KR102509390B1 - 산화규소 상의 초박형 비정질 규소 막의 연속성을 개선하기 위한 전처리 접근법 - Google Patents

산화규소 상의 초박형 비정질 규소 막의 연속성을 개선하기 위한 전처리 접근법 Download PDF

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KR102509390B1
KR102509390B1 KR1020207005305A KR20207005305A KR102509390B1 KR 102509390 B1 KR102509390 B1 KR 102509390B1 KR 1020207005305 A KR1020207005305 A KR 1020207005305A KR 20207005305 A KR20207005305 A KR 20207005305A KR 102509390 B1 KR102509390 B1 KR 102509390B1
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amorphous silicon
substrate
silicon layer
patterned features
layer
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KR20200023509A (ko
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루이 쳉
이 양
이홍 첸
카르틱 자나키라만
아브히짓 바수 말릭
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어플라이드 머티어리얼스, 인코포레이티드
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    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
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    • H10P14/3242—Structure
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
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    • H10P14/6326—Deposition processes
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
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    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
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    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
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  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020207005305A 2017-07-24 2018-05-24 산화규소 상의 초박형 비정질 규소 막의 연속성을 개선하기 위한 전처리 접근법 Active KR102509390B1 (ko)

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US201762536275P 2017-07-24 2017-07-24
US62/536,275 2017-07-24
PCT/US2018/034439 WO2019022826A1 (en) 2017-07-24 2018-05-24 PRETREATMENT APPARATUS FOR IMPROVING THE CONTINUITY OF ULTRA-THIN AMORPHOUS SILICON FILM ON SILICON OXIDE

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