr)。在一个示例中，UBM层218被配置为增强接触焊盘204和在其上形成的导电柱206之间的粘附和信号传递。在一些实现中，UBM层218是导电种子层或包括导电种子层。例如，UBM层218可以包括在导电柱206的设置之前形成在粘附层/阻挡层上方的导电种子层。示例性导电种子层材料包括铜和钛。用于沉积导电种子层材料的示例性工艺包括电化学镀(ECP)工艺、化学镀工艺和PVD工艺。
在不具有可选UBM层218的实施例中，导电柱206被形成在UBM层218上，或者通过焊料掩模210中的开口直接形成在接触焊盘204上。导电柱206可以由铜或其他合适的导电材料制成。导电柱206包括底表面270、侧表面272和顶表面274。在图2所描绘的示例中，柱206的底表面270被直接设置在UBM层218上。顶表面274可以包括可选的镀层(未示出)。可选的镀层可以由铜和镍以及其他材料中的至少一种形成。
柱保护层280设置在导电柱206的侧表面272上。在图2的示例中，柱保护层280覆盖导电柱206的整个侧表面272。柱保护层280由对焊料疏水的无机钝化材料形成。例如，焊料可以与柱保护层280的疏水性的钝化材料表面形成介于90度至180度之间的接触角。在一个示例中，柱保护层280由硫化铜形成。硫化铜通常具有分子式CuxSy，其中X和Y是非负整数(诸如CuS和CuS2等)。在底表面和顶表面270、274上未形成柱保护层280。因此，图2所描绘示例中的柱保护层280仅设置在侧面272上，而底表面和顶表面270、274没有柱保护层280。
如上所讨论的，图2所图示的第二基板是中介层112。中介层112具有中介层主体226，通过中介层主体226形成电路系统212。使用包括中介层112的主体226的多个金属和介电层来形成电路系统212。中介层112的主体226的顶表面通常由介电层形成。如图1所示，电路系统212耦合至设置在中介层112的底侧上的焊料互连件132。电路系统212还终止于形成在中介层112的顶表面上的接触焊盘214。接触焊盘214可以由铜或其他合适的导体形成。
尽管未示出，但是可选的钝化层可以设置在形成在中介层112的顶表面上的接触焊盘214之上。钝化层包括开口，通过该开口暴露接触焊盘214。钝化层可以是氮化硅层或其他合适材料层(诸如如上所述的)。
当存在钝化层时，焊料掩模220设置在钝化层上，或者在不包括诸如图2所示钝化层的示例中，直接设置在中介层112的顶表面上。焊料掩模220包括开口，通过该开口暴露接触焊盘214。可以如上述的那样来形成焊料掩模220。
可选地，可以通过在焊料掩模210中形成的开口而在接触焊盘214上形成凸点下金属(UBM)层228。可以参考以上所讨论的UBM层218如以上所讨论的那样制造UBM层228。
导电柱230形成在UBM层228上，或者在不具有可选的UBM层的实施例中，通过焊料掩模220中的开口直接形成在接触焊盘214上。可以参考导电柱206如以上所讨论的那样制造导电柱230。
导电柱230包括底表面260、侧表面262和顶表面264。在图2所描绘的示例中，柱230的底表面260直接设置在UBM层228上。顶表面264可以包括可选的镀层(未示出)。
柱保护层280布置在导电柱230的侧表面262上。在一个示例中，柱保护层280由硫化铜形成，诸如参考布置在以上所讨论的柱206上的柱保护层280所描述的。柱保护层280未形成在柱230的底表面和顶表面260、264上。换言之，图2所描绘的示例中所示出的柱保护层280仅设置在侧面262上，而柱230的底表面和顶表面260、264没有柱保护层280。
焊料球216将从裸片114延伸的导电柱206的顶表面274和从中介层112延伸的导电柱230的顶表面264电气且机械地耦合。焊料球216和柱230完成电气焊料互连件118，电气焊料互连件118通过接触焊盘204、214将裸片114的电路系统202耦合至中介层112的电路系统212。在一个示例中，焊料球216由包括锡和银(Sn-Ag)的无铅焊料或其他合适的材料组成。
在设置焊料球216和通过焊料球216将柱206、230耦合的期间，由于柱保护层的材料不会被包括焊料球216的焊料润湿，所以柱保护层280有利地防止了焊料从侧表面262、272上的焊料球216中芯吸。防止芯吸有利地保持了焊料球216的量，从而降低了回流后的颈缩、空隙、开裂和IMC脆性的可能性。相应地，焊料互连件118在裸片114、116和中介层112之间提供牢固的电气和机械连接，从而在芯片封装110的焊盘204、214与电路系统202、212之间提供可靠且高效的高速信号传递。附加地，互连件132可以类似地形成在中介层112和芯片封装110的封装基板122之间。
图4是用于形成芯片封装的方法400的流程图，诸如图1中描绘的芯片封装110或结合IC互连件(诸如焊料互连件118和/或焊料互连件132)的其他芯片封装。图3A至图3E是在与方法400相关联的制造的不同阶段期间的芯片封装110的顺序图。尽管图3A至图3E的顺序图示了形成互连件118，但是互连件132可以利用相同的方法400来被形成。
现在参考图3A和图4，方法400通过在第一基板上形成焊料掩模而开始于操作402。如上所述，第一基板可以是裸片、中介层或封装基板。焊料掩模可以是可光成像材料，例如丙烯酸或聚酰亚胺塑料可光成像材料、液体可光成像材料，干性可光成像膜。附加地，焊料掩模可以是丝网印刷或旋涂在第一基板上的环氧树脂。在图3A所描绘的示例中，焊料掩模220包括开口304，通过开口304暴露导电接触焊盘214顶表面306的一部分。可以使用光刻技术在包括焊料掩模220的可光成像材料中形成开口304。焊料掩模220的一部分302设置在顶表面306上并且限定开口304，使得接触焊盘214的侧表面被焊料掩模220完全覆盖。
在操作404，如图3B所示，在经由通过焊料掩模220形成的开口304所暴露的导电焊盘214上形成可选的凸点下金属(UBM)层228。UBM层228包括粘附层、阻挡层和导电种子层中的一个或多个。UBM层228可以由钛、钛钨(TiW)、镍(Ni)、镍钒(NiV)、铬(Cr)和铜(Cu)的一层或多层制成。可以通过电镀、电化学ECP镀、无电镀，PVD或其他合适的工艺来沉积UBM层228。
在操作406，如图3C所示，在UBM层228上形成导电柱230。如果不存在UBM层228，则导电柱230直接形成在通过形成在焊料掩模220中的开口304所暴露的接触焊盘214的暴露表面306上。导电柱230可以由铜或其他合适的导电材料制成。可以通过电镀、PVD或其他合适的工艺来沉积包括柱230的导电材料。导电柱230可以可选地包括镀层。镀层可以由铜和镍以及其他材料中的至少一种形成。
导电柱230包括底表面260，底表面260直接形成在UBM层228的、背离接触焊盘214的表面312上。备选地，在不包括UBM层的实施例中，导电柱230的底表面260可以备选地直接形成在接触焊盘214的暴露的顶表面306上。导电柱230的侧表面262除了天然存在的氧化物之外基本上没有任何涂层。
在操作408，焊料球216被设置在导电柱230上。在图3C所示的示例中，焊料球216直接设置在导电柱230上。焊料球216可以通过任何合适的方法设置。
在操作410，将焊料球216和导电柱230暴露于含硫和卤素的环境。例如，如图3D中所描绘的，环境中存在的硫和卤素与焊料球216和导电柱230相互作用(如箭头324所示)。在围绕导电柱230的环境中与硫的反应引起了形成在导电柱230上的柱保护层280。由于导电柱230的底侧260和顶侧264未暴露于硫，所以柱保护层280仅形成在导电柱230的侧表面272上。在一个示例中，可以以诸如SF6气体之类的含硫气体的形式向导电柱230的侧表面272提供硫。硫可以是离子形式，其可以通过激励含硫气体以形成等离子体而获得。
类似地，暴露于卤素导致存在于焊料球216外部的氧元素(例如，SnO)被卤素元素替代，从而形成焊料球保护层322。被用于形成焊料球保护层322的卤素元素包括含氟气体(诸如SF6)。在图3D所描绘的示例中，焊料球保护层322通过暴露于氟而形成，并且由SnF2组成。卤素(诸如氟)，可以是离子形式，其可以通过激励含卤素的气体以形成等离子体来获得。由于焊料球保护层322的熔点通常低于回流温度，因此焊料球保护层322在组装之前保护焊料球216免于氧化，在回流时的焊接工艺期间，使焊料球216将易于从包括焊料球216的焊料中去湿和脱离。有利地，焊料球保护层322基本上消除了回流后清洗的需要。在一个实例中，卤素元素可以为氟。例如，氟可以被提供在含硫和含氟的气体(诸如SF6)中。尽管可以在时间上单独提供硫和卤素元素，但是如单独的气体处于单一气态化合物中那样将硫和卤素元素同时提供，有利地在单个步骤中形成柱保护层280和焊料球保护层322，从而降低了制造成本和复杂度，同时提高了牢固的焊料互连件的产量和可靠性。
在操作412，将第二基板附接到第一基板。在图3E中所描绘的示例中，裸片114(例如，第二基板)被附接到中介层112(例如，第一基板)。裸片114和中介层112朝向彼此移动，使得布置在每个柱206、230上的焊料球216彼此接触。
在操作414，将第二表面附接到第一基板的焊料连接被回流。例如，设置在彼此接触的每个柱206、230上的焊料球216经受受控的加热工艺。回流工艺使接触的焊料球216熔化，使得焊料球保护层322被去除(如图3E中的箭头332所示)，并且焊料球216成为一体以形成耦合导电柱206、230的单个的焊料连接。成为一体的焊料球216在裸片114和中介层112之间建立了永久的机械和电气的焊料互连件118(诸如图2所示的)。焊料球216可以在回流炉中、在红外灯下或通过其他合适的方法在回流期间被加热。
由于在整个回流工艺中柱保护层280保留在柱206、230的侧表面262、272上，所以柱保护层280基本上防止了来自焊料球216的焊料芯吸到柱206、230的侧表面262、272上。因此，包括形成图2所示互连件118的一体的焊料球216的焊料具有较大的保留的焊料量，并且不易开裂、产生空隙和IMC脆性。
上述的焊料互连件118特别地适合于在裸片114、116和中介层112之间提供牢固的焊料连接。当没有中介层时，焊料互连件118还可用于在裸片114、116和封装基板122之间提供牢固的焊料连接。附加地，也可以参考焊料互连件118如以上所描述的那样制造焊料互连件132，从而在中介层112和封装基板122之间提供牢固的焊料连接。有利地，由于在柱206、230的侧表面262、272上形成的柱保护层280，即使在回流期间，焊料互连件118、132也抗焊料芯吸。而且，由于可以同时形成柱保护层280和焊料球保护层322，因此与传统的焊料互连件工艺相比可以节省成本和工艺时间。
使用焊料互连件118、互连件132或其他类似构造的焊料互连件制造的芯片封装110可以被用于电子设备(诸如上述电子设备100)。以上描述的焊料互连件118、132有利地在包括芯片封装110(诸如，裸片、中介层和封装基板)的各种基板之间提供牢固的焊料连接，从而提高了利用这种互连件制造的芯片封装的性能、成本和可靠性。通过减少颈缩、开裂和IMC脆性的可能性，上述的IC互连件可以被容易地以最小的间距以最小的成本实现，从而有利地提高了可靠性、器件产量和性能。
下面提供了一系列非限制性示例。在一个示例中，可以提供集成电路互连件。这种集成电路互连件可以包括：包含第一电路系统的第一基板；第一接触焊盘，设置在第一基板上并且耦合至第一电路系统；第一柱，被电气地设置在第一接触焊盘之上；第一柱保护层，设置在第一柱的侧表面上，该第一柱保护层对焊料疏水；包含第二电路系统的第二基板；以及焊料球，设置在第一柱上并且电气且机械地将第一基板耦合至第二基板。在这种集成电路互连件中，第一柱保护层可以包括：可以对焊料疏水的无机钝化材料。
在这种集成电路互连件中，第一柱保护层可以由硫化铜形成。
在这种集成电路互连件中，第一柱保护层可以被表示为CuxSy。
在这种集成电路互连件中，第一柱保护层可以是CuS和CuS2中的至少一个。
在这种集成电路互连件中，可以不在第一柱的底表面或顶表面上形成第一柱保护层。
在这种集成电路互连件中，第一基板可以是中介层。
在这种集成电路互连件中，第二基板可以是IC裸片。
在这种集成电路互连件中，第二基板可以是封装基板。
一些这种集成电路互连件还可以包括：第二接触焊盘，设置在第二基板上并且耦合至在第二基板中形成的第二电路系统；以及第二柱，电气地设置在第二接触焊盘上；以及第二柱保护层，设置在第二柱的侧表面上，第二柱保护层对焊料疏水。
在一些这种集成电路互连件中，第二柱保护层可以是：可以对焊料疏水的无机钝化材料。
在一些这种集成电路互连件中，第二柱保护层可以由硫化铜形成。
在另一示例中，可以提供集成电路互连件。这种集成电路互连件可以包括：IC裸片；中介层；从中介层延伸的导电柱；设置在柱上的并且将IC裸片电气且机械地耦合至中介层的焊料球；以及覆盖在导电柱侧表面上的柱保护层，该柱保护层对焊料疏水。
在一些这种集成电路互连件中，柱保护层可以由硫化铜形成。
在一些这种集成电路互连件中，柱保护层可以表示为CuxSy。
在另一示例中，提供了一种用于形成集成电路封装的互连件的方法。这种用于形成集成电路封装的互连件的方法可以包括：在耦合至形成在第一基板中的第一电路系统的柱上设置焊料球；将焊料球和柱暴露于含硫环境中以在柱的侧表面上形成柱保护层，该柱保护层可以对焊料疏水；将第一基板附接到第二基板；以及回流焊料球以将第一基板机械且电气地连接至第二基板。
一些这种方法还可以包括：将焊料球和柱暴露于含卤素的环境中以在焊料球的暴露的外部上形成焊料球保护层。
在一些这种方法中，将焊料球和柱同时暴露于含卤素的环境和含硫的环境。
在一些这种方法中，将焊料球和柱暴露于含卤素的环境和含硫的环境中可以包括：将焊料球和柱暴露于含硫和氟的气体中。
在一些这种方法中，回流焊料球去除了焊料球保护层而不去除柱保护层。
尽管前述内容针对本发明的实施例，但是可以在不脱离本发明基本范围的情况下设计本发明的其他和进一步的实施例，并且本发明的范围由所附权利要求确定。

Claims (14)

1.一种芯片封装，包括：
第一基板，包含第一电路系统；
第一接触焊盘，设置在所述第一基板上并且耦合至所述第一电路系统；
第一柱，被电气设置在所述第一接触焊盘之上；
第一柱保护层，设置在所述第一柱的侧表面上，其中所述第一柱保护层是硫化铜；
第二基板，包含第二电路系统；以及
焊料球，设置在所述第一柱上，并且将所述第一基板电气且机械地耦合至所述第二基板。
2.根据权利要求1所述的芯片封装，其中所述第一柱保护层包括：
抗焊料芯吸的无机钝化材料。
3.根据权利要求1所述的芯片封装，其中所述第一柱保护层被表达为CuxSy。
4.根据权利要求1所述的芯片封装，其中所述第一柱保护层是CuS和CuS2中的至少一个。
5.根据权利要求1所述的芯片封装，其中所述第一柱保护层未被形成在所述第一柱的底表面或顶表面上。
6.根据权利要求1所述的芯片封装，其中所述第一基板是中介层。
7.根据权利要求6所述的芯片封装，其中所述第二基板是IC裸片。
8.根据权利要求6所述的芯片封装，其中所述第二基板是封装基板。
9.根据权利要求1所述的芯片封装，还包括：
第二接触焊盘，设置在所述第二基板上并且耦合至形成在所述第二基板中的所述第二电路系统：
第二柱，电气地设置在所述第二接触焊盘之上；以及
第二柱保护层，设置在所述第二柱的侧表面上，所述第二柱保护层抗焊料芯吸。
10.根据权利要求9所述的芯片封装，其中所述第二柱保护层包括：
抗焊料芯吸的无机钝化材料。
11.根据权利要求10所述的芯片封装，其中所述第二柱保护层由硫化铜形成。
12.一种用于形成集成电路封装的互连件的方法，所述方法包括：
在耦合至形成在第一基板中的第一电路系统的柱上设置焊料球，所述柱由铜制造；
将所述焊料球和所述柱暴露于含硫的气体中，以在所述柱的侧表面上形成抗焊料芯吸的硫化铜(CuxSy)的柱保护层；
将所述第一基板附接到第二基板；以及
回流所述焊料球以将所述第一基板机械且电气地连接至所述第二基板。
13.根据权利要求12所述的方法，还包括：
将所述焊料球和所述柱暴露于含卤素的环境中以在所述焊料球的暴露的外部上形成焊料球保护层。
14.根据权利要求13所述的方法，其中将所述焊料球和所述柱暴露于含卤素的环境和含硫的气体中同时发生。
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