TWI799457B - 具有增進的互連之晶片封裝組件以及製造其之方法 - Google Patents

具有增進的互連之晶片封裝組件以及製造其之方法 Download PDF

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TWI799457B
TWI799457B TW107136756A TW107136756A TWI799457B TW I799457 B TWI799457 B TW I799457B TW 107136756 A TW107136756 A TW 107136756A TW 107136756 A TW107136756 A TW 107136756A TW I799457 B TWI799457 B TW I799457B
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interconnects
fabricating
enhanced
same
chip package
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TW107136756A
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TW201931543A (zh
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賈斯匹利特 辛格 甘地
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美商吉林克斯公司
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  • General Physics & Mathematics (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110304042A1 (en) * 2010-06-11 2011-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Copper Bump Structures Having Sidewall Protection Layers
US20130299965A1 (en) * 2012-05-09 2013-11-14 Micron Technology, Inc. Semiconductor assemblies, structures, and methods of fabrication
US20160079193A1 (en) * 2014-09-12 2016-03-17 International Business Machines Corporation Use of electrolytic plating to control solder wetting

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224981A (ja) 1998-02-06 1999-08-17 Matsushita Electric Ind Co Ltd 半田付け方法および半田バンプの形成方法
US6225206B1 (en) * 1999-05-10 2001-05-01 International Business Machines Corporation Flip chip C4 extension structure and process
US20030116439A1 (en) 2001-12-21 2003-06-26 International Business Machines Corporation Method for forming encapsulated metal interconnect structures in semiconductor integrated circuit devices
US7629249B2 (en) * 2006-08-28 2009-12-08 Micron Technology, Inc. Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods
US8749065B2 (en) * 2007-01-25 2014-06-10 Tera Probe, Inc. Semiconductor device comprising electromigration prevention film and manufacturing method thereof
JP5300345B2 (ja) * 2007-08-10 2013-09-25 キヤノン株式会社 発光膜、発光素子およびその製造方法
KR20090059504A (ko) * 2007-12-06 2009-06-11 삼성전자주식회사 반도체 장치 및 그 제조방법들
US20090176367A1 (en) * 2008-01-08 2009-07-09 Heidi Baks OPTIMIZED SiCN CAPPING LAYER
US9524945B2 (en) * 2010-05-18 2016-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Cu pillar bump with L-shaped non-metal sidewall protection structure
US20100300743A1 (en) * 2009-06-02 2010-12-02 Qualcomm Incorporated Modified Pillar Design for Improved Flip Chip Packaging
US8841766B2 (en) * 2009-07-30 2014-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Cu pillar bump with non-metal sidewall protection structure
US8232643B2 (en) * 2010-02-11 2012-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Lead free solder interconnections for integrated circuits
US8664760B2 (en) 2011-05-30 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Connector design for packaging integrated circuits
US9099396B2 (en) * 2011-11-08 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and method of forming the same
CN102931111B (zh) * 2012-11-08 2015-06-10 南通富士通微电子股份有限公司 半导体封装结构的形成方法
KR101338048B1 (ko) 2012-11-19 2013-12-09 한국과학기술연구원 자극에 따른 온도 변화 측정이 가능한 탐침 센서
US9034769B2 (en) 2012-12-12 2015-05-19 Micron Technology, Inc. Methods of selectively removing a substrate material
US20140362550A1 (en) * 2013-06-11 2014-12-11 Nvidia Corporation Selective wetting process to increase solder joint standoff
US9355980B2 (en) * 2013-09-03 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional chip stack and method of forming the same
JP2015181142A (ja) * 2014-03-03 2015-10-15 新光電気工業株式会社 配線基板及びその製造方法、絶縁層の表面改質方法
US9735123B2 (en) * 2014-03-13 2017-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and manufacturing method
JP2016006812A (ja) 2014-06-20 2016-01-14 富士通株式会社 端子構造、半導体装置、電子装置及び端子の形成方法
KR102192195B1 (ko) 2014-07-28 2020-12-17 삼성전자주식회사 솔더 조인트를 갖는 반도체 소자 및 그 형성 방법
US9875979B2 (en) * 2015-11-16 2018-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive external connector structure and method of forming

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110304042A1 (en) * 2010-06-11 2011-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Copper Bump Structures Having Sidewall Protection Layers
US20130299965A1 (en) * 2012-05-09 2013-11-14 Micron Technology, Inc. Semiconductor assemblies, structures, and methods of fabrication
US20160079193A1 (en) * 2014-09-12 2016-03-17 International Business Machines Corporation Use of electrolytic plating to control solder wetting

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