CN110729209A - 用于接合半导体封装件的接合头和方法、半导体封装件 - Google Patents
用于接合半导体封装件的接合头和方法、半导体封装件 Download PDFInfo
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- CN110729209A CN110729209A CN201910617940.8A CN201910617940A CN110729209A CN 110729209 A CN110729209 A CN 110729209A CN 201910617940 A CN201910617940 A CN 201910617940A CN 110729209 A CN110729209 A CN 110729209A
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Abstract
提供了用于接合半导体封装的方法、接合头以及半导体封装件,所述方法包括:将半导体芯片装载在衬底上,并通过使用接合工具将半导体芯片接合到衬底,所述接合工具包括用于按压半导体芯片的按压表面以及从按压表面的一侧延伸的倾斜表面。将半导体芯片接合到衬底包括:通过按压接合工具使设置在衬底和半导体芯片之间的接合剂变形,并且使接合剂变形包括:通过将接合剂的一部分突出超过半导体芯片来生成圆角,并以圆角的顶表面沿着所述倾斜表面生长的方式生长圆角。
Description
相关申请的交叉引用
2018年7月17日在韩国知识产权局提交的题为“Head and Method for BondingSemiconductor Package,and Semiconductor Package”的韩国专利申请No.10-2018-0082679通过引用其全部并入本文。
技术领域
各实施例涉及一种用于接合半导体封装件的接合头和方法,更具体地,涉及一种能够沿接合工具的倾斜表面生长圆角(fillet)的接合头,使用该接合头接合半导体封装件的方法,以及通过该方法制造的半导体封装件。
背景技术
随着电子工业的发展,越来越需要高性能、高速和小型化的电子组件。为了满足这些需求,可以将多个半导体芯片层叠在一个衬底上和/或可以将一个封装件层叠在另一个封装件上。
这些半导体安装技术可能需要在衬底与半导体芯片之间或者在层叠的各半导体芯片和/或封装件之间接合电连接端子的处理。接合处理可包括回流焊接处理和热压缩处理。
发明内容
在一个方面,一种用于接合半导体封装件的方法可以包括:将半导体芯片装载在衬底上,以及通过使用接合工具将半导体芯片接合到衬底。接合工具可以包括用于按压半导体芯片的按压表面以及从按压表面一侧延伸的倾斜表面。半导体芯片与衬底的接合可以包括:通过按压接合工具使设置在衬底和半导体芯片之间的接合剂变形。接合剂的变形可以包括:通过使接合剂的一部分突出超过半导体芯片来产生圆角;以及以圆角的顶表面在倾斜表面的延伸方向上生长的方式生长圆角。
在一个方面,用于半导体封装件的接合头可以包括用于接合半导体封装件的接合工具。接合工具可以包括用于按压半导体芯片的按压表面以及用于引导圆角的生长方向的倾斜表面。
在一个方面,半导体封装件可以包括衬底、半导体芯片和在衬底和半导体芯片之间的接合剂。接合剂可以包括设置在衬底和半导体芯片之间的接合部分以及从接合部分突出到半导体芯片外部的圆角。
圆角的顶表面可以相对于半导体芯片的芯片顶表面倾斜。
附图说明
通过参考附图详细描述示例性实施例,各特征对于本领域技术人员将变得明显,图中:
图1示出了根据一些实施例的用于接合半导体封装件的设备的示意图。
图2示出了根据一些实施例的用于半导体封装件的接合头的立体图。
图3示出了沿图2中的线A-A’的截面图。
图4示出了根据一些实施例的用于接合半导体封装件的方法的流程图。
图5示出了衬底的截面图。
图6示出了装载图4中的半导体芯片的操作的截面图。
图7和图8示出了图4中的接合操作的截面图。
图9示出了生成图4中的圆角的截面图。
图10和图11示出了图4中的生长圆角的截面图。
图12示出了图4中的移除接合工具的截面图。
图13示出了通过接合工具彼此接合的半导体芯片和衬底的形状的截面图。
图14示出了根据一些实施例的用于半导体封装件的接合头的截面图。
图15示出了根据一些实施例的用于半导体封装件的接合头的立体图。
图16示出了根据一些实施例的用于半导体封装件的接合头的截面图。
图17示出了根据一些实施例的用于半导体封装件的接合头的立体图。
具体实施方式
在下文中,将参考附图详细描述各实施例。在说明书中,相同的附图标记或相同的参考标记表示相同的元件。
图1是示出根据一些实施例的用于接合半导体封装件的设备的示意图,图2是示出接合头的立体图,图3是沿图2中的线A-A’截取的截面图。
在图1中,右方向被称为第一方向D1,向上方向被称为第二方向D2。另外,垂直于第一方向D1和第二方向D2并且朝向页面的方向被称为第三方向D3。在下文中,包括第一方向D1和与第一方向D1的相反方向被称为水平方向。第二方向D2被称为向上方向,与第二方向D2的相反方向被称为向下方向。
参照图1,可以提供接合设备B。接合设备B可以将半导体芯片3接合到设置在接合台8上的衬底5。接合设备B可以执行将半导体芯片3接合到衬底5的热压缩处理。热压缩处理可以通过热和压力将半导体芯片3接合至衬底5。可以在比回流焊接处理的处理温度低的温度下执行热压缩处理。
当通过热压缩处理接合半导体封装件时,可以减少在半导体封装件处发生的热应力。可以通过减小热应力来最小化或防止缺陷(例如,翘曲),因此可以保持半导体封装件的性能和功能。当通过热压缩处理接合半导体封装件时,可以容易地对准和接合细间距的各凸块。此外,由于使用细间距的凸块,所以可以减小半导体封装件的尺寸。
如图1所示,半导体芯片3可以通过接合剂7接合至衬底5。在热压缩处理中,接合剂7的形状可以受接合设备B的压迫而变形。
接合设备B可以包括接合头1和接合体2。接合头1可以耦接到接合体2。接合头1可以将热量施加到设置在衬底5上的半导体芯片3和/或可以直接或间接地按压半导体芯片3。接合体2可以移动接合头1,可以向接合头1供应热量,和/或可以向接合头1提供真空压力。接合体2可以例如沿着向上方向和向下方向竖直延伸特定长度。接合体2可以连接到真空压力产生器V、移动单元A和加热电源P。真空压力产生器V可以向接合体2和接合头1提供相当大的真空压力。移动单元A可以在水平方向上移动接合设备B和/或可以在向上方向和向下方向上移动接合设备B来按压半导体芯片3。加热电源P可以向接合设备B供应能量,以允许接合头1向半导体芯片3供应热量。在一些实施例中,加热电源P的施加到接合设备B的能量可以是电能。在某些实施例中,加热电源P可以通过热传递方法将能量供应到接合设备B。在某些实施例中,接合台8还可以将热量施加到诸如衬底5的组件上。这些将在后面更详细地描述。
如图1所示,在一些实施例中,用于半导体封装件的接合头1可包括接合工具11和支撑件13。支撑件13可连接在接合体2和接合工具11之间。
参照图2和图3,接合工具11可以向半导体芯片3施加热量和/或可以直接或间接地按压半导体芯片3。接合工具11可以包括金属材料。在一个实施例中,接合工具11可以包括铝。然而,实施例不限于此。接合工具11可包括按压表面111、倾斜表面113和顶表面115(见图3)。
具体地,按压表面111可以位于接合工具11的底部,即,面向半导体芯片3的表面。按压表面111可以在水平方向上延伸。按压表面111可以按压半导体芯片3。在一些实施例中,按压表面111可以与半导体芯片3的芯片顶表面31接触(参见图6)并且可以按压半导体芯片3。在一些实施例中,按压表面111可以通过介于其间的保护片91(参见图14)按压半导体芯片3,如下面将更详细地描述。
在一些实施例中,按压表面111可以具有与半导体芯片3的芯片顶表面31的形状对应的形状。例如,如果半导体芯片3的芯片顶表面31具有矩形形状,则按压表面111可以具有矩形形状。在某些实施例中,按压表面111可以具有圆形形状(参见图15和图17)。在某些实施例中,按压表面111可以具有能够按压半导体芯片3的其他各种形状中的一种。在一些实施例中,按压表面111的面积可以等于或大于半导体芯片3的芯片顶表面31的面积。在某些实施例中,按压表面111的面积可以小于半导体芯片3的芯片顶表面31的面积。将在后面更详细地描述按压表面111。
倾斜表面113可以从按压表面111的一侧延伸。倾斜表面113可以与按压表面111的延伸部分形成特定角度α(见图3)。例如,该角度α可以是斜角,例如,该角度α可以不是0度和/或90度。例如,如图3所示,该角度α可以是锐角。包括倾斜表面113的接合工具11可以具有锥形形状,其横截面面积朝向其底部逐渐变小。例如,随着沿向上方向距离按压表面111的距离增加,倾斜表面113的相对部分之间沿水平方向的距离可以增加,例如,接合工具11可以具有倒梯形的横截面。
在一些实施例中,倾斜表面113可包括多个倾斜表面,例如四个倾斜表面。例如,如图2中所示,四个倾斜表面可以分别称为第一倾斜表面113a、第二倾斜表面113b、第三倾斜表面113c和第四倾斜表面113d。四个倾斜表面113a、113b、113c和113d中的每一个可以从按压表面111的不同侧延伸。例如,如果按压表面111是四边形,则四个倾斜表面113a、113b、113c和113d中的每一个可以从四边形按压表面111的不同侧延伸。在另一个示例中,如果按压表面111是圆形,则倾斜表面113可以是从圆形按压表面111的周边延伸的一个弯曲表面113’或113”(见图15或图17)。在实施例中,在接合工具11具有锥形形状的情况下,倾斜表面113的形状和数量可以进行各种修改,例如,随着距支撑件13的距离增加而宽度减小。将在后面更详细地描述倾斜表面113。
参照图3,顶表面115可以位于接合工具11的顶部。顶表面115可以在水平方向上延伸。顶表面115可以基本平行于按压表面111。顶表面115可以与支撑件13接触,例如与支撑件13直接接触。在一些实施例中,顶表面115的形状可以与支撑件13的吸附表面131的形状基本相同或相似。可替换地,在某些实施例中,顶表面115的形状可以与吸附表面131的形状不同。这将在后面参照图15和图17更详细地描述。
在一些实施例中,接合工具11还可包括吸附孔117。吸附孔117可以是从顶表面115朝向按压表面111延伸的孔,例如,穿过接合工具11的整个厚度。吸附孔117可以沿向上方向/向下方向延伸。吸附孔117的内部可以变成基本真空状态。当吸附孔117保持在真空状态时,半导体芯片3可以被吸附在按压表面111上。接合工具11可以按压半导体芯片3并且还可以传送半导体芯片3。在某些实施例中,接合工具11可以不包括吸附孔117。在这种情况下,半导体芯片3可以通过另外的传送单元来传送。
支撑件13可以将接合工具11耦接到接合体2(见图1)。支撑件13可包括金属材料。在一个实施例中,支撑件13可包括铝。在一个实施例中,支撑件13可以具有矩形平行六面体形状。然而,实施例不限于此。支撑件13可包括吸附表面131和通孔133。吸附表面131可位于支撑件13的底部,即,面向接合工具11的顶表面115。吸附表面131可以与接合工具11的顶表面115接触。通孔133可以是从支撑件13的吸附表面131沿向上方向延伸的孔,例如,穿过支撑件13的整个厚度。
可以设置多个通孔133。通孔133中的一个通孔133可以连接到接合工具11的吸附孔117,例如,通孔133和吸附孔117可以彼此对准并重叠,以限定穿过接合头1的组合通道。通孔133和吸附孔117可以连接到真空压力产生器V(见图1)。真空压力产生器V可以在通孔133和吸附孔117中形成基本真空状态。
支撑件13可以耦接至接合工具11。在一些实施例中,支撑件13和接合工具11可以可拆卸地彼此耦接。通孔133可以处于基本真空状态。当通孔133保持在真空状态时,接合工具11的顶表面115可以被吸附在吸附表面131上,例如,接合工具11的顶表面115与吸附表面131可以仅通过吸附而彼此耦接。接合工具11可以固定在支撑件13的特定位置。当通孔133未处于真空状态时,接合工具11的顶表面115可以从吸附表面131上脱离。换句话说,可以解除支撑件13与接合工具11的耦接。根据待接合的半导体芯片的尺寸和形状,各种接合工具11可以与一个支撑件13一起使用。在某些实施例中,支撑件13和接合工具11可以彼此一体地形成为单个整体。接合工具11也可以不从支撑件13脱离。
可以加热支撑件13。例如,参照图1,可以将来自加热电源P的能量供应至接合体2来加热支撑件13。接合体2还可以包括加热构件。加热构件可包括具有电阻的导体。当电能从加热电源P施加到加热构件时,可以从加热构件产生焦耳热。因此,接合体2的温度可升高,从而将热量从温度高的接合体2传递至支撑件13。支撑件13的热量可以传递到接合工具11。在某些实施例中,接合体2可以不包括加热构件。在这种情况下,支撑件13可包括加热构件。加热构件可包括具有电阻的导体。当电能从加热电源P施加到加热构件时,可以从加热构件产生焦耳热。因此,支撑件13的温度可升高。热量可以从温度高的支撑件13传递至接合工具11。这稍后将更详细地描述。
图4是示出根据一些实施例的用于接合半导体封装件的方法的流程图。图5至图13是示出用于接合半导体封装件的方法的各阶段的截面图。
参照图4,根据一些实施例的用于接合半导体封装件的方法可以包括:装载半导体芯片(S1),接合半导体芯片(S2),以及移除接合工具(S3)。
参照图4和图5,可以提供衬底5。例如,衬底5可以包括印刷电路板(PCB)或晶片。衬底5可以包括衬底5的顶表面51上的连接焊盘511和凸块513。例如,连接焊盘511可以设置在衬底5的顶表面51的中央部分处。然而,实施例不限于此,例如,连接焊盘511可以设置在非中央位置。可以设置多个连接焊盘511。
连接焊盘511可以在后续处理中电连接到半导体芯片3。连接焊盘511可包括导体。例如,连接焊盘511可以包括焊料或铜。
在一些实施例中,连接焊盘511可以形成在从衬底5的顶表面51向下凹陷的区域中。在某些实施例中,连接焊盘511可以形成在与衬底5的顶表面51基本上相同的平面上。在某些实施例中,连接焊盘511可以从衬底5的顶表面51向上突出。
在一些实施例中,凸块513可以设置在衬底5的顶表面51的边缘。可以设置多个凸块513。每个凸块513可以将衬底5电连接到另一组件。衬底5可以通过凸块513电连接到例如另一衬底、另一半导体芯片或另一封装件。凸块513可以包括导体。例如,凸块513可以包括焊料或铜。
参照图4和图6,半导体芯片3可以在半导体芯片的装载期间以倒装芯片方式定位在衬底5上(操作S1)。半导体芯片3可以包括芯片顶表面31、芯片侧壁33和芯片底表面35。在一些实施例中,芯片顶表面31和芯片底表面35可以具有矩形形状。然而,实施例不限于此。芯片顶表面31和芯片底表面35可以具有其他形状。芯片侧壁33可以连结或结合至芯片顶表面31和芯片底表面35。
芯片底表面35可以具有芯片凸块351。芯片凸块351可以从芯片底表面35沿向下方向延伸特定长度。可以提供多个芯片凸块351。芯片凸块351可以分别对应于衬底5的连接焊盘511。芯片凸块351的数量可以等于连接焊盘511的数量。芯片凸块351可以将半导体芯片3电连接到衬底5。芯片凸块351可以包括导体。
在一些实施例中,每个芯片凸块351可以包括从芯片底表面35向下延伸的柱体3511和耦接到柱体3511底部的帽部3513。柱体3511可以包括铜。换句话说,柱体3511可以是铜柱凸块。帽部3513可包括焊料。换句话说,帽部3513可以是焊帽。在某些实施例中,每个芯片凸块351可以仅由焊料形成。
在一些实施例中,半导体芯片3可以通过吸附孔117吸附到接合工具11,然后可以被移动到衬底5上。半导体芯片3可以在半导体芯片3与按压表面111接触的状态下被移动到衬底5上。可替换地,半导体芯片3可以在半导体芯片3经由保护片91吸附到接合工具11的状态下被移动到衬底5上(见图14)。在某些实施例中,半导体芯片3可以通过另外的传送单元移动到衬底5上。当半导体芯片3设置在衬底5上方的适当位置时,各芯片凸块351可以分别与各连接焊盘511对准。
可以将接合剂7设置在半导体芯片3和衬底5之间。接合剂7可以包括非导电膜(NCF)、非导电糊剂(NCP)、各向异性导电膜、各向异性导电糊剂和热固性粘合剂中的至少一种。
在一些实施例中,半导体芯片3可以在接合剂7设置在芯片底表面35上的状态下被移动到衬底5上。当接合剂7设置在半导体芯片3的芯片底表面35上的状态下移动接合剂7时,接合剂7可以是固态。
在某些实施例中,半导体芯片3可以被移动到其上设置或涂覆有接合剂7的衬底5上。换句话说,接合剂7可以直接设置或涂覆在衬底5上。接合剂7可以是固态,或者可以是液态或糊剂状。
参照图4至图8,可以通过接合头1执行接合操作S2。参照图7,在一些实施例中,可以装载接合头1以将半导体芯片3接合到衬底5。参照图8,接合头1可以在向下方向上移动。因此,按压表面111可以与半导体芯片3的芯片顶表面31接触。在一些实施例中,当半导体芯片3通过吸附孔117吸附到接合工具11的状态下移动半导体芯片3时,按压表面111可能在接合操作S2开始时已经与芯片顶表面31接触。
参照图4和图9,接合操作S2可以包括使接合剂7变形的操作S21和硬化操作S22。在使接合剂7变形的操作S21中,接合头1可以在向下方向上连续移动。在一些实施例中,按压表面111的面积可以大于芯片顶表面31的面积。在这种情况下,按压表面111可以包括对应表面1111(即,与芯片顶表面31对应(例如,直接接触)的部分)和延伸表面1113(即,从对应表面1111延伸但不面向(例如,不直接接触)芯片顶表面31的部分)。在某些实施例中,按压表面111的面积可以等于芯片顶表面31的面积,即,因此可以省略延伸表面1113。使接合剂7变形的操作S21可以包括产生圆角(S211)和生长圆角(S212)。
在产生圆角的操作S211中,按压表面111可以按压半导体芯片3的芯片顶表面31。半导体芯片3可以通过接合工具11在向下方向上移动。半导体芯片3的芯片底表面35可以沿向下方向按压接合剂7和柱体3511。各柱体3511可以分别按压各帽部3513。在一些实施例中,帽部3513可以部分地插入衬底顶表面51的其中形成连接焊盘511的凹陷区域中。在某些实施例中,帽部3513可以与形成在衬底顶表面51上的连接焊盘511接触,然后可以被压迫。
在产生圆角的操作S211中,可以通过从加热电源P供应的能量来加热接合工具11(见图1)。接合工具11可以将热量传递到半导体芯片3。半导体芯片3可以加热接合剂7、柱体3511和帽部3513。
在一些实施例中,当接合剂7处于固态时,接合剂7的状态可以通过加热变为液态或糊剂状态。在特定实施例中,接合剂7可以已经处于液态或糊剂状态。可以按压接合剂7。由于接合工具11对接合剂7的压力,接合剂7的一部分可以从半导体芯片3的芯片底表面35突出至超出半导体芯片3或者在半导体芯片3外部。更详细地,接合剂7的一部分可以相对于半导体芯片3在水平方向上突出超过芯片底表面35。换句话说,接合剂7的该部分可以从芯片底表面35和衬底5之间横向突出。设置(例如,直接设置)在半导体芯片3下方的接合剂7的一部分(即,图9中的虚线之间的与半导体芯片3重叠的部分)可以称为接合部分71,并且接合剂7的突出部分(即,不与半导体芯片3重叠的部分)可以被称为圆角73。在第一方向D1上从芯片底表面35下方突出的圆角73可以在第一方向D1上凸出。在与第一方向D1的相反方向上从芯片底表面35下方突出的圆角73可以在与第一方向D1的相反方向上凸出。例如,圆角73可以包围例如半导体芯片3的整个周界。
参照图4和图10,在生长圆角73的操作S212中,接合头1可以进一步沿向下方向移动。因此,按压表面111可以进一步按压半导体芯片3。半导体芯片3的芯片底表面35可以进一步按压柱体3511和接合剂7。可以压缩帽部3513和连接焊盘511。可以进一步加热柱体3511、帽部3513和接合剂7。帽部3513的温度可低于焊料的熔点。因此,如果未施加压力,则帽部3513和连接焊盘511可以不熔化。然而,根据实施例,接合工具11可以按压帽部3513和连接焊盘511,因此帽部3513和连接焊盘511可以在比熔点低的温度下部分地熔化。帽部3513可以接合到连接焊盘511。
半导体芯片3的芯片底表面35可以进一步按压接合剂7,因此接合部分71的一部分可以进一步移动至超出半导体芯片3或在半导体芯片3外部。因此,可以生长或放大圆角73。圆角73可以沿向上方向生长。
在一些实施例中,圆角73可以在向上方向上生长,然后可以到达延伸表面1113。当圆角73到达延伸表面1113时,圆角73在向上方向上的生长可以停止。此后,可以在水平方向上生长圆角73。在到达延伸表面1113之后圆角73在水平方向上的生长可以生长到倾斜表面113。在某些实施例中,当不存在延伸表面1113时,圆角73可以在向上方向上生长到倾斜表面113。
参照图11,按压表面111可以进一步按压半导体芯片3。因此,半导体芯片3的芯片底表面35可以进一步按压柱体3511和接合剂7。各柱体3511可以进一步分别按压各帽部3513。帽部3513和连接焊盘511可以被进一步压缩。各帽部3513可以进一步分别接合到各连接焊盘511。
当半导体芯片3的芯片底表面35连续地按压接合剂7时,可以沿着倾斜表面113的延伸方向生长圆角73的圆角顶表面731。倾斜表面113可以引导圆角顶表面731的生长方向。当倾斜表面113的延伸方向与按压表面111的延伸方向形成特定角度α(见图3)时,圆角顶表面731的延伸方向可以与芯片顶表面31形成所述特定角度α。
圆角顶表面731可以在倾斜表面113的延伸方向上生长,因此圆角73可以在向上方向上以及在水平方向上进一步生长。因此,圆角73在水平方向上的长度可以相对减小。在一些实施例中,圆角顶表面731可以与倾斜表面113接触并且可以沿着倾斜表面113生长。在某些实施例中,圆角顶表面731可以与保护片91(见图14)接触并且可以在倾斜表面113的延伸方向上生长。这将在后面参考图14更详细地描述。
参照图4和图11,当接合剂7的形状变形为所需形状或者各帽部3513分别充分地接合到各连接焊盘511时,生长圆角73的操作S212可以完成。当生长圆角73的操作S212完成时,硬化操作S22可以开始。在硬化操作S22中具有变形形状的接合剂7可以被硬化。硬化的接合剂7可以是固态或接近固体的状态。帽部3513和连接焊盘511可以固定在各帽部3513分别电连接到各连接焊盘511的状态下。在一些实施例中,在硬化操作S22中可以进一步将热量施加到半导体芯片3或接合剂7。接合剂7可以通过施加的热量而硬化。然而,实施例不限于此。接合剂7可以通过其他一种或多种方法硬化。硬化的接合剂7可以是固态或接近固体的状态。
如上所述,熔化和接合帽部3513和连接焊盘511的操作以及使接合剂7变形和硬化的操作可以基本上同时进行。
参照图4和图12,在硬化操作S22完成之后,可以执行移除接合工具11的操作S3。在移除接合工具11的操作S3中,包括接合工具11的接合头1可以在向上方向上移动。按压表面111可以与芯片顶表面31分离。倾斜表面113可以与圆角顶表面731分离。
如果按压表面111的延伸方向垂直于倾斜表面113的延伸方向,即,如果α等于90度,则当接合工具11沿第二方向D2移动时,圆角73会粘住或粘附到倾斜表面113。在这种情况下,圆角73将抓紧(例如,粘住)倾斜表面113,因此接合工具11将从支撑件13上脱离。可替换地,圆角73将暂时地抓紧倾斜表面113,并且因此接合工具11和支撑件13的耦接位置将改变。如果接合工具11偏离设定位置,则在后续的接合处理中可能发生错误。因此,可能会延迟接合处理,并且可能会延迟整个处理。因此,可能会降低处理效率。
相反地,根据实施例,按压表面111的延伸方向可以不垂直于倾斜表面113的延伸方向(α≠90度)。因此,当接合工具11沿第二方向D2移动时,倾斜表面113可以容易地从圆角顶表面731上脱离。换句话说,可以防止圆角73粘附到倾斜表面113上。结果,可以防止接合工具11通过圆角73与支撑件13脱离。另外,可以防止接合工具11和支撑件13的耦接位置因圆角73而改变。因此,接合工具11可以固定在设定位置。结果,可以平稳地执行后续的接合处理。可以快速执行接合处理,并且可以快速执行整个处理。因此,可以提高处理效率。
在实施例中,虽然接合头1不具有保护膜,但是接合头1也可以防止倾斜表面113耦接或粘附到圆角顶表面731上。结果,可以减少用于处理的设备的各部件的数量,并且可以降低处理成本。
图13是示出根据一些实施例的通过用于接合半导体封装件的方法而彼此接合的衬底和半导体芯片的截面图。
参照图13,衬底5的各连接焊盘511可以分别电连接到半导体芯片3的各帽部3513。电流可以在衬底5和半导体芯片3之间流动。彼此连接的每个连接焊盘511和每个帽部3513可以由接合剂7支撑和/或保护。
圆角顶表面731可以相对于半导体芯片3的芯片顶表面31倾斜。更详细地,圆角顶表面731可以与芯片顶表面31形成特定角度α’。角度α’可以不是0度和/或90度。角度α’可以与角度α基本上相等或相似。
包括圆角73的接合剂7可以向上生长,如图12所示。因此,可以减小接合剂7在水平方向上的长度。结果,衬底5上的凸块513可以不被接合剂7损坏,并且可以保持凸块513的形状和/或功能。另外,凸块513可以相对靠近半导体芯片3设置,因此可以减小衬底5在水平方向上的长度。换句话说,可以减小衬底5的尺寸。
在将半导体芯片3接合到衬底5之后,可以将另一半导体芯片层叠在该半导体芯片3上。可替换地,可以将另一衬底或另一封装件层叠在该半导体芯片3上。另一衬底或另一封装件可以通过衬底5的凸块513电连接到衬底5。可以用模制材料填充空余空间以保护凸块513和半导体芯片3。由于衬底5的尺寸减小,包括衬底5的半导体封装件的尺寸也可以减小。
图14是示出根据一些实施例的半导体芯片、衬底和用于半导体封装件的接合头的截面图。
在下文中,为了便于说明,将省略或简要地提及与图1至图13的实施例中相同或相似的元件和技术特征的描述。换句话说,下面将主要描述本实施例与图1至图13的实施例之间的差异。
参照图14,用于半导体封装件的接合头还可包括保护单元9。保护单元9可包括保护片91和卷轴(reel)93。保护片91可覆盖按压表面111和/或倾斜表面113的一部分。保护片91可以防止按压表面111和/或倾斜表面113与接合剂7(例如,直接)接触。保护片91可以防止按压表面111和/或倾斜表面111受到接合剂7的污染。保护片91可以防止接合剂7粘附到按压表面111和/或倾斜表面113。按压表面111可以按压半导体芯片3的芯片顶表面31,其中保护片91介于按压表面111与芯片顶表面31之间。倾斜表面113可以引导圆角73的生长方向,其中保护片91介于倾斜表面113与圆角73之间。圆角顶表面731可以在倾斜表面113的延伸方向上沿着保护片91生长。卷轴93可以改变保护片91的方向和/或可以移动保护片91。当一个接合过程处理完成后,保护片91可以用一个新的保护片或一个新部分替换。
图15是示出根据一些实施例的用于半导体封装件的接合头的立体图。
在下文中,为了便于说明,将省略或简要地提及与图1至图13的实施例中相同或相似的元件和技术特征的描述。换句话说,下面将主要描述本实施例与图1至图13的实施例之间的差异。
参照图15,接合头1’可包括接合工具11’和支撑件13。接合工具11’可包括按压表面111’和倾斜表面113’。按压表面111’可以按压半导体芯片3。按压表面111’可以具有圆形形状。按压表面111’的面积可以等于或大于半导体芯片3的芯片顶表面31的面积。倾斜表面113’可以是弯曲表面。倾斜表面113’的水平横截面积可以从按压表面111’朝向接合工具11’的顶表面逐渐变大。包括倾斜表面113’的接合工具11’可以具有锥形形状。接合工具11’可以具有截头锥形状。圆角可以沿倾斜表面113’的延伸方向生长。
图16是示出根据一些实施例的半导体芯片、衬底和用于半导体封装件的接合头的截面图。
在下文中,为了便于说明,将省略或简要地提及与图1至图13的实施例中相同或相似的元件和技术特征的描述。换句话说,下面将主要描述本实施例与图1至图13的实施例之间的差异。
参照图16,接合工具11”可包括倾斜表面113”。与图2类似,倾斜表面113”可包括第一倾斜表面113a”、第二倾斜表面113b、第三倾斜表面113c和第四倾斜表面113d。与图2不同,第一倾斜表面113a”可以包括具有各种角度的多个表面。例如,第一倾斜表面113a”可包括第一倾斜表面部分113a-1和第二倾斜表面部分113a-2。第一倾斜表面部分113a-1可以从按压表面111的一侧沿右上方向延伸。第一倾斜表面部分113a-1的延伸方向可以与按压表面111的延伸方向形成特定角度β。例如,角度β可以小于角度α(见图3)。第二倾斜表面部分113a-2可以将第一倾斜表面部分113a-1连结或结合到顶表面115。第二倾斜表面部分113a-2的延伸方向可以与按压表面111的延伸方向形成特定角度γ。角度γ可以大于角度β。角度γ可以大于角度α。例如,第一倾斜表面113a”可以具有多于两个表面部分。
接合工具11”可以在向下方向上移动,因此按压表面111可以按压半导体芯片3。接合剂7可以横向突出至超过半导体芯片3以形成圆角。圆角可以沿第一倾斜表面部分113a-1的延伸方向生长。第一倾斜表面部分113a-1可以与按压表面111形成角度β,并且角度β可以小于角度d。因此,圆角的生长方向可以朝水平方向相对倾斜。当圆角顶表面生长然后与第二倾斜表面部分113a-2相遇时,圆角顶表面可以沿着第二倾斜表面部分113a-2的延伸方向生长。第二倾斜表面部分113a-2可以与按压表面111形成角度γ,并且角度γ可以大于角度β。因此,圆角的生长方向可以朝向上方向相对倾斜。圆角可以快速向上生长。
随着倾斜表面和按压表面111之间的角度减小,粘附到接合工具11”的接合剂7的量可以减少。第一倾斜表面部分113a-1与按压表面111之间的角度β可以小于角度α。因此,接合剂7可以相对较少地粘附到接合工具11”。
当倾斜表面113和按压表面111之间的角度很大时,圆角可以向上生长。凸块513可以设置在衬底5的顶表面的边缘。因此,可能需要防止圆角朝向衬底5的边缘生长。圆角可以朝向衬底的边缘生长,然后当遇到第二倾斜表面部分113a-2时可以快速向上生长。因此,可以防止圆角在水平方向上生长连接到凸块513。
可以通过包括具有各种角度的多个表面的倾斜表面来防止接合剂7对接合工具11”的粘附和接合剂7在第一方向D1上的生长。
第二倾斜表面113b、第三倾斜表面113c和第四倾斜表面113d中的每一个可包括具有各种角度的多个表面,像第一倾斜表面113a”一样。在某些实施例中,第一倾斜表面113a”、第二倾斜表面113b、第三倾斜表面113c和第四倾斜表面113d中的每一个可包括具有彼此不同角度的三个或更多个表面。在这种情况下,每个倾斜表面可以被称为第x-n倾斜表面113x-n。这里,‘x’可以是‘a’、‘b’、‘c’或‘d’,‘n’可以是具有彼此不同角度的表面的数量。当‘n’无限增加时,倾斜表面113a至113d中的每个可以变成弯曲表面。
图17是示出根据一些实施例的用于半导体封装件的接合头的立体图。
在下文中,为了便于说明,将省略或简要地提及与图1至图13的实施例中相同或相似的元件和技术特征的描述。换句话说,下面将主要描述本实施例与图1至图13的实施例之间的差异。
参照图17,接合头1a可包括接合工具11a和支撑件13。接合工具11a可包括按压表面111a和倾斜表面113a’。按压表面111a可以按压半导体芯片。按压表面111a可以具有圆形形状。按压表面111a的面积可以等于或大于半导体芯片的芯片顶表面的面积。倾斜表面113a’可以是弯曲表面。倾斜表面113a’的水平横截面积可以从按压表面111a朝向接合工具11a的顶表面逐渐变大。水平横截面区域可以是圆形。包括倾斜表面113a’的接合工具11a可以具有锥形形状。接合工具11a的形状可以大致是其底端部分被切掉的半球形状。圆角可以沿倾斜表面113a’生长。
通过总结和回顾,根据各实施例,可以在接合工具中形成倾斜表面,因此可以沿着倾斜表面引导接合剂的圆角的生长方向。因此,可以减小圆角在水平方向上的宽度,从而防止或基本上最小化圆角与接合工具之间的粘附。
因此,根据实施例,圆角可以例如沿着向上方向和向下方向竖直生长。根据实施例,可以减小接合剂在水平方向上的宽度或长度来制造小型封装件。根据实施例,可以防止接合剂的圆角粘附到接合工具上。根据实施例,可以容易地执行连续的接合处理。
本文已经公开了示例实施例,并且尽管采用了特定术语,但是它们仅以一般性和描述性意义来使用和解释,而不是出于限制的目的。在某些情况下,如本领域普通技术人员在提交本申请时明显的,结合特定实施例描述的特性、特征和/或元件可以单独使用,或者与结合其他实施例描述的特性、特征和/或元件组合使用,除非另外特别指出。因此,本领域技术人员将理解,在不脱离所附权利要求中阐述的本发明的精神和范围的情况下,可以在形式和细节上进行各种改变。
Claims (20)
1.一种用于接合半导体封装件的方法,所述方法包括:
将半导体芯片装载在衬底上;以及
通过使用接合工具将所述半导体芯片接合到所述衬底,所述接合工具包括用于按压所述半导体芯片的按压表面以及从所述按压表面的一侧延伸的倾斜表面,
其中,将所述半导体芯片接合到所述衬底包括:通过按压所述接合工具使设置在所述衬底和所述半导体芯片之间的接合剂变形,以及
其中,使所述接合剂变形包括:通过使所述接合剂的一部分突出超过所述半导体芯片而产生圆角,并以所述圆角的顶表面在所述倾斜表面的延伸方向上生长的方式生长所述圆角。
2.如权利要求1所述的方法,其中,设置有多个所述倾斜表面。
3.如权利要求1所述的方法,其中,将所述半导体芯片接合到所述衬底还包括:使变形的接合剂硬化。
4.如权利要求3所述的方法,还包括:在使变形的接合剂硬化之后,移除所述接合工具。
5.如权利要求3所述的方法,其中,使变形的接合剂硬化包括:通过所述接合工具加热变形的接合剂。
6.如权利要求1所述的方法,其中,所述按压表面的面积等于或大于所述半导体芯片的芯片顶表面的面积。
7.如权利要求1所述的方法,其中,所述接合剂包括非导电膜、非导电糊剂、各向异性导电膜和各向异性导电糊剂中的至少一种。
8.一种用于半导体封装件的接合头,所述接合头包括:
用于接合半导体封装件的接合工具,
其中所述接合工具包括:
按压表面,其用于按压半导体芯片;以及
倾斜表面,从所述按压表面延伸以引导圆角的生长方向。
9.如权利要求8所述的接合头,还包括:耦接到所述接合工具的支撑件。
10.如权利要求9所述的接合头,其中,所述接合工具和所述支撑件彼此可拆卸地耦接。
11.如权利要求10所述的接合头,其中,所述支撑件包括通孔。
12.如权利要求8所述的接合头,其中,设置有多个所述倾斜表面。
13.如权利要求8所述的接合头,其中,所述接合工具包括吸附孔。
14.如权利要求8所述的接合头,还包括:保护所述按压表面和所述倾斜表面的保护片。
15.一种半导体封装件,包括:
衬底;
半导体芯片;以及
接合剂,其位于所述衬底与所述半导体芯片之间,所述接合剂包括:
接合部分,其位于所述衬底与所述半导体芯片之间,以及
圆角,从所述接合部分突出超过所述半导体芯片,所述圆角的顶表面相对于所述半导体芯片的顶表面倾斜。
16.如权利要求15所述的半导体封装件,其中,设置有多个所述圆角的顶表面。
17.如权利要求15所述的半导体封装件,其中,所述衬底包括印刷电路板。
18.如权利要求15所述的半导体封装件,其中,所述衬底和所述半导体芯片通过导电材料彼此连接。
19.如权利要求15所述的半导体封装件,其中,所述接合剂包括非导电膜、非导电糊剂、各向异性导电膜和各向异性导电糊剂中的至少一种。
20.如权利要求15所述的半导体封装件,其中,所述圆角围绕所述半导体芯片。
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