CN110709967B - 改善在氧化硅上的超薄非晶硅膜的连续性的预处理方法 - Google Patents

改善在氧化硅上的超薄非晶硅膜的连续性的预处理方法 Download PDF

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CN110709967B
CN110709967B CN201880036516.8A CN201880036516A CN110709967B CN 110709967 B CN110709967 B CN 110709967B CN 201880036516 A CN201880036516 A CN 201880036516A CN 110709967 B CN110709967 B CN 110709967B
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amorphous silicon
silicon layer
layer
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CN110709967A (zh
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程睿
Y·杨
陈一宏
K·嘉纳基拉曼
A·B·玛里克
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Applied Materials Inc
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  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201880036516.8A 2017-07-24 2018-05-24 改善在氧化硅上的超薄非晶硅膜的连续性的预处理方法 Active CN110709967B (zh)

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KR102509390B1 (ko) 2023-03-14
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