CN110862091B - 高纯石英砂及其制备方法与应用 - Google Patents
高纯石英砂及其制备方法与应用 Download PDFInfo
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- CN110862091B CN110862091B CN201911356685.2A CN201911356685A CN110862091B CN 110862091 B CN110862091 B CN 110862091B CN 201911356685 A CN201911356685 A CN 201911356685A CN 110862091 B CN110862091 B CN 110862091B
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- quartz sand
- powder
- purity quartz
- solution
- purity
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 239000006004 Quartz sand Substances 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 30
- 239000000243 solution Substances 0.000 claims abstract description 23
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
- 238000003756 stirring Methods 0.000 claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 150000001282 organosilanes Chemical class 0.000 claims abstract description 13
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 13
- 239000012498 ultrapure water Substances 0.000 claims abstract description 13
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 12
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 12
- 239000003513 alkali Substances 0.000 claims abstract description 11
- 239000011259 mixed solution Substances 0.000 claims abstract description 10
- 238000001354 calcination Methods 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 8
- 239000005046 Chlorosilane Substances 0.000 claims abstract description 7
- 239000012670 alkaline solution Substances 0.000 claims abstract description 7
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000005406 washing Methods 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 239000003929 acidic solution Substances 0.000 claims abstract description 5
- 238000005086 pumping Methods 0.000 claims abstract description 3
- 238000012216 screening Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 14
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 5
- 238000005262 decarbonization Methods 0.000 claims description 5
- 239000005049 silicon tetrachloride Substances 0.000 claims description 5
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- POFAUXBEMGMSAV-UHFFFAOYSA-N [Si].[Cl] Chemical compound [Si].[Cl] POFAUXBEMGMSAV-UHFFFAOYSA-N 0.000 claims description 4
- 238000005906 dihydroxylation reaction Methods 0.000 claims description 4
- 239000004576 sand Substances 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- -1 chlorosilicon compound Chemical class 0.000 claims description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 2
- 239000005052 trichlorosilane Substances 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 12
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 6
- 150000001450 anions Chemical class 0.000 abstract description 3
- 230000007062 hydrolysis Effects 0.000 abstract description 2
- 230000002378 acidificating effect Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000007873 sieving Methods 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000005837 radical ions Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
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CN201911356685.2A CN110862091B (zh) | 2019-12-25 | 2019-12-25 | 高纯石英砂及其制备方法与应用 |
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CN201911356685.2A CN110862091B (zh) | 2019-12-25 | 2019-12-25 | 高纯石英砂及其制备方法与应用 |
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CN110862091A CN110862091A (zh) | 2020-03-06 |
CN110862091B true CN110862091B (zh) | 2022-08-02 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111320177B (zh) * | 2020-04-13 | 2023-09-15 | 黄冈师范学院 | 一种去除石英砂粉中羟基的方法 |
CN115196642B (zh) * | 2022-07-04 | 2023-09-26 | 柯瑞林 | 一种二氧化硅的提纯方法 |
CN115490240A (zh) * | 2022-09-28 | 2022-12-20 | 洛阳中硅高科技有限公司 | 高纯度石英砂的制备方法及系统 |
CN116462201A (zh) * | 2023-04-17 | 2023-07-21 | 协鑫高科纳米新材料(徐州)有限公司 | 一种高密度石英砂的制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5141786A (en) * | 1989-02-28 | 1992-08-25 | Shin-Etsu Chemical Co., Ltd. | Synthetic silica glass articles and a method for manufacturing them |
JP2001271031A (ja) * | 2000-03-28 | 2001-10-02 | Dainippon Toryo Co Ltd | 塗料組成物 |
CN101012060A (zh) * | 2007-01-15 | 2007-08-08 | 苏州纳迪微电子有限公司 | 耐碱性超高纯硅溶胶的制备方法 |
CN101848862A (zh) * | 2007-06-25 | 2010-09-29 | 通用电气公司 | 制备高纯度硅的方法 |
CN103332694A (zh) * | 2013-06-09 | 2013-10-02 | 宁夏富乐德石英材料有限公司 | 石英坩埚用原料砂的制备方法 |
CN103950941A (zh) * | 2014-05-12 | 2014-07-30 | 连云港市东海县宏伟石英制品有限公司 | 一种化学法制备超高纯石英粉体的方法 |
CN110182814A (zh) * | 2019-04-20 | 2019-08-30 | 黄冈师范学院 | 一种SiO2纯度大于5N的高纯石英砂的生产方法 |
-
2019
- 2019-12-25 CN CN201911356685.2A patent/CN110862091B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5141786A (en) * | 1989-02-28 | 1992-08-25 | Shin-Etsu Chemical Co., Ltd. | Synthetic silica glass articles and a method for manufacturing them |
JP2001271031A (ja) * | 2000-03-28 | 2001-10-02 | Dainippon Toryo Co Ltd | 塗料組成物 |
CN101012060A (zh) * | 2007-01-15 | 2007-08-08 | 苏州纳迪微电子有限公司 | 耐碱性超高纯硅溶胶的制备方法 |
CN101848862A (zh) * | 2007-06-25 | 2010-09-29 | 通用电气公司 | 制备高纯度硅的方法 |
CN103332694A (zh) * | 2013-06-09 | 2013-10-02 | 宁夏富乐德石英材料有限公司 | 石英坩埚用原料砂的制备方法 |
CN103950941A (zh) * | 2014-05-12 | 2014-07-30 | 连云港市东海县宏伟石英制品有限公司 | 一种化学法制备超高纯石英粉体的方法 |
CN110182814A (zh) * | 2019-04-20 | 2019-08-30 | 黄冈师范学院 | 一种SiO2纯度大于5N的高纯石英砂的生产方法 |
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Effective date of registration: 20211209 Address after: 215000 No. 45, Chunxing Road, Caohu street, Suzhou, Jiangsu Applicant after: Suzhou xilika Electronic Material Co.,Ltd. Address before: 215000 No. 488 Songshan Road, high tech Zone, Suzhou City, Jiangsu Province Applicant before: Suzhou Nanodispersions Ltd. |
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Effective date of registration: 20240517 Address after: 1005, Business Building, No.1 Bohai Road, Changsha Town, Rudong County, Nantong City, Jiangsu Province, 226000 Patentee after: Nantong Xilika New Materials Co.,Ltd. Country or region after: China Address before: 215000 No. 45, Chunxing Road, Caohu street, Suzhou, Jiangsu Patentee before: Suzhou xilika Electronic Material Co.,Ltd. Country or region before: China |